IRF9640 MOSFET Search Results

IRF9640

Abstract: RF1S9640 TA17522 IRF9641 IRF9642 IRF9643 RF1S9640SM TB334 TO-220aB 11A
Contextual Info: IRF9640, IRF9641, IRF9642, IRF9643, RF1S9640, RF1S9640SM Semiconductor -9A and -11A, -150V and -200V, 0.5 and 0.7 Ohm, P-Channel Power MOSFETs December 1997 Features Description • -9A and -11A, -150V and -200V These are P-Channel enhancement mode silicon-gate

IRF9640 equivalent

Abstract: irf9640 pdf switch IRF9640 transistor IRF9640 datasheet irf9640 mosfet RF1S9640 RF1S9640SM RF1S9640SM9A TA17522 TB334
Contextual Info: IRF9640, RF1S9640SM Data Sheet 11A, 200V, 0.500 Ohm, P-Channel Power MOSFETs These are P-Channel enhancement mode silicon-gate power field-effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode

irf9640

Abstract: IRF9641
Contextual Info: P-CHANNEL POWER MOSFETS IRF9640/9641 FEATURES • • • • • • • Lower R ds<on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability

SiHF9640

Abstract: irf9640
Contextual Info: IRF9640, SiHF9640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • - 200 RDS(on) (Ω) VGS = - 10 V 0.50 Qg (Max.) (nC) 44 Qgs (nC) 7.1 Qgd (nC) 27 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated

f9640

Abstract: IRF9640 9641 IRF9640.9641 IRF9643 IRF9642 IRF9641 9642
Contextual Info: P-CHANNEL POWER MOSFETS IRF9640/9641 /9642/9643 FEATURES • Low er Rds ON • • • • • • Improved inductive ruggedness Fast switching times Rugged polyslllcon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability

IRF9640

Abstract: RF1S9640 RF1S9640SM RF1S9640SM9A TA17522 TB334
Contextual Info: IRF9640, RF1S9640SM Data Sheet 11A, 200V, 0.500 Ohm, P-Channel Power MOSFETs These are P-Channel enhancement mode silicon-gate power field-effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode

SiHF9640

Abstract: IRF9640
Contextual Info: IRF9640, SiHF9640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • - 200 RDS(on) (Ω) VGS = - 10 V 0.50 Qg (Max.) (nC) 44 Qgs (nC) 7.1 Qgd (nC) 27 Configuration Single S RoHS* COMPLIANT Third generation Power MOSFETs from Vishay provide the

Contextual Info: IRF9640, SiHF9640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • - 200 RDS(on) (Ω) VGS = - 10 V 0.50 Qg (Max.) (nC) 44 Qgs (nC) 7.1 Qgd (nC) 27 Configuration Single S RoHS* COMPLIANT Third generation Power MOSFETs from Vishay provide the

1RF9640

Abstract: IRF9640 9422B 422B
Contextual Info: PD-9.422B International S Rectifier IRF9640 HEXFET Power MOSFET • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel Fast Switching Ease of Paralleling Simple Drive Requirements VDSS = -200V ^DS on = 0-50É2 lD = -1 1 A Description

IRF9640

Abstract: SiHF9640 datasheet irf9640 mosfet IRF9640PBF SiHF9640-E3 8127 irf9640 mosfet power transformer type B
Contextual Info: IRF9640, SiHF9640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • - 200 RDS(on) (Ω) VGS = - 10 V 0.50 Qg (Max.) (nC) 44 Qgs (nC) 7.1 Qgd (nC) 27 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated

irf9640n

Abstract: 1RF9640 1RF9640S 422B IRF9640 D66A IRF9640S
Contextual Info: PD-9.422B International @*11Rectifier IRF9640 HEXFET Power MOSFET • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channei Fast Switching Ease of Paralleling Simple Drive Requirements V DSS = -200V ^DS on = 0 - 5 0 n lD = - 1 1 A

irf9640

Contextual Info: IRF9640, SiHF9640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • - 200 RDS(on) (Ω) VGS = - 10 V 0.50 Qg (Max.) (nC) 44 Qgs (nC) 7.1 Qgd (nC) 27 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated

