IRF9Z24N P-CHANNEL POWER Search Results

Contextual Info: PD -9.1484A International IO R Rectifier IRF9Z24N PRELIMINARY HEXFET^ Power MOSFET • • • • • • Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated Voss = -55V ^ D S o n =

IRf 48 MOSFET

Abstract: IRF9Z24N
Contextual Info: PD -9.1484B IRF9Z24N HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l D l VDSS = -55V RDS on = 0.175Ω G ID = -12A S Fifth Generation HEXFETs from International Rectifier

Contextual Info: PD -9.1484B IRF9Z24N HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l D VDSS = -55V l RDS on = 0.175Ω G ID = -12A S Fifth Generation HEXFETs from International Rectifier

IRF9Z24N

Abstract: P-Channel irf IRf 48 MOSFET
Contextual Info: PD -9.1484B IRF9Z24N HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l D l VDSS = -55V RDS on = 0.175Ω G ID = -12A S Fifth Generation HEXFETs from International Rectifier

Contextual Info: IRF9Z24N TO-220AB l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated Power MOSFET Description The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation

f9z24

Contextual Info: PD-9.1484A International I O R Rectifier IRF9Z24N HEXFET Power MOSFET • • • • • • Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated V dss = -55 V R iDS on = 0.1750 lD = -12A

irf9z24n

Contextual Info: PD -9.1484 International IQ R Rectifier IRF9Z24N PRELIMINARY HEXFET Power MOSFET • • • • • • Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated V dss V = -5 5 R ü S o n = 0 . 1 7 5 Q

IRf 48 MOSFET

Abstract: IRF9Z24N
Contextual Info: PD -9.1484A IRF9Z24N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l D l VDSS = -55V RDS on = 0.175Ω G ID = -12A S Fifth Generation HEXFETs from International Rectifier

F1010

Abstract: IRF9Z24N 2D 1002 diode IRf9z24n P-channel power
Contextual Info: PD -9.1484A International IGR Rectifier IRF9Z24N PRELIMINARY H E XFE T Pow er M O S F E T • Advanced Process Technology • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • P-Channel • Fully Avalanche Rated V q s s = -55 V

Contextual Info: AUTOMOTIVE GRADE PD - 96351 AUIRFR9024N AUIRFU9024N Features l Advanced Planar Technology l Low On-Resistance l P-Channel l Dynamic dV/dT Rating l 150°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax

U5505

Abstract: AUFR5505 P-Channel MOSFET 800v AUIRFR5505 AUIRFU5505
Contextual Info: PD - 96342 AUTOMOTIVE GRADE AUIRFR5505 AUIRFU5505 Features l l l l l l l l l l Advanced Planar Technology Low On-Resistance P-Channel Dynamic dV/dT Rating 150°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax

Contextual Info: PD - 96342 AUTOMOTIVE GRADE AUIRFR5505 AUIRFU5505 Features l l l l l l l l l l Advanced Planar Technology Low On-Resistance P-Channel Dynamic dV/dT Rating 150°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax

u9024n

Abstract: AUFR9024N AUIRFR9024N AUIRFU9024N AUIRFR9024NTR marking code H1a AUIRFR AUFR902
Contextual Info: AUTOMOTIVE GRADE PD - 96351 AUIRFR9024N AUIRFU9024N Features l Advanced Planar Technology l Low On-Resistance l P-Channel l Dynamic dV/dT Rating l 150°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax

IRF5905

Abstract: MOSFET IRF 9732 transistor equivalent irf510 IRF3710 equivalent IRFz44n equivalent IRF 9732 irf2807 equivalent IRF3205 application IRD110 HTGB
Contextual Info: TABLE OF CONTENTS EXECUTIVE SUMMARY i 1.0 INTRODUCTION 1-1 2.0 USING HEXFET RELIABILITY INFORMATION 2-1 3.0 THE MATRIX QUALIFICATION PHILOSOPHY 3.1 CRITICAL HEXFET ATTRIBUTES FOR CONSIDERATION IN MATRIX QUALIFICATION 3.2 CROSS REFERENCE FOR ALL PART TYPES

IRU1239SC

Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
Contextual Info: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK