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    IRF 9246 Search Results

    IRF 9246 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    68492-460HLF
    		Amphenol Communications Solutions BergStik®, Board to Board connector, Unshrouded Right Angled Header, Through Hole, Double Row, 60 Positions, 2.54 mm (0.100in)Pitch. Visit Amphenol Communications Solutions
    68492-462HLF
    		Amphenol Communications Solutions BergStik®, Board to Board connector, Unshrouded Right Angled Header, Through Hole, Double Row, 62 Positions, 2.54 mm (0.100in)Pitch. Visit Amphenol Communications Solutions
    68692-468HLF
    		Amphenol Communications Solutions BergStik®, Board to Board connector, Unshrouded Vertical Header, Through Hole, Double Row, 68 Positions, 2.54 mm (0.100in) Pitch. Visit Amphenol Communications Solutions
    68492-468HLF
    		Amphenol Communications Solutions BergStik®, Board to Board connector, Unshrouded Right Angled Header, Through Hole, Double Row, 68 Positions, 2.54 mm (0.100in)Pitch. Visit Amphenol Communications Solutions
    68692-464HLF
    		Amphenol Communications Solutions BergStik®, Board to Board connector, Unshrouded Vertical Header, Through Hole, Double Row, 64 Positions, 2.54 mm (0.100in) Pitch. Visit Amphenol Communications Solutions

    IRF 9246 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IRF 260 N

    Abstract: irf 44 n IRF 409 irf 9246 P 181 YE IRF 1060 IRF 1040 9249B HEXFET IRF
    Contextual Info: IRLI3705N Package Outline HEXFET TO-220 Fullpak Outline Dimensions are shown in millimeters inches 10.60 (.417 ) 10.40 (.409 ) ø 3 .40 (.1 33) 3 .10 (.1 23) 4.80 (.189 ) 4.60 (.181 ) -A3.7 0 (.145) 3.2 0 (.126) 16 .0 0 (.630) 15 .8 0 (.622) 2.80 (.110)


    Original     		IRLI3705N O-220 IRF 260 N irf 44 n IRF 409 irf 9246 P 181 YE IRF 1060 IRF 1040 9249B HEXFET IRF PDF

    14.5M 1982

    Abstract: IRF1010E irf 9246 TO-247AC Package IRF1010
    Contextual Info: IRFP048N Package Outline HEXFET TO-247AC Outline Dimensions are shown in millimeters inches -D - 3 .6 5 (.1 4 3 ) 3 .5 5 (.1 4 0 ) 1 5 .90 (.6 2 6) 1 5 .30 (.6 0 2) -B- 0 .25 (.0 1 0) M D B M -A5 .5 0 (.2 1 7 ) 2 0 .3 0 (.80 0 ) 1 9 .7 0 (.77 5 ) 2X 1 2


    Original     		IRFP048N O-247AC O-247-A 14.5M 1982 IRF1010E irf 9246 TO-247AC Package IRF1010 PDF

    14.5M 1982

    Abstract: irf 9246 IRF1010E TO-247AC Package IRF 1010 irf 44 n
    Contextual Info: IRFP048N Package Outline HEXFET TO-247AC Outline Dimensions are shown in millimeters inches -D - 3 .6 5 (.1 4 3 ) 3 .5 5 (.1 4 0 ) 1 5 .90 (.6 2 6) 1 5 .30 (.6 0 2) -B- 0 .25 (.0 1 0) M D B M -A5 .5 0 (.2 1 7 ) NOT ES : 2 0 .3 0 (.80 0 ) 1 9 .7 0 (.77 5 )


    Original     		IRFP048N O-247AC O-247-A 14.5M 1982 irf 9246 IRF1010E TO-247AC Package IRF 1010 irf 44 n PDF

    irfz34n equivalent

    Abstract: IRFZ34N IRFZ34N MOSFET *rfz34n
    Contextual Info: PD -9.1276C IRFZ34N HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Ease of Paralleling Description l D l VDSS = 55V RDS on = 0.040Ω G ID = 29A S Fifth Generation HEXFETs from International Rectifier


    Original     		1276C IRFZ34N O-220 irfz34n equivalent IRFZ34N IRFZ34N MOSFET *rfz34n PDF

    irfz34n

    Contextual Info: PD -9.1276C IRFZ34N HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Ease of Paralleling Description l D l VDSS = 55V RDS on = 0.040Ω G ID = 29A S Fifth Generation HEXFETs from International Rectifier


