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International Rectifier IRFF332 TRANSISTOR,MOSFET,N-CHANNEL,400V V(BR)DSS,3A I(D),TO-205AF
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	IRFF332		20			1 $1.1715 10 $0.9763 100 $0.7029 1000 $0.7029 10000 $0.7029	Buy Now
Rochester Electronics	IRFF332		99		1	1 $0.5833 10 $0.5833 100 $0.5483 1000 $0.4958 10000 $0.4958	Buy Now

IRFF332 Datasheets (15)

Part	Manufacturer	Description	Datasheet Type	PDF
IRFF332	General Electric	Power Transistor Data Book 1985	Scan	PDF
IRFF332	Harris Semiconductor	Power MOSFET Data Book 1990	Scan	PDF
IRFF332	International Rectifier	N-Channel Power MOSFET in a TO-39 package 400 Volts, 1.0 Ohm	Scan	PDF
IRFF332	International Rectifier	TO-39 Package N-Channel HEXFET	Scan	PDF
IRFF332	International Rectifier	N-Channel Power MOSFETs	Scan	PDF
IRFF332	International Rectifier	TO-39 N-Channel HEXFET Power MOSFETs	Scan	PDF
IRFF332	Motorola	European Master Selection Guide 1986	Scan	PDF
IRFF332	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
IRFF332	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF
IRFF332	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF
IRFF332	Unknown	FET Data Book	Scan	PDF
IRFF332	Siliconix	N-Channel Enhancement Mode Transistors TO-205AF	Scan	PDF
IRFF332R	Harris Semiconductor	Power MOSFET Data Book 1990	Scan	PDF
IRFF332R	International Rectifier	Rugged Series Power MOSFETs - N-Channel	Scan	PDF

