IRF7103 Search Results
IRF7103 Price and Stock
Rochester Electronics LLC AUIRF7103QTRMOSFET 2N-CH 50V 3A 8SOIC |
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AUIRF7103QTR | Bulk | 57,728 | 325 |
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Infineon Technologies AG IRF7103TRPBFMOSFET 2N-CH 50V 3A 8SO |
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IRF7103TRPBF | Cut Tape | 13,786 | 1 |
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IRF7103TRPBF | Reel | 152,000 | 8 Weeks | 4,000 |
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IRF7103TRPBF | 39,938 | 125 |
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IRF7103TRPBF | Reel | 16,000 | 4,000 |
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IRF7103TRPBF | Bulk | 20 |
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IRF7103TRPBF | 11 | 8 |
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IRF7103TRPBF | 8 |
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IRF7103TRPBF | 45,000 | 1 |
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IRF7103TRPBF | 863 | 1 |
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IRF7103TRPBF | 1,202 |
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IRF7103TRPBF | 800 |
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IRF7103TRPBF | Cut Tape | 39,938 | 0 Weeks, 1 Days | 5 |
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IRF7103TRPBF | 19 Weeks | 4,000 |
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IRF7103TRPBF | 92,910 |
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Infineon Technologies AG IRF7103TRPBFXTMA1MOSFET 2N-CH 50V 3A 8DSO-902 |
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IRF7103TRPBFXTMA1 | Digi-Reel | 3,031 | 1 |
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IRF7103TRPBFXTMA1 | Reel | 8 Weeks | 4,000 |
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IRF7103TRPBFXTMA1 | 1,342 |
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IRF7103TRPBFXTMA1 | 4,000 | 4,000 |
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IRF7103TRPBFXTMA1 | Cut Tape | 3,250 | 1 |
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IRF7103TRPBFXTMA1 | 36,000 | 19 Weeks | 4,000 |
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IRF7103TRPBFXTMA1 | 28,000 | 1 |
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UMW IRF7103TRMOSFET 2N-CH 50V 3A 8SOP |
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IRF7103TR | Cut Tape | 2,994 | 1 |
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Infineon Technologies AG IRF7103QMOSFET 2N-CH 50V 3A 8SO |
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IRF7103Q | Tube | 760 |
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IRF7103 Datasheets (16)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | PDF Size | Page count | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF7103 | International Rectifier | Power MOSFET(Vdss=50V, Rds(on)=0.130ohm, Id=3.0A) | Original | 170.53KB | 9 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF7103 |
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Power MOSFETs Cross Reference Guide | Original | 165.78KB | 67 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF7103 | International Rectifier | Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, Dual N-Channel, Logic Level, 50V, 3A, Pkg Style S0-8 | Scan | 73.98KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF7103 | Unknown | Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. | Historical | 38.34KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF7103IPBF | International Rectifier | Original | 265.77KB | 9 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF7103(N) | International Rectifier | 50V Single DUAL-Channel HEXFET Power MOSFET in a SO-8 package | Original | 170.53KB | 9 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF7103PBF | International Rectifier | Original | 170.53KB | 9 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF7103Q | International Rectifier | HEXFET Power Mosfet | Original | 170.65KB | 10 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF7103Q(N) | International Rectifier | 50V Single DUAL-Channel HEXFET Power MOSFET in a SO-8 package | Original | 170.55KB | 