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    IRFD123 Search Results

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    IRFD123 Price and Stock

    Vishay Siliconix IRFD123PBF

    MOSFET N-CH 100V 1.3A 4DIP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFD123PBF Bulk 3,394 1
    • 1 $1.93
    • 10 $1.23
    • 100 $1.93
    • 1000 $0.60233
    • 10000 $0.54256
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    Rochester Electronics LLC IRFD123

    MOSFET N-CH 100V 1.3A 4DIP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFD123 Tube 346
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.87
    • 10000 $0.87
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    Vishay Intertechnologies IRFD123PBF

    Trans MOSFET N-CH 100V 1.3A 4-Pin HVMDIP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical IRFD123PBF 2,500 20
    • 1 -
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    • 10000 $0.427
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    Newark IRFD123PBF Bulk 89 1
    • 1 $1.27
    • 10 $0.87
    • 100 $0.587
    • 1000 $0.512
    • 10000 $0.512
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    TTI IRFD123PBF Tube 2,500 50
    • 1 -
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    • 100 $0.6
    • 1000 $0.5
    • 10000 $0.5
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    TME IRFD123PBF 1
    • 1 $1.384
    • 10 $0.681
    • 100 $0.542
    • 1000 $0.452
    • 10000 $0.429
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    EBV Elektronik IRFD123PBF 13 Weeks 100
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    Vishay Siliconix IRFD123

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics IRFD123 20,300 4
    • 1 -
    • 10 $1.3125
    • 100 $0.4922
    • 1000 $0.3675
    • 10000 $0.3412
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    Quest Components IRFD123 16,000
    • 1 $3.27
    • 10 $3.27
    • 100 $3.27
    • 1000 $1.7985
    • 10000 $1.635
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    IRFD123 3,176
    • 1 $4.9773
    • 10 $4.9773
    • 100 $4.9773
    • 1000 $2.4887
    • 10000 $2.4887
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    IRFD123 240
    • 1 $1.75
    • 10 $1.75
    • 100 $0.525
    • 1000 $0.525
    • 10000 $0.525
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    IRFD123 80
    • 1 $3.15
    • 10 $3.15
    • 100 $2.1
    • 1000 $2.1
    • 10000 $2.1
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    International Rectifier IRFD123

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics IRFD123 250
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    Quest Components IRFD123 54
    • 1 $1.32
    • 10 $1.1
    • 100 $0.792
    • 1000 $0.792
    • 10000 $0.792
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    IRFD123 1
    • 1 $3.416
    • 10 $3.416
    • 100 $3.416
    • 1000 $3.416
    • 10000 $3.416
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    Find more IRFD123 price and stock on Findchips.com

    IRFD123 Datasheets (22)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRFD123 International Rectifier N-Channel Power MOSFETs Original PDF
    IRFD123 General Electric Power Transistor Data Book 1985 Scan PDF
    IRFD123 General Electric (IRFD122) Field Effect Power Transistor Scan PDF
    IRFD123 Harris Semiconductor (IRFD120 / IRFD121 / IRFD122 / IRFD123) N-Channel Power MOSFETs Scan PDF
    IRFD123 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRFD123 International Rectifier HEXFET Power MOSFETs Scan PDF
    IRFD123 International Rectifier Plastic Package HEXFETs Scan PDF
    IRFD123 International Rectifier N-Channel Power MOSFETs Scan PDF
    IRFD123 Motorola European Master Selection Guide 1986 Scan PDF
    IRFD123 Motorola (IRFD120) TMOS Field Effect Transistor / Dual In-Line Package Scan PDF
    IRFD123 Motorola Switchmode Datasheet Scan PDF
    IRFD123 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    IRFD123 Unknown FET Data Book Scan PDF
    IRFD123 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRFD123 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    IRFD123 Siliconix (IRFD120) N-Channle Enhancement Mode Transistors Scan PDF
    IRFD123 Vishay Siliconix Shortform Siliconix Datasheet Short Form PDF
    IRFD123PBF Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 1.3A 4-DIP Original PDF
    IRFD123(R) Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRFD123R Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF

