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    IRFI530 Price and Stock

    Infineon Technologies AG IRFI530NPBF

    MOSFET N-CH 100V 12A TO220AB FP
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    DigiKey IRFI530NPBF Tube 6,018 1
    • 1 $2.03
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    • 1000 $0.64154
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    Avnet Americas IRFI530NPBF Tube 1,097 10 Weeks 50
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    IRFI530NPBF Bulk 16 Weeks, 3 Days 1
    • 1 $1.22
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    Mouser Electronics IRFI530NPBF 1,683
    • 1 $1.65
    • 10 $0.969
    • 100 $0.839
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    Verical IRFI530NPBF 18,000 537
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    IRFI530NPBF 16,320 537
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    IRFI530NPBF 5,784 12
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    IRFI530NPBF 3,171 71
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    IRFI530NPBF 2,000 2,000
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    Arrow Electronics IRFI530NPBF 5,793 10 Weeks 1
    • 1 $1.4152
    • 10 $0.8663
    • 100 $0.7591
    • 1000 $0.5643
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    Newark IRFI530NPBF Bulk 3,786 1
    • 1 $1.21
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    • 100 $0.812
    • 1000 $0.723
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    RS IRFI530NPBF Bulk 1
    • 1 $0.94
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    Bristol Electronics IRFI530NPBF 3,982
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    Rochester Electronics IRFI530NPBF 34,320 1
    • 1 $0.6211
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    • 1000 $0.5279
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    TME IRFI530NPBF 100 1
    • 1 $1.35
    • 10 $0.9
    • 100 $0.76
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    Chip 1 Exchange IRFI530NPBF 3,048
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    Chip1Stop IRFI530NPBF Tube 3,171
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    EBV Elektronik IRFI530NPBF 28,000 11 Weeks 2,000
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    New Advantage Corporation IRFI530NPBF 22,000 1
    • 1 -
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    • 10000 $0.85
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    Vishay Siliconix IRFI530GPBF

    MOSFET N-CH 100V 9.7A TO220-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFI530GPBF Tube 996 1
    • 1 $2.66
    • 10 $2.66
    • 100 $2.66
    • 1000 $0.87157
    • 10000 $0.775
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    Infineon Technologies AG IRFI530N

    MOSFET N-CH 100V 12A TO220AB FP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFI530N Tube 350
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    Vishay Siliconix IRFI530G

    MOSFET N-CH 100V 9.7A TO220-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFI530G Tube 1,000
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    • 1000 $1.8375
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    Vishay Intertechnologies IRFI530GPBF

    MOSFET N-CHANNEL 100V - Tape and Reel (Alt: IRFI530GPBF)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas IRFI530GPBF Reel 13 Weeks 1,000
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    • 1000 $0.775
    • 10000 $0.72941
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    Mouser Electronics IRFI530GPBF 1,976
    • 1 $2.42
    • 10 $1.24
    • 100 $1.12
    • 1000 $0.89
    • 10000 $0.886
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    TTI IRFI530GPBF Tube 1,000
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    • 10000 $0.78
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    TME IRFI530GPBF 1
    • 1 $0.729
    • 10 $0.549
    • 100 $0.497
    • 1000 $0.454
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    EBV Elektronik IRFI530GPBF 50 14 Weeks 50
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    Find more IRFI530 price and stock on Findchips.com

    IRFI530 Datasheets (17)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRFI530 International Rectifier FullPak - Fully Isolated HEXFET Scan PDF
    IRFI530A Fairchild Semiconductor Advanced Power MOSFET Original PDF
    IRFI530A Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRFI530A Fairchild Semiconductor Advanced Power MOSFET Scan PDF
    IRFI530G Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRFI530G Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 9.7A TO220FP Original PDF
    IRFI530G International Rectifier HEXFET Power Mosfet Scan PDF
    IRFI530G International Rectifier HEXFET Power MOSFET Scan PDF
    IRFI530G Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    IRFI530G Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRFI530GPBF Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 9.7A TO220FP Original PDF
    IRFI530N International Rectifier 100V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package; A IRFI530N with Standard Packaging Original PDF
    IRFI530N International Rectifier HEXFET Power MOSFET Original PDF
    IRFI530N Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRFI530N International Rectifier Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, N-Channel, Power, 100V, 11A, Pkg Iso TO-220 Fullpak Scan PDF
    IRFI530NPBF International Rectifier Original PDF
    IRFI530NPBF International Rectifier 100V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package; Similar to IRFI530N with Lead Free Packaging Original PDF

