IRFZ48 MOSFETS Search Results

IRFZ48 MOSFETS Result Highlights (5)

Part	Manufacturer	Description
TCK424G	Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G
TCK425G	Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G
TCK423G	Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G
TCK420G	Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G
TCK422G	Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G

IRFZ48 MOSFETS Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
BU271 Abstract: IRF540 24334 FSN0920 Contextual Info: Microsemi N-Channel MOSFETs Part Number ! IRFZ40 ! BU271 i FSN1606 FSF2506 FSF2606 ! IRFZ34 FSE3506 MSAER45N06A : IRFZ44 IRFZ48 MSAEZ58N06A 1 MSAFZ58N06A MSAFX76N07A ! MSAEX150N07E IRF510 1IRF520 IRF530 FSN1410 FSF2210 FSF2510 IRF540 FSE3510 MSAER38N10A MSAFR38N10A	OCR Scan	O-220 O-257 O-254 O-258 BU271 IRF540 24334 FSN0920	PDF
Contextual Info: PD - 95563 IRFZ48RPbF Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Drop in Replacement of the IRFZ48 for Linear/Audio Applications l Lead-Free Description	Original	IRFZ48RPbF IRFZ48 08-Mar-07	PDF
IRF530S Abstract: IRFZ48 IRFZ48RS IRL3103L IRFZ48RSPBF IRFZ48RL Contextual Info: PD - 95761 l l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Drop in Replacement of the IRFZ48 for Linear/Audio Applications Lead-Free IRFZ48RSPbF IRFZ48RLPbF HEXFET Power MOSFET	Original	IRFZ48 IRFZ48RSPbF IRFZ48RLPbF EIA-418. IRF530S IRFZ48 IRFZ48RS IRL3103L IRFZ48RSPBF IRFZ48RL	PDF
IRFZ48 Abstract: IRFZ48R Contextual Info: PD - 93958 IRFZ48R HEXFET Power MOSFET Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Drop in Replacement of the IRFZ48 for Linear/Audio Applications	Original	IRFZ48R IRFZ48 12-Mar-07 IRFZ48 IRFZ48R	PDF
IRFZ48 Contextual Info: PD - 95563 IRFZ48RPbF Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Drop in Replacement of the IRFZ48 for Linear/Audio Applications l Lead-Free Description	Original	IRFZ48RPbF IRFZ48 12-Mar-07 IRFZ48	PDF
IRFZ48 Abstract: IRF530S IRFZ48RS IRL3103L IRFZ48RL Contextual Info: PD - 95761 l l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Drop in Replacement of the IRFZ48 for Linear/Audio Applications Lead-Free IRFZ48RSPbF IRFZ48RLPbF HEXFET Power MOSFET	Original	IRFZ48 IRFZ48RSPbF IRFZ48RLPbF 12-Mar-07 IRFZ48 IRF530S IRFZ48RS IRL3103L IRFZ48RL	PDF
IRFZ48 Contextual Info: PD - 95563 IRFZ48RPbF Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Drop in Replacement of the IRFZ48 for Linear/Audio Applications l Lead-Free Description	Original	IRFZ48RPbF IRFZ48 O-220AB. O-220AB IRFZ48	PDF
IRFZ48RL Contextual Info: PD - 95761 l l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Drop in Replacement of the IRFZ48 for Linear/Audio Applications Lead-Free IRFZ48RSPbF IRFZ48RLPbF HEXFET Power MOSFET	Original	IRFZ48 IRFZ48RSPbF IRFZ48RLPbF 08-Mar-07 IRFZ48RL	PDF
Contextual Info: PD - 93958 IRFZ48R HEXFET Power MOSFET Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Drop in Replacement of the IRFZ48 for Linear/Audio Applications	Original	IRFZ48R IRFZ48 08-Mar-07	PDF
IRFZ48 Abstract: IRFZ48R Contextual Info: PD - 93958 IRFZ48R HEXFET Power MOSFET Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Drop in Replacement of the IRFZ48 for Linear/Audio Applications	Original	IRFZ48R IRFZ48 Th252-7105 IRFZ48 IRFZ48R	PDF
Contextual Info: IRFZ48, SiHFZ48 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.018 110 Qgs (nC) 29 Qgd (nC) 36 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated	Original	IRFZ48, SiHFZ48 2002/95/EC O-220AB O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
IRFZ48RL Contextual Info: PD - 94074 IRFZ48RS IRFZ48RL HEXFET Power MOSFET l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Drop in Replacement of the IRFZ48 for Linear/Audio Applications D VDSS = 60V RDS on = 0.018Ω	Original	IRFZ48RS IRFZ48RL IRFZ48 08-Mar-07 IRFZ48RL	PDF
Contextual Info: IRFZ48, SiHFZ48 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.018 110 Qgs (nC) 29 Qgd (nC) 36 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated	Original	IRFZ48, SiHFZ48 2002/95/EC O-220AB O-22electronic 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A	PDF
IRFZ48 Abstract: SiHFZ48 SiHFZ48-E3 IRFZ48 MOSFETs Contextual Info: IRFZ48, SiHFZ48 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 60 RDS(on) (Ω) VGS = 10 V 0.018 Qg (Max.) (nC) 110 Qgs (nC) 29 Qgd (nC) 36 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated	Original	IRFZ48, SiHFZ48 O-220 O-220 18-Jul-08 IRFZ48 SiHFZ48-E3 IRFZ48 MOSFETs	PDF

