IRF72 Search Results

smd diode 46A

Abstract: equivalent smd mosfet IRF7205 IC MOSFET QG KRF7205 ld smd transistor smd mosfet
Contextual Info: MOSFET IC SMD Type HEXFET Power MOSFET KRF7205 IRF7205 Features Adavanced Process Technology Ultra Low On-Resistance P-Channel MOSFET Surface Mount Dynamic dv/dt Rating Fast Switching Absolute Maximum Ratings Ta = 25 Symbol Rating Continuous Drain Current, VGS @ 10V @ TA = 25

IRF7205

Abstract: 1104B MS-012AA
Contextual Info: PD - 9.1104B IRF7205 HEXFET Power MOSFET Adavanced Process Technology Ultra Low On-Resistance l P-Channel MOSFET l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description l l A D S 1 8 S 2 7 D S 3 6 D G 4 5 D VDSS = -30V

Contextual Info: IRF720, SiHF720 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 400 V RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 20 • Fast Switching Qgs (nC) 3.3 • Ease of Paralleling 11 • Simple Drive Requirements Qgd (nC)

IRF7207

Contextual Info: PD - 91879A IRF7207 HEXFET Power MOSFET l l l l l l Generation 5 Technology P-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching A D S 1 8 S 2 7 D S 3 6 D G 4 5 D VDSS = -20V RDS on = 0.06Ω T op V ie w Description

IRF7210

Contextual Info: PD- 91844A IRF7210 HEXFET Power MOSFET l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel A D S 1 8 S 2 7 D S 3 6 D G 4 5 D VDSS = -12V RDS on = 0.007Ω T op V ie w Description These P-Channel MOSFETs from International Rectifier

IRF720B

Abstract: MOSFET 400V TO-220
Contextual Info: IRF720B 400V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching

IRF720S

Abstract: SiHF720S SiHF720S-E3
Contextual Info: IRF720S, SiHF720S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 400 RDS(on) (Ω) VGS = 10 V 1.8 Qg (Max.) (nC) 20 Qgs (nC) 3.3 Qgd (nC) 11 Configuration Single DESCRIPTION D Third generation Power MOSFETs from Vishay provide the

AN609

Abstract: IRF720S SiHF720S
Contextual Info: IRF720S_RC, SiHF720S_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,

Contextual Info: IRF720A Advanced Power MOSFET FEATURES BVDSS - 400 V ♦ Avalanche Rugged Technology CO CO o ♦ Lower Input Capacitance II ^ D S o n = ♦ Rugged Gate Oxide Technology 1 .8 Î2 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 400V

IRF722

Abstract: IRF723
Contextual Info: [P3MÌfiì°[ ffiQ)§> FUT IRF722,723 2.5 AMPERES 400, 350 VOLTS Rd S ON) = 2.5 n FIELD EFFECT POWER TRANSISTOR This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­

Contextual Info: International I1*”*!Rectifier PD 9.1103A IRF7204 preuminary HEXFET Power MOSFET • • • • • • • Advanced Process Technology Ultra Low On-Resistance P-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching

Contextual Info: IRF720 Semiconductor July 1999 Data Sheet 3.3A, 400V, 1.800 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

IRF720

Abstract: TA17404 TB334
Contextual Info: IRF720 Data Sheet January 2002 3.3A, 400V, 1.800 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of

Contextual Info: IRF720, SiHF720 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 400 V RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 20 • Fast Switching Qgs (nC) 3.3 • Ease of Paralleling 11 • Simple Drive Requirements Qgd (nC) Configuration

Contextual Info: IRF720, SiHF720 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt rating 400 V RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 20 • Fast switching Qgs (nC) 3.3 • Ease of paralleling 11 • Simple drive requirements

Contextual Info: PD - 95294 IRF7241PbF HEXFET Power MOSFET ● VDSS RDS on max (mW) ID ● -40V 41@VGS = -10V 70@VGS = -4.5V -6.2A -5.0A Trench Technology Ultra Low On-Resistance ● P-Channel MOSFET ● Available in Tape & Reel ● Lead-Free New trench HEXFET® Power MOSFETs from

Contextual Info: PD- 91844B IRF7210 HEXFET Power MOSFET l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel S S S G A D 1 8 2 7 D 3 6 D 4 5 D VDSS = -12V RDS on = 0.007Ω Top View Description These P-Channel MOSFETs from International Rectifier

IRF7220

Contextual Info: PD- 91850B IRF7220 HEXFET Power MOSFET l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel A D 1 8 S 2 7 D S 3 6 D 4 5 D S G VDSS = -14V RDS on = 0.012W T o p V ie w Description These P-Channel MOSFETs from International Rectifier

IRF7201PBF

Contextual Info: PD- 95022 IRF7201PbF l l l l l l l l Generation V Technology Ultra Low On-Resistance N-Channel MOSFET Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Lead-Free Description HEXFET Power MOSFET A A D S 1 8 S 2 7 D S 3 6 D G 4 5 D

IRF722

Abstract: IRF720 IRF7221
Contextual Info: iH A R R is IRF720, IRF721, IRF722, IRF723 2.8A and 3.3A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 2.8 A and 3.3A, 350V and 400V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

Contextual Info: IRF720S, SiHF720S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching

IRF720

Abstract: TA17404 TB334
Contextual Info: IRF720 Data Sheet July 1999 3.3A, 400V, 1.800 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of

IRF7205

Contextual Info: PD - 9.1104B International IGR Rectifier IRF7205 HEXFET Power MOSFET • Advanced Process Technology • Ultra Low On-Resistance • P-Channel MOSFET • Surface Mount • Available in Tape and Reel • Dynamic dv/dt Rating • Fast Switching VDSS = -30V

IRF7240

Abstract: MS-012AA 30V 10.5A p-channel MOSFET 65110A
Contextual Info: PD- 93916 IRF7240 HEXFET Power MOSFET l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon