IRFI530 Search Results

Contextual Info: IRFI530G Power MOSFET TO-220 FULLPAK D FEATURES • Isolated Package • High Voltage Isolation = 2.5 kVRMS t = 60 s; f = 60 Hz • Sink to Lead Creepage Distance = 4.8 mm • 175 °C Operating Temperature • Dynamic dV/dt Rating • Low Thermal Resistance

IRF530N

Contextual Info: PD - 95419 IRFI530NPbF HEXFET Power MOSFET l l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free D VDSS = 100V RDS on = 0.11Ω G Description Fifth Generation HEXFETs from International Rectifier

IRF530N

Abstract: IRFI530N 4.5v to 100v input regulator
Contextual Info: PD - 9.1353A IRFI530N PRELIMINARY HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D VDSS = 100V RDS on = 0.11Ω G Description ID = 12A

Contextual Info: IRFI530G, SiHFI530G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • 175 °C Operating Temperature • Dynamic dV/dt Rating

IRFI530G

Abstract: 670 nm
Contextual Info: International lOR Rectifier PD-9.737 IRFI530G HEXFET Power MOSFET • • • • • • isolated Package High Voitage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm 175°C Operating Temperature Dynamic dv/dt Rating Low Thermal Resistance ^D S S -

Contextual Info: IRFI530G, SiHFI530G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • 175 °C Operating Temperature • Dynamic dV/dt Rating

IRFI530GPBF

Abstract: 58AB IRFI530G SiHFI530G SiHFI530G-E3
Contextual Info: IRFI530G, SiHFI530G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • 175 °C Operating Temperature • Dynamic dV/dt Rating

Contextual Info: PD - 95419 HEXFET Power MOSFET l l l l l l IRFI530NPbF PRELIMINARY Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free D VDSS = 100V RDS on = 0.11Ω G Description

Contextual Info: PD - 9.1353A International I R Rectifier IRFI530N PRELIMINARY HEXFEr Power MOSFET • • • • • Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS © Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated V d ss = 1 00 V

IRF530N

Abstract: 4.5V to 100V input regulator
Contextual Info: PD - 95419 IRFI530NPbF HEXFET Power MOSFET l l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free D VDSS = 100V RDS on = 0.11Ω G Description Fifth Generation HEXFETs from International Rectifier

pj 69 diode

Abstract: IRFI530G 97A IR
Contextual Info: PD-9.737 International IS Rectifier IRFI530G HEXFET Power MOSFET • • • • • • Isolated Package High Voltage lsoiation= 2.5KVRMS Sink to Lead Creepage Dist - 4.8mm 175°C Operating Temperature Dynamic dv/dt Rating Low Thermal Resistance V DSS= 1 0 0 V

IRF530N

Abstract: IRFI530N IRFI840G JS t 15 IRFI530 ScansUX32
Contextual Info: PD -9.1353 IRFI530N P R E LIM IN A R Y HEXFET Power MOSFET • • • • • Advanced Process Technology Isolated Package High Voltage Isolation = 2.5K V R M S <9 Sink to Lead Creepage Dist. = 4.8m m Fully Avalanche Rated V dss - 100V R D S o n = 0 .1 1 £2

Contextual Info: IRFI530G, SiHFI530G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • 175 °C Operating Temperature • Dynamic dV/dt Rating

IRF530N

Abstract: 4.5V to 100V input regulator
Contextual Info: PD - 95419 IRFI530NPbF HEXFET Power MOSFET l l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free D VDSS = 100V RDS on = 0.11Ω G Description Fifth Generation HEXFETs from International Rectifier

Contextual Info: SiHFI530G, IRFI530G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • 175 °C Operating Temperature • Dynamic dV/dt Rating

Contextual Info: SiHFI530G, IRFI530G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • 175 °C Operating Temperature • Dynamic dV/dt Rating

IRFI530

Abstract: IRF530N IRFI530N b 1370 4.5V TO 100V INPUT REGULATOR
Contextual Info: PD - 9.1353A IRFI530N PRELIMINARY HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D VDSS = 100V RDS on = 0.11Ω G Description ID = 12A

eo102

Abstract: 9245d
Contextual Info: PD - 9.1353A Interna tional IS R Rectifier IRFI530N PRELIMINARY HEXFET Power MOSFET • Advanced Process Technology • Isolated Package • High Voltage Isolation = 2.5KVRMS D • Sink to Lead Creepage Dist. = 4.8mm • Fully Avalanche Rated Vdss = 100 V

AN609

Abstract: IRFI530G SiHFI530G
Contextual Info: IRFI530G_RC, SiHFI530G_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,

IRF530N

Abstract: IRFI530N IRFI840G
Contextual Info: PD -9.1353 IRFI530N PRELIMINARY HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated VDSS = 100V RDS on = 0.11Ω ID = 11A Description

Contextual Info: International i “r Rectifier • 4455452 ÜÜ1SD,M370 " INR PD'9'737 IRFI530G HEXFET* Power MOSFET • • • • • • INTERNATIONAL RECTIFIER Isolated Package High Voltage lsolation= 2.5KVRM S D Sink to Lead Creepage Dist.= 4.8mm 175°C Operating Temperature

Contextual Info: IRFI530G, SiHFI530G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • 175 °C Operating Temperature • Dynamic dV/dt Rating

fqp60n06

Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
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sumida 94V-0

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Contextual Info: International Rectifier The IGBT SIP & HEXPak Navigator Effective 8 September, EXISTING Products NEW Products UPCOMING Products POTENTIAL Products released to production in last 6-9 months to be released within next 3-4 months no current plans. see bus.mgmt.