10 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF7103QPBF | International Rectifier | AUTOMOTIVE MOSFET HEXFET Power MOSFET | Original | 265.84KB | 10 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF7103QTR | International Rectifier | N-channel power MOSFET for anti-lock braking systems applications, 50V, 3A | Original | 170.55KB | 10 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF7103QTRPBF | International Rectifier | 50V Dual N-Channel HEXFET Power MOSFET in a SO-8 package - Q101 Qualified; Similar to IRF7103Q with Lead-Free Packaging shipped on Tape and Reel | Original | 261.06KB | 10 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF7103TR | International Rectifier | 50V Dual N-Channel HEXFET Power MOSFET in a SO-8 package | Original | 170.53KB | 9 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF7103TR | Unknown | Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. | Historical | 38.34KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF7103TRPBF | International Rectifier | Original | 170.53KB | 9 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF7103UPBF | International Rectifier | Original | 291.75KB | 9 |
IRF7103 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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IRF7103
Abstract: MS-012AA 9109
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Original |
1095B IRF7103 IRF7103 MS-012AA 9109 | |
EIA-541
Abstract: IRF7101
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Original |
-95037A IRF7103PbF EIA-481 EIA-541. EIA-541 IRF7101 | |
Contextual Info: PD - 93944 IRF7103Q AUTOMOTIVE MOSFET Typical Applications ● ● ● HEXFET Power MOSFET Anti-lock Braking Systems ABS Electronic Fuel Injection Power Doors, Windows & Seats VDSS Benefits ● ● ● ● ● ● ● Ω) RDS(on) max (mΩ) ID 130@VGS = 10V |
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IRF7103Q | |
50V Dual N-Channel HEXFET Power MOSFET in a SO-8Contextual Info: PD - 96101A IRF7103QPbF AUTOMOTIVE MOSFET Typical Applications VDSS l Anti-lock Braking Systems ABS l Electronic Fuel Injection l Power Doors, Windows & Seats HEXFET Power MOSFET RDS(on) max (mW) ID 130@VGS = 10V 3.0A 200@VGS = 4.5V 1.5A 50V Benefits l |
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6101A IRF7103QPbF EIA-481 EIA-541. 50V Dual N-Channel HEXFET Power MOSFET in a SO-8 | |
Contextual Info: PD - 96101 IRF7103QPbF AUTOMOTIVE MOSFET Typical Applications l l l HEXFET Power MOSFET Anti-lock Braking Systems ABS Electronic Fuel Injection Power Doors, Windows & Seats VDSS Benefits l l l l l l l Advanced Process Technology Dual N-Channel MOSFET Ultra Low On-Resistance |
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IRF7103QPbF EIA-481 EIA-541. | |
Contextual Info: PD - 96101A IRF7103QPbF AUTOMOTIVE MOSFET Typical Applications VDSS l Anti-lock Braking Systems ABS l Electronic Fuel Injection l Power Doors, Windows & Seats HEXFET Power MOSFET RDS(on) max (mW) ID 130@VGS = 10V 3.0A 200@VGS = 4.5V 1.5A 50V Benefits l |
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6101A IRF7103QPbF EIA-481 EIA-541. | |
IRF7103Q
Abstract: 50V Dual N-Channel HEXFET Power MOSFET in a SO-8 Fuel injection
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3944A IRF7103Q IRF7103Q 50V Dual N-Channel HEXFET Power MOSFET in a SO-8 Fuel injection | |
Contextual Info: PD-96067C IRF7103UPbF l l l l l l l l Adavanced Process Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Lead-Free HEXFET Power MOSFET S1 G1 S2 G2 1 8 D1 2 7 D1 3 6 D2 4 5 |
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PD-96067C IRF7103UPbF solde461 EIA-481 EIA-541. | |
Contextual Info: IRF7103PbF-1 HEXFET Power MOSFET VDS RDS on max (@VGS = 10V) RDS(on) max (@VGS = 4.5V) Qg (typical) ID (@TA = 25°C) 50 V 0.13 Ω 0.20 Ω 12 nC 3.0 A S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 SO-8 Top View Features Benefits Industry-standard pinout SO-8 Package |
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IRF7103PbF-1 TD-020D | |
Contextual Info: IRF7103 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)50 V(BR)GSS (V)20 I(D) Max. (A)3.0 I(DM) Max. (A) Pulsed I(D)2.3 @Temp (øC)70# IDM Max (@25øC Amb)10 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)2.0# Minimum Operating Temp (øC)-55 |