    IRFI530 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: IRFI530G Power MOSFET TO-220 FULLPAK D FEATURES • Isolated Package • High Voltage Isolation = 2.5 kVRMS t = 60 s; f = 60 Hz • Sink to Lead Creepage Distance = 4.8 mm • 175 °C Operating Temperature • Dynamic dV/dt Rating • Low Thermal Resistance


    Original     		PDF IRFI530G O-220

    IRF530N

    Abstract: No abstract text available
    Text: PD - 95419 IRFI530NPbF HEXFET Power MOSFET l l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free D VDSS = 100V RDS on = 0.11Ω G Description Fifth Generation HEXFETs from International Rectifier


    Original     		PDF IRFI530NPbF O-220 IRF530N I840G

    IRF530N

    Abstract: IRFI530N 4.5v to 100v input regulator
    Text: PD - 9.1353A IRFI530N PRELIMINARY HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D VDSS = 100V RDS on = 0.11Ω G Description ID = 12A


    Original     		PDF IRFI530N O-220 IRF530N IRFI530N 4.5v to 100v input regulator

    Untitled

    Abstract: No abstract text available
    Text: IRFI530G, SiHFI530G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • 175 °C Operating Temperature • Dynamic dV/dt Rating


    Original     		PDF IRFI530G, SiHFI530G O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: IRFI530G, SiHFI530G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • 175 °C Operating Temperature • Dynamic dV/dt Rating


    Original     		PDF IRFI530G, SiHFI530G O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    IRFI530GPBF

    Abstract: 58AB IRFI530G SiHFI530G SiHFI530G-E3
    Text: IRFI530G, SiHFI530G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • 175 °C Operating Temperature • Dynamic dV/dt Rating


    Original     		PDF IRFI530G, SiHFI530G O-220 18-Jul-08 IRFI530GPBF 58AB IRFI530G SiHFI530G-E3

    Untitled

    Abstract: No abstract text available
    Text: PD - 95419 HEXFET Power MOSFET l l l l l l IRFI530NPbF PRELIMINARY Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free D VDSS = 100V RDS on = 0.11Ω G Description


    Original     		PDF IRFI530NPbF O-220 I840G

    IRF530N

    Abstract: 4.5V to 100V input regulator
    Text: PD - 95419 IRFI530NPbF HEXFET Power MOSFET l l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free D VDSS = 100V RDS on = 0.11Ω G Description Fifth Generation HEXFETs from International Rectifier


    Original     		PDF IRFI530NPbF O-220 I840G IRF530N 4.5V to 100V input regulator

    Untitled

    Abstract: No abstract text available
    Text: IRFI530G, SiHFI530G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • 175 °C Operating Temperature • Dynamic dV/dt Rating


    Original     		PDF IRFI530G, SiHFI530G O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    IRF530N

    Abstract: 4.5V to 100V input regulator
    Text: PD - 95419 IRFI530NPbF HEXFET Power MOSFET l l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free D VDSS = 100V RDS on = 0.11Ω G Description Fifth Generation HEXFETs from International Rectifier


    Original     		PDF IRFI530NPbF O-220 I840G IRF530N 4.5V to 100V input regulator

    Untitled

    Abstract: No abstract text available
    Text: PD - 95419 IRFI530NPbF HEXFET Power MOSFET l l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free D VDSS = 100V RDS on = 0.11Ω G Description ID = 12A


    Original     		PDF IRFI530NPbF O-220 I840G

    Untitled

    Abstract: No abstract text available
    Text: SiHFI530G, IRFI530G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • 175 °C Operating Temperature • Dynamic dV/dt Rating


    Original     		PDF SiHFI530G IRFI530G O-220 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: SiHFI530G, IRFI530G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • 175 °C Operating Temperature • Dynamic dV/dt Rating


    Original     		PDF SiHFI530G IRFI530G O-220 12-Mar-07

    IRFI530

    Abstract: IRF530N IRFI530N b 1370 4.5V TO 100V INPUT REGULATOR
    Text: PD - 9.1353A IRFI530N PRELIMINARY HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D VDSS = 100V RDS on = 0.11Ω G Description ID = 12A


