IRF830 AMP Search Results

irp833

Abstract: JRF830 IRF830 3203 MOSFET IRF833 IRF832 IRF831 RF832 mosfet jrf830 F832
Contextual Info: - Standard Pow er M O SFETs IRF830, IRF831, IRF832, IRF833 File N u m b e r 1582 Power MOS Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE

power supply IRF830 APPLICATION

Abstract: power MOSFET IRF830 irf830 datasheet IRF830
Contextual Info: DC COMPONENTS CO., LTD. IRF830 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF N-CHANNEL POWER MOSFET VDSS = 500 Volts RDS on = 1.5 Ohms ID = 4.0 Amperes Features * Repetitive Avalanche Rated * Fast Switching * Ease of Paralleling * Simple Drive Requirements

transistor irf830

Abstract: power supply IRF830 APPLICATION IRF830 PHP3N60 PHP4N50 PHP6N50E IRF8301
Contextual Info: Philips Semiconductors Product specification PowerMOS transistor Avalanche energy rated IRF830 FEATURES SYMBOL QUICK REFERENCE DATA • Repetitive Avalanche Rated • Fast switching • High thermal cycling performance • Low thermal resistance d VDSS = 500 V

MTM4N45

Abstract: fet irf830 MTP4N45 IRF830
Contextual Info: IRF830 Power Field Effect Transistor N–Channel Enhancement Mode Silicon Gate TMOS This TMOS Power FET is designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. http://onsemi.com

fet irf830

Abstract: MTM4N45
Contextual Info: IRF830 Power Field Effect Transistor N−Channel Enhancement Mode Silicon Gate TMOS This TMOS Power FET is designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. • Silicon Gate for Fast Switching Speeds

IRF830

Abstract: IRF 450 MOSFET IRF831 LG diode 831 transistor irf830 TRANSISTOR mosfet IRF830
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA IRF830 IRF831 IRF832 IRF833 Power Field Effect Transistor N-Channel Enhancement Mode Silicon Gate TMOS These TM O S Power FETs are designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid

IRF830.831

Abstract: Irf830
Contextual Info: N-CHANNEL POWER MÛSFETS IRF830/831 FEATURES • • • • • • • Lower R ds On Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability

MSAFX14N100A

Abstract: MSAFX13N110A FSN0450
Contextual Info: N-Channel MOSFETs Part Number Microsemi Division PPC, Inc. Sertech Lab PPC, Inc. Sertech Lab Sertech Lab Santa Ana Sertech Lab Santa Ana MSAEZ15N40A Santa Ana MSAFZ15N40A Sertech Lab FSE2040 Sertech Lab FSN0450 PPC, Inc. IRF830 Sertech Lab FSF0850 Sertech Lab

RF830

Contextual Info: International gäg Rectifier 1 HEXFET Power M O S F E T INTERNATIONAL RECTIFIER 4Ö55452 D01476B G3Ö _ Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements PD-9.311K INR IRF830 bSE I> ^ dss - 500V

IRF830

Contextual Info: IRF830 Iß ANSYS Power Field Effect Tïansistor aiCTRomcs LIMITED N-Channel Enhancement Mode • Silicon Gate for Fast Switching Speeds • Low R d s oii to Minimize On-Losses, Specified at Elevated Temperature • Rugged — SO A is Power Dissipation Limited

IRFP430

Abstract: IRF830.831
Contextual Info: IRF830/831/832/833 IRFP430/431/432/433 N-CHANNEL POWER MOSFETS FEATURES TO -220 • L o w e r R d s ON • • • • • • Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area

IRF833

Abstract: IRF832 1RF831 30010 IRF830 IRF831 w sa 45a diode
Contextual Info: 3875081 G E SOLID STATE 01 Standard Power M O S FE T s DE 1 3Û7SQÔ1 QDlfl37‘ì S I D - - IRF830, IRF831, IRF832, IRF833 File Number 1582 Power MOS Field-Effect Transistors N -CH A NN EL EN H A N C E M E N T M ODE

Contextual Info: • M3D5E71 00S40LÖ EB3 ■ HAS IRF830/Q31/832/833 IRF830R/831R/832R/833R gì HARRIS N-Channel Power M O SFETs Avalanche Energy Rated* August 1991 Package Features T O -2 2 0 A B T O P VIEW • 4.0A and 4.5A, 450V - 500V • rDS °n = 1-5ii and 2 .0 0 • Single Pulse Avalanche Energy Rated*

C312 diode

Abstract: diode C309 diode C315 9311J AN975 power MOSFET IRF830 IRF830 IRF831 IRF833 IF83
Contextual Info: Data Sheet No. PD-9.311J IN T E R N A T IO N A L R E C T IF IE R I« R REPETITIVE AVALANCHE AND dv/dt RATED" IRF830 IRF831 IRF83S IRF833 HEXFET TRANSISTORS IM -C H A IM IM E L 500 Volt, 1.5 Ohm HEXFET TO-220AB Plastic Package Product Summary The HEXFET technology is the key to International

