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    IRF9Z34 Search Results

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    IRF9Z34 Price and Stock

    Infineon Technologies AG IRF9Z34NPBF

    MOSFET P-CH 55V 19A TO220AB
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    DigiKey IRF9Z34NPBF Tube 69,287 1
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    Avnet Americas IRF9Z34NPBF Tube 921 18 Weeks 50
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    Mouser Electronics IRF9Z34NPBF 1,589
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    Verical IRF9Z34NPBF 16,688 85
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    Newark IRF9Z34NPBF Bulk 18,552 1
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    Quest Components IRF9Z34NPBF 25
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    Infineon Technologies AG IRF9Z34NSTRLPBF

    MOSFET P-CH 55V 19A D2PAK
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    DigiKey IRF9Z34NSTRLPBF Digi-Reel 6,095 1
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    IRF9Z34NSTRLPBF Cut Tape 6,095 1
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    Avnet Americas IRF9Z34NSTRLPBF Reel 2,400 18 Weeks 800
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    IRF9Z34NSTRLPBF Ammo Pack 1
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    Mouser Electronics IRF9Z34NSTRLPBF 800
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    Chip1Stop IRF9Z34NSTRLPBF Cut Tape 1,970
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    Vishay Siliconix IRF9Z34STRLPBF

    MOSFET P-CH 60V 18A D2PAK
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    DigiKey IRF9Z34STRLPBF Cut Tape 854 1
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    IRF9Z34STRLPBF Digi-Reel 854 1
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    IRF9Z34STRLPBF Reel 800
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    New Advantage Corporation IRF9Z34STRLPBF 4,800 1
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    Vishay Siliconix IRF9Z34PBF

    MOSFET P-CH 60V 18A TO220AB
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    DigiKey IRF9Z34PBF Tube 763 1
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    New Advantage Corporation IRF9Z34PBF 1,450 1
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    Vishay Siliconix IRF9Z34SPBF

    MOSFET P-CH 60V 18A D2PAK
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    DigiKey IRF9Z34SPBF Tube 752 1
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    IRF9Z34 Datasheets (51)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRF9Z34 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRF9Z34 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 60V 18A TO-220AB Original PDF
    IRF9Z34 International Rectifier HEXFET Power Mosfet Scan PDF
    IRF9Z34 International Rectifier HEXFET Power MOSFET Scan PDF
    IRF9Z34 International Rectifier TO-220 Plastic Package HEXFETs Scan PDF
    IRF9Z34 International Rectifier TO-220 HEXFET Power MOSFET Scan PDF
    IRF9Z34 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRF9Z34 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    IRF9Z34 Samsung Electronics P-Channel Power MOSFET Scan PDF
    IRF9Z34L International Rectifier HEXFET Power MOSFET Original PDF
    IRF9Z34L Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRF9Z34LPBF International Rectifier Surface Mount Original PDF
    IRF9Z34N International Rectifier -55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package; A IRF9Z34N with Standard Packaging Original PDF
    IRF9Z34N International Rectifier Power MOSFET(Vdss=-55V, Rds(on)=0.10ohm, Id=-19A) Original PDF
    IRF9Z34N Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRF9Z34N International Rectifier Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, P-Channel, Power, -60V, -18A, Pkg Style TO-220AB Scan PDF
    IRF9Z34NL International Rectifier -55V Single P-Channel HEXFET Power MOSFET in a TO-262 package; A IRF9Z34NL with Standard Packaging Original PDF
    IRF9Z34NL International Rectifier HEXFET Power Mosfet Original PDF
    IRF9Z34NLPBF International Rectifier Original PDF
    IRF9Z34NLPBF International Rectifier -55V Single P-Channel HEXFET Power MOSFET in a TO-262 package; Similar to IRF9Z34NL with Lead Free Packaging Original PDF

