IR2112 GATE DRIVER Search Results

Contextual Info: INTERNATIONAL RECTIFIER bSE D • M Ö S S 4S 2 0 D 1 Ö 21 4 b41 ■ INR Provisional Data Sheet P D -6.0 26 INTERNATIONAL RECTIFIER I « R POWER MOSFET/IGBT GATE DRIVER IR2112 General Description Features The IR2112 is a high voltage, high speed power MOSFET and IGBT driver with independent high

Contextual Info: International S Rectifier Data Sheet No. PD-6.026A IR2112 HIGH AND LOW SIDE DRIVER Features • Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune ■ Gate drive supply range from 10 to 20V

IR2112 application note

Abstract: IR2112 IR2112 equivalent IR2112S IRFBC20 IRFBC30 IRFBC40 IRFPE50 APPLICATION IR2112
Contextual Info: Data Sheet No. PD60026-R IR2112 S & (PbF) HIGH AND LOW SIDE DRIVER Features • Floating channel designed for bootstrap operation • Fully operational to +600V • Tolerant to negative transient voltage dV/dt immune • Gate drive supply range from 10 to 20V

IR2112 application note

Abstract: IR2112 equivalent IR2112 PD60026 PD60026-O IR2112S transistor irfbc40 IRFBC20 IRFBC30 IRFBC40
Contextual Info: Data Sheet No. PD60026-O IR2112 S HIGH AND LOW SIDE DRIVER Features Product Summary • Floating channel designed for bootstrap • Fully operational to +600V • Tolerant to negative transient voltage operation dV/dt immune • Gate drive supply range from 10 to 20V

IR2112

Abstract: IR2112-1 IR2112-2 IR2112S IRFBC20 IRFBC30 IRFBC40 IRFPE50
Contextual Info: Data Sheet No. PD60026J IR2112 HIGH AND LOW SIDE DRIVER Features Product Summary • Floating channel designed for bootstrap operation • • • • • • • Fully operational to +600V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 to 20V

IR2112 application note

Abstract: IR2112 equivalent IR2112 DRIVER igbt WITH INPUT FOR SHUTDOW IR2112S IRFBC20 IRFBC30 IRFBC40 IRFPE50 PD60026
Contextual Info: Data Sheet No. PD60026 Rev.R IR2112 S & (PbF) HIGH AND LOW SIDE DRIVER Features • Floating channel designed for bootstrap operation • Fully operational to +600V • Tolerant to negative transient voltage dV/dt immune • Gate drive supply range from 10 to 20V

IR2112

Contextual Info: Data Sheet No. PD60026I IR2112 HIGH AND LOW SIDE DRIVER Features Product Summary • Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune · Gate drive supply range from 10 to 20V · Undervoltage lockout for both channels

IR2112 application note

Abstract: IR2112 IR2112 equivalent PD60026 IR2112 circuit IR2112-2 APPLICATION IR2112 IR2112S ir2112 gate driver IR2112-1
Contextual Info: Data Sheet No. PD60026 revS IR2112 -1-2 (S)PbF HIGH AND LOW SIDE DRIVER Features • Floating channel designed for bootstrap operation • Fully operational to +600V • Tolerant to negative transient voltage dV/dt immune • Gate drive supply range from 10 to 20V

PD60026-L

Abstract: IRFBC30 IR2112 IR2112S IRFBC20 IRFBC40 IRFPE50
Contextual Info: Data Sheet No. PD60026-L IR2112 HIGH AND LOW SIDE DRIVER Features • Floating channel designed for bootstrap operation • Fully operational to +600V • Tolerant to negative transient voltage • • • • • • • • dV/dt immune Gate drive supply range from 10 to 20V

IR2112 equivalent

Abstract: IR2112 IR2112-2 IR2112-1 IR2112S IRFBC20 IRFBC30 IRFBC40 MP150 transistor irfbc40
Contextual Info: Data Sheet No. PD-6.026-G IR2112 HIGH AND LOW SIDE DRIVER Features Product Summary • Floating channel designed for bootstrap operation • • • • • • • Fully operational to +600V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 to 20V

Contextual Info: Data Sheet No. PD-6.026C International I R Rectifier IR2112 HIGH AND LOW SIDE DRIVER Features Product Summary • Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune ■ Gate drive supply range from 10 to 20V

sirio

Abstract: IR2112 ar2112 IR2112S IR2112 J IR2112-1 IR2112-2 IR2112 circuit 600v plating phase rectifier diagram
Contextual Info: International [S I Rectifier Data Sheet No. PD-6.026C IR2112 HIGH AND LOW SIDE DRIVER Features Product Summary • Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune ■ Gate drive supply range from 10 to 20V

IR2112

Abstract: 5TO20V
Contextual Info: International 1@I]Rectifier Data Sheet No. PD-6.026C IR2112 HIGH AND LOW SIDE DRIVER Features Product Summary • Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune ■ Gate drive supply range from 10 to 20V

