IRF71 Search Results

910410

Contextual Info: IRF710, SiHF710 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 400 RDS(on) () VGS = 10 V Qg (Max.) (nC) 17 • Fast Switching Qgs (nC) 3.4 • Ease of Paralleling Qgd (nC) 8.5 Configuration Available • Repetitive Avalanche Rated

IRF7103

Abstract: MS-012AA 9109
Contextual Info: PD - 9.1095B IRF7103 HEXFET Power MOSFET l l l l l l l Adavanced Process Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching S1 G1 S2 G2 1 8 2 7 3 6 4 5 D1 VDSS = 50V D1 RDS on = 0.130Ω

IRf 48 MOSFET

Abstract: transistor irf 649 irf7105pbf f710 IRF7101 MS-012AA
Contextual Info: PD - 95164 IRF7105PbF Advanced Process Technology l Ultra Low On-Resistance l Dual N and P Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching l Lead-Free Description HEXFET Power MOSFET l S1 N-CHANNEL MOSFET

irf710

Contextual Info: International S Rectifier HEXFET Power MOSFET MS5S45E 0 0 1 4 7 5 2 3T0 INR PD-9.327J IRF710 INTERNATIONAL RECTIFIER Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements D ?5E VDSS= 400V ^DS on = 3 -6 Q

IRF712

Abstract: IRF713 TC-26 260FA
Contextual Info: IRF712,713 r a n r 1.3 AMPERES 400, 350 VOLTS RDS ON = 5 n HELD EFFECT POWER TRANSISTOR This series of N -C h annel Enhancem ent-m ode Power MOSFETs utilizes G E’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­

irf710 "spice model"

Abstract: IRF710 IRF713 AN-975 1RF713 Diode Gfg 45 IRF712
Contextual Info: HE 0 I T- 3 T-// 4055455 0000520 7 | INTERNATIONAL Data Sheet No. PD-9.327I R EC TIFIER INTERNATIONAL RECTIFIER IÖR REPETITIVE AVALANCHE AND dv/dt RATED* IRF710 HEXFET TRANSISTO RS i R F T n n & Zìi N-CHANNEL IRF712 IRF713 Product Summary 400 Volt, 3.6 Ohm HEXFET

irf710 datasheet

Abstract: IRF710 IRF710 and its equivalent TB334
Contextual Info: IRF710 Data Sheet January 2002 2.0A, 400V, 3.600 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of

IRF7106

Abstract: AN-994 N-P Channel mosfet
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1098B IRF7106 PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching S1 G1

irf710 datasheet

Abstract: IRF710
Contextual Info: IRF710, SiHF710 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 400 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 3.6 Qg (Max.) (nC) 17 • Fast Switching Qgs (nC) 3.4 • Ease of Paralleling Qgd (nC) 8.5 Configuration

EIA-541

Abstract: IRF7101
Contextual Info: PD -95037A IRF7103PbF l l l l l l l l Adavanced Process Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Lead-Free HEXFET Power MOSFET S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5

IRF7102

Abstract: IOR 336 AN-994
Contextual Info: International '«»Rectifier PD 9.872A IRF7102 HEXFET Power MOSFET • • • • • • • Advanced Process Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching V DSS= 5 0 V

Contextual Info: PD - 95254 IRF7104PbF HEXFET Power MOSFET l l l l l l l l Adavanced Process Technology Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Lead-Free S1 G1 S2 G2 1 8 D1 2 7 D1 3 6 4 5 D2

NS4290

Abstract: F7101 IRF7101
Contextual Info: IRF7104PbF Electrical Characteristics @ TJ = 25°C unless otherwise specified ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Qg Q gs Qgd td(on) tr td(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage

Contextual Info: PD - 93944 IRF7103Q AUTOMOTIVE MOSFET Typical Applications ● ● ● HEXFET Power MOSFET Anti-lock Braking Systems ABS Electronic Fuel Injection Power Doors, Windows & Seats VDSS Benefits ● ● ● ● ● ● ● Ω) RDS(on) max (mΩ) ID 130@VGS = 10V

Contextual Info: IRF710S, SiHF710S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 400 RDS(on) () VGS = 10 V 3.6 Qg (Max.) (nC) 17 Qgs (nC) 3.4 Qgd (nC) 8.5 Configuration Single D D2PAK (TO-263) • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount

Contextual Info: PD - 96101 IRF7103QPbF AUTOMOTIVE MOSFET Typical Applications l l l HEXFET Power MOSFET Anti-lock Braking Systems ABS Electronic Fuel Injection Power Doors, Windows & Seats VDSS Benefits l l l l l l l Advanced Process Technology Dual N-Channel MOSFET Ultra Low On-Resistance

IE transformer

Contextual Info: PD- 95746 IRF710SPbF • Lead-Free www.irf.com 1 8/23/04 IRF710SPbF 2 www.irf.com IRF710SPbF www.irf.com 3 IRF710SPbF 4 www.irf.com IRF710SPbF www.irf.com 5 IRF710SPbF 6 www.irf.com IRF710SPbF Peak Diode Recovery dv/dt Test Circuit Circuit Layout Considerations

Contextual Info: PD - 96101A IRF7103QPbF AUTOMOTIVE MOSFET Typical Applications VDSS l Anti-lock Braking Systems ABS l Electronic Fuel Injection l Power Doors, Windows & Seats HEXFET Power MOSFET RDS(on) max (mW) ID 130@VGS = 10V 3.0A 200@VGS = 4.5V 1.5A 50V Benefits l

AN-994

Abstract: IRF7106 HEXFET Power MOSFET designer manual
Contextual Info: International PD - 9.1098B ^R ectifier IRF7106 PRELIMINARY HEXFET Power MOSFET • • • • • • • Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel Mosfet Surface Mount Available In Tape & Reel Dynamic dv/dt Rating Fast Switching

IRF7104

Contextual Info: PD - 9.1096B International Iö R Rectifier IRF7104 HEXFET Power M OSFET • Advanced Process Technology • Ultra Low On-Resistance • Dual P-Channel MOSFET • Surface Mount • Available in Tape & Reel • Dynamic dv/dt Rating • Fast Switching Vqss = -20V

EIA-541

Abstract: IRF7101 MS-012AA
Contextual Info: PD - 95162 IRF7101PbF Adavanced Process Technology l Ultra Low On-Resistance l Dual N-Channel MOSFET l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching l Lead-Free Description HEXFET Power MOSFET l S1 1 8 D1 G1 2 7 D1 S2 3

F7101

Abstract: IRF7101
Contextual Info: PD - 96102A IRF7105QPbF HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Lead-Free S1 N-CHANNEL MOSFET 1 8 G1 2 7 D1 S2 3

irf7309

Abstract: IRF7507TR IRF7342 IRF7210 DO-30 IRLML2803TR IRF964
Contextual Info: International Rectifier MOSFETs and Rectifiers MOSFETs Continued HEXFETª Power MOSFETs Ñ D2PAK (cont.) N-Channel (continued) Mfr.Õs Type IRF3710S IRF1310NS IRF540NS IRF530NS IRF3415S IRF3515S IRF3315S IRFS31N20D IRF640NS IRF630NS IRF644S IRF740S IRF710S

Contextual Info: IRF7102 Transistors Matched Pair of N-Channel Enhancement MOSFETs V BR DSS (V)50 V(BR)GSS (V) I(D) Max. (A)2.0# I(DM) Max. (A) Pulsed I(D)1.3 @Temp (øC)100 IDM Max (@25øC Amb)8.0# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)2.0# Minimum Operating Temp (øC)-55õ