    IRF9Z34 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRF9Z34

    Abstract: IRF9Z34PBF
    Text: IRF9Z34, SiHF9Z34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 60 RDS(on) (Ω) VGS = - 10 V 0.14 Qg (Max.) (nC) 34 Qgs (nC) 9.9 Qgd (nC) 16 Configuration Single S TO-220AB Dynamic dV/dt Rating Repetitive Avalanche Rated


    Original     		PDF IRF9Z34, SiHF9Z34 2002/95/EC O-220AB O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRF9Z34 IRF9Z34PBF

    IRF9Z34

    Abstract: SiHF9Z34 SiHF9Z34-E3
    Text: IRF9Z34, SiHF9Z34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 60 RDS(on) (Ω) VGS = - 10 V 0.14 Qg (Max.) (nC) 34 Qgs (nC) 9.9 Qgd (nC) 16 Configuration Single S TO-220AB Dynamic dV/dt Rating Repetitive Avalanche Rated


    Original     		PDF IRF9Z34, SiHF9Z34 O-220AB 2002/95/EC O-220AB 11-Mar-11 IRF9Z34 SiHF9Z34-E3

    Untitled

    Abstract: No abstract text available
    Text: IRF9Z34, SiHF9Z34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 60 RDS(on) (Ω) VGS = - 10 V 0.14 Qg (Max.) (nC) 34 Qgs (nC) 9.9 Qgd (nC) 16 Configuration Single S TO-220AB Dynamic dV/dt Rating Repetitive Avalanche Rated


    Original     		PDF IRF9Z34, SiHF9Z34 O-220AB 2002/95/EC O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    AN609

    Abstract: IRF9Z34 SiHF9Z34
    Text: IRF9Z34_RC, SiHF9Z34_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF IRF9Z34 SiHF9Z34 AN609, 29-Mar-10 AN609

    Untitled

    Abstract: No abstract text available
    Text: IRF9Z34, SiHF9Z34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 60 RDS(on) (Ω) VGS = - 10 V 0.14 Qg (Max.) (nC) 34 Qgs (nC) 9.9 Qgd (nC) 16 Configuration Single S TO-220AB Dynamic dV/dt Rating Repetitive Avalanche Rated


    Original     		PDF IRF9Z34, SiHF9Z34 2002/95/EC O-220AB O-220AB 11-Mar-11

    marking F53

    Abstract: IRF9Z34NL IRF9Z34NS
    Text: PD - 9.1525 IRF9Z34NS/L HEXFET Power MOSFET Advanced Process Technology Surface Mount IRF9Z34NS l Low-profile through-hole (IRF9Z34NL) l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l D l VDSS = -55V RDS(on) = 0.10Ω


    Original     		PDF IRF9Z34NS/L IRF9Z34NS) IRF9Z34NL) marking F53 IRF9Z34NL IRF9Z34NS

    Untitled

    Abstract: No abstract text available
    Text: IRF9Z34, SiHF9Z34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 60 RDS(on) (Ω) VGS = - 10 V 0.14 Qg (Max.) (nC) 34 Qgs (nC) 9.9 Qgd (nC) 16 Configuration Single S TO-220AB Dynamic dV/dt Rating Repetitive Avalanche Rated


    Original     		PDF IRF9Z34, SiHF9Z34 O-220AB 2002/95/EC O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: PD - 94983 IRF9Z34NPbF Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated l Lead-Free Description HEXFET Power MOSFET l D VDSS = -55V RDS on = 0.10" G ID = -19A S Fifth Generation HEXFETs from International Rectifier


    Original     		PDF IRF9Z34NPbF O-220 O-220AB

    Untitled

    Abstract: No abstract text available
    Text: PD - 94983 IRF9Z34NPbF Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated l Lead-Free Description HEXFET Power MOSFET l D VDSS = -55V RDS on = 0.10Ω G ID = -19A S Fifth Generation HEXFETs from International Rectifier


