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    Text: SAMSUNG ELECTRONICS INC bME » • IRF9620/9621 /9622/9623 7 S b 4142 0D 12271 ‘H û «SMlSK P-CHANNEL POWER MOSFETS FEATURES • • • • • • • Lower Ros ON Improved inductive ru gge d n e ss Fast sw itching tim es R u g ge d polysilicon gate cell structure


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    PDF IRF9620/9621 IRF9622 F9621 IRF9620 IRF9621 IRF9623 IRF9620/9621Ã Q01E57b