IRFSZ35 Search Results

IRFSZ35 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF	PDF Size	Page count
IRFSZ35		Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)		Short Form	PDF	120.28KB	1

IRFSZ35 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: S A M S UN G E L E C T R O N I C S INC bHE D • T T b M l M S 0 0 1 2 4 2 5 fl?T ■ SM6K IRFSZ34/35 IRFSZ30/32 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • Lower R ds <o n Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure	OCR Scan	IRFSZ34/35 IRFSZ30/32 IRFSZ34 IRFSZ35 IRFSZ30 IRFSZ32 IRFSZ30	PDF
IRFS540 Abstract: IRFS541 irfsz22 IRFS634 irfs630 IRFS522 Contextual Info: FUNCTION GUIDE POWER MOSFETs TO-220 FULL PACKAGE N-CHANNEL BVdss V Part Number ID(onXA) RDS(onXß) 14.00 15.00 25.00 30.00 35.00 35.00 0.120 0.100 0.070 0.050 0.035 0.028 IRFSZ22 IRFSZ20 IRFSZ32 IRFSZ30 IRFSZ42 IRFSZ40 60.00 14.00 15.00 25.00 30.00 35.00	OCR Scan	O-220 IRFSZ22 IRFSZ20 IRFSZ32 IRFSZ30 IRFSZ42 IRFSZ40 IRFSZ25 IRFSZ24 IRFSZ35 IRFS540 IRFS541 IRFS634 irfs630 IRFS522	PDF
IRF9210 Abstract: darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1 Contextual Info: PRODUCT INDEX FUNCTIONAL SELECTION GUIDE BIPOLAR TRANSISTOR DESCRIPTION MRTNO. 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 KSP13 KSP2222A KSP27 KSP2907A KSP42 KSP44 KSP56 KSP92 KST10-TF KST2222A-TF KST2484-TF KST2907-TF KST3904-TF KST3906-TF	OCR Scan	2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 IRF9210 darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1	PDF
RfZ34 Abstract: irfsz32 irfsz35 Contextual Info: IRFSZ34/35 IRFSZ30/32 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • TO-220F Lower Rds ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability	OCR Scan	IRFSZ34/35 IRFSZ30/32 O-220F FSZ34/35 IRFSZ34 IRFSZ35 IRFSZ30 IRFSZ32 RfZ34	PDF