    IRFD123 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SiHFD123

    Abstract: No abstract text available
    Text: IRFD123, SiHFD123 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 100 RDS(on) (Ω) VGS = 10 V Available • Repetitive Avalanche Rated 0.27 RoHS* Qg (Max.) (nC) 16 • For Automatic Insertion Qgs (nC) 4.4 • End Stackable


    Original     		PDF IRFD123, SiHFD123 12-Mar-07

    Untitled

    Abstract: No abstract text available
    Text: IRFD123_RC, SiHFD123_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF IRFD123 SiHFD123 AN609, CONFIGURA5-Oct-10 3013m 6764u 6401m 9270m

    Untitled

    Abstract: No abstract text available
    Text: IRFD123 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)80 V(BR)GSS (V)20 I(D) Max. (A)1.1# I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)4.4# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)1.0# Minimum Operating Temp (øC)-55õ


    Original     		PDF IRFD123

    90161

    Abstract: No abstract text available
    Text: IRFD123, SiHFD123 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 100 RDS(on) () VGS = 10 V Available • Repetitive Avalanche Rated 0.27 RoHS* Qg (Max.) (nC) 16 • For Automatic Insertion Qgs (nC) 4.4 • End Stackable


    Original     		PDF IRFD123, SiHFD123 2002/95/EC 11-Mar-11 90161

    SiHFD123

    Abstract: No abstract text available
    Text: IRFD123, SiHFD123 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 100 RDS(on) (Ω) VGS = 10 V Available • Repetitive Avalanche Rated 0.27 RoHS* Qg (Max.) (nC) 16 • For Automatic Insertion Qgs (nC) 4.4 • End Stackable


    Original     		PDF IRFD123, SiHFD123 18-Jul-08

    IRFD123

    Abstract: No abstract text available
    Text: IRFD123, SiHFD123 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 100 RDS(on) () VGS = 10 V Available • Repetitive Avalanche Rated 0.27 RoHS* Qg (Max.) (nC) 16 • For Automatic Insertion Qgs (nC) 4.4 • End Stackable


    Original     		PDF IRFD123, SiHFD123 2002/95/EC 18-Jul-08 IRFD123

    Untitled

    Abstract: No abstract text available
    Text: PD - 97015 IRFD123 Document Number: 90161 06/09/05 www.vishay.com 1 IRFD123 Document Number: 90161 www.vishay.com 2 IRFD123 Document Number: 90161 www.vishay.com 3 IRFD123 Document Number: 90161 www.vishay.com 4 IRFD123 Document Number: 90161 www.vishay.com


    Original     		PDF IRFD123 08-Mar-07

    Untitled

    Abstract: No abstract text available
    Text: IRFD123, SiHFD123 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 100 RDS(on) () VGS = 10 V Available • Repetitive Avalanche Rated 0.27 RoHS* Qg (Max.) (nC) 16 • For Automatic Insertion Qgs (nC) 4.4 • End Stackable


    Original     		PDF IRFD123, SiHFD123 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: IRFD123, SiHFD123 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 100 RDS(on) () VGS = 10 V Available • Repetitive Avalanche Rated 0.27 RoHS* Qg (Max.) (nC) 16 • For Automatic Insertion Qgs (nC) 4.4 • End Stackable


    Original     		PDF IRFD123, SiHFD123 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    IRFD123

    Abstract: IRFD120 HARRIS IRFD120 IRFD121 IRFD122 TA17401 TB334
    Text: IRFD120, IRFD121, IRFD122, IRFD123 Semiconductor 1.3A and 1.1A, 80V and 100V, 0.30 and 0.40 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 1.3A and 1.1A, 80V and 100V • Linear Transfer Characteristics These are advanced power MOSFETs designed, tested, and


    Original     		PDF IRFD120, IRFD121, IRFD122, IRFD123 IRFD123 IRFD120 HARRIS IRFD120 IRFD121 IRFD122 TA17401 TB334

    Untitled

    Abstract: No abstract text available
    Text: IRFD123, SiHFD123 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 100 RDS(on) () VGS = 10 V Available • Repetitive Avalanche Rated 0.27 RoHS* Qg (Max.) (nC) 16 • For Automatic Insertion Qgs (nC) 4.4 • End Stackable


