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    IRF740 MOSFET Search Results

    IRF740 MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    IRF740 MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    irf740

    Abstract: power MOSFET IRF740 irf740 mosfet irf740 application IRF740 400V 10A
    Text: IRF740 N-channel 400V - 0.46Ω - 10A TO-220 PowerMESH II Power MOSFET General features Type VDSS @Tjmax RDS(on) ID IRF740 400V <0.55Ω 10A • Exceptional dv/dt capability ■ 100% avalanche tested ■ Low gate charge ■ Very low intrinsic capacitances


    Original     		PDF IRF740 O-220 O-220 IRF740 IRF740@ power MOSFET IRF740 irf740 mosfet irf740 application IRF740 400V 10A

    IRF7405

    Abstract: irf740 irf740 mosfet power MOSFET IRF740 IRF740 application TO-220 DATASHEET IRF740 transistor equivalent irf740 JESD97
    Text: IRF740 N-channel 400V - 0.46Ω - 10A TO-220 PowerMESH II Power MOSFET General features Type VDSS @Tjmax RDS(on) ID IRF740 400V <0.55Ω 10A • Exceptional dv/dt capability ■ 100% avalanche tested ■ Low gate charge ■ Very low intrinsic capacitances


    Original     		PDF IRF740 O-220 IRF7405 irf740 irf740 mosfet power MOSFET IRF740 IRF740 application TO-220 DATASHEET IRF740 transistor equivalent irf740 JESD97

    IRF740

    Abstract: irf740 mosfet irf740n power MOSFET IRF740 transistor equivalent irf740
    Text: IRF740  N - CHANNEL 400V - 0.48 Ω - 10 A - TO-220 PowerMESH MOSFET TYPE IRF740 • ■ ■ ■ ■ V DSS R DS on ID 400 V < 0.55 Ω 10 A TYPICAL RDS(on) = 0.48 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES


    Original     		PDF IRF740 O-220 IRF740 irf740 mosfet irf740n power MOSFET IRF740 transistor equivalent irf740

    irf740

    Abstract: irf740 mosfet 53A2
    Text: IRF740 N-CHANNEL 400V - 0.46Ω - 10A TO-220 PowerMESH II MOSFET TYPE IRF740 • ■ ■ ■ ■ VDSS RDS on ID 400 V < 0.55 Ω 10 A TYPICAL RDS(on) = 0.46Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE VERY LOW INTRINSIC CAPACITANCES


    Original     		PDF IRF740 O-220 irf740 irf740 mosfet 53A2

    IRF740

    Abstract: No abstract text available
    Text: IRF740 N-CHANNEL 400V - 0.46Ω - 10A TO-220 PowerMESH II MOSFET TYPE IRF740 • ■ ■ ■ ■ VDSS RDS on ID 400 V < 0.55 Ω 10 A TYPICAL RDS(on) = 0.46Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE VERY LOW INTRINSIC CAPACITANCES


    Original     		PDF O-220 IRF740 IRF740

    IRF740

    Abstract: irf740n power MOSFET IRF740 irf740 mosfet MOSFET IRF740
    Text: IRF740 N - CHANNEL 400V - 0.48 Ω - 10 A - TO-220 PowerMESH MOSFET TYPE IRF740 • ■ ■ ■ ■ V DSS R DS on ID 400 V < 0.55 Ω 10 A TYPICAL RDS(on) = 0.48 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES


    Original     		PDF IRF740 O-220 O-220 IRF740 irf740n power MOSFET IRF740 irf740 mosfet MOSFET IRF740

    MOSFET IRF740 as switch

    Abstract: IRF740 irf740 mosfet power MOSFET IRF740 transistor equivalent irf740
    Text: DC COMPONENTS CO., LTD. IRF740 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF N-CHANNEL POWER MOSFET VDSS = 400 Volts RDS on = 0.55 Ohm ID = 10 Amperes Features * Repetitive Avalanche Rated * Fast Switching * Ease of Paralleling * Simple Drive Requirements


    Original     		PDF IRF740 O-220AB MOSFET IRF740 as switch IRF740 irf740 mosfet power MOSFET IRF740 transistor equivalent irf740

    irf740 mosfet

    Abstract: power MOSFET IRF740 IRF740 transistor equivalent irf740 CIRF740
    Text: IRF740 ! POWER MOSFET GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination ‹ Robust High Voltage Termination scheme to provide enhanced voltage-blocking capability ‹ Avalanche Energy Specified without degrading performance over time. In addition, this


    Original     		PDF IRF740 irf740 mosfet power MOSFET IRF740 IRF740 transistor equivalent irf740 CIRF740

    Untitled

    Abstract: No abstract text available
    Text: IRF740, SiHF740 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 400 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 63 • Fast Switching Qgs (nC) 9.0 • Ease of Paralleling 32 • Simple Drive Requirements Qgd (nC) Configuration


    Original     		PDF IRF740, SiHF740 2002/95/EC O-220AB 11-Mar-11

    IRF740

    Abstract: No abstract text available
    Text: IRF740, SiHF740 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 400 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 63 • Fast Switching Qgs (nC) 9.0 • Ease of Paralleling 32 • Simple Drive Requirements Qgd (nC) Configuration


    Original     		PDF IRF740, SiHF740 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRF740

    IRF740PBF

    Abstract: IRF740 irf740 mosfet SiHF740 SiHF740-E3
    Text: IRF740, SiHF740 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 400 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 63 • Fast Switching Qgs (nC) 9.0 • Ease of Paralleling 32 • Simple Drive Requirements Qgd (nC) Configuration


