IRF630 DATASHEET Search Results

IRF630

Abstract: mosfet morocco IRF630FP IRF630 p
Contextual Info: IRF630 IRF630FP  N - CHANNEL 200V - 0.35Ω - 9A - TO-220/FP MESH OVERLAY MOSFET TYPE IRF630 IRF630F P • ■ ■ ■ V DSS R DS on ID 200 V 200 V < 0.40 Ω < 0.40 Ω 9 A 9 A TYPICAL RDS(on) = 0.35 Ω EXTREMELY HIGH dV/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES

IRF630

Abstract: IRF630FP
Contextual Info: IRF630 IRF630FP  N - CHANNEL 200V - 0.35Ω - 9A - TO-220/FP MESH OVERLAY MOSFET TYPE IRF630 IRF630F P • ■ ■ ■ V DSS R DS on ID 200 V 200 V < 0.40 Ω < 0.40 Ω 9 A 9 A TYPICAL RDS(on) = 0.35 Ω EXTREMELY HIGH dV/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES

IRF630

Contextual Info: IRF630, SiHF630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) () VGS = 10 V • Repetitive Avalanche Rated 0.40 Qg (Max.) (nC) 43 • Fast Switching Qgs (nC) 7.0 • Ease of Paralleling 23 • Simple Drive Requirements

IRF630pbf

Contextual Info: IRF630, SiHF630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) () VGS = 10 V • Repetitive Avalanche Rated 0.40 Qg (Max.) (nC) 43 • Fast Switching Qgs (nC) 7.0 • Ease of Paralleling 23 • Simple Drive Requirements

Contextual Info: <zz>£tni-C.onauctoi J loaucti, L/nc, LJ TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. N-Channel MOSFET Transistor IRF630 0(2) DESCRIPTION • Drain Current -ID=9A@ TC=25°C • Drain Source Voltage-

IRF632 datasheet

Abstract: IRF630 datasheet IRF630 IRF632 RF1S630SM RF1S630SM9A TB334 IRF630 mosfet IRF630 Fairchild
Contextual Info: IRF630, RF1S630SM Data Sheet 9A, 200V, 0.400 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode

IRF630PBF

Contextual Info: IRF630, SiHF630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) () VGS = 10 V • Repetitive Avalanche Rated 0.40 Qg (Max.) (nC) 43 • Fast Switching Qgs (nC) 7.0 • Ease of Paralleling 23 • Simple Drive Requirements

Contextual Info: IRF630, SiHF630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) () VGS = 10 V • Repetitive Avalanche Rated 0.40 Qg (Max.) (nC) 43 • Fast Switching Qgs (nC) 7.0 • Ease of Paralleling 23 • Simple Drive Requirements

Contextual Info: IRF630, SiHF630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) () VGS = 10 V • Repetitive Avalanche Rated 0.40 Qg (Max.) (nC) 43 • Fast Switching Qgs (nC) 7.0 • Ease of Paralleling 23 • Simple Drive Requirements

Contextual Info: IRF630, SiHF630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) () VGS = 10 V • Repetitive Avalanche Rated 0.40 Qg (Max.) (nC) 43 • Fast Switching Qgs (nC) 7.0 • Ease of Paralleling 23 • Simple Drive Requirements

Contextual Info: IRF630, SiHF630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) () VGS = 10 V • Repetitive Avalanche Rated 0.40 Qg (Max.) (nC) 43 • Fast Switching Qgs (nC) 7.0 • Ease of Paralleling 23 • Simple Drive Requirements

Contextual Info: IRF630, SiHF630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) () VGS = 10 V • Repetitive Avalanche Rated 0.40 Qg (Max.) (nC) 43 • Fast Switching Qgs (nC) 7.0 • Ease of Paralleling 23 • Simple Drive Requirements

Contextual Info: IRF630 IRF630FP N - CHANNEL 200V - 0.35Î2 - 9A - TO-220/FP MESH OVERLAY MOSFET TYPE V IR F 630 IR F 6 3 0 F P • . . . dss 200 V 200 V R D S o n Id < 0 .4 0 Q. < 0 .4 0 Q. 9 A 9 A TYPICAL RDS(on) = 0.35 EXTREMELY HIGHdV/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES

SEC irf630

Contextual Info: J.E.IIS.U ^E.ml-L.onaucko'i , One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 U.S.A. IRF630,631 D84DN2,M2 9.0 AMPERES 200,150 VOLTS "DS(ON) = 0.4 n N-CHANNEL [RUT CASE STYLE TO-220AB DIMENSIONS ARE IN INCHES AND (MILLIMETERS)

IRF630B_FP001

Abstract: IRF630 MOTOR CONTROL CIRCUIT IRF630B-FP001 IRF630B IRF630A ASM 630B IRF630 Fairchild
Contextual Info: IRF630B/IRFS630B IRF630B/IRFS630B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to

transistor 2N2222 smt

Abstract: 200v 5A mosfet 4n29 optocoupler Bill Andreycak 1K 1/4W Resistor 2N2222 circuit 2N2222 NPN Transistor features UNITRODE product and applications handbook transistor 2N2222 smt npn Unitrode Semiconductor 1n4148
Contextual Info: DN-67 Design Note UCC3913 Electronic Circuit Breaker for Negative Voltage Applications Evaluation Kit List of Materials for a -48V/1A Test Circuit by Bill Andreycak Many battery powered and Telecommunications power supplies use some form of protection to prevent high currents from flowing during a short

