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Vishay Siliconix IRFU210PBF MOSFET N-CH 200V 2.6A TO251AA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRFU210PBF	Tube	11,306		1	1 $1.54 10 $1.54 100 $0.69427 1000 $0.52269 10000 $0.5	Buy Now
New Advantage Corporation	IRFU210PBF		750		1	1 - 10 - 100 - 1000 $0.2933 10000 $0.2933	Buy Now
Vishay Siliconix IRFU210 MOSFET N-CH 200V 2.6A TO251AA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRFU210	Tube			3,000	1 - 10 - 100 - 1000 - 10000 $1.1875	Buy Now
Vishay Intertechnologies IRFU210PBF MOSFET N-CHANNEL 200V - Tape and Reel (Alt: IRFU210PBF)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	IRFU210PBF	Reel		8 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.49201	Buy Now
Mouser Electronics	IRFU210PBF		4,803			1 $0.82 10 $0.53 100 $0.514 1000 $0.5 10000 $0.5	Buy Now
Verical	IRFU210PBF		779		11	1 - 10 - 100 $0.5077 1000 $0.5077 10000 $0.5077	Buy Now
Arrow Electronics	IRFU210PBF		779	8 Weeks	1	1 $0.5548 10 $0.5077 100 $0.5077 1000 $0.5077 10000 $0.5077	Buy Now
Newark	IRFU210PBF	Cut Tape	1,942		1	1 $0.682 10 $0.56 100 $0.428 1000 $0.428 10000 $0.428	Buy Now

TTI	IRFU210PBF	Tube	900		75	1 - 10 - 100 $0.523 1000 $0.495 10000 $0.485	Buy Now
TME	IRFU210PBF				1	1 $0.761 10 $0.457 100 $0.411 1000 $0.327 10000 $0.293	Get Quote
ComSIT USA	IRFU210PBF		199			1 - 10 - 100 - 1000 - 10000 -	Get Quote
EBV Elektronik	IRFU210PBF			14 Weeks	75	1 - 10 - 100 - 1000 - 10000 -	Buy Now
International Rectifier IRFU210 TRANSISTOR,MOSFET,N-CHANNEL,200V V(BR)DSS,2.6A I(D),TO-251AA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	IRFU210		115			1 $1.32 10 $1.32 100 $0.616 1000 $0.616 10000 $0.616	Buy Now
	IRFU210		28			1 $2.2 10 $1.76 100 $1.32 1000 $1.32 10000 $1.32	Buy Now
ComSIT USA	IRFU210		1,414			1 - 10 - 100 - 1000 - 10000 -	Get Quote

IRFU210 Datasheets (25)

Part	Manufacturer	Description	Datasheet Type	PDF
IRFU210	International Rectifier	Power MOSFET	Original	PDF
IRFU210	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF
IRFU210	Vishay Semiconductors	MOSFET N-CH 200V 2.6A I-PAK	Original	PDF
IRFU210	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 2.6A I-PAK	Original	PDF
IRFU210	International Rectifier	Over 600 obsolete distributor catalogs now available on the Datasheet Archive - MOSFETs	Scan	PDF
IRFU210	International Rectifier	N-Channel HEXFET Transistors, 200 Volt, 1.5 Ohm	Scan	PDF
IRFU210	International Rectifier	HEXFET Power MOSFETs	Scan	PDF
IRFU210	International Rectifier	Plastic Package HEXFETs	Scan	PDF
IRFU210	International Rectifier	HEXFET Power Mosfet	Scan	PDF
IRFU210	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF
IRFU210	Unknown	FET Data Book	Scan	PDF
IRFU210	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
IRFU210	Samsung Electronics	N-Channel Power MOSFETS	Scan	PDF
IRFU210	Samsung Electronics	N-Channel Power MOSFET	Scan	PDF

