IRFBG30 TO220 Search Results

IRFBG30

Abstract: SiHFBG30 SiHFBG30-E3
Contextual Info: IRFBG30, SiHFBG30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 1000 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 80 • Fast Switching Qgs (nC) 10 • Ease of Paralleling 42 • Simple Drive Requirements Qgd (nC)

IRFBG30

Contextual Info: IRFBG30, SiHFBG30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 1000 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 80 • Fast Switching Qgs (nC) 10 • Ease of Paralleling 42 • Simple Drive Requirements Qgd (nC)

IRFBG30

Contextual Info: IRFBG30, SiHFBG30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 1000 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 80 • Fast Switching Qgs (nC) 10 • Ease of Paralleling 42 • Simple Drive Requirements Qgd (nC)

IRFBG30

Abstract: ior 481 mosfet PD962 IBC30 9620a 9620* diode
Contextual Info: PD-9.620A International S Rectifier IRFBG30 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements V DSS= 1000V R DS on = 5 -0 ß lD = 3.1 A Description DATA SHEETS

IRFBG30

Contextual Info: IRFBG30, SiHFBG30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 1000 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 80 • Fast Switching Qgs (nC) 10 • Ease of Paralleling 42 • Simple Drive Requirements Qgd (nC)

Contextual Info: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com CASE OUTLINE: TYPE: IRFBG30 TO-220AB HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:

irfbg30

Abstract: 001S00
Contextual Info: HÔ5 5H52 International k Rectifier 2 b? • INR PD-9.620A IRFBG30 HEXFET® Power M O S F E T • • • • • aDm=n0 bSE D INTERNATIONAL RECTIFIER Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements

IRFBG30

Contextual Info: IRFBG30, SiHFBG30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 1000 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 80 • Fast Switching Qgs (nC) 10 • Ease of Paralleling 42 • Simple Drive Requirements Qgd (nC)

IRFBG30

Contextual Info: IRFBG30, SiHFBG30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 1000 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 80 • Fast Switching Qgs (nC) 10 • Ease of Paralleling 42 • Simple Drive Requirements Qgd (nC)

IRFBG30

Contextual Info: IRFBG30, SiHFBG30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 1000 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 80 • Fast Switching Qgs (nC) 10 • Ease of Paralleling 42 • Simple Drive Requirements Qgd (nC)

IRFBG30

Abstract: IRFBG30PBF SiHFBG30-E3 81145 RD-170 SiHFBG30
Contextual Info: IRFBG30, SiHFBG30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 1000 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 80 • Fast Switching Qgs (nC) 10 • Ease of Paralleling 42 • Simple Drive Requirements Qgd (nC) Configuration

IRFBG30

Contextual Info: IRFBG30, SiHFBG30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 1000 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 80 • Fast Switching Qgs (nC) 10 • Ease of Paralleling 42 • Simple Drive Requirements Qgd (nC)

irfbg30

Contextual Info: IRFBG30, SiHFBG30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 1000 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 80 • Fast Switching Qgs (nC) 10 • Ease of Paralleling 42 • Simple Drive Requirements Qgd (nC) Configuration

IRFBC20

Abstract: IRF9511 IRFBE32
Contextual Info: International I» i Rectifier HEXFET Power MOSFETs Plastic Insertale Package TO-220 N-Channel Part Number V os Drain Source Voltage Volts RDS(on) On-State Resistance (Ohms) I q Continuous Drain Current 25°C Case (Amps) •DM Pu'“ Drain Current (Amps)

IRF4905 equivalent

Abstract: 800v irf IRFBE30 equivalent transistor equivalent irf510 IRF3415 equivalent IRF3205 IRF1010E IRFP064N equivalent IRFBg30 equivalent IRF3205 equivalent
Contextual Info: International Rectifier The HEXFET Through Hole Navigator COLOR CODING: EXISTING Products NEW Products released to production in last 6-9 months UPCOMING Products to be released within next 3-4 months POTENTIAL Products no current plans. see bus.mgmt.