IRFF332R	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF

IRFF332 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: IRFF332 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)400 V(BR)GSS (V)20 I(D) Max. (A)3.0# I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)12# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)25# Minimum Operating Temp (øC)-55õ	Original	PDF	IRFF332
2N6796 Abstract: 2N6796U 2N6798 2N6798U 2N6800 2N6800U 2N6802 2N6802U c 2811 transistor irff130 marking Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 09 March 1998 INCH-POUND MIL-PRF-19500/557F 09 December 1997 SUPERSEDING MIL-S-19500/557E 9 December 1994 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON	Original	PDF	MIL-PRF-19500/557F MIL-S-19500/557E 2N6796, 2N6796U, 2N6798, 2N6798U, 2N6800, 2N6800U, 2N6802, 2N6802U 2N6796 2N6796U 2N6798 2N6798U 2N6800 2N6800U 2N6802 2N6802U c 2811 transistor irff130 marking
sgsp531 Abstract: 2sk76 irf33 unitrode VN0340N5 MTD1N40-1 sfn02806 stm231 stm331 650P Text: MOSFET Item Number Part Number Manufacturer V BR OSS (V) loss Max (A) Po Max (W) ros (on) (Ohms) 9FS VGS(th) Min Max (V) (5) 'sa C Max (F) tr Max (5) tf Max (5) Toper Max (OC) Package Style 150 150 J 150 J 150 150 150 J 150 J 150 A 150 J 150 J TO-39 TO-92	Original	PDF	VN0640N2 TX106 IRF712 VN0340N2 MTD1N40 MTD1N40-1 RFP1N40 IRFF312 IRFF312 sgsp531 2sk76 irf33 unitrode VN0340N5 sfn02806 stm231 stm331 650P
MOSFET cross-reference Abstract: 2N6798 557h 2N6796 2N6796U 2N6798U 2N6800 2N6800U 2N6802 2N6802U Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 24 September 2010. MIL-PRF-19500/557H 24 June 2010 SUPERSEDING MIL-PRF-19500/557G 5 November 2003 * PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON	Original	PDF	MIL-PRF-19500/557H MIL-PRF-19500/557G 2N6796, 2N6796U, 2N6798, 2N6798U, 2N6800, 2N6800U, 2N6802, 2N6802U MOSFET cross-reference 2N6798 557h 2N6796 2N6796U 2N6798U 2N6800 2N6800U 2N6802 2N6802U
IRF3303 Abstract: OA 161 diode IRFF330 IRFF331 IRFF332 IRFF333 Text: - Standard Power MOSFETs File Number IRFF330, IRFF331, IRFF332, IRFF333 1893 N-Channel Enhancement-Mode Power Field-Effect Transistors 3.0A and 3.5A, 350V - 400V rD S o n = 1.00 and 1.50 N-CHANNEL ENHANCEMENT MODE Features: •	OCR Scan	PDF	IRFF330, IRFF331, IRFF332, IRFF333 IRFF332 IRFF333 IFF33 IRF3303 OA 161 diode IRFF330 IRFF331
IRFF332 Abstract: IRFF333 Text: FUT FIELD EFFECT POWER TRANSISTOR IRFF332,333 3.0 AM PERES 400, 350 VOLTS BP S O N = 1-5 n Preliminary This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged	OCR Scan	PDF	IRFF332 IRFF333
2029 mosfet Abstract: ic l00a IRFF330R IRFF331R IRFF332R IRFF333R Text: _ Rugged Power MOSFETs File Num ber 2029 IRFF330R, IRFF331R, IRFF332R, IRFF333R Avalanche Energy Rated N-Channel Power MOSFETs 3.0A and 3.5A, 350V-400V rDs on = 1.00 and 1.50 N-CHANNEL ENHANCEMENT MODE Features: • Single pulse avalanche energy rated	OCR Scan	PDF	IRFF330R, IRFF331R, IRFF332R, IRFF333R 50V-400V 2CS-4265S IRFF332R IRFF333R 2029 mosfet ic l00a IRFF330R IRFF331R
