IRF 354 Search Results

IRFP 740

Abstract: IRF 810 IRF 426 irf transistors irfp 730 BUZ 82 Diodes BUZ C 840 irf 840 Diodes BUZ 840 BU 102
Contextual Info: L^mg SGS-THOMSON consumer A / f M M iL K gW M tSS TV, MONITORS AND VCR CIRCUITS BIPOLAR POWER TRANSISTORS AND DARLINGTONS FOR MONOCHROME DEFLECTION 'c v CBO v CEO ptot A (V) (V) <W) 800 800 900 900 330 330 400 400 400 400 400 400 600 330 400 330 330 6 6

IRF 850

Abstract: mje13005-1 transistors bu 407 13005 A 13005 ballast IRF 426 IRFP 450 application 13007 applications SGSP364 IRF 810
Contextual Info: L^mg SGS-THOMSON A / f MMiLKgWMtSS consum er TV, MONITORS AND VCR CIRCUITS BIPOLAR POWER TRANSISTORS AND DARLINGTONS FOR MONOCHROME DEFLECTION v CBO 'c v CEO T yp e N P N Package ptot hFE @ V (A) 800 800 900 900 330 330 400 400 400 400 400 400 600 330 400

IRFP 740

Abstract: SGSP364 sgsp369 TSD4M250V IRF 810 IRFP150 SGS100MA010D1 TSD4M350V TSD4M351V 220 to 110 power
Contextual Info: L^mg SGS-THOMSON A/f consumer MMiLKgWMtSS TV, MONITORS AND VCR CIRCUITS BIPOLAR POWER TRANSISTORS AND DARLINGTONS FOR MONOCHROME DEFLECTION 'c v CBO v CEO ptot A (V) (V) <W) 800 800 900 900 330 330 400 400 400 400 400 400 600 330 400 330 330 6 6 6 6 7 7

irfp 950

Abstract: tsd4m450v SGSP479 transistor BUZ45 SGSP369 BUZ74 STHV82 IRFP 740 IRF 950 SGSP239
Contextual Info: L^mg SGS-THOMSON A/f consumer M M iL K gW M tSS TV, MONITORS AND VCR CIRCUITS BIPOLAR POWER TRANSISTORS AND DARLINGTONS FOR MONOCHROME DEFLECTION 'c v CBO v CEO ptot A (V) (V) <W) 800 800 900 900 330 330 400 400 400 400 400 400 600 330 400 330 330 6 6 6

bdl 39

Abstract: SPC-630 Hamamatsu avalanche diode BDL-473-SMC galvo scanner Picosecond Pulse Labs SPC-730 12V fluo SPC-130 SPC-535
Contextual Info: Becker & Hickl GmbH Technology Leader in Photon Counting Technology Leader in Photon Counting About bh Founded in 1993, Becker & Hickl have introduced a proprietary time-correlated single-photon counting principle that made TCSPC more than 100 times faster than the existing devices. Moreover, bh introduced a multi-dimensional TCSPC process that

ksd 302 250v, 10a

Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle

IRF123

Abstract: IRF120 IRF1 CQ 1565 RT irf121 IRF122 RF123 IRF1Z0
Contextual Info: Standard Power MOSFETs- IRF120, IRF121, IRF122, IRF123 File Number 1565 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors N-C HANNEL EN HANCEM ENT MODE 7.0A and 8.0A, 60V-100V

1SS353

Abstract: 7626 1SS355 1SS354 1ss35
Contextual Info: K /D io d e s 1SS353/1SS354/1SS355 1SS353/1SS354/1SS355 Silicon Epitaxial Planar High-Speed Switching Diodes • nm • W f i ' i i i 0/D im e n s io n s Unit : mm 1) ' m M n m $ < z r T * & z ( u s m )0 2) (trr= 2 n s Typ.) T’ & - 5 0 3) n a s u i# ' « ;,

delta dps 298 cp

Abstract: delta dps 298 cp-1 IRF 8030 irf 4710 bbc 598 479 DIODE F4049 sn 94042 Switching power supplies Delta electronics dps MR 4710 ci 4047B
Contextual Info: FAIRCHILD BIPOLAR M IC R O P R O C E S S O R □ATABOOK MACROLOGIC BIPOLAR MICROPROCESSOR OATABOOK FAIRCHILD 4 6 4 Ellis S tre e t, M o u n ta in V ie w , C alifo rn ia 9 4 0 4 2 c 1976 F a i r c h il d C a m e r a a n d In s t r u m e n t C o r p o r a t i o n / 4 6 4 E llis S t r e e t , M o u n t a i n V i e w , C a li f o r n ia 9 4 0 4 2 / 4 1 5 9 6 2 - 5 0 1 1 / T W X