    Original     		PDF IRFD123, SiHFD123 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    IRFD123

    Abstract: No abstract text available
    Text: PD - 97015 IRFD123 Document Number: 90161 06/09/05 www.vishay.com 1 IRFD123 Document Number: 90161 www.vishay.com 2 IRFD123 Document Number: 90161 www.vishay.com 3 IRFD123 Document Number: 90161 www.vishay.com 4 IRFD123 Document Number: 90161 www.vishay.com


    Original     		PDF IRFD123 12-Mar-07 IRFD123

    IRFD123PBF

    Abstract: IRFD123
    Text: IRFD123, SiHFD123 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 100 RDS(on) (Ω) VGS = 10 V Available • Repetitive Avalanche Rated 0.27 RoHS* Qg (Max.) (nC) 16 • For Automatic Insertion Qgs (nC) 4.4 • End Stackable


    Original     		PDF IRFD123, SiHFD123 2002/95/EC 18-Jul-08 IRFD123PBF IRFD123

    IRFD123PBF

    Abstract: IRFD123 SiHFD123
    Text: IRFD123, SiHFD123 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 100 RDS(on) (Ω) VGS = 10 V Available • Repetitive Avalanche Rated 0.27 RoHS* Qg (Max.) (nC) 16 • For Automatic Insertion Qgs (nC) 4.4 • End Stackable


    Original     		PDF IRFD123, SiHFD123 18-Jul-08 IRFD123PBF IRFD123

    MSC2404

    Abstract: MPF3821 BC237 MPS8093 BCY72 MMBF4856 MAD130P MPS3866 bcy71 ALTERNATIVE BSS72
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP RF Amplifier Transistor Surface Mount MSA1022-CT1 Motorola Preferred Device COLLECTOR 3 3 2 1 2 BASE 1 EMITTER MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage VCBO – 30 Vdc Collector–Emitter Voltage


    Original     		PDF MSA1022-CT1 Emitte218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 MPF3821 BC237 MPS8093 BCY72 MMBF4856 MAD130P MPS3866 bcy71 ALTERNATIVE BSS72

    IRF0110

    Abstract: IRF0120 IRFD9123 irfu320 THOMSON DISTRIBUTOR 58e d IRFD113 IRFD1Z0 IRFD9014 IRFU121 irfu310
    Text: THOMSON/ DISTRIBUTOR SÄE I • 1ClEbB73 0 0 0 S 8 0 0 International io n Rectifier 7SS ■ HEXFET Power MOSFETs Plastic Insertable Package HEXDIP N-Channel Vqs Drain Source Voltage Volts) Part Number IRFD015 IRFD014 IRFD025 IRFD024 IRFD1Z3 IRFD113 IRFD123


    OCR Scan     		PDF IRFD015 IRFD014 IRFD025 IRFD024 M0-001AN IRFD113 IRFD123 IRF0110 IRF0120 IRFD213 IRFD9123 irfu320 THOMSON DISTRIBUTOR 58e d IRFD1Z0 IRFD9014 IRFU121 irfu310

    1RFD120

    Abstract: TRANSISTOR IRFD120
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA IRFD120 IRFD123 TMOS Field Effect Transistor Dual In-Line Package N-Channel Enhancement Mode • Ideal for Peripheral Control Applications • Intermediate 1 Watt Power Capability • Standard DIP Outline TMOS FET TRANSISTORS


    OCR Scan     		PDF IRFD120 IRFD123 1RFD120 1RFD120 TRANSISTOR IRFD120

    IRFD123

    Abstract: D120 IRFD120 if1070 IRFD 120 IRFD 123
    Text: Tem ic IRFD120/123 Siliconix N-Channel Enhancement-Mode Transistors Product Summary Part Num ber V BR DSS 00 rDS(on) (Ö ) I d (A) IRFD120 100 0.3 1.3 IRFD123 60 0.4 1.1 D D Top View 6 s N-Channel M OSFET Absolute Maximum Ratings (Ta = 25°C Unless Otherwise Noted)