2N2222 TRANSISTOR TOSHIBA

Abstract: 99127 SLUU077 smd2512 toshiba power supply SMD-2512 4n29 optocoupler Unitrode Semiconductor 1n4148 Bill Andreycak 2N2222 circuit
Contextual Info: DN-67 Design Note UCC3913 or UCC3921 Hot Swap Power Manager for Negative Voltage Applications Evaluation Kit, Schematic, and List of Materials for a –48V/1A Test Circuit by Bill Andreycak Many battery powered and telecommunications power supplies use some form of protection to prevent high currents from flowing during a short circuit or overload condition. This function is often

TRANSISTOR REPLACEMENT GUIDE

Abstract: SMD-2512 texas instruments transistor manual smd2512 transistor 99127 48VDC POWER SUPPLY UCC3921 SLUS274 HOT SWAP UDG-99127
Contextual Info: Application Report SLUU076A - August 2000 UCC3913 or UCC3921 Hot Swap Power Manager Evaluation Board Power Management Products 1 Evaluation Board Operation This user’s guide highlights the UCC3913/ UCC3921 evaluation board in a typical –48-Vdc, 1-A application circuit.

2n2222 texas instruments mosfet

Abstract: transistor 2N2222 smt 2N2222 Replacement 2n2222 npn Unitrode Semiconductor 1n4148 Unitrode DN-67 1N4148 DN-67 UCC3831 UCC3913
Contextual Info: DN-67 Design Note UCC3913 or UCC3921 Hot Swap Power Manager for Negative Voltage Applications Evaluation Kit, Schematic, and List of Materials for a –48V/1A Test Circuit by Bill Andreycak Many battery powered and telecommunications power supplies use some form of protection to prevent high currents from flowing during a short circuit or overload condition. This function is often

TRANSISTOR REPLACEMENT GUIDE

Abstract: SMD2512 UDG-99127 UCC3921 1N4148 IRF630 IRF630S UCC3913 SLUS274 texas instruments transistor manual
Contextual Info: Application Report SLUU076A - August 2000 UCC3913 or UCC3921 Hot Swap Power Manager Evaluation Board Power Management Products 1 Evaluation Board Operation This user’s guide highlights the UCC3913/ UCC3921 evaluation board in a typical –48-Vdc, 1-A application circuit.

IRF722P

Abstract: IRF732P SGSP3055 IRF730P 1rfp450 IRF510 SGSP312 IRF540FI irf522p MTP20N10
Contextual Info: CROSS REFERENCE SGS-THOMSON NEAREST PAGE INDUSTRY STANDARD SGS-THOMSON 2SK295 2SK296 2SK308 2SK310 2SK311 SGSP351 IRF723 IRF142 IRF722 IRF833 499 307 261 307 331 BUZ11A BUZ11FI BUZ11P BUZ11S2 BUZ11S2FI BUZ11A BUZ11FI BUZ11FI BUZ11S2 BUZ11S2FI 2SK312 2SK313

TP8N10

Abstract: th15n20 TH7N50 TP4N10 TP10N05 IRFP350FI TP5N35 tp5n40 TP4N45 TP3N40
Contextual Info: CROSS REFERENCE INDUSTRY STANDARD SGS-THOMSON NEAREST PAGE INDUSTRY STANDARD SGS-THOMSON 2SK295 2SK296 2SK308 2SK310 2SK311 SGSP351 IRF723 IRF142 IRF722 IRF833 499 307 261 307 331 BUZ11A BUZ11FI BUZ11P BUZ11S2 BUZ11S2FI BUZ11A BUZ11FI BUZ11FI BUZ11S2 BUZ11S2FI

IRFBE30 equivalent

Abstract: irf9640 REPLACEMENT GUIDE IRGKI200F06 IRGP440U replacement IRF3205 smd IRGBC20FD2 IRFK3D450 IRFBg30 equivalent IRGNIN150M06 irc540
Contextual Info: Electronic Switches Catalog of Available Documents Revised 8/27/98 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100  HEXFET Power MOSFETs Description Gen Package Document # Pages Date 11 10 12 7 May-97 May-97 91615 91650 91651 90454 90592 90565 90566

IRF734

Abstract: irf9640 REPLACEMENT GUIDE IRF3205 smd IRGTI165F06 irg4pc50fd *g4pc50w IRGKI115U06 IRGTI200F06 *gBC20f IRLIZ34
Contextual Info: Electronic Switches Catalog of Available Documents Revised 5/11/99 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100 HEXFET Power MOSFETs Description Gen Package Document # Pages Date 11 10 12 7 May-97 May-97 91615 91650 91651 90454 90592 90565 90566