IRFU210A	Fairchild Semiconductor	Advanced Power MOSFET	Original	PDF
IRFU210A	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF
IRFU210A	Fairchild Semiconductor	Advanced Power MOSFET	Scan	PDF
IRFU210B	Fairchild Semiconductor	200V N-Channel MOSFET	Original	PDF
IRFU210B	Fairchild Semiconductor	200V N-Channel MOSFET	Original	PDF
IRFU210B	Fairchild Semiconductor	200V N-Channel MOSFET	Original	PDF

IRFU210 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
EIA-541 Abstract: IRFR120 IRFU120 U120 rectifier diode assembly irf p channel Text: PD - 95068A IRFR210PbF IRFU210PbF • Lead-Free Document Number: 91268 12/9/04 www.vishay.com 1 IRFR/U210PbF Document Number: 91268 www.vishay.com 2 IRFR/U210PbF Document Number: 91268 www.vishay.com 3 IRFR/U210PbF Document Number: 91268 www.vishay.com 4 IRFR/U210PbF	Original	PDF	5068A IRFR210PbF IRFU210PbF IRFR/U210PbF 12-Mar-07 EIA-541 IRFR120 IRFU120 U120 rectifier diode assembly irf p channel
IRFU210 Abstract: IRFR210 SiHFR210 SiHFR210-E3 SiHFU210 Text: IRFR210, IRFU210, SiHFR210, SiHFU210 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 10 V 1.5 • Repetitive Avalanche Rated • Surface Mount (IRFR210, SiHFR210) Qg (Max.) (nC) 8.2 Qgs (nC) 1.8	Original	PDF	IRFR210, IRFU210, SiHFR210 SiHFU210 2002/95/EC O-252) IRFU210 IRFR210 SiHFR210-E3
Device Code SE Abstract: EIA-541 IRFR120 IRFU120 U120 IRF p-CHANNEL Text: PD - 95068A IRFR210PbF IRFU210PbF • Lead-Free www.irf.com 1 12/9/04 IRFR/U210PbF 2 www.irf.com IRFR/U210PbF www.irf.com 3 IRFR/U210PbF 4 www.irf.com IRFR/U210PbF www.irf.com 5 IRFR/U210PbF 6 www.irf.com IRFR/U210PbF Peak Diode Recovery dv/dt Test Circuit	Original	PDF	5068A IRFR210PbF IRFU210PbF IRFR/U210PbF Wavefor10PbF Device Code SE EIA-541 IRFR120 IRFU120 U120 IRF p-CHANNEL
Untitled Abstract: No abstract text available Text: IRFR210, IRFU210, SiHFR210, SiHFU210 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRFR210, SiHFR210) • Straight Lead (IRFU210, SiHFU210)	Original	PDF	IRFR210, IRFU210, SiHFR210 SiHFU210 2002/95/EC O-252)
IRFR210 Abstract: IRFU210 SiHFR210 SiHFR210-E3 SiHFU210 Text: IRFR210, IRFU210, SiHFR210, SiHFU210 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 10 V 1.5 • Repetitive Avalanche Rated • Surface Mount (IRFR210/SiHFR210) Qg (Max.) (nC) 8.2 Qgs (nC) 1.8	Original	PDF	IRFR210, IRFU210, SiHFR210 SiHFU210 IRFR210/SiHFR210) IRFU210/SiHFU210) O-252) O-251) 18-Jul-08 IRFR210 IRFU210 SiHFR210-E3
