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    IRF350 Price and Stock

    Infineon Technologies AG AUIRF3504

    MOSFET N-CH 40V 87A TO220AB
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    DigiKey AUIRF3504 Tube
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    Rochester Electronics AUIRF3504 27 1
    • 1 $0.9028
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    • 100 $0.8486
    • 1000 $0.7674
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    Rochester Electronics LLC AUIRF3504

    AUTOMOTIVE HEXFET N CHANNEL
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    DigiKey AUIRF3504 Bulk 320
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    Infineon Technologies AG IRF350

    400V Single N-Channel Hi-Rel MOSFET in a TO-204AE package
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    Future Electronics IRF350 Bag 100
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    New Jersey Semiconductor Products, Inc. IRF350

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    Bristol Electronics IRF350 1,807 1
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    • 100 $17.7274
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    International Rectifier AUIRF3504

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    Bristol Electronics AUIRF3504 400
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    Rochester Electronics AUIRF3504 10,600 1
    • 1 $0.9028
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    ComSIT USA AUIRF3504 350
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    Find more IRF350 price and stock on Findchips.com

    IRF350 Datasheets (35)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRF350 Harris Semiconductor Power MOSFET Selection Guide Original PDF
    IRF350 International Rectifier HEXFET Transistor Original PDF
    IRF350 Intersil 15A, 400V, 0.300 ?, N-Channel Power MOSFET Original PDF
    IRF350 Fairchild Semiconductor N-Channel Power MOSFETs, 15A, 350V/400V Scan PDF
    IRF350 FCI POWER MOSFETs Scan PDF
    IRF350 Frederick Components Power MOSFET Selection Guide Scan PDF
    IRF350 General Electric Power Transistor Data Book 1985 Scan PDF
    IRF350 General Electric N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 15A. Scan PDF
    IRF350 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRF350 International Rectifier N-Channel Power MOSFETs Scan PDF
    IRF350 International Rectifier TO-3 N-Channel Hexfet Power MOSFETS Scan PDF
    IRF350 IXYS High Voltage Power MOSFETs Scan PDF
    IRF350 IXYS High Voltage Power MOSFETs Scan PDF
    IRF350 Motorola Switchmode Datasheet Scan PDF
    IRF350 Motorola European Master Selection Guide 1986 Scan PDF
    IRF350 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    IRF350 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    IRF350 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    IRF350 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    IRF350 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    IRF350 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRF350

    Abstract: IRF350 and its equivalent TB334 TA9399
    Text: IRF350 Data Sheet March 1999 15A, 400V, 0.300 Ohm, N-Channel Power MOSFET Features This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers,


    Original     		PDF IRF350 TA9399. IRF350 IRF350 and its equivalent TB334 TA9399

    Untitled

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR SHD239504 TECHNICAL DATA DATA SHEET 1097, REV. - HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 400 Volt, 0.3 Ohm, 9.0A MOSFET œ Low RDS on œ Electrically Equivalent to IRF350 Series MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25•C UNLESS OTHERWISE SPECIFIED.


    Original     		PDF SHD239504 IRF350 SHD239504

    SHD280504

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR SHD280504 TECHNICAL DATA DATA SHEET 4066, REV.- HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 400 Volt, 0.3 Ohm, 14A MOSFET œ Low RDS on œ Electrically Equivalent to IRF350 Series MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25•C UNLESS OTHERWISE SPECIFIED.


    Original     		PDF SHD280504 IRF350 00A/msec, SHD226504 O-204 SHD280504

    shd2184

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR SHD218504 TECHNICAL DATA DATA SHEET 1011, REV Formerly Part Number SHD2184/A/B HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 400 Volt, 0.3 Ohm, 9.0A MOSFET œ Low RDS on œ Equivalent to IRF350 Series MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25•C UNLESS OTHERWISE SPECIFIED.


    Original     		PDF SHD2184/A/B SHD218504 IRF350 shd2184

    SHD280504

    Abstract: IRF350 IRF350 and its equivalent
    Text: SENSITRON SEMICONDUCTOR SHD280504 TECHNICAL DATA DATA SHEET 4066, REV.- HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 400 Volt, 0.3 Ohm, 14A MOSFET œ Low RDS on œ Electrically Equivalent to IRF350 Series MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25•C UNLESS OTHERWISE SPECIFIED.


    Original     		PDF SHD280504 IRF350 SHD280504 IRF350 and its equivalent

    IRF350

    Abstract: IRF350 and its equivalent SHD219504
    Text: SENSITRON SEMICONDUCTOR SHD219504 TECHNICAL DATA DATA SHEET 607, REV - HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 400 Volt, 0.3 Ohm, 9.0A MOSFET œ Low RDS on œ Equivalent to IRF350 Series MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25•C UNLESS OTHERWISE SPECIFIED.