    Original     		PDF IRFI530N O-220 IRFI530 IRF530N IRFI530N b 1370 4.5V TO 100V INPUT REGULATOR

    IRF530N

    Abstract: IRFI530N IRFI840G
    Text: PD -9.1353 IRFI530N PRELIMINARY HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated VDSS = 100V RDS on = 0.11Ω ID = 11A Description


    Original     		PDF IRFI530N O-220 IRF530N IRFI530N IRFI840G

    Untitled

    Abstract: No abstract text available
    Text: IRFI530G, SiHFI530G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • 175 °C Operating Temperature • Dynamic dV/dt Rating


    Original     		PDF IRFI530G, SiHFI530G O-220 11-Mar-11

    fqp60n06

    Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
    Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier


    Original     		PDF STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640

    sumida 94V-0

    Abstract: inverter using irfz44n MOSFET IRF9430 IRF7414 irfp460 dc welding circuit diagram IRFP264 inverter circuits IRFP450 inverter Three phase inverter using irfp450 mosfet Diagram Sumida ul94v-0 inverter IRF 544 N MOSFET
    Text: International Rectifier The IGBT SIP & HEXPak Navigator Effective 8 September, EXISTING Products NEW Products UPCOMING Products POTENTIAL Products released to production in last 6-9 months to be released within next 3-4 months no current plans. see bus.mgmt.


    Original     		PDF IRFK2D054 IRFK2F054 CPV362M4U CPV363M4U CPV364M4U CPV362M4F CPV363M4F CPV364M4F CPV362M4K CPV363M4K sumida 94V-0 inverter using irfz44n MOSFET IRF9430 IRF7414 irfp460 dc welding circuit diagram IRFP264 inverter circuits IRFP450 inverter Three phase inverter using irfp450 mosfet Diagram Sumida ul94v-0 inverter IRF 544 N MOSFET

    IRFI530G

    Abstract: 670 nm
    Text: International lOR Rectifier PD-9.737 IRFI530G HEXFET Power MOSFET • • • • • • isolated Package High Voitage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm 175°C Operating Temperature Dynamic dv/dt Rating Low Thermal Resistance ^D S S -


    OCR Scan     		PDF IRFI530G O-220 fTteiT13tà 670 nm

    Untitled

    Abstract: No abstract text available
    Text: PD - 9.1353A International I R Rectifier IRFI530N PRELIMINARY HEXFEr Power MOSFET • • • • • Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS © Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated V d ss = 1 00 V


    OCR Scan     		PDF IRFI530N O-220

    pj 69 diode

    Abstract: IRFI530G 97A IR
    Text: PD-9.737 International IS Rectifier IRFI530G HEXFET Power MOSFET • • • • • • Isolated Package High Voltage lsoiation= 2.5KVRMS Sink to Lead Creepage Dist - 4.8mm 175°C Operating Temperature Dynamic dv/dt Rating Low Thermal Resistance V DSS= 1 0 0 V


    OCR Scan     		PDF IRFI530G O-220 pj 69 diode IRFI530G 97A IR

    IRF530N

    Abstract: IRFI530N IRFI840G JS t 15 IRFI530 ScansUX32
    Text: PD -9.1353 IRFI530N P R E LIM IN A R Y HEXFET Power MOSFET • • • • • Advanced Process Technology Isolated Package High Voltage Isolation = 2.5K V R M S <9 Sink to Lead Creepage Dist. = 4.8m m Fully Avalanche Rated V dss - 100V R D S o n = 0 .1 1 £2


    OCR Scan     		PDF IRFI530N T0-220 IRF530N IRFI840G JS t 15 IRFI530 ScansUX32

    eo102

    Abstract: 9245d
    Text: PD - 9.1353A Interna tional IS R Rectifier IRFI530N PRELIMINARY HEXFET Power MOSFET • Advanced Process Technology • Isolated Package • High Voltage Isolation = 2.5KVRMS D • Sink to Lead Creepage Dist. = 4.8mm • Fully Avalanche Rated Vdss = 100 V


    OCR Scan     		PDF IRFI530N eo102 9245d

    Untitled

    Abstract: No abstract text available
    Text: International i “r Rectifier • 4455452 ÜÜ1SD,M370 " INR PD'9'737 IRFI530G HEXFET* Power MOSFET • • • • • • INTERNATIONAL RECTIFIER Isolated Package High Voltage lsolation= 2.5KVRM S D Sink to Lead Creepage Dist.= 4.8mm 175°C Operating Temperature


    OCR Scan     		PDF IRFI530G