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    IRF450 Price and Stock

    Infineon Technologies AG IRF450

    MOSFET N-CH 500V 12A TO204AA
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    DigiKey IRF450 Tube 100
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    • 100 $8.1184
    • 1000 $8.1184
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    Future Electronics IRF450 Tray 120
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    • 100 $23.68
    • 1000 $23.68
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    International Rectifier IRF450

    Trans MOSFET N-CH 500V 12A 3-Pin(2+Tab) TO-3
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    Arrow Electronics IRF450 1,625 16 Weeks 1
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    • 10 $24.5985
    • 100 $24.15
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    Bristol Electronics IRF450 14
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    Quest Components IRF450 2
    • 1 $25
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    ES Components IRF450 100
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    New Jersey Semiconductor Products, Inc. IRF450

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics IRF450 1,821 1
    • 1 $20.04
    • 10 $20.04
    • 100 $17.7274
    • 1000 $16.4328
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    New Jersey Semiconductor Products Inc IRF450

    POWER FIELD-EFFECT TRANSISTOR, 12A I(D), 500V, 0.5OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-204AA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components IRF450 1,456
    • 1 $21.71
    • 10 $21.71
    • 100 $21.71
    • 1000 $16.7
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    Vishay Siliconix IRF450-DIE

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    Quest Components IRF450-DIE 65
    • 1 $7.35
    • 10 $3.675
    • 100 $3.43
    • 1000 $3.43
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    Find more IRF450 price and stock on Findchips.com

    IRF450 Datasheets (33)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRF450 Harris Semiconductor Power MOSFET Selection Guide Original PDF
    IRF450 International Rectifier HEXFET TRANSISTORS 500V, N-CHANNEL 0.400 ? 12A Original PDF
    IRF450 Intersil 13A, 500V, 0.400 ?, N-Channel Power MOSFET Original PDF
    IRF450 Microsemi N Channel MOSFET Original PDF
    IRF450 Semelab N-Channel Power MOSFET Original PDF
    IRF450 FCI POWER MOSFETs Scan PDF
    IRF450 Frederick Components Power MOSFET Selection Guide Scan PDF
    IRF450 General Electric Power Transistor Data Book 1985 Scan PDF
    IRF450 General Electric N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 13A. Scan PDF
    IRF450 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRF450 International Rectifier TO-3 N-Channel Scan PDF
    IRF450 International Rectifier TO-3 N-Channel HEXFETs Scan PDF
    IRF450 International Rectifier N-Channel Power MOSFETs Scan PDF
    IRF450 IXYS High Voltage Power MOSFETs Scan PDF
    IRF450 IXYS High Voltage Power MOSFETs Scan PDF
    IRF450 Motorola European Master Selection Guide 1986 Scan PDF
    IRF450 Motorola Switchmode Datasheet Scan PDF
    IRF450 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    IRF450 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    IRF450 Unknown FET Data Book Scan PDF

    IRF450 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR SHD218505 TECHNICAL DATA DATA SHEET 1012, REV Formerly Part Number SHD2185/A/B HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 500 Volt, 0.3 Ohm, 9.0A MOSFET œ Low RDS on œ Equivalent to IRF450 Series MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25•C UNLESS OTHERWISE SPECIFIED.


    Original     		PDF SHD2185/A/B SHD218505 IRF450 250mA

    Untitled

    Abstract: No abstract text available
    Text: N-CHANNEL POWER MOSFET IRF450 • Hermeticaly Sealed TO-3 Metal Package • Simple Drive Requirements • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VDS VGS ID ID IDM PD Drain – Source Voltage Gate – Source Voltage


    Original     		PDF IRF450 O204-AA)

    IRF452

    Abstract: IRF453 IRF451 irf450
    Text: IRF450, IRF451, IRF452, IRF453 S E M I C O N D U C T O R 11A and 13A, 450V and 500V, 0.4 and 0.5 Ohm, N-Channel Power MOSFETs November 1997 Features Description • 11A and 13A, 450V and 500V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    Original     		PDF IRF450, IRF451, IRF452, IRF453 TA17435. IRF452 IRF453 IRF451 irf450

