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    IRFSZ34 Search Results

    IRFSZ34 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRFSZ34 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    IRFSZ34 Samsung Electronics N-Channel Power MOSFETS Scan PDF
    IRFSZ34A Fairchild Semiconductor Advanced Power MOSFET Original PDF
    IRFSZ34A Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRFSZ34A Fairchild Semiconductor Advanced Power MOSFET Scan PDF

    IRFSZ34 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRFSZ34A

    Abstract: OE525
    Text: IRFSZ34A Advanced Power MOSFET FEATURES BVDSS = 60V Avalanche Rugged Technology RDS on = 0.04 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 20 A Improved Gate Charge Extended Safe Operating Area TO-220F 175¡É Operating Temperature Lower Leakage Current : 10 µA (Max.) @ VDS = 60V


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    PDF IRFSZ34A O-220F IRFSZ34A OE525

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


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    PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


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    PDF 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620

    ss8050 d 331

    Abstract: tip122 tip127 mosfet audio amp KSD180 KA1M0880 application note SS8550 D 331 dual cc BAW62 KA2S0680 ss8550 sot-23 MPSA92(KSP92) equivalent DIODE 1N4148 LL-34
    Text: Power Products S e l e c t i o n G u i d e September, 1999 Power Products Table of Contents Alphanumeric Listing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2


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    PDF F-91742 ss8050 d 331 tip122 tip127 mosfet audio amp KSD180 KA1M0880 application note SS8550 D 331 dual cc BAW62 KA2S0680 ss8550 sot-23 MPSA92(KSP92) equivalent DIODE 1N4148 LL-34

    IRF9540 application

    Abstract: IRF9540 mosfet IRFS730 equivalent RDS 0,50 ID 1,8 A data sheet IRF9540 datasheet irf9640 mosfet IRF9510 IRF9530 mosfet IRFS634 IRFS830
    Text: N-Channel Power MOSFET’s Part No. Drain-Source Min. On-State Typ. Static DS Brkdwn. Voltg. DS Current Resistance BV DSS V ID(ON) (A) RDS(ON)(Ω) Operating Temperature: -55 o C to 150oC Drain-Source Min. On-State Part No. Brkdwn. Voltg. DS Current 40.00


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    PDF 150oC SSH20N50 SSH60N10 SSH15N60 SSH6N60 IRFP250 IRFP150 SSH40N20 IRFP254 SSH25N40 IRF9540 application IRF9540 mosfet IRFS730 equivalent RDS 0,50 ID 1,8 A data sheet IRF9540 datasheet irf9640 mosfet IRF9510 IRF9530 mosfet IRFS634 IRFS830

    Untitled

    Abstract: No abstract text available
    Text: S A M S UN G E L E C T R O N I C S INC bHE D • T T b M l M S 0 0 1 2 4 2 5 fl?T ■ SM6K IRFSZ34/35 IRFSZ30/32 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • Lower R ds <o n Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure


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    PDF IRFSZ34/35 IRFSZ30/32 IRFSZ34 IRFSZ35 IRFSZ30 IRFSZ32 IRFSZ30

    Untitled

    Abstract: No abstract text available
    Text: Advanced IRFSZ34A Power MOSFET FEATURES • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ 175; ■ Lower Leakage Current : 10 nA Max. @ VDS = 60V ■


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    PDF IRFSZ34A T0-220F

    lcp101

    Abstract: No abstract text available
    Text: IRFSZ34A A dvanced Power MOSEET FEATURES • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ 175; ■ Lower Leakage Current : 10 nA Max. @ VDS = 60V ■


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    PDF IRFSZ34A lcp101

    250M

    Abstract: IRFSZ30 IRFSZ34
    Text: N-CHANNEL POWER MOSFETS IRFSZ34/30 FEATURES • • • • • • • Lower R ds <on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability


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    PDF IRFSZ34/30 IRFSZ34 IRFSZ30 to-220f 7Tb4142 250M

    IRFSZ34A

    Abstract: No abstract text available
    Text: Advanced IRFSZ34A P o w e r MOSFET FEATURES BV DSS — 60V • A valan che R ugged T ech n o lo g y ■ R ugged G ate O xide T e ch n o lo g y ■ Lo w e r Input C a pa citance ■ Im proved G ate C harge ■ E xtended S afe O pe ra ting A rea ■ 175; ■


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    PDF IRFSZ34A TDFC71/1 IRFSZ34A

    IRFSZ34A

    Abstract: No abstract text available
    Text: IRFSZ34A Advanced Power MOSFET FEATURES • BVdss = 60V Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ I7 5 t Operating Temperature ■ Lower Leakage Current : 10 nA M ax @


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    PDF IRFSZ34A IRFSZ34A

    RfZ34

    Abstract: irfsz32 irfsz35
    Text: IRFSZ34/35 IRFSZ30/32 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • TO-220F Lower Rds ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability


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    PDF IRFSZ34/35 IRFSZ30/32 O-220F FSZ34/35 IRFSZ34 IRFSZ35 IRFSZ30 IRFSZ32 RfZ34