Untitled Abstract: No abstract text available Text: IRFR210, IRFU210, SiHFR210, SiHFU210 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 RDS(on) () VGS = 10 V 1.5 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single D Dynamic dV/dt Rating	Original	PDF	IRFR210, IRFU210, SiHFR210 SiHFU210 O-252) O-251)
IRFR210B Abstract: IRFU210B Text: IRFR210B / IRFU210B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to	Original	PDF	IRFR210B IRFU210B IRFU210B
Untitled Abstract: No abstract text available Text: PD - 95068A IRFR210PbF IRFU210PbF • Lead-Free Document Number: 91268 12/9/04 www.vishay.com 1 IRFR/U210PbF Document Number: 91268 www.vishay.com 2 IRFR/U210PbF Document Number: 91268 www.vishay.com 3 IRFR/U210PbF Document Number: 91268 www.vishay.com 4 IRFR/U210PbF	Original	PDF	5068A IRFR210PbF IRFU210PbF IRFR/U210PbF 08-Mar-07
IRFU210A Abstract: No abstract text available Text: IRFR210B / IRFU210B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to	Original	PDF	IRFR210B IRFU210B IRFU210B O-251 IRFU210BTLTU FP001 IRFU210A
IRFR210 Abstract: IRFU210 SiHFR210 SiHFR210-E3 SiHFU210 Text: IRFR210, IRFU210, SiHFR210, SiHFU210 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 10 V 1.5 • Repetitive Avalanche Rated • Surface Mount (IRFR210/SiHFR210) Qg (Max.) (nC) 8.2 Qgs (nC) 1.8	Original	PDF	IRFR210, IRFU210, SiHFR210 SiHFU210 IRFR210/SiHFR210) IRFU210/SiHFU210) O-252) O-251) 18-Jul-08 IRFR210 IRFU210 SiHFR210-E3
irfu210 Abstract: No abstract text available Text: IRFR210, IRFU210, SiHFR210, SiHFU210 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 10 V 1.5 • Repetitive Avalanche Rated • Surface Mount (IRFR210/SiHFR210) Qg (Max.) (nC) 8.2 Qgs (nC) 1.8	Original	PDF	IRFR210, IRFU210, SiHFR210 SiHFU210 IRFR210/SiHFR210) IRFU210/SiHFU210) O-252) O-251) 12-Mar-07 irfu210
IRFR210TRPBF Abstract: No abstract text available Text: IRFR210, IRFU210, SiHFR210, SiHFU210 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRFR210, SiHFR210) • Straight Lead (IRFU210, SiHFU210)	Original	PDF	IRFR210, IRFU210, SiHFR210 SiHFU210 2002/95/EC O-252) IRFR210TRPBF
Untitled Abstract: No abstract text available Text: IRFR210, IRFU210, SiHFR210, SiHFU210 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 RDS(on) () VGS = 10 V 1.5 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single D Dynamic dV/dt Rating	Original	PDF	IRFR210, IRFU210, SiHFR210 SiHFU210 O-252) 2002/95/EC.
IRFR210TRPBF Abstract: IRFU21 91344 Text: IRFR210, IRFU210, SiHFR210, SiHFU210 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRFR210, SiHFR210) • Straight Lead (IRFU210, SiHFU210)	Original	PDF	IRFR210, IRFU210, SiHFR210 SiHFU210 2002/95/EC O-252) IRFR210TRPBF IRFU21 91344

