IRF 250N Search Results

IRF 501

Abstract: IRF500N IRF500NC irf 260 IRF 530 125mm2 200NC W103 irf 150 irf free
Contextual Info: POWER 06.2002 PCN RESISTORS MAX. 500W TOL. 0.5% TC. 260ppm/ ЊC IRF FLAT TYPE METAL CLAD WIRE-WOUND RESISTORS Winding Method : Non Inductive Winding Type Wattage Rating Chassis Mounted W Resistance Range (V) IRF 100 NC 100 1ϳ560 Resistance Tolerance (%)

ksd 302 250v, 10a

Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle

irf 249 A

Contextual Info: IRFW/I720A Advanced Power MOSFET FEATURES B^DSS 400 V - ♦ Avalanche Rugged Technology 1 .8 Q CO a II ♦ Lower Input Capacitance CO ^ D S o n = ♦ Rugged Gate Oxide Technology A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D2-PAK ♦ Lower Leakage Current: 10|iA (Max.) @ V DS = 400V

IRF 344

Abstract: IRF n 30v
Contextual Info: IRFW/I710A A d van ced Power MOSFET FEATURES B ^D S S - 400 V ♦ Avalanche Rugged Technology ^ D S o n = ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = ♦ Improved Gate Charge ♦ Extended Safe Operating Area 2 A D2-PAK ♦ Lower Leakage Current: 10|iA (Max.) @ V DS = 400V

IRF MOSFET 100A 200v

Abstract: MOSFET 150 N IRF
Contextual Info: IRFW/I740A A d van ced Power MOSFET FEATURES BV DSS = 400 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ^ D S o n - 0 -5 5 Q ♦ Lower Input Capacitance In = 10 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D 2-P A K ♦ Lower Leakage Current: 10|iA (Max.) @ V DS = 400V

D78C10

Abstract: PD78C10 PD78C11 PD78C10CW 78C10 irf 4110 13412 capacitor MKL PD78C14G-36 PD78C11G-36
Contextual Info: N E C ELECTRONICS INC Tfi D Ë J fc>457S2S 0D133ñfl ¿/PD78C10/C11/C14 8-BIT, SIN G LE-CH IP CMOS M ICROCOM PUTERS WITH A /D CO N VER TER NEC NEC Electronics Inc. -— 6427525 N E C S ELECTRO N ICS Description The/7PD78C10, A/PD78C11, and/nPD78C14 single-chip

pd7810

Abstract: PD7811 PD7810G-36 PD7811G-36 PD7811G 7810 NEC R2M 45 F147 nec uPD7811 irf 480
Contextual Info: 4 ^ /X Y "* //PD7810/11 8-BIT, S IN G L E -C H IP n m o s m ic r o c o m p u te r s W ITH A / D C O N V E R T E R NEC Electronics Inc. Description Pin Configuration T h e ¿/PD7810 and ¿/PD7811 sin gle-chip m icro ­ com puters integrate sophisticated on-chip peripheral

IRF530

Abstract: IRF532.533
Contextual Info: MICRO ELE CT RONICS-CO RP 1TE » bQTlTôfl QQQ07Ö1 1 »REUMINARY B l° |- ü IRF530 IRF531 IRF532 IRF533 I HIGH POWER MOSFETs PartNunfaw IRFS3Q IRF531 IRF532 IRFS33 APPLICATIONS l AI• .SWITCHING REGULATORS • I I I I • CONVERTERS VDS ^OS on 100V man

se 140

Abstract: SE140 F3J48 SF3G48 SF3J48 USF3G48 USF3J48
Contextual Info: TOSHIBA SF3G48,SF3J48,USF3G48,USF3J48 TOSHIBA THYRISTOR SILICON PLANAR TYPE SF3G48, SF3J48, USF3G48, USF3J48 MEDIUM POWER CONTROL APPLICATIONS. Repetitive Peak Off-State Voltage Repetitive Peak Reverse Voltage Average On-State Current Gate Trigger Current

1rf830

Abstract: LG diode 831 IRF830.831 IRFS32 IRFS30
Contextual Info: MICRO ELECTRONICS CORP ITE D • I bGTlîflû OOOOTTO 2 £77 'm i Æ XÿSlf}- ¡ Il T -2 V U 1RF830 1RF831 IRF832 IRF833 \j; ggg p « * ik i m V ÎI HIGH POWER MOSFETs P*itNuirb«r VDS APPLICATIONS I ’ PR E L IM IN A R Y • SWITCHING REGULATORS • MOTOR DRIVERS

Contextual Info: SSH17N60A A d van ced Power MOSFET FEATURES BVdss = 600 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |iA Max. @ VDS = 600V

IRF 544 N MOSFET

Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511
Contextual Info: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no

NEC 7808

Abstract: 7809 A PI 505 7808 A PD7808 7809 pi uPD7809 PD7811 7808 nec
Contextual Info: SEC NEC Electronics Inc. yuP D 7807/08/09 HIGH-END, 8-B IT, SINGLE-CHIP NMOS MICROCOMPUTERS WITH COMPARATOR AND 8K ROM PRELIMINARY INFORMATION D escription Pin Configuration The yuPD7807//uPD7808///PD7809 single chip m icro­ com puter augm ents the high-end NEC fam ily of 8 -b it

