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    IRFP321 Search Results

    IRFP321 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF PDF Size Page count
    IRFP321
    		Unknown FET Data Book Scan PDF 40.19KB 1

    IRFP321 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    1rfp240

    Abstract: 1RFP340 1RFP360 IRFP310 IRFP232 1rfp254 IRFP240 IRFP141 IRFP321 IRFP151
    Contextual Info: - M tt % f ft ± ï Vd s or i Vd g k V £ £ Vg s (V ) fë 1 (T a= 2 5 °C ) Id Pd * /CH * /CH (A ) (W) Ig ss (n A ) Vg s I d ss Vg s (V ) th ) m in max (V ) (V ) ma) (V ) (n A ) fè F D s (o n ) Vd s = Vg s Id Vd s ( ft % g fs Io (o n ) C is s Coss C rss


    OCR Scan     		O-247AC IRFP141 IRFP14! T0-247AC 1RFP330 IRFP331 1RFP332 IRFP333 1RFP340 1rfp240 1RFP360 IRFP310 IRFP232 1rfp254 IRFP240 IRFP321 IRFP151 PDF

    1RFP240

    Abstract: IRFP310 T03P IRFP243 irfp250 irfp320 IRFP232 IRFP323 n4001 IRFP242
    Contextual Info: - l À È f g gj £ 4t Vd s or € % Vd g % V Vg s (V) W. (Ta=25*C) Id Pd * /CH * /CH (A) (W) Ig s s Vg s th) Id s s min (nA) Vg s (V) <M) Vd s (V) (V) W Id (nA) ¡fê Ds(on) Vd s = Vg s max (V) m fë Io(on) g fs Ciss Coss Crss (*typ) (max) (pF) (*typ) (max)


    OCR Scan     		IRFP232 1RFP233 1RFP240 IRFP241 IRFP242 IRFP243 1RFP330 IRFP331 1RFP332 IRFP333 IRFP310 T03P irfp250 irfp320 IRFP323 n4001 PDF

    irfp321

    Abstract: IRFP320 IRFP323 IRFP322 mosfet p.321 samsung tv
    Contextual Info: "OT^JT-" 7964 142 SAMSUNG SEMI CONDUCTOR. .INC 98D 05189 D e | TlbMlMS DOOSlflT S I N-CHANNEL POWER MOSFETS •' IRFP320/321/322/323 FEATURES • LowRDS{on • • • • • • • Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure


    OCR Scan     		IRFP320/321/322/323 IRFP320 IRFP321 IRFP322 IRFP323 00GS435 irfp321 mosfet p.321 samsung tv PDF

    irf3203

    Abstract: irf3203 MOSFET IRFP320-3 IRFP3203 irfp321 irf320 F321 IRF N-Channel Power MOSFETs jys 33 ST E 722
    Contextual Info: IRF720/721/722/723 IRFP320/321/322/323 IRF320/321/322/323 N’CHANNEL POWER MOSFETS FEATURES • Lower R ds on • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area


    OCR Scan     		IRF720/721/722/723 IRFP320/321/322/323 IRF320/321/322/323 IRF720/IRFP320/IRF320 IRF721 /IRFP321 /IRF321 IRF/22/IH FP322/IRF322 IRF723/IRFP323/IRF323 irf3203 irf3203 MOSFET IRFP320-3 IRFP3203 irfp321 irf320 F321 IRF N-Channel Power MOSFETs jys 33 ST E 722 PDF