    Original     		1276C IRFZ34N O-220 irfz34n PDF

    IRFZ34N

    Abstract: irfz34n equivalent irf 405
    Contextual Info: PD -9.1276C IRFZ34N HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Ease of Paralleling Description l D l VDSS = 55V RDS on = 0.040Ω G ID = 29A S Fifth Generation HEXFETs from International Rectifier


    Original     		1276C IRFZ34N O-220 IRFZ34N irfz34n equivalent irf 405 PDF

    irf 9246

    Abstract: IRF1010E 14.5M 1982 irf1010
    Contextual Info: IRFP048N Package Outline HEXFET TO-247AC Outline Dimensions are shown in millimeters inches -D - 3 .6 5 (.1 4 3 ) 3 .5 5 (.1 4 0 ) 1 5 .90 (.6 2 6) 1 5 .30 (.6 0 2) -B- 0 .25 (.0 1 0) M D B M -A5 .5 0 (.2 1 7 ) 2 0 .3 0 (.80 0 ) 1 9 .7 0 (.77 5 ) 2X 1 2


    Original     		IRFP048N O-247AC O-247-A irf 9246 IRF1010E 14.5M 1982 irf1010 PDF

    IRFZ34N

    Abstract: IRF 250
    Contextual Info: PD -9.1276C IRFZ34N HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Ease of Paralleling Description l D l VDSS = 55V RDS on = 0.040Ω G ID = 29A S Fifth Generation HEXFETs from International Rectifier


    Original     		1276C IRFZ34N O-220 IRF1010 IRFZ34N IRF 250 PDF

    HFA25PB60

    Abstract: IRFP250
    Contextual Info: PD -2.338 HFA25PB60 HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Guaranteed Avalanche Specified at Operating Conditions Benefits • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching


    Original     		HFA25PB60 112nC HFA25PB60 IRFP250 PDF

    irf 9246

    Abstract: IRF9Z34N
    Contextual Info: IRF9Z34N Package Outline TO-220AB Outline Dimensions are shown in millimeters inches 2 . 8 7 ( .1 1 3 ) 2 . 6 2 ( .1 0 3 ) 1 0 . 5 4 (. 4 1 5 ) 1 0 . 2 9 (. 4 0 5 ) -B - 3 . 7 8 (. 1 4 9 ) 3 . 5 4 (. 1 3 9 ) 4 . 6 9 ( .1 8 5 ) 4 . 2 0 ( .1 6 5 ) -A - 1 .3 2 (. 0 5 2 )


    Original     		IRF9Z34N O-220AB irf 9246 IRF9Z34N PDF

    HFA30PA60C

    Abstract: IRFP250 irf 44 ns
    Contextual Info: PD -2.336 rev. A 04/98 HFA30PA60C HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • Ultrafast Recovery Ultrasoft Recovery Very Low I RRM Very Low Qrr Guaranteed Avalanche Specified at Operating Conditions Benefits • Reduced RFI and EMI


    Original     		HFA30PA60C HFA30PA60C IRFP250 irf 44 ns PDF

    IRF540N

    Abstract: IRFP140N
    Contextual Info: PD - 91343B IRFP140N HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 0.052Ω G ID = 33A S Description Fifth Generation HEXFETs from International Rectifier


    Original     		91343B IRFP140N O-247 IRF540N IRFP140N PDF

    IRL3402

    Abstract: MOSFET 700V TO 220
    Contextual Info: PD - 9.1697 IRL3402 PRELIMINARY HEXFET Power MOSFET l l l l Advanced Process Technology Optimized for 4.5V-7.0V Gate Drive Ideal for CPU Core DC-DC Converters Fast Switching D VDSS = 20V RDS on = 0.01Ω G Description ID = 85A… S These HEXFET Power MOSFETs were designed


    Original     		IRL3402 O-220 O-220 IRL3402 MOSFET 700V TO 220 PDF

    *f1010e

    Abstract: IRF1010E IRF 315
    Contextual Info: PD - 9.1670A International IO R Rectifier IRF1010E HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Vdss = R ü S o n = Id 60V 0.012Í2 = 81 A(D Description Fifth G e n e ratio n H E X F E T s from International R ectifier


    OCR Scan     		IRF1010E *f1010e IRF1010E IRF 315 PDF

    IRFI1310N

    Abstract: IRF1310N 4.5V TO 100V INPUT REGULATOR
    Contextual Info: Previous Datasheet Index Next Data Sheet PD 9.1373 IRFI1310N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D