IRF 544 N MOSFET

Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511
Contextual Info: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no

IRF160

Abstract: 1RF151
Contextual Info: MOTOROLA SC XSTRS/R F IME 0 I b3fe,72S4 0 0 0 = 1 ^ 3 MOTOROLA T j3 $ - / 3 m SEM IC O N D U C T O R TECHNICAL DATA IRF150 IRF151 IRF152 Pow er Field Effect Transistor N-Channel Enhancem ent-M ode S ilic o n G ate T M O S T h e se T M O S P o w e r F E T s are d e sign e d for h igh

TBA121-2

Abstract: TA12-11HWA r700000 QVQ181 RZ-12 TA12-11 TC12-11HWA 11ewa 7 46X4
Contextual Info: ~7¿f^-^cl a / 7 V b ~ 0 0 s / ' 7 ^ S - 0 i ' 7 30m m 1.2 INCH 5x7 DOT M A TR IX D ISP LA Y S TA12-11 TBA12-11 TBA12-12 TBA12-22 • TC12-11 TBC12-11 TBC12-12 TBC12-22 - Features Description • 1.2 INCH MATRIX HEIGHT. The Bright Red source color devices are made with Gallium

DALE RESISTOR NETWORKS

Abstract: Mil-T-23648 m8340102 APD-256M026-1 APD-222G007 CRCW DALE APD-256M026 APD-480M021-1
Contextual Info: A C O M PA N Ÿ OF G eneral Index/S urface Mount Index T hick Film Resistor N etw orks, Resistor/Capacitor Netw orks, C apacitor N etw o rks, Ladder N etw orks and Custom Phone: 402 371 -0080 Dale Phone: (818) 781-1642 Dale, Techno Division M83401/04, 05,06, 07, 08, 09, resistor

Contextual Info: International I«R Rectifier PD -5.055A PRELIMINARY "HALF-BRIDGE” IGBT INT-A-PAK G A 100 T S 6 0 U Ultra-Fast Speed IGBT Features V qes — 600V • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200

GA75TS60U

Contextual Info: International I«R Rectifier PD -5.050B PR E LIM IN A R Y "HALF-BRIDGE” IGBT INT-A-PAK GA75TS60U Ultra-Fast Speed IGBT F eatu res V ces = 600V • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200

hy 214 A Display

Abstract: MIL-R-26 apd 128*128 APD-256M026-1 APD-256M026 APD-480M021-1 irf 346
Contextual Info: A COMPANY OF. A lphabetical Index P roducts Only 7, 8, surface mount, hybrid chip th e rm istors.190 10, 20, 30, 40, 50, 60, NTC therm istors.202 300, printed circuit board connectors.293 IB , uncoated disc thermistors, material "B ". 192

irf 210 mosfet

Contextual Info: PD - 95499 AUTOMOTIVE MOSFET IRF1302PbF HEXFET Power MOSFET Benefits l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 20V

IRF1302PBF

Abstract: AN-1005
Contextual Info: PD - 95499 AUTOMOTIVE MOSFET IRF1302PbF HEXFET Power MOSFET Benefits l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 20V

Contextual Info: PD - 95407A IRF1302SPbF IRF1302LPbF Benefits l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free HEXFET Power MOSFET D VDSS = 20V

Contextual Info: PD - 95407A IRF1302SPbF IRF1302LPbF Benefits l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free HEXFET Power MOSFET D VDSS = 20V

transistor tt 2170

Abstract: hudi HD64F2170 Nippon capacitors
Contextual Info: REJ09B0149-0200Z The revision list can be viewed directly by cliking the title page. The revision list summarizes the locations of revisions and additions. Details should always be checked by referring to the relevant text. 16 H8S/2172Group Hardware Manual

HD64F2170

Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

transistor tt 2170

Abstract: ep3285 Nippon capacitors
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

MC34012

Abstract: ac1f MC34012-1 RC3A
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MC34012-1 MC34012-2 MC34012-3 TELEPHONE TONE RINGER TELEPHO N E TO NE RINGER • C om plete Telephone Bell R eplacem ent C irc u it w ith M in im u m E xternal C om ponents • O n -C hip Diode Bridge and T ra n sie n t P rotection