    OCR Scan     		PDF IRFD120/123 IRFD120 IRFD123 IK1D123 -55DC P-36852â 25C--7// D120 if1070 IRFD 120 IRFD 123

    irf0014

    Abstract: IRF09014 IRF0220 IRF0024 IRF09120 INTERNATIONAL RECTIFIER 9439 IRFD110 IRF0110 INTERNATIONAL RECTIFIER 9516 irf09024
    Text: PLASTIC PACKAGE HEXFETs ~ INTERNATIONAL SbE RECT IFIER D INTERNATIONAL r e c t i f i e r IOR 4äSSM55 0010554 1 • HEXDIpTM Package N-CHANNEL Typos Vos R d S ON (max) Ip cont >0M Pd TC - 25°C pulsed max A W Sì IRFD024 ' IRFD02S IRF0014 IRFQ015 60 IRFD123


    OCR Scan     		PDF QQ1Q554 IRF0024 IRFD025 IRF0014 IRF0015 IRFD123 IRF0113 IRFD120 IRFD110 IRF0223 IRF09014 IRF0220 IRF09120 INTERNATIONAL RECTIFIER 9439 IRF0110 INTERNATIONAL RECTIFIER 9516 irf09024

    irfd121

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA IR FD 120 IRFD121 IRFD122 IRFD123 Advance Information S m all-S ig n al T M O S Field E ffe c t Transistors N-Channel Enhancem ent-M ode S ilicon G ate TM O S 4-Pin DIP 1 WATT TM O S FETs rDS{on = 0 3 0 H M 100 VOLTS


    OCR Scan     		PDF IRFD121 IRFD122 IRFD123

    irfd123

    Abstract: 2501a IRFD120R IRFD121R IRFD122R IRFD123R IRF012
    Text: Rugged Pow er M O S F E T s_ File Number 2036 IRFD120R, IRFD121R, IRFD122R, IRFD123R Avalanche Energy Rated N-Channel Power MOSFETs 1.3A and 1.1A, 60V-100V ros on = 0.300 and 0.400 N -C H A N N E L E N H A N C E M E N T M O D E Features:


    OCR Scan     		PDF IRFD120R, IRFD121R, IRFD122R, IRFD123R 0V-100V IRFD122R IRFD123R irfd123 2501a IRFD120R IRFD121R IRF012

    IRFD120

    Abstract: IRFD121 IRFD122 IRFD123 irfd1201
    Text: Standard Power MOSFETs - IRFD120, IRFD121, IRFD122, IRFD123 File Number 2315 Power M O S Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistore N -C H A N N EL E N H A N C EM EN T M O DE 1.1 A and 1.3 A, 60 V - 100 V rDsfoni= 0.3 O and 0.4 O


    OCR Scan     		PDF IRFD120, IRFD121, IRFD122, IRFD123 IRFD123 IRFD120 IRFD121 IRFD122 irfd1201

    irfd120

    Abstract: No abstract text available
    Text: T e m ic siiiconix_IRFD120/123 N-Channel Enhancement-Mode Transistors Product Summary Part Number IRFD120 IRFD123 V BR DSS (V) 100 60 I d (A) 1.3 1.1 r DS(on) (Q ) 0.3 0.4 U 4-Pin DIP a GŒ s Œ o It ^ Top View Ô s N-Channel MOSFET


    OCR Scan     		PDF IRFD120/123 IRFD120 IRFD123 RFD120 P-36852-- P-36852--Rev. 06/06/fH)

    MO-001

    Abstract: TO-251 Outline TO-251AA
    Text: International j«»|Rectifier HEXFET Power M O SFE T s Plastic Insertable Package HEXDIP N-Channel Part Number Vos Draln Source Voltage Volts IRFD015 IRFD014 IRFD025 IRFD024 60 IRFD1Z3 IRFD113 IRFD123 80 IRFD1Z0 IRFD110 IRFD120 100 IRFD213 IRF0223 IRFD210


    OCR Scan     		PDF IRFD015 IRFD014 IRFD025 IRFD024 IRFD113 IRFD123 IRFD110 IRFD120 IRFD213 IRF0223 MO-001 TO-251 Outline TO-251AA