IRF95 Search Results

IRF9510S

Contextual Info: IRF9510S, SiHF9510S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 100 RDS(on) () VGS = - 10 V 1.2 Qg (Max.) (nC) 8.7 Qgs (nC) 2.2 Qgd (nC) 4.1 Configuration Single S DESCRIPTION D2PAK (TO-263) G G D D S • Halogen-free According to IEC 61249-2-21

IRF9530S

Abstract: SiHF9530S SiHF9530S-E3 SiHF9530S-GE3
Contextual Info: IRF9530S, SiHF9530S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 100 RDS(on) () VGS = - 10 V 0.30 Qg (Max.) (nC) 38 Qgs (nC) 6.8 Qgd (nC) 21 Configuration Single S DESCRIPTION D2PAK (TO-263) G G D S • Halogen-free According to IEC 61249-2-21

transistor mosfet irf9530

Abstract: IRF9530 transistor irf9530
Contextual Info: Tem ic IRF9530 Siliconix P-Channel Enhancement-Mode Transistor Product Summary V BR DSS (V) r DS(on) ( ß ) I d (A) -1 0 0 0.30 -1 2 TO-220AB “ Ö " Top View P-Channel MOSFET Absolute Maximum Ratings (Tc = 25 °C Unless Otherwise Noted) Parameter Symbol

Contextual Info: PD- 95412 IRF9520PbF • Lead-Free Document Number: 91074 06/15/04 www.vishay.com 1 IRF9520PbF Document Number: 91074 www.vishay.com 2 IRF9520PbF Document Number: 91074 www.vishay.com 3 IRF9520PbF Document Number: 91074 www.vishay.com 4 IRF9520PbF Document Number: 91074

Contextual Info: PD- 95410 IRF9510PbF • Lead-Free Document Number: 91072 06/15/04 www.vishay.com 1 IRF9510PbF Document Number: 91072 www.vishay.com 2 IRF9510PbF Document Number: 91072 www.vishay.com 3 IRF9510PbF Document Number: 91072 www.vishay.com 4 IRF9510PbF Document Number: 91072

Contextual Info: IRF9520, SiHF9520 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 100 RDS(on) () VGS = - 10 V 0.60 Qg (Max.) (nC) 18 Qgs (nC) 3.0 Qgd (nC) 9.0 Configuration Single S Dynamic dV/dt Rating Repetitive Avalanche Rated

SiHF9530S-E3

Abstract: IRF9530S SiHF9530S IRF9530STRRPBF
Contextual Info: IRF9530S, SiHF9530S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 100 RDS(on) (Ω) VGS = - 10 V 0.30 Qg (Max.) (nC) 38 Qgs (nC) 6.8 Qgd (nC) 21 Configuration Single S Surface Mount Available in Tape and Reel

AN609

Abstract: IRF9540 SiHF9540
Contextual Info: IRF9540_RC, SiHF9540_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,

IRF9510

Contextual Info: IRF9510, SiHF9510 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 100 RDS(on) (Ω) VGS = - 10 V 1.2 Qg (Max.) (nC) 8.7 Qgs (nC) 2.2 Qgd (nC) 4.1 Configuration Single S Dynamic dV/dt Rating Repetitive Avalanche Rated

IRF9520PBF

Contextual Info: PD- 95412 IRF9520PbF • Lead-Free www.irf.com 1 06/15/04 IRF9520PbF 2 www.irf.com IRF9520PbF www.irf.com 3 IRF9520PbF 4 www.irf.com IRF9520PbF www.irf.com 5 IRF9520PbF 6 www.irf.com IRF9520PbF www.irf.com 7 IRF9520PbF TO-220AB Package Outline Dimensions are shown in millimeters inches

irf 418

Abstract: IRF530S
Contextual Info: PD-95987 IRF9520SPbF • Lead-Free www.irf.com 1 06/07/05 IRF9520SPbF 2 www.irf.com IRF9520SPbF www.irf.com 3 IRF9520SPbF 4 www.irf.com IRF9520SPbF www.irf.com 5 IRF9520SPbF 6 www.irf.com IRF9520SPbF Peak Diode Recovery dv/dt Test Circuit Circuit Layout Considerations

