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    IRFP048 Price and Stock

    Vishay Siliconix IRFP048PBF

    MOSFET N-CH 60V 70A TO247-3
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    DigiKey IRFP048PBF Tube 392 1
    • 1 $5.61
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    Infineon Technologies AG IRFP048N

    MOSFET N-CH 55V 64A TO247AC
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    DigiKey IRFP048N Bag 25
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    Vishay Siliconix IRFP048RPBF

    MOSFET N-CH 60V 70A TO247-3
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    DigiKey IRFP048RPBF Tube 500
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    Quest Components IRFP048RPBF 40
    • 1 $3.132
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    Infineon Technologies AG IRFP048NPBF

    MOSFET N-CH 55V 64A TO247AC
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    Verical IRFP048NPBF 34,892 469
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    Rochester Electronics IRFP048NPBF 34,892 1
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    Rochester Electronics LLC IRFP048NPBF

    IRFP048 - 12V-300V N-CHANNEL POW
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    DigiKey IRFP048NPBF Bulk 424
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    IRFP048 Datasheets (18)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRFP048 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRFP048 International Rectifier HEXFET Power Mosfet Scan PDF
    IRFP048 International Rectifier HEXFET Power MOSFET Scan PDF
    IRFP048 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRFP048 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    IRFP048N International Rectifier HEXFET Power MOSFET Original PDF
    IRFP048N International Rectifier 55V Single N-Channel HEXFET Power MOSFET in a TO-247AC package; A IRFP048N with Standard Packaging Original PDF
    IRFP048N International Rectifier HEXFET Power MOSFET Original PDF
    IRFP048N Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRFP048N International Rectifier Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, N-Channel, Power, 55V, 62A, Pkg Style TO-247AC Scan PDF
    IRFP048NPBF International Rectifier Original PDF
    IRFP048NPBF International Rectifier 55V Single N-Channel HEXFET Power MOSFET in a TO-247AC package; Similar to IRFP048N with Lead Free Packaging Original PDF
    IRFP048PBF Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 70A TO-247AC Original PDF
    IRFP048R International Rectifier 60V Single N-Channel HEXFET Power MOSFET in a TO-247AC package Original PDF
    IRFP048R International Rectifier 60V Single N-Channel HEXFET Power MOSFET in a TO-247AC package Scan PDF
    IRFP048R International Rectifier HEXFET Power MOSFET Scan PDF
    IRFP048RPBF International Rectifier HEXFET Power MOSFET Original PDF
    IRFP048RPBF Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 70A TO-247AC Original PDF

    IRFP048 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: IRFP048, SiHFP048 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) • 175 °C Operating Temperature 110 Qgs (nC) 29 Qgd (nC) 38 Configuration Available • Isolated Central Mounting Hole


    Original     		PDF IRFP048, SiHFP048 2002/95/EC O-247AC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU.

    IRFP048R

    Abstract: 7052A
    Text: IRFP048R, SiHFP048R Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 110 Qgs (nC) 29 Qgd (nC) 38 Configuration • Isolated Central Mounting Hole 0.018 COMPLIANT • Ease of Paralleling


    Original     		PDF IRFP048R, SiHFP048R O-247 O-220 O-218 18-Jul-08 IRFP048R 7052A

    diode R 360 BL

    Abstract: IRFP048N TO-247AC Package IRFZ48N
    Text: PD - 9.1409A IRFP048N HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 0.016Ω G Description ID = 64A S Fifth Generation HEXFETs from International Rectifier


    Original     		PDF IRFP048N O-247 diode R 360 BL IRFP048N TO-247AC Package IRFZ48N

    IRFP048R

    Abstract: No abstract text available
    Text: IRFP048R, SiHFP048R Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 110 Qgs (nC) 29 Qgd (nC) 38 Configuration • Isolated Central Mounting Hole 0.018 COMPLIANT • Ease of Paralleling


