IRF740 IR Search Results

irf740

Abstract: power MOSFET IRF740 irf740 mosfet irf740 application IRF740 400V 10A
Contextual Info: IRF740 N-channel 400V - 0.46Ω - 10A TO-220 PowerMESH II Power MOSFET General features Type VDSS @Tjmax RDS(on) ID IRF740 400V <0.55Ω 10A • Exceptional dv/dt capability ■ 100% avalanche tested ■ Low gate charge ■ Very low intrinsic capacitances

IRF7405

Abstract: irf740 irf740 mosfet power MOSFET IRF740 IRF740 application TO-220 DATASHEET IRF740 transistor equivalent irf740 JESD97
Contextual Info: IRF740 N-channel 400V - 0.46Ω - 10A TO-220 PowerMESH II Power MOSFET General features Type VDSS @Tjmax RDS(on) ID IRF740 400V <0.55Ω 10A • Exceptional dv/dt capability ■ 100% avalanche tested ■ Low gate charge ■ Very low intrinsic capacitances

IRF740

Abstract: IRF740FI transistor equivalent irf740 irf740 DATA SHEET
Contextual Info: IRF740 IRF740FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRF740 IRF740FI • ■ ■ ■ V DSS R DS on ID 400 V 400 V < 0.55 Ω < 0.55 Ω 10 A 5.5 A TYPICAL RDS(on) = 0.42 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC

IRF740

Abstract: irf740 mosfet irf740n power MOSFET IRF740 transistor equivalent irf740
Contextual Info: IRF740  N - CHANNEL 400V - 0.48 Ω - 10 A - TO-220 PowerMESH MOSFET TYPE IRF740 • ■ ■ ■ ■ V DSS R DS on ID 400 V < 0.55 Ω 10 A TYPICAL RDS(on) = 0.48 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES

irf740

Abstract: irf740 mosfet 53A2
Contextual Info: IRF740 N-CHANNEL 400V - 0.46Ω - 10A TO-220 PowerMESH II MOSFET TYPE IRF740 • ■ ■ ■ ■ VDSS RDS on ID 400 V < 0.55 Ω 10 A TYPICAL RDS(on) = 0.46Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE VERY LOW INTRINSIC CAPACITANCES

IRF740

Contextual Info: IRF740 N-CHANNEL 400V - 0.46Ω - 10A TO-220 PowerMESH II MOSFET TYPE IRF740 • ■ ■ ■ ■ VDSS RDS on ID 400 V < 0.55 Ω 10 A TYPICAL RDS(on) = 0.46Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE VERY LOW INTRINSIC CAPACITANCES

IRF740

Abstract: IRF740FI
Contextual Info: IRF740 IRF740FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRF740 IRF740FI • ■ ■ ■ V DSS R DS on ID 400 V 400 V < 0.55 Ω < 0.55 Ω 10 A 5.5 A TYPICAL RDS(on) = 0.42 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC

IRF740

Abstract: irf740n power MOSFET IRF740 irf740 mosfet MOSFET IRF740
Contextual Info: IRF740 N - CHANNEL 400V - 0.48 Ω - 10 A - TO-220 PowerMESH MOSFET TYPE IRF740 • ■ ■ ■ ■ V DSS R DS on ID 400 V < 0.55 Ω 10 A TYPICAL RDS(on) = 0.48 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES

mosfet 1RF740

Abstract: 1rf740 IRF740 IRF741 irf740 mosfet IRF742 power MOSFET IRF740 IRF743
Contextual Info: -— - Standard Power MOSFETs File Number 2311 IRF740, IRF741, IRF742, IRF743 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors

MOSFET IRF740 as switch

Abstract: IRF740 irf740 mosfet power MOSFET IRF740 transistor equivalent irf740
Contextual Info: DC COMPONENTS CO., LTD. IRF740 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF N-CHANNEL POWER MOSFET VDSS = 400 Volts RDS on = 0.55 Ohm ID = 10 Amperes Features * Repetitive Avalanche Rated * Fast Switching * Ease of Paralleling * Simple Drive Requirements

irf740 mosfet

Abstract: power MOSFET IRF740 IRF740 transistor equivalent irf740 CIRF740
Contextual Info: IRF740 ! POWER MOSFET GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination ‹ Robust High Voltage Termination scheme to provide enhanced voltage-blocking capability ‹ Avalanche Energy Specified without degrading performance over time. In addition, this

SSH6N80

Abstract: rfp60n06 IRF3205 IR BUK417-500AE SFP70N03 BUZ91A 2SK2717 STMicroelectronics BUZ22 IXFH13N50
Contextual Info: Sales type BUZ10 BUZ11 BUZ11A BUZ71 BUZ71A BUZ72A BUZ80A IRF520 IRF530 IRF540 IRF620 IRF630 IRF640 IRF730 IRF740 IRF820 IRF830 IRF840 IRFBC30 IRFBC40 IRFZ40 MTP3055E STB10NA40 STB10NB20 STB10NB50 STB11NB40 STB15N25 STB16NB25 STB18N20 STB19NB20 STB30N10 STB36NE03L

Contextual Info: IRF740 Semiconductor Data Sheet July 1999 10A, 400V, 0.550 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

LG diode 831

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA IRF740 N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR This TM O S Power FET is designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers.

Contextual Info: IRF740, SiHF740 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 400 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 63 • Fast Switching Qgs (nC) 9.0 • Ease of Paralleling 32 • Simple Drive Requirements Qgd (nC) Configuration

IRF740

Contextual Info: IRF740, SiHF740 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 400 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 63 • Fast Switching Qgs (nC) 9.0 • Ease of Paralleling 32 • Simple Drive Requirements Qgd (nC) Configuration

Contextual Info: IRF740/741/742/743 IRFP340/341/342/343 SAMSUNG ELECTRONICS INC N-CHANNEL POWER MOSFETS SÎ16K b?E D FEATURES • • • • • • • Lower Rds on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance

IRF740PBF

Abstract: IRF740 irf740 mosfet SiHF740 SiHF740-E3
Contextual Info: IRF740, SiHF740 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 400 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 63 • Fast Switching Qgs (nC) 9.0 • Ease of Paralleling 32 • Simple Drive Requirements Qgd (nC) Configuration

SEC IRF740

Contextual Info: $GYDQFHG 3RZHU 026 7 IRF740 FEATURES BVDSS = 400 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 0.55Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 10 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 400V

Contextual Info: N-CHANNEL POWER MOSFETS IRF740/741 FEATURES T O -2 2 0 • Lower R d s ON • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability

Contextual Info: <^/ v i, One. . 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 N-Channel MOSFET Transistor IRF740 0(2) o DESCRIPTION * -> • Drain Current-ID= 10A@ TC=25°C I • Drain Source Voltage: VDSS= 400V(Min)

power MOSFET IRF740 driver circuit

Abstract: IRF740 irf740 mosfet IRF740PBF SiHF740 SiHF740-E3
Contextual Info: IRF740, SiHF740 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 400 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 63 • Fast Switching Qgs (nC) 9.0 • Ease of Paralleling 32 • Simple Drive Requirements Qgd (nC) Configuration

power MOSFET IRF740 driver circuit

Contextual Info: IRF740, SiHF740 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 400 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 63 • Fast Switching Qgs (nC) 9.0 • Ease of Paralleling 32 • Simple Drive Requirements Qgd (nC) Configuration

Contextual Info: IRF740, SiHF740 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 400 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 63 • Fast Switching Qgs (nC) 9.0 • Ease of Paralleling 32 • Simple Drive Requirements Qgd (nC) Configuration