    IRF450

    Abstract: TA17435 mosfet IRF450 TB334
    Text: IRF450 Data Sheet March 1999 13A, 500V, 0.400 Ohm, N-Channel Power MOSFET • 13A, 500V Formerly developmental type TA17435. Ordering Information IRF450 PACKAGE TO-204AA 1827.3 Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,


    Original     		PDF IRF450 TA17435. O-204AA IRF450 TA17435 mosfet IRF450 TB334

    IRF450

    Abstract: mosfet IRF450 mosfet n channel
    Text: TECHNICAL DATA POWER MOSFET N CHANNEL Devices 13 AMPERE 500 VOLTS 0.4 Ω IRF450 • • • • REPETITIVE AVALANCHE RATINGS LOW RDS ON LOW DRIVE REQUIREMENT DYNAMIC dv/dt RATING ABSOLUTE MAXIMUM RATINGS (TC = 250C unless otherwise noted) Parameters / Test Conditions


    Original     		PDF IRF450 IRF450 mosfet IRF450 mosfet n channel

    IRF450

    Abstract: SHD218505
    Text: SENSITRON SEMICONDUCTOR SHD218505 TECHNICAL DATA DATA SHEET 1012, REV Formerly Part Number SHD2185/A/B HERMETIC POWER MOSFET N-CHANNEL FEATURES: • 500 Volt, 0.3 Ohm, 9.0A MOSFET • Low RDS on • Equivalent to IRF450 Series MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25°C UNLESS OTHERWISE SPECIFIED.


    Original     		PDF SHD218505 SHD2185/A/B IRF450 SHD218505

    Untitled

    Abstract: No abstract text available
    Text: PD - 90330F IRF450 JANTX2N6770 JANTXV2N6770 500V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRF450 BVDSS 500V RDS(on) 0.400Ω ID 12A The HEXFETtechnology is the key to International


    Original     		PDF 90330F IRF450 JANTX2N6770 JANTXV2N6770 O-204AA/AE) temper252-7105

    Untitled

    Abstract: No abstract text available
    Text: IRF450R Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)500 V(BR)GSS (V)20 I(D) Max. (A)13 I(DM) Max. (A) Pulsed I(D)8.1 @Temp (øC)100 IDM Max (@25øC Amb)52 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)125 Minimum Operating Temp (øC)-55õ


    Original     		PDF IRF450R

    Untitled

    Abstract: No abstract text available
    Text: PD-90330G IRF450 JANTX2N6770 JANTXV2N6770 500V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number BVDSS RDS(on) IRF450 500V ID 0.400Ω 12A The HEXFET ®technology is the key to International


    Original     		PDF PD-90330G O-204AA/AE) IRF450 JANTX2N6770 JANTXV2N6770 IRF450 --TO-204AA

    IRF450 equivalent

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR SHD218505 TECHNICAL DATA DATA SHEET 1012, REV Formerly Part Number SHD2185/A/B HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 500 Volt, 0.3 Ohm, 9.0A MOSFET œ Low RDS on œ Equivalent to IRF450 Series MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25•C UNLESS OTHERWISE SPECIFIED.


    Original     		PDF SHD2185/A/B SHD218505 IRF450 250mA IRF450 equivalent

    JANTX2N6770

    Abstract: irf4501 mosfet IRF450 IRF450 JANTXV2N6770
    Text: PD - 90330F IRF450 JANTX2N6770 JANTXV2N6770 500V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRF450 BVDSS 500V RDS(on) 0.400Ω ID 12A The HEXFETtechnology is the key to International


    Original     		PDF 90330F IRF450 JANTX2N6770 JANTXV2N6770 O-204AA/AE) stabil52-7105 JANTX2N6770 irf4501 mosfet IRF450 IRF450 JANTXV2N6770

    Untitled

    Abstract: No abstract text available
    Text: mi = ^ = llll IRF450 SEME LAB MECHANICAL DATA D im ensions in m m inches N-CHANNEL POWER MOSFET 39.95 (1.573) max. 30.40(1.197) 30.15(1.187) 17.15 (0.675)_ 16.64 (0.655) 500V V DSS ^D(cont) _ * 0 ? (0.161) 3.84 (0 .Ï5 Ï) dia. 2 pics. -JL o o a ; 2- •—