Contextual Info: IRFZ48, SiHFZ48 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 60 RDS(on) (Ω) VGS = 10 V 0.018 Qg (Max.) (nC) 110 Qgs (nC) 29 Qgd (nC) 36 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated	Original	IRFZ48, SiHFZ48 O-220 O-220 12-Mar-07	PDF
Contextual Info: IRFZ48, SiHFZ48 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.018 110 Qgs (nC) 29 Qgd (nC) 36 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated	Original	IRFZ48, SiHFZ48 2002/95/EC O-220AB O-22electronic 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A	PDF
Contextual Info: IRFZ48, SiHFZ48 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.018 110 Qgs (nC) 29 Qgd (nC) 36 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated	Original	IRFZ48, SiHFZ48 2002/95/EC O-220AB O-22electronic 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A	PDF
Contextual Info: IRFZ48, SiHFZ48 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.018 110 Qgs (nC) 29 Qgd (nC) 36 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated	Original	IRFZ48, SiHFZ48 2002/95/EC O-220AB O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
Contextual Info: IRFZ48, SiHFZ48 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.018 110 Qgs (nC) 29 Qgd (nC) 36 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated	Original	IRFZ48, SiHFZ48 2002/95/EC O-220AB O-220AB 11-Mar-11	PDF
IRFZ48 Abstract: IRFZ48RL IRFZ48RS IRFZ48 mosfet driver IRFZ44 TIF 122 Contextual Info: PD - 94074 IRFZ48RS IRFZ48RL HEXFET Power MOSFET l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Drop in Replacement of the IRFZ48 for Linear/Audio Applications D VDSS = 60V RDS on = 0.018Ω	Original	IRFZ48RS IRFZ48RL IRFZ48 12-Mar-07 IRFZ48 IRFZ48RL IRFZ48RS IRFZ48 mosfet driver IRFZ44 TIF 122	PDF
Contextual Info: IRFZ48, SiHFZ48 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.018 110 Qgs (nC) 29 Qgd (nC) 36 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated	Original	IRFZ48, SiHFZ48 2002/95/EC O-220AB O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
IRFZ48 Abstract: SiHFZ48 SiHFZ48-E3 Contextual Info: IRFZ48, SiHFZ48 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 60 RDS(on) (Ω) VGS = 10 V 0.018 Qg (Max.) (nC) 110 Qgs (nC) 29 Qgd (nC) 36 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated	Original	IRFZ48, SiHFZ48 O-220 O-220 18-Jul-08 IRFZ48 SiHFZ48-E3	PDF
Contextual Info: IRFZ48, SiHFZ48 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.018 110 Qgs (nC) 29 Qgd (nC) 36 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated	Original	IRFZ48, SiHFZ48 2002/95/EC O-220AB O-22electronic 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A	PDF
IEC 269-5 Contextual Info: IRFZ48S, IRFZ48L, SiHFZ48S, SiHFZ48L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 0.018 110 29 36 Single D DESCRIPTION S Third generation Power MOSFETs from Vishay utilize	Original	IRFZ48S, IRFZ48L, SiHFZ48S SiHFZ48L 2002/95/EC 18-Jul-08 IEC 269-5	PDF

IRFZ48 MOSFETS Search Results

IRFZ48 MOSFETS Result Highlights (5)

IRFZ48 MOSFETS Datasheets Context Search

BU271

IRF530S

IRFZ48

IRFZ48

IRFZ48

IRFZ48

IRFZ48RL

IRFZ48

IRFZ48RL

IRFZ48

IRFZ48

IRFZ48

IEC 269-5