TA9399 Search Results

TA9399 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
IRF350 Abstract: IRF350 and its equivalent TB334 TA9399 Contextual Info: IRF350 Data Sheet March 1999 15A, 400V, 0.300 Ohm, N-Channel Power MOSFET Features This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers,	Original	IRF350 TA9399. IRF350 IRF350 and its equivalent TB334 TA9399	PDF
RFH12N35 Abstract: RFH12N40 RFM12N35 RFM12N40 RFH12N Contextual Info: Gl De J BÛ7SGÔ1 O O l ö l t i l 0 3875081 G E SOLID STATE 01E Standard Power MOSFETs 18161 _ File Number 1630 RFH12N35, RFH12N40 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors TERMINAL DIAGRAM	OCR Scan	RFH12N35, RFH12N40 RFH12N35 RFH12N40* 7SD01 RFM12N35, RFM12N40 9ZCS-57236 RFH12N40 RFM12N35 RFM12N40 RFH12N	PDF
RFM12N40 Abstract: RFM12 B RFM12N35 Contextual Info: Standard Power MOSFETs — RFM12N35, RFM12N40 File Number 1787 N-Channel Enhancement-Mode Power Field-Effect Transistors 12 A, 350 V - 4 0 0 V N-CHANNEL ENHANCEMENT MODE rDs on = 0 .5 O Features: • SOA is power-dissipation lim ited ■ Nanosecond sw itching speeds	OCR Scan	RFM12N35, RFM12N40 RFM12N35 RFM12N40* AN-7254 AN-7260. 92cs-37236 92cs-37237 92cs-37238 92cs-37239 RFM12N40 RFM12 B	PDF
IRF350 Contextual Info: IRF350, IRF351, IRF352, IRF353 S e m iconductor October 1998 Data Sheet 13A and 15A, 350V and 400V, 0.300 and 0.400 Ohm, N-Channel Power MOSFETs These are N-Channel enhancem ent mode silicon gate power field effect transistors designed for applications such	OCR Scan	IRF350, IRF351, IRF352, IRF353 IRF350	PDF