IRF614 Search Results

IRF614

Contextual Info: IRF614, SiHF614 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 8.2 • Fast Switching Qgs (nC) 1.8 • Ease of Paralleling Qgd (nC) 4.5 • Simple Drive Requirements Configuration

Contextual Info: IRF614S A d van ced Power MOSFET FEATURES B V DSS - 250 V ^D S o n = 2 . 0 Q. ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology 00 c\i Q II ♦ Lower Input Capacitance A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 250V

IRF614

Contextual Info: $GYDQFHG 3RZHU 026 7 IRF614 FEATURES BVDSS = 250 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 2.0Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 2.8 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 250V

Contextual Info: SAMSUNG ELECTRONICS INC b?E D • 7 ^ b 4 m 2 GG17273 217 «SPIGK N-CHANNEL POWER MOSFETS IRF614/615 FEATURES • • • • • • • Lower R d s ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance

Contextual Info: IRF614S, SiHF614S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching

IRFS614B

Abstract: IRF614B
Contextual Info: IRF614B/IRFS614B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to

IRF614A

Contextual Info: IRF614A A dvanced Power MOSFET FEATURES B V DSS — 2 5 0 V ♦ Avalanche Rugged Technology ♦ Lower Input Capacitance _Q 00 evi ^DS on = II ♦ Rugged Gate Oxide Technology 2 .0 a A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|xA (Max.) @ V DS = 250V

MOSFET 200v 20A n.channel

Abstract: IRF614 TB334
Contextual Info: IRF614 2.0A, 250V, 2.0 Ohm, N-Channel Power MOSFET January 1998 Features Description • 2.0A, 250V • Linear Transfer Characteristics This is an N-Channel enhancement mode silicon gate power field effect transistor. It is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified

Contextual Info: IRF614A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ BV0SS = 250 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 m A Max. @ VDS= 250V

Contextual Info: IRF614S, SiHF614S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 250 RDS(on) () VGS = 10 V 2.0 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single D D2PAK (TO-263) • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount

Contextual Info: IRF614S, SiHF614S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V RDS(on) (Ω) • • • • • • • • 250 VGS = 10 V 2.0 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single D Surface Mount Available in Tape and Reel Dynamic dV/dt Rating

CI LA 4303

Abstract: LA 4301 irf614
Contextual Info: 2î H A R R IRF614 I S SEMICONDUCTOR N-Channel Power MOSFETs Avalanche Energy Rated M ay 1992 Package Features • 2.0A, 250V T0-220AB TOP VIEW • rDS ON = • Single Pulse Avalanche Energy Rated DRAIN (FLANGE) • SOA Is Power-Dlsslpation Limited u • Nanosecond Switching Speeds

Contextual Info: IRF614, SiHF614 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 8.2 • Fast Switching Qgs (nC) 1.8 • Ease of Paralleling Qgd (nC) 4.5 • Simple Drive Requirements

Contextual Info: IRF614 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)250 V(BR)GSS (V) I(D) Max. (A)2.7 I(DM) Max. (A) Pulsed I(D)1.7 @Temp (øC)100õ IDM Max (@25øC Amb)8.0 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)36 Minimum Operating Temp (øC)-55õ

Contextual Info: N-CHANNEL POWER MOSFETS IRF614 FEATURES • Low er R d s j o n • Improved inductive ruggedness • Fast switching tim es • Rugged polysilicon gate cell structure • Low er input ca p acita nce • Extended safe operating area • Improved high tem perature reliability

Contextual Info: $GYDQFHG 3RZHU 026 7 IRF614A FEATURES BVDSS = 250 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 2.0Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 2.8 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 250V

smd 42t

Contextual Info: PD-9.1003 International k R ectifier IRF614S HEXFET® Power MOSFET • • • • • • • Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements VDSS = 250V

Contextual Info: IRF614 HARRIS S E M I C O N D U C T O R 2.0A, 250V, 2.0 Ohm, N-Channel Power MOSFET January 1998 Description Features 2.0A, 250V Linear Transfer Characteristics This is an N-Channel enhancement mode silicon gate power field effect transistor. It is an advanced power MOSFET

Contextual Info: IRF614, SiHF614 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 8.2 • Fast Switching Qgs (nC) 1.8 • Ease of Paralleling Qgd (nC) 4.5 • Simple Drive Requirements

Contextual Info: IRF614S, SiHF614S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching

IRF614S

Contextual Info: IRF614S A dvanced Power MOSFET FEATURES BVDSS — ♦ Avalanche Rugged Technology ^D S o n = ♦ Lower Input Capacitance _Q ♦ Improved Gate Charge CO c\i II ♦ Rugged Gate Oxide Technology 250 V 2.0 a A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|xA (Max.) @ V DS = 250V

Contextual Info: IRF614S, SiHF614S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V RDS(on) (Ω) • • • • • • • • 250 VGS = 10 V 2.0 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single D Surface Mount Available in Tape and Reel Dynamic dV/dt Rating

Contextual Info: IRF614, SiHF614 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 8.2 • Fast Switching Qgs (nC) 1.8 • Ease of Paralleling Qgd (nC) 4.5 • Simple Drive Requirements Configuration

IRF614B

Contextual Info: IRF614B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching