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    3fc relay

    Abstract: diode 1.5 ke 36 ca
    Text: MOTOROLA SC XSTRS/R I F 1 4 E D H fc,3fc,72S4 0 0 0 ^ = 1 7 MOTOROLA □ I •l SEMICONDUCTOR TECHNICAL DATA IRF710 N-CHANNEL ENHANCEM ENT-M O DE SILICON GATE T M O S POWER FIELD EFFECT TRANSISTOR Part Number Vd s s IRF71Q 400 V rosion 3.6 n Th is T M O S Power F E T is designed for high voltage, high speed


    OCR Scan     		PDF IRF710 IRF71Q 3fc relay diode 1.5 ke 36 ca

    24v rectifier j8

    Abstract: irp740 IRF71Q
    Text: International XQR Rectifier PO 9 .1 5 6 2 IRF9410 PRELIMINARY HEXFET Power M O S FET • • • • • • Generation V Technology Ultra Low On-Resistance N-Channel MOSFET Surface Mount Very Low Gate Charge and Switching Losses Fully Avalanche Rated V pss = 30V


    OCR Scan     		PDF IRF9410 24v rectifier j8 irp740 IRF71Q

    1rf634

    Abstract: IRFZ25 international rectifier 9509 9374 9313 irf635 IRF71Q 9327
    Text: IO R PLASTIC PACKAGE HEXFETs INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER 5bE D 4 Ô SS 4S E O G I D S S S 3 TO-220 Package '- • N-CHANNEL Types Vos V fifl OU Po pulsed max Ü A A W 210 190 120 100 60 56 40 33 150 150 90 90 60 60 36 36 28.0 25.0 14.0


    OCR Scan     		PDF O-220 IRFZ44 IRFZ45 IRFZ34 IRFZ35 IRFZ24 IRFZ25 IRFZ14 IRFZ15 IRF541 1rf634 international rectifier 9509 9374 9313 irf635 IRF71Q 9327