Contextual Info: HE D I MassMsa oooflstio a | Data Sheet No. PD-9.311J T-39-11 INTERNATIONAL R E C T IF IE R IN T E R N A T IO N A L R E C T IF IE R I O R I REPETITIVE AVALANCHE AND dv/dt RATED* IRF830 IRF831 IRF832 IRF833 HEXFET TRANSISTORS Q r X N -C H A N N E L 500 Volt, 1.5 Ohm HEXFET

Contextual Info: M O T O R O L A SC f X S T F S / R F . bflF J> • b3b72S4 00^0440 00Ö ■ M O T b MOTOROLA ■ SEM IC O N D U C T O R TECHNICAL DATA IRF830 P o w e r Field E ffe ct T ra n sisto r N-Channel Enhancement-Mode Silicon Gate This T M O S Power FET is designed for high

1rf830

Abstract: VN64GA 2N6658 IRF120 IRF122 IRF130 IRF132 IRF140 IRF142 IRF150
Contextual Info: MOSPOWER Selector Guide MOSPOWER Selector Guide continued N-Channel MOSPOWER (Continued) Device FiC ^ T ' u TO-3 TO-22QAB Breakdown Voltage (Volts) rDS(on) (Ohms) >d Continuous (Amps) Power Dissipation (Watts) 100 100 100 100 100 100 100 100 100 100 90 90

1rf830

Abstract: ibf830 IRF8301 IRF420 IRF422 IRF430 IRF432 IRF440 IRF442 IRF450
Contextual Info: !R Selector Guide ] MOSPOWER Selector Guide B Siliconix N-Channel MOSPOWER Device u TO-3 Breakdown Voltage Volts 500 500 500 500 500 500 500 500 500 500 500 450 450 450 450 450 450 450 450 450 450 450 400 400 400 400 400 400 400 400 400 400 400 350 350 350

D84 TRANSISTOR

Abstract: IRF830 RF830 j01 relay
Contextual Info: IRF830,831 D84DR2,R1 FUT FIELD EFFECT POWER TRANSISTOR This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­ ness and reliability. 4.5 AMPERES 500, 450 VOLTS

IRF830 equivalent

Abstract: IRF9520 equivalent 10A ibf830 1rf830 IRF450 equivalent IRF9523 IRF9613 IRF9130 IRF9131 IRF9133
Contextual Info: 1-15 MOSPOWER Cross Reference Ust CO o> *1 I I ! Í I ! !! I ! [ I I I ! I I I I I I U I I I I I ¡I i II I I I i i II ¡ ¡ I II I i I ¡ N I I I M M I I I I I I I I II II I 0 2 . CO >% â % «é J d o c 2 <1) a> ID A ra I I I I l I I I I I I I I II I I

1rf830

Abstract: IRF9612 IRF830 IRF432 IRF9130 IRF9523 IRF9532 irf9620 IRF9532 equivalent IRF9132
Contextual Info: 1-15 MOSPOWER Cross Reference Ust CO GO o> *1 I I ! Í I ! !! I ! [ I I I ! I I I I I I U I I I I I ¡I i II I I I i i II ¡ ¡ I II I i I ¡ N I I I M M I I I I I I I I II II I 0 2 . CO >% â % «é J d o c 2 <1) a> ID A ra I I I Il I I I I I I I I II I I

12G471K

Abstract: 10D-11 ntc 10D-11 10D-11 NTC 12v ballast ic electronic ballast for multiplier fluorescent lam E1619 dimming ballast control IC t3 electronic ballast ELECTRONIC BALLAST 12v
Contextual Info: KA7522/D DIMMING BALLAST CONTROL IC BALLAST CONTROL IC 22 DIP The KA7522 is a electronic ballast controller for fluorescent inverter systems. It contains whole function in KA7521, current feed back and preheating time controlled by temperature sensing. FEATURES

1rf830

Abstract: 5002A VN64GA ibf830 IRF432 IRF340 IRF350 IRF440 IRF450 IRF740
Contextual Info: Ü Ü A C D ^ U /C D M i v i a D r /\W i iv iv ^ i v T T k iv r i i i i i v t i v u v i w i C A lA A ^ /\r f^ .n \M é g ^ i ^ v i v i w u iv i^ 1-2 MOSPOWER Prime Product Selector Guide * 2 0 0 ° C RATING I i Packages: u BV qss Volts 450-500 TO-3 TO-220

1rf830

Abstract: LG diode 831 IRF830.831 IRFS32 IRFS30
Contextual Info: MICRO ELECTRONICS CORP ITE D • I bGTlîflû OOOOTTO 2 £77 'm i Æ XÿSlf}- ¡ Il T -2 V U 1RF830 1RF831 IRF832 IRF833 \j; ggg p « * ik i m V ÎI HIGH POWER MOSFETs P*itNuirb«r VDS APPLICATIONS I ’ PR E L IM IN A R Y • SWITCHING REGULATORS • MOTOR DRIVERS