    OCR Scan     		PDF IRF450 300ms,

    IRF449

    Abstract: irf362 irf413 IRF352 IRF353 IRF360 IRF421 IRF430 IRF433 IRF441
    Text: - 25 2 - Mi m *± « % Vds Vg s or * Vd g % 1RF35! IRF353 IR !R IR IRF360 IRF362 IRF420 IRF421 IRF422 IRF423 IRF430 IRF431 IRF432 IRF433 IRF440 IRF441 IRF442 IRF443 IRF448 IRF449 IRF450 IRF451 IRF452 IRF453 IRF460 IRF462 IRF510 IR IR IR IR IR IR IR IR IR IR


    OCR Scan     		PDF Ta-25 IRF352 IRF353 IRF360 O-204AE IRF362 TQ-204AE IRF421 O-3150 O-204AA IRF449 irf362 irf413 IRF352 IRF353 IRF360 IRF421 IRF430 IRF433 IRF441

    IRF450 transistor

    Abstract: irf450 mosfet 452 IRF452 mosfet IRF450
    Text: MOTOROLA SEMICONDUCTOR IRF450 IRF451 IRF452 TECHNICAL DATA N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR Part Number V d SS rDS on >D IRF450 500 V 0.4 n 13 A IRF451 450 V 0.4 n 13 A IRF452 500 V 0.5 n 12 A T h e s e T M O S P o w e r FETs are d es igne d fo r high v o ltag e, high


    OCR Scan     		PDF IRF450 IRF451 IRF452 IRF452 IRF451. IRF450, IRF450 transistor mosfet 452 mosfet IRF450

    IRF450A

    Abstract: IRF450R IRF452R IRF 450 MOSFET I300 IRF451R IRF453R
    Text: Rugged Power MOSFETs_ IRF450R, IRF451R, IRF452R, IRF453R File Number 2008 Avalanche Energy Rated N-Channel Power MOSFETs N -C H A N N E L E N H A N C E M E N T M O D E 12A and 13A, 450V-500V rDs on = 0.4Q and 0.50 D Feature*: • Single pulse avalanche energy rated


    OCR Scan     		PDF IRF450R, IRF451R, IRF452R, IRF453R 50V-500V IRF452R IRF453R switchiRF452R, IRF450A IRF450R IRF 450 MOSFET I300 IRF451R

    350w schematic diagram motor control

    Abstract: IRF450
    Text: 3QE 7 f Z D • T'ïE'iEB? GDSTTbl 2 ■ ' T ' - ' 3 CH 3 S G S -T H O M S O N IR F 4 5 0 - 4 5 1 ti^D g^(Q [iL[l ir^©lD©i_ IR F 4 5 2 - 4 5 3 S: G S-THOMSÔN N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE VDSS ^DS(on) Id IRF450 500 V


    OCR Scan     		PDF IRF450 IRF451 IRF452 IRF453 100Vv SC-02Í 350w schematic diagram motor control

    IRF360

    Abstract: irf362 IRF448 IRF449 IRF352 IRF353 IRF421 IRF430 IRF433 IRF441
    Text: - 252 - Mi m *± « % Vds Vg s or * Vd g % 1RF35! IRF353 IR !R IR IRF360 IRF362 IRF420 IRF421 IRF422 IRF423 IRF430 IRF431 IRF432 IRF433 IRF440 IRF441 IRF442 IRF443 IRF448 IRF449 IRF450 IRF451 IRF452 IRF453 IRF460 IRF462 IRF510 IR IR IR IR IR IR IR IR IR IR


    OCR Scan     		PDF Ta-25 IRF352 IRF353 IRF360 O-204AE IRF362 TQ-204AE IRF421 O-3150 O-204AA IRF360 irf362 IRF448 IRF449 IRF352 IRF353 IRF421 IRF430 IRF433 IRF441

    IRF411

    Abstract: IRF449 1RF540 irf413 1RF620 1rf520 irf362 IRF352 IRF353 IRF421
    Text: - 252 - Mi m *± « % Vds Vg s or * Vd g % 1RF35! IRF353 IR !R IR IRF360 IRF362 IRF420 IRF421 IRF422 IRF423 IRF430 IRF431 IRF432 IRF433 IRF440 IRF441 IRF442 IRF443 IRF448 IRF449 IRF450 IRF451 IRF452 IRF453 IRF460 IRF462 IRF510 IR IR IR IR IR IR IR IR IR IR


