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Vishay Siliconix IRFBG30PBF-BE3 MOSFET N-CH 1000V 3.1A TO220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRFBG30PBF-BE3	Tube	1,358		1	1 $2.45 10 $2.45 100 $1.4076 1000 $1.175 10000 $1.175	Buy Now
New Advantage Corporation	IRFBG30PBF-BE3		1,000		1	1 - 10 - 100 - 1000 $0.9272 10000 $0.9272	Buy Now
Vishay Siliconix IRFBG30 MOSFET N-CH 1000V 3.1A TO220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRFBG30	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
ComSIT USA	IRFBG30		277			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vishay Intertechnologies IRFBG30PBF-BE3 MOSFET N-CHANNEL 1000V - Rail/Tube (Alt: IRFBG30PBF-BE3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas ()	IRFBG30PBF-BE3	Tube	1,000	15 Weeks	1,000	1 - 10 - 100 - 1000 $1.175 10000 $1.10588	Buy Now
	IRFBG30PBF-BE3	Bulk		17 Weeks, 4 Days	1	1 $2.65 10 $1.59 100 $1.43 1000 $1.43 10000 $1.43	Buy Now
Mouser Electronics	IRFBG30PBF-BE3		8,660			1 $2.36 10 $1.82 100 $1.38 1000 $0.991 10000 $0.938	Buy Now
Verical ()	IRFBG30PBF-BE3		1,000		1,000	1 - 10 - 100 - 1000 $1.1515 10000 $1.1515	Buy Now
	IRFBG30PBF-BE3		775		48	1 - 10 - 100 $1.4706 1000 $1.3872 10000 $1.3872	Buy Now
Newark	IRFBG30PBF-BE3	Bulk	775		1	1 $1.05 10 $1.05 100 $1.05 1000 $1.05 10000 $1.05	Buy Now
TTI	IRFBG30PBF-BE3	Tube	27,900		50	1 - 10 - 100 $1.32 1000 $1.05 10000 $0.99	Buy Now

EBV Elektronik	IRFBG30PBF-BE3			16 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vyrian	IRFBG30PBF-BE3		5,291			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vishay Intertechnologies IRFBG30PBF Power MOSFET, N Channel, 1 kV, 3.1 A, 5 ohm, TO-220AB, Through Hole - Bulk (Alt: 63J6702)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas ()	IRFBG30PBF	Bulk		17 Weeks, 3 Days	1	1 $2.45 10 $1.63 100 $1.53 1000 $1.53 10000 $1.53	Buy Now
	IRFBG30PBF	Bulk		15 Weeks	1,000	1 - 10 - 100 - 1000 $1.175 10000 $1.10588	Buy Now
Mouser Electronics	IRFBG30PBF		3,804			1 $2.21 10 $2.06 100 $1.48 1000 $1.07 10000 $1.05	Buy Now
Verical	IRFBG30PBF		1,000		7	1 - 10 $1.8644 100 $1.2669 1000 $0.9705 10000 $0.9608	Buy Now
Arrow Electronics	IRFBG30PBF		1,000	15 Weeks	1	1 $1.8827 10 $1.8638 100 $1.274 1000 $0.9777 10000 $0.968	Buy Now
Newark	IRFBG30PBF	Bulk	540		1	1 $1.62 10 $1.37 100 $1.37 1000 $1.17 10000 $1.14	Buy Now

RS	IRFBG30PBF	Bulk	780		1	1 $2.41 10 $2.12 100 $1.93 1000 $1.81 10000 $1.81	Buy Now
Bristol Electronics	IRFBG30PBF		680			1 - 10 - 100 - 1000 - 10000 -	Get Quote
TTI	IRFBG30PBF	Tube	3,850		50	1 - 10 - 100 $1.1 1000 $1.01 10000 $0.99	Buy Now
TME	IRFBG30PBF		907		1	1 $2.34 10 $1.19 100 $1.04 1000 $0.86 10000 $0.82	Buy Now
Rutronik	IRFBG30PBF	Box	1,000		50	1 - 10 - 100 $0.7596 1000 $0.6215 10000 $0.6215	Buy Now
Avnet Asia	IRFBG30PBF			17 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
EBV Elektronik	IRFBG30PBF		1,150	16 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vyrian	IRFBG30PBF		17,330			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vishay Intertechnologies IRFBG30PBF. N Channel Mosfet, 1Kv, 3.1A, To-220; Channel Type:N Channel; Drain Source Voltage Vds:1Kv; Continuous Drain Current Id:3.1A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Msl:- Rohs Compliant: No \|Vishay IRFBG30PBF.
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	IRFBG30PBF.	Bulk			1	1 $2.5 10 $1.66 100 $1.53 1000 $1.3 10000 $1.3	Buy Now