IRFR210B Abstract: IRFU210B Text: IRFR210B / IRFU210B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to	Original	PDF	IRFR210B IRFU210B IRFU210B
Untitled Abstract: No abstract text available Text: IRFR210B / IRFU210B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to	Original	PDF	IRFR210B IRFU210B 10designs O-252 IRFR210BTF FP001
Untitled Abstract: No abstract text available Text: IRFR210, IRFU210, SiHFR210, SiHFU210 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRFR210, SiHFR210) • Straight Lead (IRFU210, SiHFU210)	Original	PDF	IRFR210, IRFU210, SiHFR210 SiHFU210 2002/95/EC O-252)
TO-252AA Package Abstract: irfu210pbf IRFR210PBF dpak code EIA-541 IRFR120 IRFU120 international rectifier code EIA 481 Text: PD - 95068A IRFR210PbF IRFU210PbF • Lead-Free 1 IRFR/U210PbF 2 IRFR/U210PbF D-Pak TO-252AA Package Outline Dimensions are shown in millimeters (inches) D-Pak (TO-252AA) Part Marking Information EXAMPLE: THIS IS AN IRFR120 WITH ASSEMBLY LOT CODE 1234 ASSEMBLED ON WW 16, 1999	Original	PDF	5068A IRFR210PbF IRFU210PbF IRFR/U210PbF O-252AA) IRFR120 IRFU120 TO-252AA Package irfu210pbf IRFR210PBF dpak code EIA-541 IRFR120 IRFU120 international rectifier code EIA 481
AN-994 Abstract: IRFR210 IRFU210 Text: PD-9.526C International S Rectifier IRFR210 IRFU210 HEXFET Power MOSFET • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Surface Mount IRFR210 Straight Lead (IRFU210) Available in Tape & Reel Fast Switching Ease of Paralleling	OCR Scan	PDF	IRFR210 IRFR210) IRFU210) AN-994 IRFR210 IRFU210
u210 Abstract: xrd6 irfr210 N-Channel Power MOSFETs IRFR211 Text: IRFR210/211 IRFU210/211 N-CHANNEL POWER MOSFETS FEATURES D -P A K • Lower R d s ON • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability	OCR Scan	PDF	IRFR210/211 IRFU210/211 IRFR210/U210 IRFR211/U211 7clb414E 00Eflb3Q u210 xrd6 irfr210 N-Channel Power MOSFETs IRFR211
IRFR210 Abstract: IRFR212 IRFU210 IRFU212 UJ31 irfh212 k 3525 MOSFET Text: h e D I MASS4S3 aaafie^s i I • INTERNATIONAL RECTIFIER ■ Data Sheet No. PD-9.526A T-35-25 INTERNATIONAL RECTIFIER IIO R I AVALANCHE AND dv/dt RATED IRFRSIO IRFR21S IRFU210 IRFUSiS HEXFET TRANSISTORS :H N -C H A N N E L Product Summary 200 Volt, 1.5 Ohm HEXFET	OCR Scan	PDF	t-35-25 IRFU210 IRFR210, IRFR212, IRFU210, IRFU212 IRFR210TR IRFR210 IRFR212 IRFU210 UJ31 irfh212 k 3525 MOSFET
TO-251AA Abstract: ipak Text: International H EXFET Power MOSFETs H^IRectìfier I-Pak I-Pak TO-251A A N-Channel Part Number IRFU014 IRFU024 IRFU110 IRFU120 IRFU210 IRFU220 IRFU214 IRFU224 IRFU310 IRFU320 IRFU420 IRFUC20 V(BR)DSS Drain-to-Source R DS(on) I q Continuous Breakdown On-State Drain Current	OCR Scan	PDF	O-251A IRFU014 IRFU024 IRFU110 IRFU120 IRFU210 IRFU220 IRFU214 IRFU224 IRFU310 TO-251AA ipak
U-212 Abstract: IRFR122 u212 Text: IRFR210/212 IRFU210/212 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • Lower Ros O N Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high tem perature reliability	OCR Scan	PDF	IRFR210/212 IRFU210/212 IRFR21 U-212 IRFR122 u212
1RFR210 Abstract: No abstract text available Text: International [»3 Rectifier GST • IN R MÖSSHS2 D ü lS b b 4 PD-9.526C IRFR210 IRFU210 HEXFET Power M O SFET Dynamic dv/dt Rating Repetitive Avalanche Rated Surface Mount IRFR210 Straight Lead (IRFU210) Available in Tape & Reel Fast Switching Ease of Paralleling	OCR Scan	PDF	IRFR210 IRFU210 IRFR210) IRFU210) VDS100 1RFR210

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IRFU210 Datasheets (25)

IRFU210 Datasheets Context Search

EIA-541

IRFU210

Device Code SE

Untitled

IRFR210

Untitled

IRFR210B

Untitled

IRFU210A

IRFR210

irfu210

IRFR210TRPBF

Untitled

IRFR210TRPBF

IRFR210B

Untitled

Untitled

TO-252AA Package

AN-994

u210

IRFR210

TO-251AA

U-212

1RFR210