IR 9621 Search Results

MT1115

Abstract: 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117
Contextual Info: Fairchild Semiconductor T ransistor and Diode Data Catalog 1970 The Fairchild Semiconductor Transistor anc Diode Data Catalog is an all-inclusive volume of product information covering diodes anc transistors. Selection guides and data sheets fot each category of products assist you ir

9614PC

Abstract: 9614DM 9614DC Fairchild 9614 A 9614PC 9614C 9614 line driver LINE DRIVER 9614 9614 ts 9614
Contextual Info: 9614 DUAL DIFFERENTIAL LINE DRIVER F A IR C H IL D LINEAR-INTEGRATED CIRCUIT G ENERAL DESCRIPTION — The 9614 is a T T L com patible Dual D iffere n tial Line Driver. It is designed to drive transmission lines either d iffe re n tia lly or single-ended, back-matched or term inated.

DM9621

Abstract: 9621C ICL 9621 9621FM 9621PC Fairchild 9621 9621DC
Contextual Info: 9621 DUAL LINE DRIVER FAIRCHILD LIN EA R IN T E G R A T E D C IR C U I T G E N E R A L D E S C R IP T IO N — T he 9621 was designed to drive transm ission lines in e ith e r a d iffe re n tia l or a single-ended m ode. O u tp u t clam p diodes and back-m atch ing resistors fo r 1 3 0 ft tw is te d pair are

9614DC

Abstract: 9614DM 9614C 9614 line driver LINE DRIVER 9614 f 9614 lt 613 9614 9614 n 9614f
Contextual Info: 9614 DUAL DIFFERENTIAL LINE DRIVER F A IR C H I L D LIN EA R INTEGRATED CIRCU IT G E N E R A L D E S C R IP T IO N — The 9614 is a T T L compatible Dual Differential Line Driver. It is designed to drive transmission lines either differentially or single-ended, back-matched or terminated.

F9222

Abstract: IRF9220 f 9222 l ir 9621 f9223 IRF9222 F9222 L F9222 T IRFP9620 IRFP9220
Contextual Info: IRF9620/9621 /9622/9623 IRFP9220/9221 /9222/9223 IRF9220/92211922219223 P-CHANNEL POWER MOSFETS FEATURES • Low er R ds ON • • • • • • Improved inductive ruggedness Fast switching times Rugged polysiiicon gate cell structure Lower input capacitance

st 9622

Abstract: IRF9
Contextual Info: P-CHANNEL POWER MOSFETS IRF9620/9621 /9622/9623 FEATURES • • • • • • • Lower Ros ON Improved inductive ru gge d n e ss Fast sw itching tim es R u g ge d polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability

Contextual Info: SAMSUNG ELECTRONICS INC bME » • IRF9620/9621 /9622/9623 7 S b 4142 0D 12271 ‘H û «SMlSK P-CHANNEL POWER MOSFETS FEATURES • • • • • • • Lower Ros ON Improved inductive ru gge d n e ss Fast sw itching tim es R u g ge d polysilicon gate cell structure

igbt data

Abstract: JESD22-A114
Contextual Info: PD - 96217A PDP TRENCH IGBT IRG6S330UPbF Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications TM l Low VCE on) and Energy per Pulse (E PULSE for improved panel efficiency l High repetitive peak current capability

JESD22-A114

Contextual Info: PD -96218A PDP TRENCH IGBT IRG6S320UPbF Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications TM l Low VCE on) and Energy per Pulse (E PULSE for improved panel efficiency l High repetitive peak current capability

Contextual Info: PD -96218 PDP TRENCH IGBT IRG6S320UPbF Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications TM l Low VCE on) and Energy per Pulse (E PULSE for improved panel efficiency l High repetitive peak current capability

Contextual Info: PD - 96217 PDP TRENCH IGBT IRG6S330UPbF Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications TM l Low VCE on) and Energy per Pulse (E PULSE for improved panel efficiency l High repetitive peak current capability

Contextual Info: PD - 96219 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS IRG7PH42UD2PbF IRG7PH42UD2-EPbF Features • • • • • • • • Low VCE ON Trench IGBT Technology Low Switching Losses Square RBSOA

Contextual Info: PD - 96215 IRFB4321GPbF Applications l Motion Control Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l Hard Switched and High Frequency Circuits Benefits l Low RDSON Reduces Losses l Low Gate Charge Improves the Switching

irfb4321

Abstract: 4460 MOSFET AN-1005
Contextual Info: PD - 96215 IRFB4321GPbF Applications l Motion Control Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l Hard Switched and High Frequency Circuits Benefits l Low RDSON Reduces Losses l Low Gate Charge Improves the Switching

IRFB4110GPBF

Contextual Info: PD - 96214 IRFB4110GPbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness

IRFB4115G

Abstract: IRFB4115GPBF 96216 ir 104a
Contextual Info: PD - 96216 IRFB4115GPbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits D G S VDSS RDS on typ. max. ID (Silicon Limited)

Contextual Info: PD - 96216 IRFB4115GPbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits D G S VDSS RDS on typ. max. ID (Silicon Limited)

Contextual Info: PD - 96210 IRFB3206GPbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G D Benefits l Improved Gate, Avalanche and Dynamic dV/dt

IRFB3206GPBF

Abstract: IRFB3206
Contextual Info: PD - 96210 IRFB3206GPbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G D Benefits l Improved Gate, Avalanche and Dynamic dV/dt

Contextual Info: PD - 96211 IRFB3306GPbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G D Benefits l Improved Gate, Avalanche and Dynamic dV/dt

Contextual Info: PD - 96213 IRFB4410ZGPbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits D G S Benefits l Improved Gate, Avalanche and Dynamic dV/dt

Contextual Info: PD - 96214 IRFB4110GPbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness

IRFB4410ZGPBF

Abstract: irfb4410zg 96213 IRFB4410Z
Contextual Info: PD - 96213 IRFB4410ZGPbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits D G S Benefits l Improved Gate, Avalanche and Dynamic dV/dt

IRFB3307ZGPBF

Abstract: Mosfet 75V 120A circuit of smps
Contextual Info: PD - 96212 IRFB3307ZGPbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits HEXFET Power MOSFET D G Benefits l Improved Gate, Avalanche and Dynamic