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    IRF4905 Price and Stock

    Infineon Technologies AG IRF4905STRLPBF

    MOSFETs MOSFT PCh -55V -74A 20mOhm 120nC
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    Mouser Electronics IRF4905STRLPBF 12,134
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    Infineon Technologies AG IRF4905LPBF

    MOSFETs MOSFT PCh -55V -74A 20mOhm 120nC
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    Infineon Technologies AG IRF4905PBF

    MOSFETs MOSFT PCh -55V -74A 20mOhm 120nC
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    Mouser Electronics IRF4905PBF 5
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    Infineon Technologies AG IRF4905STRRPBF

    Trans MOSFET P-CH Si 55V 74A 3-Pin(2+Tab) D2PAK T/R
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    Verical () IRF4905STRRPBF 32,000 228
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    Infineon Technologies AG IRF4905PBF (5409799)

    MOSFET, Power, P-Ch, VDSS -55V, RDS(ON) 0.02Ohm, ID -74A, TO-220AB, PD 200W, VGS +/-20V
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    RS IRF4905PBF (5409799) Bulk 1
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    IRF4905 Datasheets (34)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF PDF Size Page count
    IRF4905
    International Rectifier -55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package Original PDF 175.54KB 8
    IRF4905
    International Rectifier HEXFET Power MOSFET Original PDF 108.43KB 8
    IRF4905
    International Rectifier -55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package; A IRF4905 with Standard Packaging Original PDF 675.42KB 9
    IRF4905
    Toshiba Power MOSFETs Cross Reference Guide Original PDF 165.78KB 67
    IRF4905
    International Rectifier Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, P-Channel, Power, -55V, -64A, Pkg Style TO-220AB Scan PDF 50.01KB 1
    IRF4905
    Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF 44.91KB 1
    IRF4905L
    International Rectifier HEXFET Power MOSFET Original PDF 164.48KB 10
    IRF4905L
    International Rectifier -55V Single P-Channel HEXFET Power MOSFET in a TO-262 package; A IRF4905L with Standard Packaging Original PDF 168.67KB 11
    IRF4905L
    Toshiba Power MOSFETs Cross Reference Guide Original PDF 165.78KB 67
    IRF4905L
    International Rectifier Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Rectifier Scan PDF 73.98KB 1
    IRF4905LPBF
    International Rectifier Original PDF 164.48KB 10
    IRF4905LPBF
    International Rectifier -55V Single P-Channel HEXFET Power MOSFET in a TO-262 package; Similar to IRF4905L with Lead Free packaging Original PDF 168.67KB 11
    IRF4905LPBF
    International Rectifier FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 55V 42A TO-262 Original PDF 12
    IRF4905PBF
    International Rectifier -55V Single P-Channel Lead-Free HEXFET Power MOSFET in a TO-220AB package Original PDF 175.54KB 8
    IRF4905PBF
    International Rectifier -55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package; A IRF4905PBF with Standard Packaging Original PDF 675.42KB 9
    IRF4905S
    International Rectifier Power MOSFET(Vdss=-55V, Rds(on)=0.02ohm, Id=-74A) Original PDF 164.48KB 10
    IRF4905S
    International Rectifier HEXFET Power MOSFET Original PDF 177.67KB 8
    IRF4905S
    International Rectifier -55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package; A IRF4905S with Standard Packaging Original PDF 168.67KB 11
    IRF4905S
    Toshiba Power MOSFETs Cross Reference Guide Original PDF 165.78KB 67
    IRF4905S
    International Rectifier Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Rectifier Scan PDF 73.98KB 1

    IRF4905 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IRF4905

    Abstract: IRF4905 equivalent transistor irf4905 IRF4905 P-channel power irf 930 1280c
    Contextual Info: PD - 9.1280C IRF4905 HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l D l VDSS = -55V RDS on = 0.02Ω G ID = -74A


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    1280C IRF4905 O-220 IRF4905 IRF4905 equivalent transistor irf4905 IRF4905 P-channel power irf 930 1280c PDF

    IRF4905

    Abstract: IRF4905L IRF4905S
    Contextual Info: PD - 9.1478A IRF4905S/L HEXFET Power MOSFET Advanced Process Technology Surface Mount IRF4905S l Low-profile through-hole (IRF4905L) l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l D l VDSS = -55V RDS(on) = 0.02Ω


