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    IRFF332, Search Results

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    IRFF332, Price and Stock

    International Rectifier IRFF332

    TRANSISTOR,MOSFET,N-CHANNEL,400V V(BR)DSS,3A I(D),TO-205AF
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components IRFF332 20
    • 1 $1.1715
    • 10 $0.9763
    • 100 $0.7029
    • 1000 $0.7029
    • 10000 $0.7029
    Buy Now
    Rochester Electronics IRFF332 99 1
    • 1 $0.5833
    • 10 $0.5833
    • 100 $0.5483
    • 1000 $0.4958
    • 10000 $0.4958
    Buy Now

    IRFF332, Datasheets (15)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRFF332 General Electric Power Transistor Data Book 1985 Scan PDF
    IRFF332 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRFF332 International Rectifier N-Channel Power MOSFET in a TO-39 package 400 Volts, 1.0 Ohm Scan PDF
    IRFF332 International Rectifier TO-39 Package N-Channel HEXFET Scan PDF
    IRFF332 International Rectifier N-Channel Power MOSFETs Scan PDF
    IRFF332 International Rectifier TO-39 N-Channel HEXFET Power MOSFETs Scan PDF
    IRFF332 Motorola European Master Selection Guide 1986 Scan PDF
    IRFF332 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRFF332 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    IRFF332 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    IRFF332 Unknown FET Data Book Scan PDF
    IRFF332 Siliconix N-Channel Enhancement Mode Transistors TO-205AF Scan PDF
    IRFF332R Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRFF332R International Rectifier Rugged Series Power MOSFETs - N-Channel Scan PDF
    IRFF332R Unknown Shortform Datasheet & Cross References Data Short Form PDF

    IRFF332, Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRFF332

    Abstract: IRFF333
    Text: FUT FIELD EFFECT POWER TRANSISTOR IRFF332,333 3.0 AM PERES 400, 350 VOLTS BP S O N = 1-5 n Preliminary This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­


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    PDF IRFF332 IRFF333

    lt 332 diode

    Abstract: 4242 DM 4243 dm IRFF330 IRFF331 IRFF332 IRFF333 diode 331 t2235 QA-750
    Text: 1 &£ D SILICONIX INC • Ö 2 5 4 7 3 5 GDlMflEl b ■ IRFF330/331/332/333 C T 'S ilico n ix Jm W incorporated N-Channel Enhancement Mode Transistors T TCJ-205AF - ^ - o q . BOTTOM VIEW PRODUCT SUMMARY PART NUMBER V BR|DSS IRFF330 400 1.0 3.5 IRFF331 350


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    PDF IRFF330/331/332/333 IRFF330 IRFF331 IRFF332 IRFF333 O-205AF lt 332 diode 4242 DM 4243 dm diode 331 t2235 QA-750