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    IRGBC30U Price and Stock

    Infineon Technologies AG IRGBC30U

    IGBT UFAST 600V 23A TO-220AB
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    DigiKey IRGBC30U Tube 50
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    Infineon Technologies AG IRGBC30UD2

    IGBT W/DIODE 600V 23A TO-220AB
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    DigiKey IRGBC30UD2 Tube 50
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    International Rectifier IRGBC30U

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    Bristol Electronics IRGBC30U 50
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    Quest Components IRGBC30U 307
    • 1 $13.0275
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    IRGBC30U 40
    • 1 $21.8925
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    • 100 $18.0005
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    IRGBC30U Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRGBC30U International Rectifier UltraFast IGBT Original PDF
    IRGBC30U International Rectifier INSULATED GATE BIPOLAR TRANSISTOR Original PDF
    IRGBC30U International Rectifier UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Original PDF
    IRGBC30U Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRGBC30UD2 International Rectifier INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Original PDF
    IRGBC30UD2 International Rectifier UltraFast CoPack IGBT Original PDF
    IRGBC30UD2 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    IRGBC30U Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    LTA 702 N

    Abstract: C702 diode C703 diode diode c706 transistor c708 C706 diode DIODE C705 C705 diode transistor ge 703 IRGBC30UD2
    Text: PD - 9.796A IRGBC30UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features C VCES = 600V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for high operating frequency over 5kHz


    Original     		PDF IRGBC30UD2 O-220AB C-708 LTA 702 N C702 diode C703 diode diode c706 transistor c708 C706 diode DIODE C705 C705 diode transistor ge 703 IRGBC30UD2

    D-12

    Abstract: IRGBC30U mosfet 600v 10a to-220ab
    Text: PD - 9.682A IRGBC30U INSULATED GATE BIPOLAR TRANSISTOR Features UltraFast IGBT C • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve VCES = 600V VCE(sat) ≤ 3.0V


    Original     		PDF IRGBC30U O-220AB C-662 D-12 IRGBC30U mosfet 600v 10a to-220ab

    D-12

    Abstract: IRGBC30U
    Text: PD - 9.682A IRGBC30U INSULATED GATE BIPOLAR TRANSISTOR Features UltraFast IGBT C • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve VCES = 600V VCE(sat) ≤ 3.0V


    Original     		PDF IRGBC30U O-220AB C-662 D-12 IRGBC30U

    transistor c708

    Abstract: LTA 702 N C702 diode C706 diode diode c706 IRGBC30UD2 c705
    Text: Previous Datasheet Index Next Data Sheet PD - 9.796A IRGBC30UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features C VCES = 600V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes


    Original     		PDF IRGBC30UD2 O-220AB C-708 transistor c708 LTA 702 N C702 diode C706 diode diode c706 IRGBC30UD2 c705

    D-12

    Abstract: IRGBC30U
    Text: PD - 9.682A IRGBC30U INSULATED GATE BIPOLAR TRANSISTOR Features UltraFast IGBT C • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve VCES = 600V VCE(sat) ≤ 3.0V


    Original     		PDF IRGBC30U O-220AB C-662 D-12 IRGBC30U

    IRGBC30U

    Abstract: D-12
    Text: Previous Datasheet Index Next Data Sheet PD - 9.682A IRGBC30U INSULATED GATE BIPOLAR TRANSISTOR Features UltraFast IGBT C • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve


    Original     		PDF IRGBC30U O-220AB C-662 IRGBC30U D-12

    C702 diode

    Abstract: C705 LTA 702 N IRGBC30UD2 C704 diode C705 diode
    Text: PD - 9.796A IRGBC30UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features C VCES = 600V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for high operating frequency over 5kHz


    Original     		PDF IRGBC30UD2 O-220AB C-708 C702 diode C705 LTA 702 N IRGBC30UD2 C704 diode C705 diode

    IRGKI200F06

    Abstract: IRGNIN150M06 IRGKI120F06 IRGDDN600M06 IRGKI115U06 IRGBC20FD2 IRGTIN025M12 IRGTI140U06 IRGPC50U IRGKI165F06
    Text: IGBT Designer’s Manual Selection Guide B-1 Single Switch without Diode Current Rating A 500 5-10 11-15 IRGB420U IRGP420U 16-20 21-25 IRGB430U IRGP430U 26-30 31-40 600 900 1200 IRGBC20K IRGPC20K IRGBC20K-S IRGBC20M IRGBC20M-S IRGPC20M IRGBC20U IRGPC20U


    Original     		PDF IRGB420U IRGP420U IRGB430U IRGP430U IRGBC20K IRGPC20K IRGBC20K-S IRGBC20M IRGBC20M-S IRGPC20M IRGKI200F06 IRGNIN150M06 IRGKI120F06 IRGDDN600M06 IRGKI115U06 IRGBC20FD2 IRGTIN025M12 IRGTI140U06 IRGPC50U IRGKI165F06