    Original     		PDF IRFP048R, SiHFP048R O-247 O-220 O-218 18-Jul-08 IRFP048R

    diode code ae

    Abstract: 035H IRFPE30 632 diode
    Text: PD- 95502 IRFP048RPbF • Lead-Free Absolute Maximum Ratings Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V Max. ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 52 IDM 290 Pulsed Drain Current ™ PD @TC = 25°C Power Dissipation VGS EAS


    Original     		PDF IRFP048RPbF O-247AC IRFPE30 diode code ae 035H IRFPE30 632 diode

    TO-247AC Package

    Abstract: IRFPE30 035H TO247AC
    Text: PD- 95422 IRFP048NPbF • Lead-Free 1 IRFP048NPbF 2 IRFP048NPbF TO-247AC Package Outline Dimensions are shown in millimeters inches TO-247AC Part Marking Information EXAMPLE: T HIS IS AN IRFPE30 WIT H ASSEMBLY LOT CODE 5657 ASSEMBLED ON WW 35, 2000 IN THE ASSEMBLY LINE "H"


    Original     		PDF IRFP048NPbF O-247AC IRFPE30 TO-247AC Package IRFPE30 035H TO247AC

    Untitled

    Abstract: No abstract text available
    Text: IRFP048R, SiHFP048R Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) • Isolated Central Mounting Hole 0.018 • 175 °C Operating Temperature 110 Qgs (nC) 29 Qgd (nC) 38 Configuration


    Original     		PDF IRFP048R, SiHFP048R 2002/95/EC O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: IRFP048, SiHFP048 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 110 Qgs (nC) 29 Qgd (nC) 38 Configuration RoHS* • 175 °C Operating Temperature COMPLIANT • Ease of Paralleling


    Original     		PDF IRFP048, SiHFP048 O-247 O-220 12-Mar-07

    Untitled

    Abstract: No abstract text available
    Text: IRFP048R, SiHFP048R Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) • Isolated Central Mounting Hole 0.018 • 175 °C Operating Temperature 110 Qgs (nC) 29 Qgd (nC) 38 Configuration


    Original     		PDF IRFP048R, SiHFP048R 2002/95/EC O-247AC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU.

    Untitled

    Abstract: No abstract text available
    Text: IRFP048, SiHFP048 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) • 175 °C Operating Temperature 110 Qgs (nC) 29 Qgd (nC) 38 Configuration Available • Isolated Central Mounting Hole


    Original     		PDF IRFP048, SiHFP048 2002/95/EC O-247AC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU.

    TO247AC

    Abstract: IRFz48N MOSFET DM marking code equivalent IRFZ48N IRFP048N IRFPE30 IRFZ48N st l 9302
    Text: PD 9.1409 IRFP048N PRELIMINARY HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 0.016Ω G ID = 62A S Description Fifth Generation HEXFETs from International Rectifier


    Original     		PDF IRFP048N O-247 TO247AC IRFz48N MOSFET DM marking code equivalent IRFZ48N IRFP048N IRFPE30 IRFZ48N st l 9302

    14.5M 1982

    Abstract: irf 9246 IRF1010E TO-247AC Package IRF 1010 irf 44 n
    Text: IRFP048N Package Outline HEXFET TO-247AC Outline Dimensions are shown in millimeters inches -D - 3 .6 5 (.1 4 3 ) 3 .5 5 (.1 4 0 ) 1 5 .90 (.6 2 6) 1 5 .30 (.6 0 2) -B- 0 .25 (.0 1 0) M D B M -A5 .5 0 (.2 1 7 ) NOT ES : 2 0 .3 0 (.80 0 ) 1 9 .7 0 (.77 5 )


    Original     		PDF IRFP048N O-247AC O-247-A 14.5M 1982 irf 9246 IRF1010E TO-247AC Package IRF 1010 irf 44 n

    Untitled

    Abstract: No abstract text available
    Text: IRFP048, SiHFP048 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) • 175 °C Operating Temperature 110 Qgs (nC) 29 Qgd (nC) 38 Configuration Available • Isolated Central Mounting Hole