    Original
    IRF4905S/L IRF4905S) IRF4905L) IRF4905 IRF4905L IRF4905S PDF

    L3103L

    Abstract: 0T1S IRF4905L
    Contextual Info: PD-9.1478A International 3BR Rectifier IRF4905S/L HEXFET Power MOSFET • • • • • • • A dvanced Process Technology S urface M ount IRF4905S Low -profile through-hole (IRF4905L) 175 °C O perating Tem perature Fast Switching P-Channel Fully Avalanche Rated


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    IRF4905S) IRF4905L) IRF4905S/L L3103L 0T1S IRF4905L PDF

    IRF4905S

    Abstract: IRF4905 IRF4905 P-channel power IRF4905S/L IRF4905L
    Contextual Info: PD - 9.1478A IRF4905S/L HEXFET Power MOSFET Advanced Process Technology Surface Mount IRF4905S l Low-profile through-hole (IRF4905L) l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l D l VDSS = -55V RDS(on) = 0.02Ω


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    IRF4905S/L IRF4905S) IRF4905L) IRF4905S IRF4905 IRF4905 P-channel power IRF4905S/L IRF4905L PDF

    Contextual Info: IRF4905 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)55 V(BR)GSS (V)20 I(D) Max. (A)64# I(DM) Max. (A) Pulsed I(D)45 @Temp (øC)100# IDM Max (@25øC Amb)260# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)150# Minimum Operating Temp (øC)-55õ


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    IRF4905 PDF

    irf 930

    Abstract: IRF4905 1280B IRF4905 P-channel power
    Contextual Info: PD - 9.1280B IRF4905 PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l D l VDSS = -55V RDS on = 0.02Ω


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    1280B IRF4905 O-220 irf 930 IRF4905 1280B IRF4905 P-channel power PDF

    IRF4905

    Contextual Info: IRF4905 TO-220AB l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated Power MOSFET Description D The TO-220 package is universally preferred for all


    Original
    IRF4905 O-220AB O-220 O-220 IRF4905 PDF

    IRF4905SPbF

    Abstract: IRF4905S IRL3103L
    Contextual Info: PD - 97034 IRF4905SPbF IRF4905LPbF HEXFET Power MOSFET Features O O O O O O O Advanced Process Technology Ultra Low On-Resistance 150°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Some Parameters Are Differrent from IRF4905S


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    IRF4905SPbF IRF4905LPbF IRF4905S O-262 -100A/ IRF4905S/L O-262 IRF4905SPbF IRF4905S IRL3103L PDF

    IRF4905

    Abstract: IRF4905 P-channel power
    Contextual Info: PD - 9.1280B International IQ R Rectifier IRF4905 PRELIMINARY HEXFET Power MOSFET • • • • • • • A dvanced Process Technology Ultra Low On -Resistance D ynam ic dv/dt Rating 17 5 °C Operating Tem perature Fast Switching P-C hannel Fully A valanche Rated


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    1280B IRF4905 IRF4905 IRF4905 P-channel power PDF

    GS 069 LF

    Abstract: IRF4905
    Contextual Info: PD - 9.1280 International S Rectifier IRF4905 PROVISIONAL HEXFET Power MOSFET • • • • • • Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Ease of paralleling Vdss = -55V R DS on =


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    IRF4905 O-220 Liguria49 GS 069 LF IRF4905 PDF

    IRF4905PBF

    Abstract: IRF4905P
    Contextual Info: PD - 94816 IRF4905PbF Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated Lead-Free Description HEXFET Power MOSFET D VDSS = -55V RDS on = 0.02Ω G ID = -74A


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    IRF4905PbF O-220 O-220AB. O-220AB IRF1010 IRF4905PBF IRF4905P PDF

    IRF4905

    Contextual Info: PD - 91280D IRF4905 l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated HEXFET Power MOSFET D VDSS = -55V RDS on = 0.02Ω G ID = -74A S Description