    IRGKI165F06

    Abstract: IRGDDN600M06 IRGDDN600K06 IRF7311 IRGNIN075 IRFK6H054 IRF7601 IRLI2203N IRLML2803 IRLML5103
    Text: Index HEXFET Power MOSFETs Part Number International Rectifier ID R DS on V(BR)DSS Continuous On-State Drain-to-Source Drain Current Breakdown Voltage Resistance 25°C (Ω) (A) (V) ID Continuous Drain Current 70°C (A) RθJ A Max Thermal Resistance (°C/W)


    Original     		PDF OT-23) IRLML2402* IRLML2803 IRLML5103 IRLML6302* IRGKI165F06 IRGDDN600M06 IRGDDN600K06 IRF7311 IRGNIN075 IRFK6H054 IRF7601 IRLI2203N IRLML2803 IRLML5103

    TRANSISTOR 9642

    Abstract: 9544 transistor T0247 package what is fast IGBT transistor IRG4PC50U Equivalent transistors for IRG4PC50U IRG4BC20FD 600V 16 TO220 IRGPC40U irg4ph50ud IRGB440U
    Text: Quarterly Reliability Report for T0247 / T0220 Products Manufactured at IRGB IGBT / CoPack ISSUE.3. October 1997 IGBT / CoPack Quarterly Reliability Report Page 1 of 35 Contents 1 Introduction 2 Reliability Information 3 Environmental Test Results 4 Environmental Test Conditions / Schematics


    Original     		PDF T0247 T0220 IRG4BC20F IRG4BC20FD IRG4BC30F IRG4BC30FD IRG4BC40F IRG4BC20U IRG4BC20UD IRG4BC30U TRANSISTOR 9642 9544 transistor T0247 package what is fast IGBT transistor IRG4PC50U Equivalent transistors for IRG4PC50U IRG4BC20FD 600V 16 TO220 IRGPC40U irg4ph50ud IRGB440U

    IRGKI200F06

    Abstract: IRGNIN150M06 IRGTI165F06 IRGBC20FD2 IRGKI115U06 irgti140u06 IRG4PC40S IRGPH40FD2 IRG4BC30UD IRGNI115U06
    Text: IGBTs International Rectifier Max V CE on Collector-to-Emitter Collector-to-Emitter Voltage Voltage V CES Part Number (V) (V) IC Continuous Collector Current T C= 25°C T C = 100°C (A) (A) P Max. D Power Dissipation (W) Fax-on-Demand Low VCE(on) IGBTs for Low Frequency (DC ~ 1kHz) Power Applications


    Original     		PDF O-220AB IRG4BC40S IRGBC20S IRGBC30S IRGBC40S O-247AC IRG4PC40S IRGPC30S IRGPC40S 10-30kHz) IRGKI200F06 IRGNIN150M06 IRGTI165F06 IRGBC20FD2 IRGKI115U06 irgti140u06 IRG4PC40S IRGPH40FD2 IRG4BC30UD IRGNI115U06

    9544 transistor

    Abstract: TRANSISTOR 9642 IRG4PC50U irg4ph50ud igbt failure IRG4PC40UD2 HTGB IRGPH60UD2 IRGBC20FD rectifier IGBT
    Text: Quarterly Reliability Report for T0247 / T0220 Products Manufactured at IRGB IGBT / CoPack ISSUE.3. October 1997 IGBT / CoPack Quarterly Reliability Report Page 1 of 35 Contents 1 Introduction 2 Reliability Information 3 Environmental Test Results 4 Environmental Test Conditions / Schematics


    Original     		PDF T0247 T0220 assIRG4BC20FD IRG4BC30F IRG4BC30FD IRG4BC40F IRG4BC20U IRG4BC20UD IRG4BC30U IRG4BC30UD 9544 transistor TRANSISTOR 9642 IRG4PC50U irg4ph50ud igbt failure IRG4PC40UD2 HTGB IRGPH60UD2 IRGBC20FD rectifier IGBT

    3 phase dc control ir2130

    Abstract: igbt driver ir2130 circuit IR2130S smd 3 phase rectifier bridge MP816 Design Tips for IR2130 IR2130J IRGBC30KD AN-985 IR2130 APPLICATIONS
    Text: DESIGN TIPS International Rectifier DESIGN TIPS DT 93-6AJ ・APPLICATION ENG・ ・233 KANSAS ST.・ ・EL SEGUNDO,CA.90245・ ・TEL（310） ）322-3331・ ・FAX（310） ）322-3332 INTERNATIONAL RECTIFIER・ モーター駆動用に極小化した パワー･エレクトロニクス