IRF9640

Abstract: RF1S9640 RF1S9640SM RF1S9640SM9A TA17522 TB334
Contextual Info: IRF9640, RF1S9640SM Data Sheet Title F96 1S9 0SM bt A, 0V, 00 m, 11A, 200V, 0.500 Ohm, P-Channel Power MOSFETs Features These are P-Channel enhancement mode silicon-gate power field-effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a

Contextual Info: IRF9640, SiHF9640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • - 200 RDS(on) (Ω) VGS = - 10 V 0.50 Qg (Max.) (nC) 44 Qgs (nC) 7.1 Qgd (nC) 27 Configuration Single S RoHS* COMPLIANT Third generation Power MOSFETs from Vishay provide the

IRF9640

Abstract: irf9640 mosfet IRFP9240 9243 MOSFETs TO-220 diode J4S IRF9643 IRF9642 IRF9641 IIRF9640
Contextual Info: FEATURES TO -220 0G12EÔ3 Lower R d s ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability IRF9640/9641/9642/9643 7^4142 •

Contextual Info: IRF9640, SiHF9640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • - 200 RDS(on) (Ω) VGS = - 10 V 0.50 Qg (Max.) (nC) 44 Qgs (nC) 7.1 Qgd (nC) 27 Configuration Single S RoHS* COMPLIANT Third generation Power MOSFETs from Vishay provide the

Contextual Info: IRF9640, SiHF9640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • - 200 RDS(on) (Ω) VGS = - 10 V 0.50 Qg (Max.) (nC) 44 Qgs (nC) 7.1 Qgd (nC) 27 Configuration Single S RoHS* COMPLIANT Third generation Power MOSFETs from Vishay provide the

IRF9640

Abstract: IRF9642 RF1S9640SM IRF9643 IRF9641
Contextual Info: S E M I C O N D U C T O R IRF9640, IRF9641, IRF9642, IRF9643, RF1S9640, RF1S9640SM -9A and -11A, -150V and -200V, 0.5 and 0.7 Ohm, P-Channel Power MOSFETs December 1997 Features Description • -9A and -11A, -150V and -200V These are P-Channel enhancement mode silicon-gate

Contextual Info: IRF9640, SiHF9640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • - 200 RDS(on) (Ω) VGS = - 10 V 0.50 Qg (Max.) (nC) 44 Qgs (nC) 7.1 Qgd (nC) 27 Configuration Single S RoHS* COMPLIANT Third generation Power MOSFETs from Vishay provide the

IRF9640PB

Contextual Info: IRF9640, SiHF9640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • - 200 RDS(on) (Ω) VGS = - 10 V 0.50 Qg (Max.) (nC) 44 Qgs (nC) 7.1 Qgd (nC) 27 Configuration Single S RoHS* COMPLIANT Third generation Power MOSFETs from Vishay provide the

IRF9640

Abstract: SiHF9640 SiHF9640-E3
Contextual Info: IRF9640, SiHF9640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • - 200 RDS(on) (Ω) VGS = - 10 V 0.50 Qg (Max.) (nC) 44 Qgs (nC) 7.1 Qgd (nC) 27 Configuration Single S RoHS* COMPLIANT Third generation Power MOSFETs from Vishay provide the

IRF9640

Abstract: IRFP9240-3 irfp9240
Contextual Info: P-CHANNEL POWER MOSFETS IRF9640/9641 /9642/9643 IRFP9240/9241 /9242/9243 FEATURES • • • • • • • Lower Ros ON Improved inductive ru gge d n e ss Fast sw itching times R u g ge d polysilicon gate ceil structure Lower input capacitance Extended safe operating area

IRF9640

Abstract: IRF1S9640 IIRF9640 IRF9643 IRF9642 IRF9641
Contextual Info: HARRIS S E M IC O N D U C T O R IRF9640, IRF9641, IRF9642, IRF9643, RF1S9640, RF1S9640SM -9A and -11A, -150V and -200V, 0.5 and 0.7 Ohm, P-Channel Power MOSFETs December 1997 Features Description • -9A and -11 A, -150V and -200V These are P-Channel enhancement mode silicon-gate

IRF9640

Contextual Info: H AFRFRIS S E M I C O N D U C T O R IRF9640, IRF9641, IRF9642, IRF9643, RF1S9640, RF1S9640SM -9A and -11 A, -150V and -200V, 0.5 and 0.7 Ohm, P-Channel Power MOSFETs December 1997 Features Description • -9A a n d -11 A,-150V and-200V These are P-Channel enhancem ent mode silicon-gate