Find more IRFBG30 price and stock on Findchips.com

IRFBG30 Datasheets (12)

Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IRFBG30	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF	165.78KB	67
IRFBG30	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1000V 3.1A TO-220AB	Original	PDF		9
IRFBG30	International Rectifier	TO-220 Plastic Package HEXFETs	Scan	PDF	100.13KB	1
IRFBG30	International Rectifier	TO-220 HEXFET Power MOSFET	Scan	PDF	41.94KB	1
IRFBG30	International Rectifier	HEXFET Power MOSFET	Scan	PDF	171.53KB	6
IRFBG30	International Rectifier	Power MOSFET(Vdss=1000V, Rds(on)=5.0ohm, Id=3.1A)	Scan	PDF	171.52KB	6
IRFBG30	International Rectifier	Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, N-Channel, 1000V, 3.1A, Pkg Style TO-220AB	Scan	PDF	50.01KB	1
IRFBG30	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF	106.71KB	1
IRFBG30	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	39.09KB	1
IRFBG30PBF	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1000V 3.1A TO-220AB	Original	PDF		9
IRFBG30PBF	International Rectifier	600V Single N-Channel HEXFET Power MOSFET in a TO-220AB package	Scan	PDF	171.21KB	8
IRFBG30PBF-BE3	Vishay Siliconix	MOSFET N-CH 1000V 3.1A TO220AB	Original	PDF	620.83KB	9

