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    Contextual Info: P D - 9.1275 International [ïô i Rectifier IRL2310 PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDs on Specified at VGS= 4.5V & 10V 175°C Operating Temperature


    OCR Scan     		IRL2310 Liguria49 5S452 GG22331 PDF

    IRfl23

    Abstract: IRF1010 IRL2310
    Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1275 IRL2310 PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS on Specified at V GS= 4.5V & 10V


    Original     		IRL2310 IRF1010 IRfl23 IRF1010 IRL2310 PDF

    irf1010

    Abstract: IRfl23 IRL2310
    Contextual Info: PD - 9.1275 IRL2310 PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS on Specified at V GS= 4.5V & 10V 175°C Operating Temperature VDSS = 100V


    Original     		IRL2310 O-220 IRF1010 irf1010 IRfl23 IRL2310 PDF