2SB1390 Search Results

2SB1103

Abstract: 2SB1390 DSA003644
Contextual Info: 2SB1390 Silicon PNP Triple Diffused ADE-208-870 Z 1st. Edition Sep. 2000 Application Low frequency power amplifier Outline TO-220FM 2 1 12 3 1. Base 2. Collector 3. Emitter ID 4 kΩ (Typ) 200 Ω (Typ) 3 2SB1390 Absolute Maximum Ratings (Ta = 25°C) Item

2SB1390

Contextual Info: Inchange Semiconductor Product Specification 2SB1390 Silicon PNP Power Transistors DESCRIPTION •With TO-220Fa package ·High DC current gain ·Low saturation voltage ·DARLINGTON APPLICATIONS ·For use in low frequency power amplifier applications PINNING

Contextual Info: 2SB139040ML 2SB139040ML SCHOTTKY BARRIER DIODE CHIPS Ø 2SB139040ML is a schottky barrier diode chips Ø Low power losses, high efficiency; Ø Guard ring construction for transient protection; Ø High ESD capability; Ø High surge capability; Ø Packaged products are widely used in switching

2SB1390

Abstract: DSA003790 2SB1103
Contextual Info: 2SB1390 Silicon PNP Triple Diffused Application Low frequency power amplifier Outline TO-220FM 2 1 12 3 1. Base 2. Collector 3. Emitter ID 4 kΩ Typ 200 Ω (Typ) 3 2SB1390 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage

2SB1390

Contextual Info: SavantIC Semiconductor Product Specification 2SB1390 Silicon PNP Power Transistors DESCRIPTION •With TO-220Fa package ·High DC current gain ·Low saturation voltage ·DARLINGTON APPLICATIONS ·For use in low frequency power amplifier applications PINNING

Contextual Info: 2SB139060ML 2SB139060ML La 2SB139060ML Lb Ø Ø Ø Ø ESD Ø Ø Ø 1390µm X 1390µm; Ø 280±20µm La 1390µm Lb 1295µm 2SB139060MLYY @8.3ms VRRM 60 V IFAV 3 A IFSM 80 A TJ 125 °C TSTG -40~125 °C Tamb=25 VBR IR=0.5mA 60 - V VF IF=3A - 0.75 V IR VR=60V

Contextual Info: 2SB1390 Silicon PNP Triple Diffused HITACHI Application Low frequency power amplifier Outline T 0 -2 20 F M H 2 1 1. Base 2. C ollector 3. Emitter 12 3 Absolute Maximum Ratings |'o 4 kQ Typ 200 Q (Typ) ¿ 3 (T a = 2 5 °C ) Item Symbol Ratings Unit Collector to base voltage

2SB1390

Abstract: 2SB1103
Contextual Info: HITACHI 2SB1390-Silicon PNP Triple Diffused Low Frequency Power Amplifier Absolute Maximum Ratings Ta = 25°C Item S ym b o i Rating Unit Collector to base voltage VcBO -60 V Collector to emitter voltage VCEO -60 V Emitter to base voltage V EBO -7 V

Hitachi DSA002751

Contextual Info: 2SB1390 Silicon PNP Triple Diffused Application Low frequency power amplifier Outline TO-220FM 2 1 12 3 1. Base 2. Collector 3. Emitter ID 4 kΩ Typ 200 Ω (Typ) 3 Absolute Maximum Ratings (Ta = 25GC) Item Symbol Ratings Unit Collector to base voltage

Contextual Info: 2SB139040ML 2SB139040ML 肖特基二极管芯片 描述 Ø 2SB139040ML是采用硅外延工艺制造的肖特基 二极管芯片； Ø 损耗功率小，效率高； Ø 高ESD能力； Ø 高抗浪涌电流能力； Ø 具有瞬态反应保护能力的保护环结构；

Contextual Info: 2SB139060ML 2SB139060ML SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION Ø 2SB139060ML is a schottky barrier diode chips fabricated in silicon epitaxial planar technology; Ø Low power losses, high efficiency; Ø High ESD capability; Ø High surge capability; Ø

Contextual Info: HITACHI 2SB1390-Silicon PNP Triple Diffused Low Frequency Power Amplifier Absolute Maximum Ratings {Ta = 25°C Item Symbol Rating Unit Collector to base voltage VCQO -6 0 V Collector to emitter voltage V CEO -60 V Emitter to base voltage V EBO -7 V

