IR06 Search Results

diode 1044

Contextual Info: Preliminary Data Sheet I0119J 09/00 IR060LM12CS02CB FAST RECOVERY DIODE Junction Size: Square 60 x 60 mils Wafer Size: 4" VRRM Class: 1200 V Passivation Process: Glassivated MOAT Reference IR Packaged Part: Major Ratings and Characteristics Parameters Units

IRO618LC2Q

Contextual Info: 6 TO 18 GHz IMAGE REJECTION OR I/Q MIXERS MODELS: IR0618LC2A, IR0618LC2B, IR0618LC2C AND IR0618LC2Q FEATURES • RF/LO Coverage . 6 to 18 GHz • IF Operation . DC to 0.5 GHz • LO Power Range . +10 to +13 dBm • Conversion Loss . 9 dB Typical

Contextual Info: Inductive sensors IR06.P02F-F40.NO1Z.7SCV IR06.P02F-11119423 Inductive proximity switch dimension drawing 40 ø 6,5 LED general data photo mounting type flush special type factor 1 nominal sensing distance Sn 2 mm hysteresis 3 . 20 % of Sr output indicator

Contextual Info: Preliminary Data Sheet No. PD60171B IR062HD4C10U-P2 IR082HD4C10U-P2 HIGH VOLTAGE HALF BRIDGE Features • Output Power IGBT’s in half-bridge configuration • 600V rated breakdown voltage • High side gate drive designed for bootstrap operation • Matched propagation delay for both channels

IR060LM06CS02CB

Abstract: diode 1044 front metal rectifier square type box cf
Contextual Info: Bulletin I0129J rev. C 02/00 IR060LM06CS02CB FAST RECOVERY DIODE Junction Size: Square 60 x 60 mils Wafer Size: 4" V RRM Class: 600 V Passivation Process: Glassivated MOAT Reference IR Packaged Part: Major Ratings and Characteristics Parameters V FM Maximum Forward Voltage

Contextual Info: Inductive sensors IR06.P02F-F40.PC1Z.7SCV IR06.P02F-11119424 Inductive proximity switch dimension drawing 40 ø 6,5 LED general data photo mounting type flush special type factor 1 nominal sensing distance Sn 2 mm hysteresis 3 . 20 % of Sr output indicator

Contextual Info: Bulletin I0129J rev. C 02/00 IR060LM06CS02CB FAST RECOVERY DIODE Junction Size: Square 60 x 60 mils Wafer Size: 4" V RRM Class: 600 V Passivation Process: Glassivated MOAT Reference IR Packaged Part: Major Ratings and Characteristics Parameters V FM Maximum Forward Voltage

IR062HD4C10U-P2

Abstract: IR082HD4C10U-P2 IR2106 IR2108
Contextual Info: Preliminary Data Sheet No. PD60171 IR062HD4C10U-P2 IR082HD4C10U-P2 HIGH VOLTAGE HALF BRIDGE Features • Output Power IGBT’s in half-bridge configuration • 600V rated breakdown voltage • High side gate drive designed for bootstrap operation • Bootstrap diode integrated into package

IR060PM12CS02CB

Abstract: front metal rectifier square type
Contextual Info: Preliminary Data Sheet I0119J rev. A 11/00 IR060PM12CS02CB FAST RECOVERY DIODE Junction Size: Square 60 x 60 mils Wafer Size: 4" VRRM Class: 1200 V Passivation Process: Glassivated MOAT Reference IR Packaged Part: Major Ratings and Characteristics Parameters

ir06

Abstract: IR062HD4C10U-P2 IR082HD4C10U-P2 IR2106 IR2108 igbt1
Contextual Info: Preliminary Data Sheet No. PD60171-C IR062HD4C10U-P2 IR082HD4C10U-P2 HIGH VOLTAGE HALF BRIDGE Features • Output Power IGBT’s in half-bridge configuration • 600V rated breakdown voltage • High side gate drive designed for bootstrap operation • Matched propagation delay for both channels

IR062HD4C10U-P2

Abstract: IR082HD4C10U-P2 IR2106 IR2108 power IGBT
Contextual Info: Preliminary Data Sheet No. PD60171-D IR062HD4C10U-P2 IR082HD4C10U-P2 HIGH VOLTAGE HALF BRIDGE Features • Output Power IGBT’s in half-bridge configuration • 575V rated breakdown voltage • High side gate drive designed for bootstrap operation • Matched propagation delay for both channels

IR0618LC2Q

Abstract: IRO618LC2Q
Contextual Info: 6 TO 18 GHz IMAGE REJECTION OR I/Q MIXERS MODELS: IR0618LC2A, IR0618LC2B, IR0618LC2C AND IR0618LC2Q FEATURES • RF/LO Coverage . 6 to 18 GHz • IF Operation . DC to 0.5 GHz • LO Power Range . +10 to +13 dBm • Conversion Loss . 9 dB Typical