1RFPC50

Abstract: 1RFPC50LC IRF840LC IRlz24n IRFz44n IRF540n 1RFPc
Contextual Info: _ I n t e r n a t i o n a l R e c t if ie r HEXFET Power MOSFETS VIWQOSS Drakvto-Sourc* BreakdownVokaga Vota Pot Numbar *0 S M OnSM» Rotatami (Oh"») loConlinuoui * mc DnfciCunwK Qg Total MuThaimal GataCharga AvAtanct

irf510 switch

Abstract: IRFBA40N60C 800v irf IRL2505 IRF634L IRF540NL IRF520N IRFU9024N IRFU3910 IRL3215
Contextual Info: International Rectifier The HEXFET Through Hole Navigator COLOR CODING: EXISTING Products NEW Products released to production in last 6-9 months UPCOMING Products to be released within next 3-4 months POTENTIAL Products no current plans. see bus.mgmt.

irf1010e equivalent

Abstract: irfp250n equivalent IRF744 equivalent IRFP260n equivalent IRF9540N equivalent IRF730A equivalent IRFBE30 equivalent irfp260n IRF4905 equivalent IRFU9120 equivalent
Contextual Info: International Rectifier MOSFETs MOSFETs Continued HEXFETª Power MOSFETs Ñ TO-220AB (continued) N-Channel (continued) Mfr.Õs Type IRFZ24N* IRF1010E* IRFZ44E* IRFZ34E* IRFZ14* IRF2807* IRF3710* IRF1310N* IRF540N* IRF530N* IRF520N* IRF510* IRF3415* IRF640N

IRF460 in TO220

Abstract: IRF09110 IRF448 of IRF9540 and IRF540 irf460 switching irf460 to247 IRF250 TO-247 IRF244 Application of irf250 IRFD9120 N CHANNEL
Contextual Info: HEXFET Power MOSFETs Products From IR FullPak N-Channel FullPak Fully-isolated HEXFETs from the heatsink/enclosure , then the FullPak is for you. Until now, semiconductors were insulated from grounded heatsinks with insulating w ashers and nylon screws. Improper Installation of

FL110

Abstract: LL110 irf7408 lr014 IRC540 equivalent IRL1Z14G IRFC024 IRFBE30 equivalent IRFCG50 irfbc10lc
Contextual Info: H EXFET Other Products from IR SOT-89 N-Channel V BR q s s Drain-to-Source ROS(on) Part Breakdown On-State Number Voltage Resistance (Volt) (Ohms) IRFS1Z0 100 Power MOSFETs Surface Mount Iq Continuous Drain Current 25°C (Amps) 2.4 0.82 Iq Continuous RthJAMax P d @ T c = 25°C Case

Contextual Info: 24 July 2008 Data Sheet No. PD60358 IRMD2336DJ 3 PHASE GATE DRIVER IC REFERENCE DESIGN KIT IRS2336DJ GATE DRIVER IC FEATURES • • • • • • • • • • • • • • • • Drives up to six IGBT/MOSFET power devices Gate drive supplies up to 20 V per channel

IRMD2336DJ

Abstract: International Rectifier IRFBG30 transistor 1000V TO220 3,1 A JK55B-100-8 circuit diagram of smps 400w DESKTOP N5RL20 schematic diagram 100v dc motor speed controller SMD fuse P110 Circuit diagram of 1W LED drive input 220vac PRPN082PAEN
Contextual Info: 24 July 2008 Data Sheet No. PD60358 IRMD2336DJ 3 PHASE GATE DRIVER IC REFERENCE DESIGN KIT IRS2336DJ GATE DRIVER IC FEATURES • • • • • • • • • • • • • • • • Drives up to six IGBT/MOSFET power devices Gate drive supplies up to 20 V per channel

Contextual Info: 24 July 2008 Data Sheet No. PD60359 IRMD26310DJ 3 PHASE GATE DRIVER IC REFERENCE DESIGN KIT IRS26310DJ GATE DRIVER IC FEATURES • • • • • • • • • • • • • • • • • Drives up to six IGBT/MOSFET power devices Gate drive supplies up to 20 V per channel

SMD fuse P110

Abstract: schematic diagram 100v dc motor speed controller IC L7805cv circuit diagram of smps 400w DESKTOP LCL-UF1125 IRS2631 flyback transformer high-voltages smd smps 230v ac to 18v dc tyco igbt p11 induction motor speed control circuits
Contextual Info: 24 July 2008 Data Sheet No. PD60359 IRMD26310DJ 3 PHASE GATE DRIVER IC REFERENCE DESIGN KIT IRS26310DJ GATE DRIVER IC FEATURES • • • • • • • • • • • • • • • • • Drives up to six IGBT/MOSFET power devices Gate drive supplies up to 20 V per channel