Contextual Info: PD -9.1483 International IQR Rectifier IRF9540NS PRELIMINARY HEXFET Power MOSFET • • • • • • • Advanced Process Technology Surface Mount Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated V d s s = -1 0 0 V

Contextual Info: P D -9.1523 International I Q R Rectifier IRF9530NS/L PRELIMINARY HEXFET Power M OSFET • Advanced Process Technology • Surface Mount IRF9530NS • Low-profile through-hole (IRF9530NL) • 175°C Operating Temperature • Fast Switching • P-Channel

IRF9120

Abstract: 1rf830 1rf9530 IRF9122 IRF9513 IRF9141 IRF9512 IRF9523 IRF843 IRF9130
Contextual Info: - * sy € i± £ IR F 9522 IRF9523 IRF9530 IRF9531 IRF9532 IRF9533 »%^<n * f - 1 IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR ]R IR IR IR ¡R IR IR IR IR IR IR IR IR IR IR £ is V 500 N 45 0 P -100 P -60 P -100 P -60 P -100 P -60 P -100 P -60 P -200 P -150

Contextual Info: P-CHANNEL POWER MOSFETS IRF9530/9531 FEATURES TO-220 • Lower R d s <on • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability

IRF9540 mosfet

Abstract: IRF9540 application data sheet IRF9540 irf9540 IRF9540 led driver TA17521 RF1S9540SM9A TB334 RF1S9540 RF1S9540SM
Contextual Info: IRF9540, RF1S9540SM Data Sheet 19A, 100V, 0.200 Ohm, P-Channel Power MOSFETs These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of

Contextual Info: IRF9530, SiHF9530 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 100 RDS(on) () VGS = - 10 V 0.30 Qg (Max.) (nC) 38 Qgs (nC) 6.8 Qgd (nC) 21 Configuration Single S Dynamic dV/dt Rating Repetitive Avalanche Rated

Contextual Info: IRF9540S, SiHF9540S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 100 RDS(on) () VGS = - 10 V Qg (Max.) (nC) 0.20 61 Qgs (nC) 14 Qgd (nC) 29 Configuration Single S DESCRIPTION D2PAK (TO-263) G G D • Halogen-free According to IEC 61249-2-21

R9522

Abstract: IRF9523 R9523 IRF9522 G-D-S TO-92
Contextual Info: SUPERTEX INC ÏÏl I>iF | a 7732TS GO OlhûS =5 IRF9522 IRF9523 R9522 R9523 Objective P-Channel Enhancement-Mode Vertical DMOS Power FETs T-37-Z? Ordering Information b v d ss/ O rd e r N u m b e r / P ackage ^DGS ^DS<ON m ax) *D(ON) (m in ) -100V 0.BC1

Contextual Info: PD- 95410 IRF9510PbF • Lead-Free 1 IRF9510PbF 2

SMD-220

Abstract: smd diode mj 19 DT SMD SMD220 g10 smd AN-994 IRF9540S power mosfet smd package SMD g10 AN994
Contextual Info: PD - 9.917A IRF9540S HEXFET Power MOSFET l l l l l l l Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated P Channel 175°C Operating Temperature Fast Switching D VDSS = -100V RDS on = 0.20Ω G ID = -19A S Description

Contextual Info: IRF9530S, SiHF9530S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 100 RDS(on) () VGS = - 10 V 0.30 Qg (Max.) (nC) 38 Qgs (nC) 6.8 Qgd (nC) 21 Configuration Single S DESCRIPTION D2PAK (TO-263) G G D S • Halogen-free According to IEC 61249-2-21

Contextual Info: IRF9510, SiHF9510 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 100 RDS(on) (Ω) VGS = - 10 V Qg (Max.) (nC) 1.2 8.7 Qgs (nC) 2.2 Qgd (nC) 4.1 Configuration Single S Dynamic dV/dt Rating Repetitive Avalanche Rated

Contextual Info: IRF9510S, SiHF9510S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 100 RDS(on) () VGS = - 10 V 1.2 Qg (Max.) (nC) 8.7 Qgs (nC) 2.2 Qgd (nC) 4.1 Configuration Single S DESCRIPTION D2PAK (TO-263) G G D D S • Halogen-free According to IEC 61249-2-21