IRG4PH40S Search Results

IRG4PH40S Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IRG4PH40S		International Rectifier	IGBT		Original	PDF

IRG4PH40S Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
transistor A55 Abstract: mount transistor A55 IRG4PH40 Contextual Info: PD -91808 IRG4PH40S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Extremely low on state voltage drop 1.0V typical at 5.0A • Extremely low Vce on variation from lot to lot • Industry standard TO-247AC package VCES = 1200V VCE(on) typ. = 1.46V	Original	IRG4PH40S O-247AC O-247AC transistor A55 mount transistor A55 IRG4PH40	PDF
IRG4PH40S Contextual Info: PD -91808 IRG4PH40S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Extremely low on state voltage drop 1.0V typical at 5.0A • Extremely low VCE on variation from lot to lot • Industry standard TO-247AC package VCES = 1200V VCE(on) typ. = 1.46V	Original	IRG4PH40S O-247AC O-247AC IRG4PH40S	PDF
IRG4PH40S Contextual Info: PD -91808 IRG4PH40S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Extremely low on state voltage drop 1.0V typical at 5.0A • Extremely low VCE on variation from lot to lot • Industry standard TO-247AC package VCES = 1200V VCE(on) typ. = 1.46V	Original	IRG4PH40S O-247AC O-247AC IRG4PH40S	PDF
300C Abstract: IRG4CH40SB IRG4PH40S Contextual Info: PD-91799A IRG4CH40SB IRG4CH40SB IGBT Die in Wafer Form C 1200 V Size 4 Standard Speed 6" Wafer G E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage Colletor-to-Emitter Breakdown Voltage	Original	PD-91799A IRG4CH40SB IRG4CH40SB IRG4PH40S 300C IRG4PH40S	PDF
2 SK 0243 Contextual Info: PD-91799A International IQR Rectifier IRG4CH40SB IRG4CH40SB IGBT Die in Wafer Form 1200 V Size 4 Standard Speed 6" Wafer Electrical Characteristics Wafer Form Parameter Description Guaranteed (Min/Max) (on) C ollector-to-Em itter Saturation Voltage 4.5V Max.	OCR Scan	IRG4CH40SB PD-91799A IRG4CH40SB IRG4PH40S 2 SK 0243	PDF
ir igbt 1200V 10A Abstract: 1kA IGBT 300C IRG4CH40SB IRG4PH40S Contextual Info: PD - 91799 IRG4CH40SB IRG4CH40SB IGBT Die in Wafer Form C 1200 V Size 4 Standard Speed 6" Wafer G E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage Colletor-to-Emitter Breakdown Voltage	Original	IRG4CH40SB IRG4CH40SB IRG4PH40S ir igbt 1200V 10A 1kA IGBT 300C IRG4PH40S	PDF
2 SK 0243 Abstract: 300C IRG4CH40SB IRG4PH40S Contextual Info: PD-91799A IRG4CH40SB IRG4CH40SB IGBT Die in Wafer Form C 1200 V Size 4 Standard Speed 6" Wafer G E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage Colletor-to-Emitter Breakdown Voltage	Original	PD-91799A IRG4CH40SB IRG4CH40SB IRG4PH40S 2 SK 0243 300C IRG4PH40S	PDF