    OCR Scan     		PDF Ta-25 IRF352 IRF353 IRF360 O-204AE IRF362 TQ-204AE IRF421 O-3150 O-204AA IRF411 IRF449 1RF540 irf413 1RF620 1rf520 irf362 IRF352 IRF353 IRF421

    IRF449

    Abstract: 1RF9130 1RF431 IRF460 irf9243 IRFAG52 2N6B04 irf420 IRF9141 2N6761
    Text: HERMETIC PACKAGE HEXFETs INTERNATIONAL RECTIFIER TO-3 Package INTERNATIONAL R ECTIFIER SbE D 4055455 OOlOSbS □ • I«R T - 3 ^ - 0 3 N-CHANNEL Types % V IRF451 IRF453 2N6769 IRF441 IRF443 1RF431 2N6761 IRF433 IRF421 IRF423 IRF460 IRF462 IRF450 2N6770 IRF452


    OCR Scan     		PDF IRF451 T0-204AA IRF453 2N6769 IRF441 IRF443 1RF431 2N6761 IRF433 IRF421 IRF449 1RF9130 1RF431 IRF460 irf9243 IRFAG52 2N6B04 irf420 IRF9141 2N6761

    IRF450

    Abstract: mosfet IRF450 th414 IRF452 IRF250 IRF251 IRF252 IRF253 IRF451 Z047
    Text: I I fi _ ' 7 9 6 4 1 4 2 S A M S U N G S E M I C O N D U C T O R INC . DL j v T b m H E 0 0 0 5 1 4 4 S | 98D 05 144_ N-CHANNEL POWER MOSFETS IRF450/451/452/453 FEATURES Low RDS on at high voltage Improved inductive ruggedness Excellent high voltage stability


    OCR Scan     		PDF 0D0S14M IRF450/451/452/453 D05144 IRF250 IRF251 IRF252 IRF253 IRF450 IRF451 IRF452 mosfet IRF450 th414 Z047

    IRF452

    Abstract: IRF450 IRF451 irf453
    Text: h a f r r is IRF450, IRF451, IRF452, IRF453 11A and 13A, 450V and 500V, 0.4 and 0.5 Ohm, N-Channel Power MOSFETs November 1997 Features Description • 11A and 13A, 450V and 500V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    OCR Scan     		PDF IRF450, IRF451, IRF452, IRF453 TA17435. RF452, IRF452 IRF450 IRF451 irf453

    RF432

    Abstract: IRF449 IRF460 IRFac32
    Text: International ID o H l f i û r [t S HEXFFT MOSFETs r ^ « e c im e r Hermetic Package 7Ü-3 N-Channel Part Number V q s Drain Source Voltage Volts IRF422 IRF420 /RF432 2N6762 IRF430 IRF442 IRF440 IRF449 IRF448 IRF452 IRF450 2N6770 IRF462 IRF460 500 IRFAC32


    OCR Scan     		PDF IRF422 IRF420 /RF432 2N6762 IRF430 IRF442 IRF440 IRF449 IRF448 IRF452 RF432 IRF460 IRFac32

    IRF450

    Abstract: IRF450 transistor
    Text: IRF450.451 P86FR2,R1 IFSMm-öffiS FUT 13 AMPERES 500, 450 VOLTS RDS(ON = 0.4 n FIELD EFFECT POWER TRANSISTOR This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­


    OCR Scan     		PDF

    irfp450

    Abstract: irf450 mosfet 452 mosfet IRF450 ir 451 451 MOSFET tr irfp450 irfp450 ir irfp450 mosfet irf450 switching
    Text: IRFP450/451/452/453 IRF450/451/452/453 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • Lower Ros ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area


    OCR Scan     		PDF IRFP450/451/452/453 IRF450/451/452/453 IRFP450/IRF450 IRFP451 /IRF451 IRFP452/IRF452 IRFP453/IRF453 IRFP450 IRF450 IRF451 mosfet 452 mosfet IRF450 ir 451 451 MOSFET tr irfp450 irfp450 ir irfp450 mosfet irf450 switching