MOSFET IRF 713

Contextual Info: • M302271 0054043 T53 ■ HAS IR F710/711/712/713 IRF71 OR/711R/712R/713R 33 HARRIS N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Features Package T 0 -22 0A B TOP VIEW • 1.7A and 2.0A, 350V - 400V • i"DS °n = 3.6fl and 5.0fl DRAIN (FLANGE)

smd diode sm i7

Abstract: m33 tf 130 AF1EA
Contextual Info: Ip j .0 p p Q t i o n a l Provisional Data Sheet No. PD-9.1548 IOR Rectifier HEXFET POWER MOSFET IRFN240 N -C H A N N E L 200 Volt, 0.180 HEXFET HEXFET technology is the key to International Rectifier's advanced line of power MOSFET transistors. The effi­

irf332

Abstract: IRF331 IRF3302
Contextual Info: H E D I 4ÖS5M52 G0Cm3t. Q | Data Sheet No. PD-9.302H INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER I« R T-39-11 REPETITIVE AVALANCHE AND dv/dt RATED* HEXFET TRANSISTORS IRF330 IRF331 IRF332 IRF333 Product Summary 400 Volt, 1.0 Ohm HEXFET TO-204AlA TO-3 Hermetic Package

IC8048

Abstract: cwt 235 atx D78C1 78C17 HS1ND JRC 8048B UPD78C17CW 78C18 citi coil UPD7801
Contextual Info: M O S *W 5]S& M O S Integrated Circuit / ¿ P D 7 8 C 1 7 , 7 8 C 18 8 t y h " > > ? \ s ? - 'V 7 ° ' — 9 (A/D n > '< — f i t à ) //PD78C18Ü, 16 h* >y h ALU, ROM, RAM, A / D n > /< - ^ , >f r? /> f -<> h • fj ^ > ÿ , ïüffl U $ & { 3 ^ { z 3 1 K ^ M t ' i t i o / ï ' J (ROM/RAM) £

RA5E

Abstract: SRFE 1126 IRF 024 RY 227 Tf 227 10A 016T NEC CPUii k7d7 upd78cp14 ZPD* ITT mkad
Contextual Info: M O S Integrated C irc u it PD78C14A pPD 7 8C 14 A iil6b y h A L U , ROM, RAM, A /D n 's*<—9, 7/u • -i § !> CMOS 8 t' v 1- •-v-f 1“ * ', %M.tt9 4 -v/'f ' O o n > h° ^ X7 f- • t ^ > 9 , tilfflx 'J h &X'<T>9 i ij RO M /R A M ) £t£3ftT" 1 ^ T 't o ^ P D 7 8 C 1 4 A i± C M O S i» j t ^ ^ * f im # 'l*

ZTE MF 180 circuit

Abstract: JVC 0J HCJ crystal PD-50p ntl9 kyx 28 lt024 sumi jo 87AD uPD78C18
Contextual Info: A Ü *> oo ^ co Cd al I M I °» Cd M t—* Kl o< oj O 3 oo > S [NJ O r>i $* C/3 4 üSl4 V njg <5 V' V 'S ►d ö •O OO O i—i oo > a 4* X > Ö s U V » X1 1 Oi 4^- « A s wT- 00 -X» 4 ^ >*' ^ rj Pt m s V >i 4 V -A V' x >i A sil ^ K' \r ■fc r V 00 t

Contextual Info: H A R R IS sem iconductor IR F R 4 2 0 , IR F R 42 1 , IR F R 4 2 2 , ¡R F U 4 2 0 , IR F U 4 2 1 , IR F U 4 2 2 2.2k and 2.5A, 450V and 500V, 3.0 and 4.0 Ohm, N-Channel Power MOSFETs juiy 1998 Features Description • 2.2A and 2.5A, 450V and 500V • High Input Impedance

IRF 250

Abstract: MAX365CPE
Contextual Info: 19-0181; Rev 0; 9/93 Precision, Quad, SPST Analog S w itches The MAX364/MAX365 are fabricated with Maxim's new improved 44V silicon-gate process. Design improve­ m ents g u a ra n te e e xtre m e ly low c h a rg e in je c tio n 10pC , low power consumption (35nW), and electro­

irf 4903

Abstract: irf 250n 114-5042
Contextual Info: A M Application Specification R m m m 114-5042 28 JAN 00 m Rev. E2 Crim ping of “250” Series, Positive Lock Receptacle Contact 25 0 v h X -Jl v f l f ' U y ì - m 0 Contents First 7 pages following this top sheet English version Next 7 pages Japanese version

diode U1J

Abstract: NE83Q92 NE83Q92A NE83Q92D NE83Q92N NE83Q93
Contextual Info: Philips Semiconductors Data Communications Products " • bbS3=124 o c m b f l l 31fl ■ SIC3 Preliminary specification “ ■— ■■■ m m m m m m w— mmm Low-power coaxial Ethernet transceiver NE83Q92 DESCRIPTION FEATURES The NE83Q92 is a low power coaxial

NE83Q93

Abstract: NE83Q94DK QQR471 QQT4712 ethernet transformer 10base-2 "Ethernet Transceiver"
Contextual Info: • bbsg^M o c m 7 ii iss « s i c s Philips Semiconductors Data Communications Products Preliminary specification Miniature coaxial Ethernet transceiver DESCRIPTION NE83Q94 PIN CONFIGURATION The NE83Q94 is a low power coaxial transceiver interface CTI for