    Original     		IRFI1310N IRFI1310N IRF1310N 4.5V TO 100V INPUT REGULATOR PDF

    IRL6903

    Contextual Info: PD - 9.1538B IRL6903 HEXFET Power MOSFET Logic-Level Gate Drive l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l D VDSS = -30V RDS on = 0.011Ω G ID = -105A…


    Original     		1538B IRL6903 -105A O-220 IRL6903 PDF

    IRF3315

    Contextual Info: PD 9.1623 IRF3315 PRELIMINARY HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 150V RDS on = 0.082Ω G Description ID = 21A S Fifth Generation HEXFETs from International Rectifier


    Original     		IRF3315 O-220 IRF3315 PDF

    IRFP150N

    Abstract: IRF1310N AM 22A irf 9246 IRF 450 MOSFET 4.5V TO 100V INPUT REGULATOR
    Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1503 IRFP150N PRELIMINARY HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 0.036Ω G


    Original     		IRFP150N O-247 IRFP150N IRF1310N AM 22A irf 9246 IRF 450 MOSFET 4.5V TO 100V INPUT REGULATOR PDF

    IRFz44n equivalent

    Abstract: IRFIZ44N IRFZ44N IRFIZ44N equivalent irf 630
    Contextual Info: PD - 9.1403A IRFIZ44N HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D VDSS = 55V RDS on = 0.024Ω G ID = 31A S Description Fifth Generation HEXFETs from International Rectifier


    Original     		IRFIZ44N O-220 IRFz44n equivalent IRFIZ44N IRFZ44N IRFIZ44N equivalent irf 630 PDF

    1530A

    Abstract: f1010e IRF 10A 55V irf 9246 I840G IRF9Z34N IRFI9Z34N IRF MOSFET 10A P irf power mosfet Equivalent IRF 44
    Contextual Info: PD - 9.1530A IRFI9Z34N HEXFET Power MOSFET Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l P-Channel l Fully Avalanche Rated Description l D VDSS = -55V RDS on = 0.10Ω G ID = -14A


    Original     		IRFI9Z34N O-220 1530A f1010e IRF 10A 55V irf 9246 I840G IRF9Z34N IRFI9Z34N IRF MOSFET 10A P irf power mosfet Equivalent IRF 44 PDF

    IRF3205 equivalent

    Abstract: irf3205 mosfet transistor irf3205 DRIVER IRF3205 TO-220 EK 110 IRF3205 IRF3205 E DATASHEET IRF3205 IR Equivalent IRF 44 DSA0030791
    Contextual Info: PD - 9.1374B IRFI3205 HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D l VDSS = 55V RDS on = 0.008Ω


    Original     		1374B IRFI3205 O-220 IRF3205 equivalent irf3205 mosfet transistor irf3205 DRIVER IRF3205 TO-220 EK 110 IRF3205 IRF3205 E DATASHEET IRF3205 IR Equivalent IRF 44 DSA0030791 PDF

    diode R 360 BL

    Abstract: IRFP048N TO-247AC Package IRFZ48N
    Contextual Info: PD - 9.1409A IRFP048N HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 0.016Ω G Description ID = 64A S Fifth Generation HEXFETs from International Rectifier


    Original     		IRFP048N O-247 diode R 360 BL IRFP048N TO-247AC Package IRFZ48N PDF

    f1010e

    Abstract: IRFI1010N equivalent IRF1010N IRFI1010N IRF 260 N irf 460 IRF 409
    Contextual Info: PD - 9.1373A IRFI1010N HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D VDSS = 55V RDS on = 0.012Ω G ID = 49A S Description Fifth Generation HEXFETs from International Rectifier


    Original     		IRFI1010N O-220 f1010e IRFI1010N equivalent IRF1010N IRFI1010N IRF 260 N irf 460 IRF 409 PDF

    irf 930

    Abstract: IRF4905 equivalent SEC IRF 640 R 133 A IRF4905 IRFI4905 equivalent of irf4905 IRF 260 N
    Contextual Info: PD - 9.1526A IRFI4905 HEXFET Power MOSFET Advanced Process Technology Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l P-Channel l Fully Avalanche Rated Description l D l VDSS = -55V RDS on = 0.02Ω G ID = -41A


    Original     		IRFI4905 O-220 irf 930 IRF4905 equivalent SEC IRF 640 R 133 A IRF4905 IRFI4905 equivalent of irf4905 IRF 260 N PDF