    Original     		PDF IRFP048, SiHFP048 2002/95/EC O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: PD- 95502 IRFP048RPbF • Lead-Free Absolute Maximum Ratings Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V Max. ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 52 IDM 290 Pulsed Drain Current PD @TC = 25°C Power Dissipation VGS EAS Units


    Original     		PDF IRFP048RPbF 08-Mar-07

    IRFP048

    Abstract: No abstract text available
    Text: IRFP048, SiHFP048 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 110 Qgs (nC) 29 Qgd (nC) 38 Configuration RoHS* • 175 °C Operating Temperature COMPLIANT • Ease of Paralleling


    Original     		PDF IRFP048, SiHFP048 O-247 O-247 O-220 O-218 18-Jul-08 IRFP048

    Untitled

    Abstract: No abstract text available
    Text: PD - 94464 IRFP048R 06/04/02 IRFP048R IRFP048R IRFP048R IRFP048R IRFP048R


    Original     		PDF IRFP048R

    Untitled

    Abstract: No abstract text available
    Text: IRFP048R, SiHFP048R Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) • Isolated Central Mounting Hole 0.018 • 175 °C Operating Temperature 110 Qgs (nC) 29 Qgd (nC) 38 Configuration


    Original     		PDF IRFP048R, SiHFP048R 2002/95/EC O-247AC O-220AB 11-Mar-11

    035H

    Abstract: IRFPE30
    Text: PD- 95422 IRFP048NPbF • Lead-Free www.irf.com 1 06/16/04 IRFP048NPbF 2 www.irf.com IRFP048NPbF www.irf.com 3 IRFP048NPbF 4 www.irf.com IRFP048NPbF www.irf.com 5 IRFP048NPbF 6 www.irf.com IRFP048NPbF www.irf.com 7 IRFP048NPbF TO-247AC Package Outline Dimensions are shown in millimeters inches


    Original     		PDF IRFP048NPbF O-247AC 035H IRFPE30

    IRFz48N MOSFET

    Abstract: IRFP048N IRFZ48N IRFP048 IRF 024
    Text: PD - 9.1409A IRFP048N HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 0.016Ω G Description ID = 64A S Fifth Generation HEXFETs from International Rectifier


    Original     		PDF IRFP048N O-247 IRFz48N MOSFET IRFP048N IRFZ48N IRFP048 IRF 024

    Untitled

    Abstract: No abstract text available
    Text: IRFP048, SiHFP048 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) • 175 °C Operating Temperature 110 Qgs (nC) 29 Qgd (nC) 38 Configuration Available • Isolated Central Mounting Hole


    Original     		PDF IRFP048, SiHFP048 2002/95/EC O-247AC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: IRFP048R, SiHFP048R Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) • Isolated Central Mounting Hole 0.018 • 175 °C Operating Temperature 110 Qgs (nC) 29 Qgd (nC) 38 Configuration


    Original     		PDF IRFP048R, SiHFP048R 2002/95/EC O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    lg diode 923

    Abstract: IRFP048 LG 72A
    Text: PD-9.820 International S Rectifier IRFP048 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating Isolated Central Mounting Hole 175°C Operating Temperature Ease of Paralleling Simple Drive Requirements V dss = 6 0 V R DS on = 0 - 0 1 8 0 lD = 7 0 *A


    OCR Scan     		PDF IRFP048 O-247 T0-220 O-218 lg diode 923 IRFP048 LG 72A

    T0247AC

    Abstract: No abstract text available
    Text: kitemational PD 9.1409 SRectifier IRFP048N PRELIMINARY HEXFET Power M OSFET Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Voss = 55V ^DS on = 0.016Î2 lD = 62A Description Fifth Generation HEXFETs from International Rectifier


    OCR Scan     		PDF IRFP048N O-247 61350BadHomburgTel: T0247AC

    c366

    Abstract: C369 c368 IRFP048N
    Text: PD - 9.1409A International IQ R Rectifier IRFP048N HEXFET Power MOSFET • • • • • Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated V dss = 55V ^D S o n = 0.016Q lD = 64A Description


    OCR Scan     		PDF IRFP048N O-247 C-368 C-369 c366 C369 c368 IRFP048N