    Original
    91280D IRF4905 O-220 O-220AB IRF4905 PDF

    IRF4905

    Abstract: IRF4905 P-channel power IRF4905 p-channel ISS 99 diode datasheet 91280D IRF4905L
    Contextual Info: PD - 91280D IRF4905 l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated HEXFET Power MOSFET D VDSS = -55V RDS on = 0.02Ω G ID = -74A S Description


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    91280D IRF4905 O-220 O-220AB IRF4905 IRF4905 P-channel power IRF4905 p-channel ISS 99 diode datasheet 91280D IRF4905L PDF

    IRF4905S

    Contextual Info: PD - 97034 IRF4905SPbF IRF4905LPbF HEXFET Power MOSFET Features O O O O O O O Advanced Process Technology Ultra Low On-Resistance 150°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Some Parameters Are Differrent from IRF4905S


    Original
    IRF4905SPbF IRF4905LPbF IRF4905S O-262 AN-994. IRF4905S PDF

    IRF4905

    Contextual Info: PD-9.1280C International 3BR Rectifier IRF4905 HEXFET Power MOSFET • • • • • • • A dvanced Process Technology Ultra Low O n-Resistance Dynam ic dv/dt Rating 175 °C O perating Tem perature Fast Switching P-Channel Fully Avalanche Rated V d s s = -5 5 V


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    1280C IRF4905 O-220 IRF4905 PDF

    IRF4905

    Contextual Info: IRF4905S/L Electrical Characteristics @ TJ = 25°C unless otherwise specified Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage gfs


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    IRF4905S/L IRF4905 PDF

    IRF4905S

    Abstract: IRF530S
    Contextual Info: PD - 97034 IRF4905SPbF IRF4905LPbF HEXFET Power MOSFET Features O O O O O O O Advanced Process Technology Ultra Low On-Resistance 150°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Some Parameters Are Differrent from IRF4905S


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    IRF4905SPbF IRF4905LPbF IRF4905S O-262 AN-994. IRF4905S IRF530S PDF

    IRF4905PBF

    Abstract: diode 640
    Contextual Info: PD - 94816 IRF4905PbF Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated Lead-Free Description HEXFET Power MOSFET D VDSS = -55V RDS on = 0.02Ω G ID = -74A


    Original
    IRF4905PbF O-220 O-220AB. O-220AB IRF1010 IRF4905PBF diode 640 PDF

    IRF4905S

    Contextual Info: PD - 97034 IRF4905SPbF IRF4905LPbF HEXFET Power MOSFET Features O O O O O O O Advanced Process Technology Ultra Low On-Resistance 150°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Some Parameters Are Differrent from IRF4905S


    Original
    IRF4905SPbF IRF4905LPbF IRF4905S O-262 AN-994. IRF4905S PDF

    Contextual Info: International M R Rectifier PD -9.1478 IRF4905S PRELIMINARY HEXFET Power MOSFET • Advanced Process Technology • Ultra Low On-Resistance • Surface Mount • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • P-Channel • Fully Avalanche Rated


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    IRF4905S PDF

    IRF4905PBF

    Abstract: IRF4905 IRF4905P
    Contextual Info: PD - 94816 IRF4905PbF Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated Lead-Free Description HEXFET Power MOSFET D VDSS = -55V RDS on = 0.02Ω G ID = -74A


    Original
    IRF4905PbF O-220 O-220AB. O-220AB IRF1010 IRF4905PBF IRF4905 IRF4905P PDF

    IRF4905

    Abstract: IRF4905 P-channel power irf1010 applications IRF1010 E IRF1010
    Contextual Info: Previous Datasheet Index Next Data Sheet PD 9.1280A IRF4905 PRELIMINARY HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated


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    IRF4905 IRF4905 IRF4905 P-channel power irf1010 applications IRF1010 E IRF1010 PDF

    IRF4905

    Abstract: IRF4905 P-channel power 1280C
    Contextual Info: PD - 9.1280C IRF4905 HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l D l VDSS = -55V RDS on = 0.02Ω G ID = -74A


    Original
    1280C IRF4905 O-220 IRF1010 IRF4905 IRF4905 P-channel power 1280C PDF

    IRF4905S

    Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1478A IRF4905S PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Surface Mount l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated


    Original
    IRF4905S IRF4905S PDF