IRFM250 Search Results

Contextual Info: ^E.mi-dondactoi {Piodueti, -Una. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. IRFM250 POWER MOSFET THRU-HOLE (TO-254AA) Features: Simple Drive Requirements Ease of Paralleling Hermetically Sealed

mosfets

Abstract: IRFM250 SHD218503B
Contextual Info: Part Number Search: MOSFETs Product Specifications MOSFETs, N Channel SM Type Number V BR DSS (Volts) ID (25°C) (Amps) ID (100°C) (Amps) PD (25°C) RDS(on) @ ID (Ohms@Amps) theta JC (°C/W) Similar Part Type Package Style 200 30 19 200 0.85 @ 19 0.6 IRFM250

Contextual Info: IRFM250D MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET 1 3 .8 4 (.5 4 5 ) 1 .2 7 (.0 5 0 ) 1 .0 2 (.0 4 0 ) 1 3 .5 9 (.5 3 5 ) 6 .6 0 (.2 6 0 ) 6 .3 2 (.2 4 9 ) 6 .9 1 (.2 7 2 ) 6 .8 1 (.2 6 8 ) 3 .7 8 (.1 4 9 ) 3 .5 3 (.1 3 9 ) 2 0 .3 2 (.8 0 0 )

Contextual Info: N-CHANNEL POWER MOSFET 2N7225 / IRFM250 • VDSS = 200V, ID CONT = 27.4A, RDS(ON) = 100mΩ • Hermetic Isolated Metal TO-254AA Package • Integral Body Diode • High-Reliability Screening Options Available • Tabless and Z Tab options available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)

IRFM250D

Contextual Info: IRFM250D MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET VDSS ID(cont) RDS(on) 200V 27.4A Ω 0.100Ω FEATURES • N–CHANNEL MOSFET • HIGH VOLTAGE • INTEGRAL PROTECTION DIODE • HERMETIC ISOLATED TO-254 PACKAGE • CERAMIC SURFACE MOUNT PACKAGE

IR LFN

Abstract: LFN ir D0113 CJ10L 2N7225 IRFM250 2N7225 JANTX 024-S
Contextual Info: Data Sheet No. PD-9.554D INTERNATIONAL RECTIFIER IO R REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFM250 SN7SS5 JANTX2N7225 JANTXV2N72S5 N-CHANNEL REF: MIL-S-1S500/5B&] Product Summary 200 Volt, 0.100 Ohm HEXFET The HEXFET® technology is the key to International

mosfets

Abstract: IRFM250 SHD239503
Contextual Info: Part Number Search: MOSFETs Product Specifications MOSFETs, N Channel SM Type Number V BR DSS (Volts) ID (25°C) (Amps) ID (100°C) (Amps) PD (25°C) RDS(on) @ ID (Ohms@Amps) theta JC (°C/W) Similar Part Type Package Style 200 30 19 200 0.85 @ 19 0.37 IRFM250

IRFM250

Abstract: 274A
Contextual Info: IRFM250 MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET 13.59 (0.535) 13.84 (0.545) 6.32 (0.249) 6.60 (0.260) VDSS ID(cont) RDS(on) 1.02 (0.040) 1.27 (0.050) 30.35 (1.195) 31.40 (1.235) 16.89 (0.665) 17.40 (0.685) 13.59 (0.535) 13.84 (0.545)

2N7225

Abstract: IRFM250
Contextual Info: IRFM250 2N7225 MECHANICAL DATA Dimensions in mm inches 13.59 (0.535) 13.84 (0.545) N–CHANNEL POWER MOSFET 6.32 (0.249) 6.60 (0.260) 1.02 (0.040) 1.27 (0.050) VDSS ID(cont) RDS(on) 30.35 (1.195) 31.40 (1.235) 16.89 (0.665) 17.40 (0.685) 13.59 (0.535) 13.84 (0.545)

IRFM250

Abstract: JANTX2N7225 JANTXV2N7225
Contextual Info: PD - 90554E POWER MOSFET THRU-HOLE TO-254AA Product Summary IRFM250 JANTX2N7225 JANTXV2N7225 REF:MIL-PRF-19500/592 200V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Part Number RDS(on) ID IRFM250 0.100 Ω 27.4A HEXFET® MOSFET technology is the key to International

IRFM250

Contextual Info: PD-90554F POWER MOSFET THRU-HOLE TO-254AA IRFM250 JANTX2N7225 JANTXV2N7225 REF:MIL-PRF-19500/592 200V, N-CHANNEL Product Summary HEXFET MOSFET TECHNOLOGY Part Number RDS(on) ID IRFM250 0.100 Ω 27.4A HEXFET® MOSFET technology is the key to International