    Original     		PDF SHD219504 IRF350 15VGS, IRF350 and its equivalent SHD219504

    Untitled

    Abstract: No abstract text available
    Text: IRF350 2N6768 MECHANICAL DATA Dimensions in mm inches 39.95 (1.573) N-CHANNEL POWER MOSFET max. 30.40 (1.197) 30.15 (1.187) 4.09 (0.161) 3.84 (0.151) dia. 2 plcs. 11.18 (0.440) 10.67 (0.420) 2 1 26.67 (1.050) max. 17.15 (0.675) 16.64 (0.655) VDSS ID(cont)


    Original     		PDF IRF350 2N6768 O-204AA)

    Untitled

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR SHD219504 TECHNICAL DATA DATA SHEET 607, REV B HERMETIC POWER MOSFET N-CHANNEL FEATURES: 400 Volt, 0.3 Ohm, 9.0A MOSFET Low RDS on Equivalent to IRF350 Series MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25 C UNLESS OTHERWISE SPECIFIED.


    Original     		PDF SHD219504 IRF350

    Untitled

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR SHD218504 TECHNICAL DATA DATA SHEET 1011, REV Formerly Part Number SHD2184/A/B HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 400 Volt, 0.3 Ohm, 9.0A MOSFET œ Low RDS on œ Equivalent to IRF350 Series MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25•C UNLESS OTHERWISE SPECIFIED.


    Original     		PDF SHD2184/A/B SHD218504 IRF350

    IRF350

    Abstract: SHD218504
    Text: SENSITRON SEMICONDUCTOR SHD218504 TECHNICAL DATA DATA SHEET 1011, REV Formerly Part Number SHD2184/A/B HERMETIC POWER MOSFET N-CHANNEL FEATURES: • 400 Volt, 0.3 Ohm, 9.0A MOSFET • Low RDS on • Equivalent to IRF350 Series MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25°C UNLESS OTHERWISE SPECIFIED.


    Original     		PDF SHD218504 SHD2184/A/B IRF350 SHD218504

    Untitled

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR SHD219504 TECHNICAL DATA DATA SHEET 607, REV - HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 400 Volt, 0.3 Ohm, 9.0A MOSFET œ Low RDS on œ Equivalent to IRF350 Series MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25•C UNLESS OTHERWISE SPECIFIED.


    Original     		PDF SHD219504 IRF350 12USTRY SHD219504

    Untitled

    Abstract: No abstract text available
    Text: PD - 90339F IRF350 JANTX2N6768 JANTXV2N6768 [REF:MIL-PRF-19500/543] 400V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRF350 BVDSS 400V RDS(on) 0.300Ω ID 14A The HEXFETtechnology is the key to International


    Original     		PDF 90339F IRF350 JANTX2N6768 JANTXV2N6768 MIL-PRF-19500/543] O-204AA/AE)

    2N6768

    Abstract: IRF350
    Text: IRF350 2N6768 MECHANICAL DATA Dimensions in mm inches N-CHANNEL POWER MOSFET 39.95 (1.573) max. 30.40 (1.197) 30.15 (1.187) 4.09 (0.161) 3.84 (0.151) dia. 2 plcs. 11.18 (0.440) 10.67 (0.420) 2 26.67 (1.050) max. 17.15 (0.675) 16.64 (0.655) 1 VDSS ID(cont)


    Original     		PDF IRF350 2N6768 O-204AA) 2N6768 IRF350

    Untitled

    Abstract: No abstract text available
    Text: IRF350 2N6768 MECHANICAL DATA Dimensions in mm inches N-CHANNEL POWER MOSFET 39.95 (1.573) max. 30.40 (1.197) 30.15 (1.187) 4.09 (0.161) 3.84 (0.151) dia. 2 plcs. 11.18 (0.440) 10.67 (0.420) 2 26.67 (1.050) max. 17.15 (0.675) 16.64 (0.655) 1 VDSS ID(cont)


    Original     		PDF IRF350 2N6768 O-204AA)

    1RF350

    Abstract: Transistor IRF 044 IRF3503 TRANSISTOR 2SC 635 08/bup 3110 transistor
    Text: MOTOROLA SC I X S T R S /R F IM E D • MOTOROLA 005^75 ■i SEM ICONDUCTOR I 1 j IRF350 IRF351 IRF352 TECHNICAL DATA Part Number Voss 'DS on N-CHANNEL ENHANCEMENT-MODE SILICON GATE TM O S POWER FIELD EFFECT TRANSISTOR IRF350 400 V 0.3 a IRF351 350 V 0.3 n


    OCR Scan     		PDF IRF350 IRF351 IRF352 JRF350, 1RF350, 1RF352 IRF350, JRF351 1RF350 Transistor IRF 044 IRF3503 TRANSISTOR 2SC 635 08/bup 3110 transistor