IRFBG30 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
IRFBG30 Abstract: SiHFBG30 SiHFBG30-E3 Contextual Info: IRFBG30, SiHFBG30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 1000 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 80 • Fast Switching Qgs (nC) 10 • Ease of Paralleling 42 • Simple Drive Requirements Qgd (nC)	Original	IRFBG30, SiHFBG30 2002/95/EC O-220AB O-220AB 11-Mar-11 IRFBG30 SiHFBG30-E3	PDF
IRFBG30 Contextual Info: IRFBG30, SiHFBG30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 1000 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 80 • Fast Switching Qgs (nC) 10 • Ease of Paralleling 42 • Simple Drive Requirements Qgd (nC)	Original	IRFBG30, SiHFBG30 2002/95/EC O-220AB 11-Mar-11 IRFBG30	PDF
IRFBG30 Contextual Info: IRFBG30, SiHFBG30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 1000 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 80 • Fast Switching Qgs (nC) 10 • Ease of Paralleling 42 • Simple Drive Requirements Qgd (nC)	Original	IRFBG30, SiHFBG30 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRFBG30	PDF
IRFBG30 Contextual Info: IRFBG30, SiHFBG30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 1000 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 80 • Fast Switching Qgs (nC) 10 • Ease of Paralleling 42 • Simple Drive Requirements Qgd (nC)	Original	IRFBG30, SiHFBG30 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A IRFBG30	PDF
IRFBG30 Contextual Info: IRFBG30, SiHFBG30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 1000 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 80 • Fast Switching Qgs (nC) 10 • Ease of Paralleling 42 • Simple Drive Requirements Qgd (nC)	Original	IRFBG30, SiHFBG30 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A IRFBG30	PDF
Contextual Info: IRFBG30 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)1000 V(BR)GSS (V) I(D) Max. (A)3.1 I(DM) Max. (A) Pulsed I(D)2.0 @Temp (øC)100# IDM Max (@25øC Amb)12 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)125 Minimum Operating Temp (øC)-55õ	Original	IRFBG30	PDF
irfbg30 Abstract: 001S00 Contextual Info: HÔ5 5H52 International k Rectifier 2 b? • INR PD-9.620A IRFBG30 HEXFET® Power M O S F E T • • • • • aDm=n0 bSE D INTERNATIONAL RECTIFIER Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements	OCR Scan	IRFBG30 O-220 S5452 0G15QD3 irfbg30 001S00	PDF
IRFBG30 Contextual Info: IRFBG30, SiHFBG30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 1000 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 80 • Fast Switching Qgs (nC) 10 • Ease of Paralleling 42 • Simple Drive Requirements Qgd (nC)	Original	IRFBG30, SiHFBG30 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A IRFBG30	PDF
IRFBG30PBF Contextual Info: PD - 94989 IRFBG30PbF • Lead-Free 1 IRFBG30PbF 2 IRFBG30PbF TO-220AB Package Outline Dimensions are shown in millimeters inches 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) -B- 3.78 (.149) 3.54 (.139) 4.69 (.185) 4.20 (.165) -A- 1.32 (.052) 1.22 (.048)	Original	IRFBG30PbF O-220AB O-220AB. IRFBG30PBF	PDF
IRFBG30 Abstract: ior 481 mosfet PD962 IBC30 9620a 9620* diode Contextual Info: PD-9.620A International S Rectifier IRFBG30 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements V DSS= 1000V R DS on = 5 -0 ß lD = 3.1 A Description DATA SHEETS	OCR Scan	IRFBG30 O-220 IRFBG30 ior 481 mosfet PD962 IBC30 9620a 9620* diode	PDF
IRFBG30 Contextual Info: IRFBG30, SiHFBG30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 1000 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 80 • Fast Switching Qgs (nC) 10 • Ease of Paralleling 42 • Simple Drive Requirements Qgd (nC)	Original	IRFBG30, SiHFBG30 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRFBG30	PDF
IRFBG30PBF Contextual Info: PD - 94989 IRFBG30PbF • Lead-Free Document Number: 91124 2/9/04 www.vishay.com 1 IRFBG30PbF Document Number: 91124 www.vishay.com 2 IRFBG30PbF Document Number: 91124 www.vishay.com 3 IRFBG30PbF Document Number: 91124 www.vishay.com 4 IRFBG30PbF Document Number: 91124	Original	IRFBG30PbF O-220AB 12-Mar-07 IRFBG30PBF	PDF
Contextual Info: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com CASE OUTLINE: TYPE: IRFBG30 TO-220AB HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:	Original	O-220AB IRFBG30	PDF
AN609 Abstract: IRFBG30 SiHFBG30 Contextual Info: IRFBG30_RC, SiHFBG30_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,	Original	IRFBG30 SiHFBG30 AN609, 20-Apr-10 AN609	PDF