Contextual Info: mi = V r= INI IRFM250 SEM E LAB MECHANICAL DATA N-CHANNEL POWER MOSFET Dimensions in mm inches 6.32 (0.249) 6.60 0.260 r< '- 1.02 (0.040) “ 1*1 r 1.27 (0.050) 13.59 (0.535) 13.84 (0.545) 3.53 (0.139) Dia. 3.78 (0.149) V DSS 200V 27.4A ^D(cont)

Contextual Info: N-CHANNEL POWER MOSFET 2N7225 / IRFM250 • VDSS = 200V, ID CONT = 27.4A, RDS(ON) = 100m1 • Hermetic Isolated Metal TO-254AA Package • Integral Body Diode • High-Reliability Screening Options Available • Tabless and Z Tab options available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)

Contextual Info: PD-90554F POWER MOSFET THRU-HOLE TO-254AA IRFM250 JANTX2N7225 JANTXV2N7225 REF:MIL-PRF-19500/592 200V, N-CHANNEL Product Summary HEXFET MOSFET TECHNOLOGY Part Number RDS(on) ID IRFM250 0.100 Ω 27.4A HEXFET® MOSFET technology is the key to International

IRF460

Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
Contextual Info: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,

IRFM250

Abstract: SFF250M-1 SFF250Z-1 F00303
Contextual Info: PRELIMINARY SFF250M-1 SFF250Z-1 SOLID STATE DEVICES, INC 14849 Firestone Boulevard • La Mirada,CA 90638 Phone: 714 670-SSDI (7734) • Fax: (714) 522-7424 30 AMP 200 VOLTS 0.075 Q N-CHANNEL POWER MOSFET Designer’s Data Sheet FEATURES: Rugged construction with poly silicon gate

IRFM250

Abstract: SFF250 SFF250M SFF250Z
Contextual Info: SFF250M SFF250Z Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: 562 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER’S DATA SHEET 30 AMP / 200 Volts 0.060 Ω typical N-Channel POWER MOSFET Part Number / Ordering Information 1/

IRFM9034

Abstract: irh7c50se IRFM460 irhy IRFE310 international rectifier p JANSR2N7261
Contextual Info: International Rectifier Government and Space Products BVDSS Part Number Channel V RDS(on) (Ω) PD @ TC = 25°C ID @ T =100°C C (A) ID @ T =25 C (A) Total Dose Rating Rads (Si) (W) Fax-on-Demand HEXFET Power MOSFETs to view a data sheet, click on the part number

irfm9034

Contextual Info: 1 I n t e r n a t io n a l R e c t if ie r Government and Space Products Pvt Numb« 2 (3) bvdss (Vote) RDS(on) (Ohms) ID« Tc*2T (Amps) 10« TC=100“ (Amps) Pd O Tc«25° (Watts) Fax-onOamand Number Case Styl«, (Cas* (Min») (1) HEXFET Power MOSFETs Hermetic Package, N- and P-Channel

2N7334

Abstract: irfg9110 H24 SMD
Contextual Info: Other Products from IR Government and Space H EX FET Power M O SFETs Radiation Hardened N - and P-Channel Part • d@ T ,= 25°C Iq@ Tq = 100*C A (A) RthJC Max. (K/W) Pd@ Tq = 25°C Number BVq ss (V) RDS(on) (Ohms) IRHE7110 100 IRHE8110 IRHE7130 IRHE8130

Arduino Mega2560

Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
Contextual Info: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM

SHD239608

Abstract: shd239606
Contextual Info: SENSITRON SEMICONDUCTOR 2000 CATALOG HERMETIC POWER MOSFETs N-CHANNEL, TO-254, TO-257 TYPE NUMBER DRAIN TO SOURCE BREAKDOWN VOLTAGE V (BR)DSS Volts CONTINUOUS DRAIN CURRENT ID MAXIMUM POWER DISSIPATION PD STATIC DRAIN TO SOURCE ON RESISTANCE RDS(on) MAXIMUM

10RIA10

Abstract: HFA40HF120 irfm9034 10RIA100 10RIA120 10RIA20 10RIA40 10RIA60 JANSR2N7261 70HF
Contextual Info: Index International Rectifier Government and Space Products Level of Quality Part Number Rectifiers Voltage Current CECC Issue Issue Assessment and CECC V (A) Specs Number Date 50 000 Screen Level Options Fax-on-Demand CECC-Qualifed, Europe Mfg. in Italy

C3781

Abstract: 2N7225 IRFM250 2N7225 JANTX transistor 1317 i324
Contextual Info: Data Sheet No. PD-9.554D INTERNATIONAL RECTIFIER I R REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR t N-CHANNEL IRFMS50 SN7SS5 JANTX2N7S25 JAIMTXV2N7225 REF: MIL-S-19500/5 9 5 ] Product Summary 200 Volt, 0.100 Ohm HEXFET The HEXFET® technology is the key to International