    Untitled

    Abstract: No abstract text available
    Text: • M 3 0 2 5 7 1 D 0 S 3 T 4 a 2 HARRIS 7 f l b ■ H A S IR F350/351/352/353 IRF350R/351R/352R/353R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Features Package TO-2Q4AA • 13A and 15.0A, 350V - 400V • i"DS on) = ° -3 fi and 0 .4 fi


    OCR Scan     		PDF F350/351/352/353 IRF350R/351R/352R/353R IRF350, IRF351, IRF352, IRF353 IRF350R, IRF351R, IRF352R IRF353R

    irf 3110

    Abstract: IRF3503 irf350 IRf 334 IRf 92 0151 irf352 C055
    Text: MOTOROLA SEM ICONDUCTOR IRF350 IRF351 IRF352 TECHNICAL DATA N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR These TMOS P o w e r FETs are d e sig n e d fo r h ig h voltage, high speed p o w e r s w itc h in g a p p lica tio n s such as sw itch in g regulators,


    OCR Scan     		PDF IRF350 IRF351 IRF352 IRF350, irf 3110 IRF3503 IRf 334 IRf 92 0151 irf352 C055

    Untitled

    Abstract: No abstract text available
    Text: I p| |"0 f f Q tÌ O D Q I Provisional Data Sheet No. PD-9.339E IOR Rectifier JANTX2N6768 HEXFET POWER MOSFET JANTXV2N6768 [REF:MIL-PRF-19500/543] [GENERIC :IRF350] N -C H A N N E L 400 Volt, 0.300Q HEXFET H E X F E T technology is the key to International


    OCR Scan     		PDF JANTX2N6768 JANTXV2N6768 MIL-PRF-19500/543] IRF350] D02513Ã

    Motorola transistor 388 TO-204AA

    Abstract: No abstract text available
    Text: MOTOROLA SC X S T R S / R F bBF T> b3b?2SM □ □ ' l a m a I MOTb 3?o MOTOROLA • I SEM ICO NDUCTO R TECHNICAL DATA IRF350 N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR Part Number Voss IRF350 400 V This TMOS Power FET is designed for high voltage, high speed


    OCR Scan     		PDF IRF350 O-204AA) 97A-01 97A-03 O-204AE) Motorola transistor 388 TO-204AA

    IRF3530

    Abstract: IRF350 IRF351 IRF352 F-352 IRF353 IRF-352
    Text: D E | BÖ7SDÜ1 OGlöBD11] t, | ~ Ql 387 508 1 G E S O L I D S T A T E Standard Power MOSFETs 0 1E 18309 _ IRF350, IRF351, IRF352, IRF353 DT-?File Number 1826 Power M O S Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors


    OCR Scan     		PDF T-37-/J IRF350, IRF351, IRF352, IRF353 92CS-33741 IRF352 IRF353 IRF3530 IRF350 IRF351 F-352 IRF-352

    IRF350

    Abstract: LDR Cds IRF351 F352 IRF352 IRF353
    Text: - Standard Power MOSFETs File Number IRF350, IRF351, IRF352, IRF353 1826 Power M O S Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE D o 13 A and 15 A, 350 V - 4 0 0 V rDs on = 0.3 Q and 0.4 O


    OCR Scan     		PDF IRF350, IRF351, IRF352, IRF353 92CS-33741 IRF352 IRF353 75bvdss IRF350 LDR Cds IRF351 F352

    IRF3503

    Abstract: IRF350 IRF351 D86FQ2 350VOLTS
    Text: IM ÜF FIELD EFFECT POWER TRANSISTOR This series of N -C hannel Enhancem ent-m ode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­ ness and reliability. IRF350.351 D86FQ2.Q1 15 AMPERES


    OCR Scan     		PDF IRF350 D86FQ2 00A///sec, IRF3503 IRF351 350VOLTS

    irf350

    Abstract: IRF350N EC075
    Text: * 7m„ M g»(I[L[I(glT[KMO(g§ /= T SGS-THOMSON IRF350 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V DSS R DS(on IRF350 400 V 0.3 Q 15 A • HIGH VOLTAGE - FOR OFF-LINE SMPS • HIGH CURRENT - FOR SMPS UP TO 350W • ULTRA FAST SWITCHING - FOR OPERATION


    OCR Scan     		PDF IRF350 100KHZ SC-0244 irf350 IRF350N EC075

    IRF350R

    Abstract: IRF350 IRF351R IRF352R IRF353R transistors bipolar
    Text: _ Rugged Power MOSFETs File Num ber 2006 IRF350R, IRF351R, IRF352R, IRF353R Avalanche Energy Rated N-Channel Power MOSFETs 13A and 15A, 350V-400V ros on = 0 .3 0 and 0 .4 0 N-CHANNEL ENHANCEMENT MODE Features: • Single pulse avalanche energy rated


    OCR Scan     		PDF IRF350R, IRF351R, IRF352R, IRF353R 50V-400V 92CS-426M IRF352R IRF353R IRF350R IRF350 IRF351R transistors bipolar