IR2112

Abstract: IR2112 equivalent IR2112-1 IR2112-2 IR2112S IRFBC20 IRFBC30 IRFBC40 IRFPE50
Contextual Info: Data Sheet No. PD60026J IR2112 HIGH AND LOW SIDE DRIVER Features Product Summary • Floating channel designed for bootstrap operation • • • • • • • Fully operational to +600V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 to 20V

Contextual Info: Data Sheet No. PD60026-P IR2112 S HIGH AND LOW SIDE DRIVER Features • Floating channel designed for bootstrap operation • Fully operational to +600V • Tolerant to negative transient voltage dV/dt immune • Gate drive supply range from 10 to 20V • Undervoltage lockout for both channels

IR2112 application note

Abstract: IR2112 IR2112S IRFBC20 IRFBC30 IRFBC40 IRFPE50
Contextual Info: Data Sheet No. PD60026-P IR2112 S HIGH AND LOW SIDE DRIVER Features • Floating channel designed for bootstrap operation • Fully operational to +600V • Tolerant to negative transient voltage dV/dt immune • Gate drive supply range from 10 to 20V • Undervoltage lockout for both channels

IR2112 equivalent

Abstract: IR2112-2 IR2112 IR2112 circuit IR2112S IR2112-1 MP150 high current igbt IGBT Designers Manual
Contextual Info: Data Sheet No. PD-6.026C IR2112 HIGH AND LOW SIDE DRIVER Features Product Summary n Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune n Gate drive supply range from 10 to 20V n Undervoltage lockout for both channels

IR2112 application note

Abstract: IR2112 equivalent igbt driver IR2112 IR2112S IRFBC20 IRFBC30 IRFBC40 IRFPE50
Contextual Info: Data Sheet No. PD60026-N IR2112 S HIGH AND LOW SIDE DRIVER Features • Floating channel designed for bootstrap operation • Fully operational to +600V • Tolerant to negative transient voltage dV/dt immune • Gate drive supply range from 10 to 20V • Undervoltage lockout for both channels

IR2112 equivalent

Abstract: IR2112 IR2112-1 IR2112-2 IR2112S MP150 IGBT Designers Manual IR2112 circuit B52 transistor
Contextual Info: Previous Datasheet Index Next Data Sheet Data Sheet No. PD-6.026C IR2112 HIGH AND LOW SIDE DRIVER Features Product Summary n Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune n Gate drive supply range from 10 to 20V

IR2112 equivalent

Abstract: IR2112 application note ir2112 transistor irfbc40 IR2112-1 IR2112-2 IR2112S IRFBC20 IRFBC30 IRFBC40
Contextual Info: Data Sheet No. PD60026-K IR2112 HIGH AND LOW SIDE DRIVER Features • Floating channel designed for bootstrap operation • Fully operational to +600V • Tolerant to negative transient voltage • • • • • • • • dV/dt immune Gate drive supply range from 10 to 20V

Contextual Info: Data Sheet No. PD60026J IR2112 HIGH AND LOW SIDE DRIVER Features Product Summary • Floating channel designed for bootstrap operation • Fully operational to +600V • Tolerant to negative transient voltage • • • • • • • • dV/dt immune Gate drive supply range from 10 to 20V

high frequency plating rectifier using IGBT

Contextual Info: Data Sheet No. PD -6.026C International IGR Rectifier IR2112 HIGH AND LOW SIDE DRIVER Features Product Summary • Floating channel designed for bootstrap operation Fully operational to +600V V o ffs e t 600V max. Tolerant to negative transient voltage dV/dt immune

IRF470

Abstract: IR2110 equivalent power MOSFET IRF740 driver circuit IR2110 gate driver for mosfet irf740 equivalent driver circuit for MOSFET IR2110 IR2112 equivalent gate drive circuit for power MOSFET IRF740 irf740 mosfet IRF740LC
Contextual Info: Index Design Tips DT 94-7A Low Gate Charge HEXFETs Simplify Gate Drive and Lower Cost Introduction Fast switching of power MOSFETs requires rapid transfer of the gate charge in a short period of time. High peak output current capability Control ICs can deliver high current spikes for fast switching, but the

IRF470

Abstract: LRF740 IR2110 equivalent IR2110 gate driver for mosfet h bridge irf740 IRF470 mosfet 1rf740 IR2112 equivalent power MOSFET IRF740 driver circuit gate drive circuit for power MOSFET IRF740
Contextual Info: International d iiRectifier D e sig n T ip s IN TE R N A TIO N A L R E C TIFIER • A P P LIC A T IO N S ENG. - 23 3 K AN S A S ST • E LS E G U N D O , CA. 9 0 2 4 5 - TE L 310 322-3331 • F A X (310)322-3332 LOW GATE CHARGE HEXFETS SIMPLIFY GATE DRIVE AND LOWER COST