IRFS254B Search Results

IRFS254B Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IRFS254B		Fairchild Semiconductor	250 V N-Channel MOSFET	Original	PDF	657.39KB	8

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Rochester Electronics LLC IRFS254BFP001 N-CHANNEL POWER MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRFS254BFP001	Bulk	7,200		841	1 - 10 - 100 - 1000 $0.36 10000 $0.36	Buy Now
FAIRCHILD IRFS254BFP001 IRFS254BFP001
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Verical	IRFS254BFP001		7,200		971	1 - 10 - 100 - 1000 $0.39 10000 $0.32	Buy Now
Fairchild Semiconductor Corporation IRFS254BFP001 Power Field-Effect Transistor, N-Channel, MOSFET
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Rochester Electronics	IRFS254BFP001		7,200		1	1 - 10 - 100 $0.34 1000 $0.28 10000 $0.25	Buy Now
Fairchild Semiconductor Corporation IRFS254B 250V N-CHANNEL MOSFET Power Field-Effect Transistor, 16A I(D), 250V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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ComSIT USA	IRFS254B		600			1 - 10 - 100 - 1000 - 10000 -	Get Quote

IRFS254B Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
IRFS254B Contextual Info: IRFS254B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching	Original	IRFS254B IRFS254B	PDF
Contextual Info: IRFS254B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching	Original	IRFS254B	PDF
Contextual Info: IRFS254B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching	Original	IRFS254B	PDF
thermistor KSD201 Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp Contextual Info: Fairchild Semiconductor Product Catalog 2004 Microcontrollers Optoelectronics Across the board. Around the world. Analog Discrete Interface & Logic Interface & Logic Discrete Power Optoelectronics Analog & Mixed Signal Fairchild Semiconductor, The Power Franchise™	Original		PDF
FLMP SuperSOT-6 Abstract: Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80 Contextual Info: 2003 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide 2003 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1	Original	SC70-6 SC75-6 SuperSOTTM-3/SOT-23 Power247TM, FLMP SuperSOT-6 Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80	PDF
fqaf40n25 Abstract: fqaf19n20l FQAF44N08 FQAF44N10 FQAF55N10 FQAF58N08 FQAF65N06 FQAF70N08 FQAF70N10 FQAF85N06 Contextual Info: Discrete MOSFETs TO-3PF RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg (nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) TO-3PF N-Channel FQAF85N06 60 Single 0.01 - - - 86 67 100 FQAF65N06 60 Single 0.016 - - - 48 49 86	Original	FQAF85N06 FQAF65N06 FQAF90N08 FQAF70N08 FQAF58N08 FQAF44N08 SSF70N10A FQAF70N10 FQAF12P20 SFF9240 fqaf40n25 fqaf19n20l FQAF44N08 FQAF44N10 FQAF55N10 FQAF58N08 FQAF65N06 FQAF70N08 FQAF70N10 FQAF85N06	PDF
sss4n60a Abstract: IRFS634A IRFS630A SSP4N60A irf640b SSS7N60A IRFU210A SSP7N60A IRF634B IRF840A china Contextual Info: B-FET Line Card Fairchild Power MOSFETs B-FET Line Card Overview Fairchild has developed a new range of 200V~600V MOSFETs, called B-FETs, using Fairchild’s proprietary, planar, DMOS technology. This advanced technology is especially tailored for minimizing on-state resistance, providing superior switching performance, and withstanding a high	Original	IRF830A IRF830B Power247TM, sss4n60a IRFS634A IRFS630A SSP4N60A irf640b SSS7N60A IRFU210A SSP7N60A IRF634B IRF840A china	PDF
SSP6N60A Abstract: IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B SSS7N60B ssr2955 IRFS630A SSP4N60A sss3n90a IRF634A Contextual Info: March 2002 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide March 2002 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . .2	Original	SC70-6 OT-23) FDR8321L FDR8521L FDFS2P106A FDFS2P103 FDFS2P102 SSP6N60A IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B SSS7N60B ssr2955 IRFS630A SSP4N60A sss3n90a IRF634A	PDF
FQPf10N60C Abstract: FQPF10n20c FQPF10N20C FQP17P06 fqpf6n80 FQP630 equivalent FQU17P06 FQPF5n50c IRF650 FQA90N08 Contextual Info: Discrete BGA BVDSS Min. V Config. 20 RDS(ON) Max (Ω) @ VGS = 10V 4.5V 2.5V 1.8V Qg Typ. (nC) @VGS = 5V Single – 0.027 0.039 – 7 6 1.7 20 Single – 0.018 0.03 – 11 7.5 1.6 FDZ201N 20 Single – 0.018 0.03 – 11 9 2 FDZ209N 60 Single – 0.08@5V	Original	FDZ201N FDZ209N FDZ2553N FDZ2553NZ FDZ2551N FDZ7064N SFF9140 FQAF47P06 SSF10N60B SSF7N60B FQPf10N60C FQPF10n20c FQPF10N20C FQP17P06 fqpf6n80 FQP630 equivalent FQU17P06 FQPF5n50c IRF650 FQA90N08	PDF