    Original     		PDF IRF9Z34NPbF O-220 O-220AB. O-220AB

    irf 418

    Abstract: IRF 504 D2Pak Package dimensions IRf 634 IRF9Z34N
    Text: PD- 95769 IRF9Z34NSPbF IRF9Z34NLPbF • Lead-Free 1 IRF9Z34NS/LPbF 2 IRF9Z34NS/LPbF D2Pak Package Outline Dimensions are shown in millimeters (inches D2Pak Part Marking Information T HIS IS AN IRF 530S WIT H LOT CODE 8024 ASSEMBLE D ON WW 02, 2000 IN T HE ASSE MBLY LINE "L"


    Original     		PDF IRF9Z34NSPbF IRF9Z34NLPbF IRF9Z34NS/LPbF F530S EIA-418. irf 418 IRF 504 D2Pak Package dimensions IRf 634 IRF9Z34N

    IRF9Z34L

    Abstract: IRF9Z34S
    Text: PD - 9.913A IRF9Z34S/L HEXFET Power MOSFET Advanced Process Technology l Surface Mount IRF9Z34S l Low-profile through-hole (IRF9Z34L) l 175°C Operating Temperature l Fast Switching l P- Channel l Fully Avalanche Rated Description l D VDSS = -60V RDS(on) = 0.14Ω


    Original     		PDF IRF9Z34S/L IRF9Z34S) IRF9Z34L) IRF9Z34L IRF9Z34S

    IRL3103L

    Abstract: No abstract text available
    Text: PD- 95769 IRF9Z34NSPbF IRF9Z34NLPbF • Lead-Free www.irf.com 1 04/25/05 IRF9Z34NS/LPbF 2 www.irf.com IRF9Z34NS/LPbF www.irf.com 3 IRF9Z34NS/LPbF 4 www.irf.com IRF9Z34NS/LPbF www.irf.com 5 IRF9Z34NS/LPbF 6 www.irf.com IRF9Z34NS/LPbF www.irf.com 7 IRF9Z34NS/LPbF


    Original     		PDF IRF9Z34NSPbF IRF9Z34NLPbF IRF9Z34NS/LPbF EIA-418. IRL3103L

    IRF9Z34N

    Abstract: No abstract text available
    Text: PD - 9.1485B IRF9Z34N HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l D l VDSS = -55V RDS on = 0.10Ω G ID = -19A S Fifth Generation HEXFETs from International Rectifier


    Original     		PDF 1485B IRF9Z34N O-220 IRF9Z34N

    Untitled

    Abstract: No abstract text available
    Text: IRF9Z34, SiHF9Z34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 60 RDS(on) (Ω) VGS = - 10 V 0.14 Qg (Max.) (nC) 34 Qgs (nC) 9.9 Qgd (nC) 16 Configuration Single S TO-220AB Dynamic dV/dt Rating Repetitive Avalanche Rated


    Original     		PDF IRF9Z34, SiHF9Z34 2002/95/EC O-220AB O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    IRF9Z34

    Abstract: irf9z34 mosfet SiHF9Z34 equivalent of irf9z34 SiHF9Z34-E3
    Text: IRF9Z34, SiHF9Z34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 60 RDS(on) (Ω) VGS = - 10 V 0.14 Qg (Max.) (nC) 34 Qgs (nC) 9.9 Qgd (nC) 16 Configuration Single S TO-220 Dynamic dV/dt Rating Repetitive Avalanche Rated


    Original     		PDF IRF9Z34, SiHF9Z34 O-220 O-220 18-Jul-08 IRF9Z34 irf9z34 mosfet equivalent of irf9z34 SiHF9Z34-E3

    9571

    Abstract: AN609 IRF9Z34L IRF9Z34S SiHF9Z34S
    Text: IRF9Z34S_RC, IRF9Z34L_RC, SiHF9Z34S_RC, SiHF9Z34L_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		PDF IRF9Z34S IRF9Z34L SiHF9Z34S SiHF9Z34L AN609, 30-Mar-10 9571 AN609