SMM70N05 Abstract: irff31z MOD200A SMM11P20 SMM70N10 SMP2P20 251G FF323 IRFF310 SILICONIX 4800 Text: - H f M tt % ± Vd s or € $ Vg s Vd g V 1R F F 310 IRFF311 IRFF312 IRFF313 1RFF320 IRFF321 IRFF322 IRFF323 IRFF330 IRFF331 IRFF332 IRFF333 IR FF420 IRFF421 IRFF422 IRFF423 IR F M 3 0 IRFF431 IRFF432 IR FF433 IR F F 9 1 10 1R F F 9 1 11 1R F F 9 112 IR FF9113	OCR Scan	PDF	IRFF310 O-205AF FF312 FF322 FF323 2520P10 SMM60N05 T0-204AE SMM70N05 irff31z MOD200A SMM11P20 SMM70N10 SMP2P20 251G FF323 IRFF310 SILICONIX 4800
SMM70N06 Abstract: SMM70N05 SMP2P20 SMM60N05 SILICONIX 4800 SMM11P20 IBFF333 IRFF313 SMD10P05L IRFF320 Text: - 324 - f ft A £ Ta=25‘C Vds Vg s or * Vd g Id t M € ± € IRFF312 IRFF313 IRFF320 IRFF321 IRFF322 IRFF323 IRFF33Q IRFF331 IRFF332 IRFF333 IRFF430 IRFF431 IRFF432 IRFF433 MOD1QOA/B/C MOD200A/B/C MQD400A/B/C MOD5QOA/B/C SMD10P05 SMD10P05L SMD15NQ5	OCR Scan	PDF	IRFF31Z IRFF313 IRFF320 2020P10 SMM60N05 T0-204AE SMM70N05 O-204AE SMM70N06 SMM70N10 SMP2P20 SILICONIX 4800 SMM11P20 IBFF333 SMD10P05L
irff330 Abstract: No abstract text available Text: yRgs IRFF330, IRFF331, IRFF332, IRFF333 3.0A and 3.5A, 350V and 400V, 1.0 and 1.5 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 3.0A and 3.5A, 350V and 400V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power	OCR Scan	PDF	IRFF330, IRFF331, IRFF332, IRFF333 irff330
2N6788 motorola Abstract: vmos vmos fet MFE910 n-channel vmos motorola MFE930 2N6659 2N6661 IRFF110 IRFF111 Text: FIELD-EFFECT TRANSISTORS continued Small-Signal TMOS TMOS Power MOSFETs Pow er M O SFETS, M o to ro la tra d e m a rk T M O S , a re FET transistors with an oxide insulated gate which controls vertical c u rren t flow. This basic description fits a n um ber of structures and process titles	OCR Scan	PDF	IRFF431 IRFF432 IRFF433 2N6782 2N6784 2N6786 2N6788 2N6790 2N6792 2N6794 2N6788 motorola vmos vmos fet MFE910 n-channel vmos motorola MFE930 2N6659 2N6661 IRFF110 IRFF111
IRF09120 Abstract: 251G FF323 IRFF310 F9122 IRFF130 IRF0120 Text: - f M % tt ± $ H V ds or € Vg s T a = 2 5 l3 Id Po a Vgs th ) I dss I gs s m tf ï & ï Ds(on) Vd s = ’l ï (V) * /CH * /CH (A) (W) (nA) Vgs (V) C m A) V ds (V) m in max (V) (V) I d (on) C is s g fs Coss C rss $1- B m % V g s =0 (max) Id (mA) ♦ typ	OCR Scan	PDF	IRFF310 O-205AF FF312 FF322 FF323 25RFF230 IRFF231 IRF09120 251G FF323 IRFF310 F9122 IRFF130 IRF0120
EATON CM20A Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268 Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid ing complete service, fast delivery and in-depth inventory. Our main	OCR Scan	PDF
MOSFET 4465 Abstract: 4465 mosfet Text: HARRIS A ugust IRFF330/331/332/333 IRFF330R/331R /332R /333R N -Channel Power MOSFETs Avalanche Energy Rated* 1991 Package Features TO-2Q5AF • 3.0A and 3.5A, 350V - 400V • rDS on = 1 o n and 1-s n • Single Pulse Avalanche Energy Rated* GATE SOURCE • SOA is Power-Disslpatlon Limited	OCR Scan	PDF	IRFF330/331/332/333 IRFF330R/331R /332R /333R IRFF330, IRFF331, IRFF332, IRFF333 IRFF330R, IRFF331R, MOSFET 4465 4465 mosfet