IRFBG30 Abstract: IRFBG30PBF SiHFBG30-E3 81145 RD-170 SiHFBG30 Contextual Info: IRFBG30, SiHFBG30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 1000 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 80 • Fast Switching Qgs (nC) 10 • Ease of Paralleling 42 • Simple Drive Requirements Qgd (nC) Configuration	Original	IRFBG30, SiHFBG30 O-220 O-220 18-Jul-08 IRFBG30 IRFBG30PBF SiHFBG30-E3 81145 RD-170	PDF
IRFBG30 Contextual Info: IRFBG30, SiHFBG30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 1000 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 80 • Fast Switching Qgs (nC) 10 • Ease of Paralleling 42 • Simple Drive Requirements Qgd (nC)	Original	IRFBG30, SiHFBG30 2002/95/EC O-220AB O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRFBG30	PDF
IRFBG30PBF Contextual Info: PD - 94989 IRFBG30PbF • Lead-Free www.irf.com 1 2/9/04 IRFBG30PbF 2 www.irf.com IRFBG30PbF www.irf.com 3 IRFBG30PbF 4 www.irf.com IRFBG30PbF www.irf.com 5 IRFBG30PbF 6 www.irf.com IRFBG30PbF TO-220AB Package Outline Dimensions are shown in millimeters inches	Original	IRFBG30PbF O-220AB O-220AB. IRFBG30PBF	PDF
irfbg30 Contextual Info: IRFBG30, SiHFBG30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 1000 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 80 • Fast Switching Qgs (nC) 10 • Ease of Paralleling 42 • Simple Drive Requirements Qgd (nC) Configuration	Original	IRFBG30, SiHFBG30 O-220 O-220 12-Mar-07 irfbg30	PDF
mosfet cross reference Abstract: Power MOSFET Cross Reference Guide 2SK2146 Cross Reference power MOSFET SUP60NO6-18 MOSFET TOSHIBA 2SK irf510 Motorola SUP70NO6 STP16NEO6 IRF540 substitution Contextual Info: TMOS Power MOSFET Cross Reference This Cross reference lists MOSFETs by either industry standard part number or by manufacturer's part number for which there is a Motorola nearest or similar replacement. For devices not listed, or for additional information, contact the nearest Motorola Franchised Distributor or your local	Original		PDF
fqp60n06 Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640 Contextual Info: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier	Original	STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640	PDF
sumida 94V-0 Abstract: inverter using irfz44n MOSFET IRF9430 IRF7414 irfp460 dc welding circuit diagram IRFP264 inverter circuits IRFP450 inverter Three phase inverter using irfp450 mosfet Diagram Sumida ul94v-0 inverter IRF 544 N MOSFET Contextual Info: International Rectifier The IGBT SIP & HEXPak Navigator Effective 8 September, EXISTING Products NEW Products UPCOMING Products POTENTIAL Products released to production in last 6-9 months to be released within next 3-4 months no current plans. see bus.mgmt.	Original	IRFK2D054 IRFK2F054 CPV362M4U CPV363M4U CPV364M4U CPV362M4F CPV363M4F CPV364M4F CPV362M4K CPV363M4K sumida 94V-0 inverter using irfz44n MOSFET IRF9430 IRF7414 irfp460 dc welding circuit diagram IRFP264 inverter circuits IRFP450 inverter Three phase inverter using irfp450 mosfet Diagram Sumida ul94v-0 inverter IRF 544 N MOSFET	PDF
IRGKI165F06 Abstract: IRGDDN600M06 IRGDDN600K06 IRF7311 IRGNIN075 IRFK6H054 IRF7601 IRLI2203N IRLML2803 IRLML5103 Contextual Info: Index HEXFET Power MOSFETs Part Number International Rectifier ID R DS on V(BR)DSS Continuous On-State Drain-to-Source Drain Current Breakdown Voltage Resistance 25°C (Ω) (A) (V) ID Continuous Drain Current 70°C (A) RθJ A Max Thermal Resistance (°C/W)	Original	OT-23) IRLML2402* IRLML2803 IRLML5103 IRLML6302* IRGKI165F06 IRGDDN600M06 IRGDDN600K06 IRF7311 IRGNIN075 IRFK6H054 IRF7601 IRLI2203N IRLML2803 IRLML5103	PDF
IRF470 Abstract: IRFP240R IRF840CF IRF449 IRF340A irf520 power IRF341R IRFP20 irf460 to-247 IRF331R Contextual Info: STI Type: IRF331 Notes: Breakdown Voltage: 350 Continuous Current: 5.5 RDS on Ohm: 1.0 Trans Conductance Mhos: 3.0 Trans Conductance A: 3.0 Gate Threshold min: 2.0 Gate Threshold max: 4.0 Resistance Switching ton: 30 Resistance Switching toff: 55 Resistance Switching ID: 3.0	Original	IRF331 O-204AA/TO-3 IRF332 2N6012 O-247 IRFP352R IRFP353R IRF470 IRFP240R IRF840CF IRF449 IRF340A irf520 power IRF341R IRFP20 irf460 to-247 IRF331R	PDF
STK411-230E Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for	Original	STVDST-01 CAT22 STK411-230E STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D	PDF

IRFBG30 Search Results

IRFBG30 Price and Stock

Vishay Siliconix IRFBG30PBF-BE3

Vishay Siliconix IRFBG30

Vishay Intertechnologies IRFBG30PBF-BE3

Vishay Intertechnologies IRFBG30PBF

Vishay Intertechnologies IRFBG30PBF.

IRFBG30 Datasheets (12)

IRFBG30 Datasheets Context Search

IRFBG30

IRFBG30

IRFBG30

IRFBG30

IRFBG30

irfbg30

IRFBG30

IRFBG30PBF

IRFBG30

IRFBG30

IRFBG30PBF

AN609

IRFBG30

IRFBG30

IRFBG30PBF

irfbg30

mosfet cross reference

fqp60n06

sumida 94V-0

IRGKI165F06

IRF470

STK411-230E