    IRF9Z34L

    Abstract: IRF9Z34S SiHF9Z34S SiHF9Z34S-E3
    Text: IRF9Z34S, SiHF9Z34S, IRF9Z34L, SiHF9Z34L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 60 RDS(on) (Ω) VGS = - 10 V 0.14 Qg (Max.) (nC) 34 Qgs (nC) 9.9 Qgd (nC) 16 Configuration Single Advanced Process Technology


    Original     		PDF IRF9Z34S, SiHF9Z34S IRF9Z34L, SiHF9Z34L 18-Jul-08 IRF9Z34L IRF9Z34S SiHF9Z34S-E3

    Untitled

    Abstract: No abstract text available
    Text: PD - 9.1525 IRF9Z34NS/L HEXFET Power MOSFET Advanced Process Technology Surface Mount IRF9Z34NS l Low-profile through-hole (IRF9Z34NL) l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l D l VDSS = -55V RDS(on) = 0.10Ω


    Original     		PDF IRF9Z34NS/L IRF9Z34NS) IRF9Z34NL) capabl245,

    IRF9Z34

    Abstract: irf9z34 mosfet
    Text: K Rectifier IRF9Z34 HEXFET® Power M O S F E T • • • • • • • INTERNATIONAL RECTIFIER Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements bSEH V DSS = - 6 0 V


    OCR Scan     		PDF IRF9Z34 O-220 IRF9Z34 irf9z34 mosfet

    IRf 444 MOSFET

    Abstract: DIODE Z32 irf9z34 IRF9Z30 irf9z34 mosfet IRF z34 MOSFET IRF high current p-channel P-channel power mosfet irf IRF9Z35 IRf 444
    Text: SAMSUNG ELECTRONICS INC fc^E D • 7^4142 IRF9Z34/Z35 IRF9Z30/Z32 □ □ 1 2 2 Iìc T77 M S U G K P-CHANNEL POWER MOSFETS FEATURES • • • • • • • Lower R ds <on > Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure


    OCR Scan     		PDF IRF9Z34/Z35 IRF9Z30/Z32 IRF9Z30 IRF9Z34 IRF9Z32 IRF9Z35 IRf 444 MOSFET DIODE Z32 irf9z34 mosfet IRF z34 MOSFET IRF high current p-channel P-channel power mosfet irf IRf 444

    1RF9Z34N

    Abstract: IRF9Z34N 1RF9Z34 RF1010
    Text: PD - 9.1485A International IG R Rectifier IRF9Z34N PRELIMINARY HEXFET Power MOSFET • • • • • • Advanced Process Technology Dynamic dv/dt Plating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated V dss = -55V ^ D S o n = 0 . 1 0 Q


    OCR Scan     		PDF IRF9Z34N 1RF9Z34N IRF9Z34N 1RF9Z34 RF1010

    irf9z34n

    Abstract: No abstract text available
    Text: PD - 9.1485B International TOR Rectifier IRF9Z34N HEXFET Power M OSFET • Advanced Process Technology • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • P-Channel • Fully Avalanche Rated Description V dss = -55V RDS on = 0 .1 0 ft


    OCR Scan     		PDF O-220 irf9z34n

    1RF9Z30

    Abstract: irf9z34 IRF9Z30
    Text: IRF9Z34/Z35 IRF9Z30/Z32 P-CHANNEL POWER MOSFETS FEATURES • Lower Rds <on • • • • Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance • Extended safe operating area • Improved high temperature reliability


    OCR Scan     		PDF IRF9Z34/Z35 IRF9Z30/Z32 1RF9Z30 IRF9Z34 IRF9Z32 IRF9Z35 IRF9Z30

    IRF9Z34N

    Abstract: 1682V
    Text: PD - 9.1485B International IG R Rectifier IRF9Z34N HEXFET Power MOSFET • • • • • • Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fuily Avalanche Rated V dss = -5 5 V f^ D S o n = 0 . 1 0 Í 2


    OCR Scan     		PDF 1485B IRF9Z34N IRF9Z34N 1682V