    Original     		PDF IRF740, SiHF740 O-220 O-220 18-Jul-08 IRF740PBF IRF740 irf740 mosfet SiHF740-E3

    Untitled

    Abstract: No abstract text available
    Text: <^/ v i, One. . 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 N-Channel MOSFET Transistor IRF740 0(2) o DESCRIPTION * -> • Drain Current-ID= 10A@ TC=25°C I • Drain Source Voltage: VDSS= 400V(Min)


    Original     		PDF IRF740 O-220C

    power MOSFET IRF740 driver circuit

    Abstract: IRF740 irf740 mosfet IRF740PBF SiHF740 SiHF740-E3
    Text: IRF740, SiHF740 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 400 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 63 • Fast Switching Qgs (nC) 9.0 • Ease of Paralleling 32 • Simple Drive Requirements Qgd (nC) Configuration


    Original     		PDF IRF740, SiHF740 O-220 O-220 18-Jul-08 power MOSFET IRF740 driver circuit IRF740 irf740 mosfet IRF740PBF SiHF740-E3

    power MOSFET IRF740 driver circuit

    Abstract: No abstract text available
    Text: IRF740, SiHF740 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 400 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 63 • Fast Switching Qgs (nC) 9.0 • Ease of Paralleling 32 • Simple Drive Requirements Qgd (nC) Configuration


    Original     		PDF IRF740, SiHF740 O-220 O-220 12-Mar-07 power MOSFET IRF740 driver circuit

    power MOSFET IRF740

    Abstract: No abstract text available
    Text: IRF740 Data Sheet Title F74 bt A, 0V, 50 m, an- 10A, 400V, 0.550 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original     		PDF IRF740 TA17424 IRF740 power MOSFET IRF740

    irf740 mosfet

    Abstract: irf740 application note irf740 MOSFET IRF740 as switch TA17424 TB334
    Text: IRF740 Data Sheet January 2002 10A, 400V, 0.550 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of


    Original     		PDF IRF740 O-220AB irf740 mosfet irf740 application note irf740 MOSFET IRF740 as switch TA17424 TB334

    mosfet 1RF740

    Abstract: 1rf740 IRF740 IRF741 irf740 mosfet IRF742 power MOSFET IRF740 IRF743
    Text: -— - Standard Power MOSFETs File Number 2311 IRF740, IRF741, IRF742, IRF743 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors


    OCR Scan     		PDF IRF740, IRF741, IRF742, IRF743 IRF743 IRF74 75BVdss mosfet 1RF740 1rf740 IRF740 IRF741 irf740 mosfet IRF742 power MOSFET IRF740

    Untitled

    Abstract: No abstract text available
    Text: IRF740 Semiconductor Data Sheet July 1999 10A, 400V, 0.550 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    OCR Scan     		PDF IRF740 O-220AB

    irf740

    Abstract: irf740 mosfet power MOSFET IRF740 IRF740 ir irf741 F7403
    Text: N-CHANNEL POWER MOSFETS IRF740/741/742/743 FEATURES • • • • • • • Lower Ros ON Improved inductive ruggedness Fast switching times Rugged polysllicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability


    OCR Scan     		PDF IRF740/741/742/743 IRF740 IRF741 IRF742 IRF743 irf740 mosfet power MOSFET IRF740 IRF740 ir F7403

    Untitled

    Abstract: No abstract text available
    Text: IRF740/741/742/743 IRFP340/341/342/343 SAMSUNG ELECTRONICS INC N-CHANNEL POWER MOSFETS SÎ16K b?E D FEATURES • • • • • • • Lower Rds on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance


    OCR Scan     		PDF IRF740/741/742/743 IRFP340/341/342/343 F740/IRFP340 IRF741 /IRFP341 F742/IRFP342 F743/IRFP343 IRF740 IRFP340 IRF741

    Untitled

    Abstract: No abstract text available
    Text: N-CHANNEL POWER MOSFETS IRF740/741 FEATURES T O -2 2 0 • Lower R d s ON • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability


    OCR Scan     		PDF IRF740/741 IRF740 IRF741

    IRF740

    Abstract: diode lt 341 IRFP340 LT 741 S IRF740 400V 10A power MOSFET IRF740 irf741 irf742 irf740 mosfet IRFP341
    Text: IRF740/741/742/743 IRFP340/341/342/343 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • Lower Rds ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area


    OCR Scan     		PDF IRF740/741/742/743 IRFP340/341/342/343 40/IRFP34Û IRF741-IRFP341 IRF742/IRFP342 IRF743/IRFP343 IRF740 diode lt 341 IRFP340 LT 741 S IRF740 400V 10A power MOSFET IRF740 irf741 irf742 irf740 mosfet IRFP341

    LG diode 831

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA IRF740 N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR This TM O S Power FET is designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers.


    OCR Scan     		PDF IRF740 LG diode 831

    gate drive circuit for power MOSFET IRF740

    Abstract: irf740 irf741 irf740 mosfet IRF740D IRF743 irf740 STAND FOR IRF740 ir
    Text: IRF740, IRF741, IRF742, IRF743 h a r r is SEMIC0NDUCT0R 8A and 10A, 350V and 400V, 0.55 and 0.80 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 8A and 10A, 350V and 400V • High Input Impedance These are N-Channel enhancement mode silicon gate


    OCR Scan     		PDF IRF740, IRF741, IRF742, IRF743 TA17424. gate drive circuit for power MOSFET IRF740 irf740 irf741 irf740 mosfet IRF740D IRF743 irf740 STAND FOR IRF740 ir