    SSS60N

    Abstract: sss6n60 SSS50N06 1RFS644 IRFS540 IRFS541 SSS7N60 irfs630 RFS830
    Text: MOSFETs FUNCTION GUIDE TO-220 FULL PACKAGE N-CHANNEL Part Number BV d ss V lo(on)(A) RDS(on)(Q) FWjc(KTW) PD(Watt) Page IRFSZ20 SSS15N05 IRFSZ30 IRFSZ40 SSS50N05 SSS60N05 50 13.00 14.00 20.00 28.00 30.00 36.00 0.100 0.084 0.050 0.028 0.024 0.018 4.16 4.00


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    PDF O-220 IRFSZ20 SSS15N05 IRFSZ30 IRFSZ40 SSS50N05 SSS60N05 IRFSZ24 SSS15N06 IRFSZ34 SSS60N sss6n60 SSS50N06 1RFS644 IRFS540 IRFS541 SSS7N60 irfs630 RFS830

    irf1740

    Abstract: IRL244 IRF1740A ks 0550 IRL244A IRFZ34A SSH6N80A IRF634A irfs750 IRFS640
    Text: PRODUCT GUIDE D/I- PAK N-Channel Standard FET Part Number SSR3055A BV DSS (V) (A) (0» cfes (pF) I D R DSM Q Po (nC) fC/W) (W) Page 8 0.150 280 17 7.04 18 Vol.1 IRFR014A 8.2 0.140 280 17 7.04 18 Vol.1 IRFR024A 15 0.070 600 32 4.14 30 Vol.1 IRFR034A 23 0.040


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    PDF SSR3055A IRFR014A IRFR024A IRFR034A IRFR110A IRFR120A IRFR130A IRFR210A IRFR220A IRFR230A irf1740 IRL244 IRF1740A ks 0550 IRL244A IRFZ34A SSH6N80A IRF634A irfs750 IRFS640

    irfz34

    Abstract: diode sg 47
    Text: N-CHANNEL POWER MOSFETS IRFZ34/35 FEATURES • • • • • • • Lower R ds on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability


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    PDF IRFZ34/35 IRFZ34 IRFZ35 diode sg 47

    1RFS640A

    Abstract: irf530a irf630a ssp4n60as irfs630a IRF540A SSP2N60A SSS7N60A IRFZ44A SSP45N20A
    Text: Device List T0-220 1RFZ14A IRFZ24A IRFZ34A IRFZ44A IRF510A IRF520A IRF530A IRF540A [RF550A SSP70N10A IRF610A IRF620A IRF630A IRF640A IRF650A SSP45N20A IRF614A IRF624A IRF634A IRF644A IRF654A IRF710A IRF720A IRF730A IRF740A IRF750A SSP1N50A [RF820A IRF830A


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    PDF T0-220 1RFZ14A IRFZ24A IRFZ34A IRFZ44A IRF510A IRF520A IRF530A IRF540A RF550A 1RFS640A irf630a ssp4n60as irfs630a IRF540A SSP2N60A SSS7N60A SSP45N20A

    Irf640 irf9540

    Abstract: IRFR220TF IRF510 mosfet irf640 451 MOSFET KSP44 IRFR9120-TF STR 456 2n3904 2n3906 KST2222ATF IRFR120TF
    Text: PRODUCT INDEX ALPHA NUMERIC INDEX Power MOSFET S/STR Standard MOSFET PART NO. 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 KSP13 KSP2222A KSP27 KSP2907A KSP42 KSP44 KSP56 KSP92 KST10-TF KST2222A-TF KST2484-TF KST2907A-TF KST3904-TF KST3906-TF


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    PDF 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 Irf640 irf9540 IRFR220TF IRF510 mosfet irf640 451 MOSFET KSP44 IRFR9120-TF STR 456 2n3904 2n3906 KST2222ATF IRFR120TF

    IRF9210

    Abstract: darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1
    Text: PRODUCT INDEX FUNCTIONAL SELECTION GUIDE BIPOLAR TRANSISTOR DESCRIPTION MRTNO. 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 KSP13 KSP2222A KSP27 KSP2907A KSP42 KSP44 KSP56 KSP92 KST10-TF KST2222A-TF KST2484-TF KST2907-TF KST3904-TF KST3906-TF


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    PDF 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 IRF9210 darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1

    SSD2104

    Abstract: irfm014 SSP80N06 IRFU210A IRFI530A SSS7N60A IRFU*230A sss7n60a 951 SSP2N60A IRF640A
    Text: PRODUCT GUIDE DO- PAK N-Channel Standard FET Part Number SSR3055A BV DSS (V) OS(on) c Hi Q (A) (G) (PF) (nC) I D R PD fC/W) (W) Page 8 0.150 280 17 7.04 18 IRFR014A 8.2 0.140 280 17 7.04 18 Vol.1 IRFR024A 15 0.070 600 32 4.14 30 Vol.1 60V IRFR034A 23 0.040


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    PDF SSR3055A IRFR014A IRFR024A IRFR034A IRFR110A IRFR120A IRFR130A IRFR210A IRFR220A IRFR230A SSD2104 irfm014 SSP80N06 IRFU210A IRFI530A SSS7N60A IRFU*230A sss7n60a 951 SSP2N60A IRF640A