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IRF7103 Junc-Case62 | |
IRF7103QContextual Info: PD - 93944C IRF7103Q AUTOMOTIVE MOSFET Typical Applications ● ● ● HEXFET Power MOSFET Anti-lock Braking Systems ABS Electronic Fuel Injection Power Doors, Windows & Seats VDSS Benefits ● ● ● ● ● ● Ω) RDS(on) max (mΩ) ID 130@VGS = 10V |
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93944C IRF7103Q IRF7103Q | |
Contextual Info: PD -96085A IRF7103IPbF l l l l l l l l Adavanced Process Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Lead-Free HEXFET Power MOSFET S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 |
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-96085A IRF7103IPbF EIA-481 EIA-541. | |
MARKING C53Contextual Info: PD - 9.1095B International I O R Rectifier IRF7103 HEXFET Power MOSFET • Advanced Process Technology • Ultra Low On-Resistance • Dual N-Channel MOSFET • Surface Mount • Available in Tape and Reel • Dynamic dv/dt Rating • Fast Switching Voss = 50V |
OCR Scan |
IRF7103 MARKING C53 | |
Contextual Info: PD - 96101B IRF7103QPbF AUTOMOTIVE MOSFET Typical Applications VDSS l Anti-lock Braking Systems ABS l Electronic Fuel Injection l Power Doors, Windows & Seats HEXFET Power MOSFET RDS(on) max (mW) ID 130@VGS = 10V 3.0A 200@VGS = 4.5V 1.5A 50V Benefits l |
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96101B IRF7103QPbF EIA-481 EIA-541. | |
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Contextual Info: PD -96085A IRF7103IPbF HEXFET Power MOSFET l l l l l l l l Adavanced Process Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Lead-Free S1 G1 S2 G2 1 8 D1 2 7 D1 3 6 D2 4 |
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-96085A IRF7103IPbF EIA-481 EIA-541. | |
IRF7342
Abstract: IRF7205 SI9933ADY IRF7103 IRF7104 SI4948EY SI4982DY SI9407AEY SI9939DY SI9942DY
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OCR Scan |
flMana30H IRF7104 SI9953DY SI9948AEY SI4982DY IRF7103 SI9942DY SI4948EY SI9933ADY IRF7342 IRF7205 SI9407AEY SI9939DY | |
Contextual Info: PD -96085 IRF7103IPbF l l l l l l l l Adavanced Process Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Lead-Free HEXFET Power MOSFET S1 G1 S2 G2 1 8 D1 2 7 D1 3 6 D2 4 5 |
Original |
IRF7103IPbF EIA-481 EIA-541. | |
B20F
Abstract: DIODE MARKING 541
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Original |
-95037B IRF7103PbF EIA-481 EIA-541. B20F DIODE MARKING 541 | |
IRF7103
Abstract: F7101 MS-012AA IRF7413A
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Original |
1095B IRF7103 5M-1982. MS-012AA. F7101 IRF7103 F7101 MS-012AA IRF7413A | |
EIA-541Contextual Info: PD-96067B IRF7103UPbF l l l l l l l l Adavanced Process Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Lead-Free HEXFET Power MOSFET S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 |
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PD-96067B IRF7103UPbF EIA-481 EIA-541. EIA-541 | |
Contextual Info: PD-96067C IRF7103UPbF l l l l l l l l Adavanced Process Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Lead-Free HEXFET Power MOSFET S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 |
Original |
PD-96067C IRF7103UPbF wave461 EIA-481 EIA-541. | |
Contextual Info: PD - 96101C IRF7103QPbF HEXFET Power MOSFET Benefits l l l l l l Advanced Process Technology Dual N-Channel MOSFET Ultra Low On-Resistance 175°C Operating Temperature Repetitive Avalanche Allowed up to Tjmax Lead-Free Description This HEXFET® Power MOSFET's in a Dual SO-8 package |
Original |
96101C IRF7103QPbF EIA-481 EIA-541. | |
IRF7103QContextual Info: PD - 93944D IRF7103Q AUTOMOTIVE MOSFET Typical Applications HEXFET Power MOSFET l Anti-lock Braking Systems ABS l Electronic Fuel Injection l Power Doors, Windows & Seats VDSS Benefits 50V l l l l l l Advanced Process Technology Dual N-Channel MOSFET Ultra Low On-Resistance |
Original |
93944D IRF7103Q EIA-481 EIA-541. IRF7103Q | |
mosfet cross reference
Abstract: Power MOSFET Cross Reference Guide 2SK2146 Cross Reference power MOSFET SUP60NO6-18 MOSFET TOSHIBA 2SK irf510 Motorola SUP70NO6 STP16NEO6 IRF540 substitution
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Original |