Contextual Info: 2SB139060ML 2SB139060ML SCHOTTKY BARRIER DIODE CHIPS Ø 2SB139060ML is a schottky barrier diode chips Ø Low power losses, high efficiency; Ø Guard ring construction for transient protection; Ø High ESD capability; Ø High surge capability; Ø Packaged products are widely used in switching

Contextual Info: 2SB1390 Silicon PNP Triple Diffused HITACHI Application Low frequency power amplifier Outline T O -2 2 0 F M Absolute Maximum Ratings Ta = 25 °C Item Symbol Ratings Unit Collector to base voltage ^G B O -6 0 V Collector to em itter voltage VCEo -6 0 V Emitter to base voltage

Contextual Info: 2SB139060ML 2SB139060ML 肖特基二极管芯片 描述 Ø 2SB139060ML是采用硅外延工艺制造的肖特基二 极管芯片； Ø 损耗功率小，效率高； Ø 高ESD能力； Ø 高抗浪涌电流能力； Ø 具有瞬态反应保护能力的保护环结构；

Contextual Info: 2SB139040ML 2SB139040ML SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION Ø 2SB139040ML is a schottky barrier diode chips fabricated in silicon epitaxial planar technology; Ø Low power losses, high efficiency; Ø High ESD capability; Ø High surge capability; Ø

7054F

Abstract: BC564A HA13563 AC123A HITACHI microcontroller H8 534 manual IC 74LS47 AC538 BC245A 2SK3235 HA13557
Contextual Info: INDEX General General Information Semiconductor Packages Sales Locations Microcontroller Microcontroller General MultiChipModules Smart Card Micro. Overview Micro. Shortform Micro. Hardware Manual Micro. Program. Manual Micro. Application Notes LCD Controller / Driver

2SA1115

Abstract: 2sa1015 2SB1340 2SA1432 2SA1015L 2SB1342 2SB1370 A1592 2sa112 2SB753
Contextual Info: - m £ tt « Type No. Man uf. 2SB 1249 = 2 SB 1250 2 SB 1251 2SB 1252 fé T K T s fâ T fô T 2 SB 1253 2SB 1257 2SB 1258 - if'y'ry ÿ-yjy 2SB 1259, 2SB 1260 2SB 1261 = £ SANYO 2SA15 9 2 2SB1226 2SB1227 2SB1227 2SB1228 2SBÌ223 2SB1228 a 3C T0SHÍBA 2SA1225

1002ds

Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj
Contextual Info: 2004.1 Renesas Transistors/Thyristors/Triacs Status List Topic—High Frequency Silicon Bipolar Transistor "2SC5998" •············································································ 2

2SB1103

Abstract: 2SB1390
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

2SB1370

Abstract: 2SB1376 2sd2083 2sb1383 2SD2012 2SB1369 2SB1371 2SB1372 2SB1373 2SB1375
Contextual Info: - 88 - T a = 2 5 U *EP(âTc=25£C A, ft m S -A. v'cBO VcEO (V) (V) ÍCCDC) (A) n (W) m n ft T (max) ( jw A) (W) (min) uh t (max) (V? te Vce (V) (Ta=25cC ) Ic/I e (A) OEPiitypfil] • BE.\oak/ (max) (V) (V) Ic (A) 1b (A) 2SB1369 □— A G -60 -60 -3 40

transistor 2sk

Abstract: transistor sp-10 4ac14 2SK157 transistor 2sk 70 2sj318 transistor 2sk 12 2SK2851 4AC14 TRANSISTOR 2sK 135 K 2796
Contextual Info: POWER TRANSISTOR •General switching Darlington transistor Characteristics tire 7.5 1 k - 20 k 6.0 1 k - 20 k 6.0 1 k - 20 k 8.0 1 k - 20 k 9.0 150011.5 500l_ 16.0 1 k -2 0 k 5.0 1 k -2 0 k 4.0 1 k -2 0 k 3.1 1 k -2 0 k 4.0 1 k -2 0 k 3.0 15006.0 1 k - 20 k

lvc16244

Abstract: BC240 2sk3174 CBT1G125 LV2GT14A HC32 Hitachi HA13557A transistor 2SC1162 H8 hitachi programming manual 30204SP
Contextual Info: HITACHI ELECTRONIC COMPONENTS DATABOOK 2003 INDEX General Informations Multi Perpose Products Safety Considerations Hitachi Semiconductor Package Databook HITACHI Sales Locations Diodes Microcontroller Microcontroller General Microcontroller Overview List

2SC 8550

Abstract: 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545
Contextual Info: Status List HITACHI TRANSISTOR/GaAsIC Vol.16-4 2002.11 Topic - Hitachi High Frequency Bipolar Transistors . 2 Index . 3, 4