IR062H4C10U-P2

Abstract: half bridge driver
Contextual Info: Preliminary Data Sheet No. PD60171A IR062HD4C10U-P2 IR082HD4C10U-P2 HIGH VOLTAGE HALF BRIDGE Features • Output Power IGBT’s in half-bridge configuration • 600V rated breakdown voltage • High side gate drive designed for bootstrap operation • Matched propagation delay for both channels

R5F5631

Abstract: R5F563NBDDFP A083H RX631 100-6 p86 A161H ir127 capacitor PMR 202 DM IPR200 c04f
Contextual Info: Features RX63N Group, RX631 Group Renesas MCUs R01DS0098EJ0100 Rev.1.00 Jun 13, 2012 100-MHz 32-bit RX MCU, on-chip FPU, 165 DMIPS, up to 2-MB flash memory, Ethernet MAC, full-speed USB 2.0 host/function/OTG interface, various communications interfaces including CAN, 10- & 12-bit A/D

Contextual Info: User’s Manual 32 Cover RX630 Group User’s Manual: Hardware RENESAS 32-Bit MCU RX Family / RX600 Series All information contained in these materials, including products and product specifications, represents information on the product at the time of publication and is subject to change by

IROH-01-458

Contextual Info: C IMAGE REJECT MIXERS Power dBm) nom. Conversion Loss (dB) max. 1 dB Comp. Pt. (dBm) min. (2) Image Rejection (dBc) min. P/N LO± IF LO + IF LO± IF LO ± IF LO ± IF +10 +10 +10 +10 +10 9.0 9.0 9.0 10.0 10.0 +3 +3 +3 +3 +3 25 25 25 20 20 IR-01-* IR-02-*

Contextual Info: Features RX63N Group, RX631 Group Renesas MCUs R01DS0098EJ0100 Rev.1.00 Jun 13, 2012 100-MHz 32-bit RX MCU, on-chip FPU, 165 DMIPS, up to 2-MB flash memory, Ethernet MAC, full-speed USB 2.0 host/function/OTG interface, various communications interfaces including CAN, 10- & 12-bit A/D

Contextual Info: Datasheet RX62T Group Renesas MCUs R01DS0096EJ0100 Rev.1.00 Apr 20, 2011 100-MHz 32-bit RX MCUs, FPU, 165 DMIPS, 12-bit ADC 3 S/H circuits, double data register, amplifier, comparator : two units, 10-bit ADC one unit, the three ADC units are capable of simultaneous 7-ch. sampling, 100-MHz PWM (two three-phase complementary

Contextual Info: Preliminary Data Sheet Specifications in this document are tentative and subject to change. RX210 Group Renesas MCUs 50-MHz 32-bit RX MCUs, 78 DMIPS, up to 512-KB flash memory, 12-bit AD, 10-bit DA, ELC, MPC, RTC, up to 9 comms interfaces; incorporating functions for IEC60730 compliance

NTC SD-9

Abstract: R1561 NTC SD-15 PLS4148 S72I MUAB
Contextual Info: 199SlSh< — SSVnSSSWS — — T T- 3 3 9 333 3333333333 3 3 333333333 la o rfN P K A V M ia 5 Q Ö Ö O O Ö Ö f l Hr'p,^'‘rtrt^ HrtNfHiN«NNN«NNrtnrtf»nnnonrt'»*-i’f>»i»*f •»¥í'iflíi«fiirtioiíiinifiift'í'í'íií K i n i i h a f t O '-

R01US0032EJ

Contextual Info: User’s Manual 32 Cover RX63T Group User’s Manual: Hardware RENESAS 32-Bit MCU RX Family / RX600 Series All information contained in these materials, including products and product specifications, represents information on the product at the time of publication and is subject to change by

R5F56218BNFP

Abstract: R5F562N8BNFP R5F56218 R5F56216 r5f562 RX621 ir234 IR247 sdc 7500 ir153
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

ir06

Contextual Info: Infrared Emitting Diode End Look 2 Chip Part Number Material Wave lengt h p BIR-BM18V4V-2 GaAlAs/GaAs 940 BIR-BO18V4V-2 GaAlAs/GaAlAs 850 BIR-BO08V4V-2 GaAlAs/GaAlAs 850 BIR-BN08V4V-2 GaAlAs/GaAlAs BIR-BM18E4G-2 Lens Color V F V @ I F =50m A Ee(mW/cm )

LTC4100 sample code

Abstract: diode ir01 va06 VA08 TIP 41A
Contextual Info: LTC1760 Dual Smart Battery System Manager DESCRIPTIO U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SMBus Charger/Selector for Two Smart Batteries* Voltage and Current Accuracy within 0.2% of Value Reported by Battery Simplifies Construction of “Smart Battery System