irf460 to-247 Abstract: IRF450R IRF331R IRF460 IRF840R IRF341R irf362 IRFP450R THOMSON DISTRIBUTOR 58e d irfp462 Text: THOnSON/ DISTRIBUTOR Power MOSFETs SflE D • T02bñ73 0G0S711 bST ■ T C S K - _ _ Rugged-Series Power MOSFETs — N-Channel continued Package ft JP Maximum Ratinas BV d s S (V) ■d s (A) 'DS(O N) OHMS eAS (mj) 350	OCR Scan	PDF	0G0S711 O-204 to-205 O-220 O-247 irf331r irf343r irf341r irf353r irf351r irf460 to-247 IRF450R IRF460 IRF840R irf362 IRFP450R THOMSON DISTRIBUTOR 58e d irfp462
IRF 544 N MOSFET Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511 Text: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no	OCR Scan	PDF
IRF1401 Abstract: IRF4311 IRF1501 IRF4431 IRF4411 IRF3411 IRF7431 IRF8331 IRF8411 IRF6221 Text: C T ’ SiR conix in c o r p o r a te d Industry Standard Commercial MOSFETs Part Number V BR^DSS Id (A rDS(ON) (A) Package Part Number V(BR^[)SS Id (A) rDS(ON) (A) Package IRF1301 100 14 0.18 TO-2G4 IRF432’ 500 4.0 2.0 T0-204 IRF1311 60 14 0.18 T0-204	OCR Scan	PDF	IRF1301 IRF1311 IRF1321 IRF1331 IRF1401 1RF1411 IRF1421 IRF1431 IRF1501 IRF1511 IRF4311 IRF4431 IRF4411 IRF3411 IRF7431 IRF8331 IRF8411 IRF6221
lt 332 diode Abstract: 4242 DM 4243 dm IRFF330 IRFF331 IRFF332 IRFF333 diode 331 t2235 QA-750 Text: 1 &£ D SILICONIX INC • Ö 2 5 4 7 3 5 GDlMflEl b ■ IRFF330/331/332/333 C T 'S ilico n ix Jm W incorporated N-Channel Enhancement Mode Transistors T TCJ-205AF - ^ - o q . BOTTOM VIEW PRODUCT SUMMARY PART NUMBER V BR\|DSS IRFF330 400 1.0 3.5 IRFF331 350	OCR Scan	PDF	IRFF330/331/332/333 IRFF330 IRFF331 IRFF332 IRFF333 O-205AF lt 332 diode 4242 DM 4243 dm diode 331 t2235 QA-750
g371 Abstract: IRFF330 IRFF331 IRFF332 IRFF333 510 MOSFET EC07 CIRCUIT g371 Text: HE D \| MöSSMSa QGCHB'ìM 0 \| INTERNATIONAL Data Sheet No. PD-9.357E _ T-39-Û9 RECTIFIER INTERNATIONAL RECTIFIER HEXFET TRANSISTORS IÖR IRFF330 IRFF331 N-CHAIUNEL POWER MOSFETs TO-39 PACKAGE IRFF33S IRFF333 400 Volt, 1.0 Ohm HEXFET Features: The HEXFET technology is the key to International	OCR Scan	PDF	T-39-Ã G-376 g371 IRFF330 IRFF331 IRFF332 IRFF333 510 MOSFET EC07 CIRCUIT g371
irf840 rf Abstract: THOMSON DISTRIBUTOR IRF440 TO-247 irf350* to-247 package THOMSON 58E THOMSON DISTRIBUTOR 58e d IRF320 IRF322 irf420 IRF332 Text: THOnSON/ DISTRIBUTOR SflE 5 • TDEb&TB 0005707 ■ TCSK - Power MOSFETs IRF-Series Power MOSFETs — N-Channel Continued P a cka g e ^pr i » [j M a x im u m R a tin g s bvdss >d s (V) (A) rD S(O N ) O HM S 400 0 .3 0 0.40 0.40 0.50 1.15 1.30 1.35 1.50	OCR Scan	PDF	102bfi73 to-204 to-205 T0-220 O-247 IRF322 IRF320 IRF332 IRF330 IRF342 irf840 rf THOMSON DISTRIBUTOR IRF440 TO-247 irf350* to-247 package THOMSON 58E THOMSON DISTRIBUTOR 58e d IRF320 IRF322 irf420 IRF332
Untitled Abstract: No abstract text available Text: • i<302271 0 D 5 4 1 7 G flb2 ■ [g HARRIS HAS IRFF330/331/332/333 IRFF330R/331R/332R/333R N-Channel Power MOSFETs Avalanche Energy Rated* A u g u st 1991 Package Features TO-2Q5AF • 3 .0 A and 3 .5 A , 3S0V - 400V • rD S o n = 1-Oft and 1 -5 0 • S in g le P u lse A valan ch e En erg y R ated*	OCR Scan	PDF	IRFF330/331/332/333 IRFF330R/331R/332R/333R FF330, FF331, RFF332, FF333 IRFF330R, IRFF331R, FF332R /RFF333R
thyristor TAG 8506 Abstract: nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719 Text: TABLE OF CONTENTS Catalog Number 11Q New For 1989! • Over 7,900 New Products • 13 New M anufacturers PRODUCT INDICES tiamp*,'fminei forskSockets ' Solder Equipment endTtfob ] vriHp\< lint Equipment, Panel Meters, Aejulpmant, i A P R E M IE R C o m p an y	OCR Scan	PDF	11PM104 thyristor TAG 8506 nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719
THOMSON DISTRIBUTOR 58e d Abstract: 9026873 IRFF121 THOMSON 58E THOMSON 58E CASE OUTLINE THOMSON DISTRIBUTOR 2N6782 IRFF014 IRFF034 IRFF111 Text: THOMSON/ DISTRIBUTOR HEXFET SñE D • li^ J Rectifier Hermetic Package TO-39 N-Channel Part Number 1 RDS on On-State Resistance (Ohms) Ip Continuous Drain Current 25eC Case (Amps) 1dm Pul» Drain Current (Amps) Pq Max Power Dissipation (Watts) 25 65 15 25	OCR Scan	PDF	IRFF014 T0-205AF IRFF034 IRFF113 IRFF111 IRFF123 IRFF121 IRFF133 IRFF131 IRFF112 THOMSON DISTRIBUTOR 58e d 9026873 IRFF121 THOMSON 58E THOMSON 58E CASE OUTLINE THOMSON DISTRIBUTOR 2N6782 IRFF034 IRFF111
Untitled Abstract: No abstract text available Text: International ï» ! Rectifier HEXFET Power MOSFETs Hermetic Package TO-39 N-Channel Part Number V o s Drain Source Voltage Volts IRFF014 IRFF034 60 IRFF113 IRFF111 IRFF123 IRFF121 IRFF133 IRFF131 &DS(on) On-State Resistance (Ohms) I q Continuous Drain Current	OCR Scan	PDF	IRFF014 IRFF034 IRFF113 IRFF111 IRFF123 IRFF121 IRFF133 IRFF131 IRFF112 2N6782

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IRFF332 Price and Stock

International Rectifier IRFF332

IRFF332 Datasheets (15)

IRFF332 Datasheets Context Search

Untitled

2N6796

sgsp531

MOSFET cross-reference

IRF3303

IRFF332

2029 mosfet

SMM70N05

SMM70N06

irff330

2N6788 motorola

IRF09120

EATON CM20A

MOSFET 4465

irf460 to-247

IRF 544 N MOSFET

IRF1401

lt 332 diode

g371

irf840 rf

Untitled

thyristor TAG 8506

THOMSON DISTRIBUTOR 58e d

Untitled