    Original     		PDF 93-6AJ IR2130 O-220 IRGBC30UD2-S) IR2130S IR2130J Diagram-IR2130S) Diagram-IR2130J) 3 phase dc control ir2130 igbt driver ir2130 circuit smd 3 phase rectifier bridge MP816 Design Tips for IR2130 IRGBC30KD AN-985 IR2130 APPLICATIONS

    IRGBC30U

    Abstract: IRGCC30UE 91429
    Text: Previous Datasheet Index Next Data Sheet PD-9.1429 TARGET IRGCC30UE IRGCC30UE IGBT Die in Wafer Form C 600 V Size 3 Ultra-Fast Speed 5" Wafer G E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage


    Original     		PDF IRGCC30UE IRGCC30UE IRGBC30U IRGBC30U 91429

    IRGBC30U

    Abstract: IRGCC30UE
    Text: PD-9.1429 TARGET IRGCC30UE IRGCC30UE IGBT Die in Wafer Form C 600 V Size 3 Ultra-Fast Speed 5" Wafer G E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage Colletor-to-Emitter Breakdown Voltage


    Original     		PDF IRGCC30UE IRGCC30UE IRGBC30U IRGBC30U

    Untitled

    Abstract: No abstract text available
    Text: PD - 9.682A International M l Rectifier IRGBC30U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features • Switching-loss rating includes all "tail" losses V ces = • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency cun/e


    OCR Scan     		PDF IRGBC30U O-220AB 5S452 0G204S1 TQ-220AB

    VQE 23D

    Abstract: C668 transistor CQGS 100C IRGBC30U
    Text: International ¡»¡»IRectifier PD - 9.682A IRGBC30U INSULATED GATE BIPOLAR TRANSISTOR UltraFast 1GBT Features c • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve


    OCR Scan     		PDF IRGBC30U C-661 12-Turn-Off TQ-220AB VQE 23D C668 transistor CQGS 100C

    c609 transistor

    Abstract: Transistor C609 G657 IRGBC30U
    Text: PD - 9.682A bitemational [tor]Rectifier IRGBC30U INSULATED G ATE BIPOLAR TRANSISTOR UltraFast IGBT Features • Switching-loss rating includes all "tail* losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve


    OCR Scan     		PDF IRGBC30U O-220AB TQ-220AB c609 transistor Transistor C609 G657 IRGBC30U

    transistor ge 703

    Abstract: No abstract text available
    Text: PD - 9.796A International ! or!Rectifier IRGBC30UD2 UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features V ces = 600V • Switching-loss rating includes all "tail" losses • HEXFRED soft ultrafast diodes • Optimized for high operating frequency over 5kHz


    OCR Scan     		PDF IRGBC30UD2 T0220A 5S452 002D41Ã transistor ge 703

    transistor C734

    Abstract: C705 diode c734 DIODE C705 C734 transistor diode 7g2
    Text: PD - 9.796A bitemational [ÏÔR]Rectifier IRGBC30UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features V ces = 600V • Switching-loss rating includes all "tail" losses • HEXFRED soft ultrafast diodes


    OCR Scan     		PDF IRGBC30UD2 Para17 O-22QAB transistor C734 C705 diode c734 DIODE C705 C734 transistor diode 7g2

    IRGB430UD2

    Abstract: IRGTI140U06 CPV362MU IRGPC50U
    Text: Illl E S S I n t e r n a t i o n a l R e c t if i e r Insulated Gate Bipolar Transistors VCES Colector to Emitter Voltage Volts PMt Number M«*VcE(on) Colector to Emitter Voltage (Volts) IGBTs ICContinuous Colector Current Tc=25‘ C Tc=100*C (Amps) (Amps)


    OCR Scan     		PDF 30kHz) O-220AB O-247AC IRGB420UD2 IRGB430UD2 IRGP430UD2 IRGP440UD2 IRGP450UD2 IRGTI140U06 CPV362MU IRGPC50U

    Untitled

    Abstract: No abstract text available
    Text: PD-9.1429 International lö R Rectifier IRGCC30UE TARGET IRGCC30UE IGBT Die in Wafer Form 600 V Size 3 Ultra-Fast Speed 5" Wafer Electrical Characteristics Wafer Form Parameter Description Guaranteed (Min/Max) 3.3V Max. lc = 12A, T j = 25°C, V GE = 15V


    OCR Scan     		PDF IRGCC30UE 250pA, 250pA

    t593

    Abstract: No abstract text available
    Text: PRELIMINARY DATASHEET NO. PD-9.796 International iipRi R e c tifie r_ ir g b c 30 u d 2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast Co-Pack IGBT • Latch-proof • Simple gate drive • High operating frequency


    OCR Scan     		PDF D-6380 5S452 00EBDSS t593

    CPV362MU

    Abstract: No abstract text available
    Text: International ËüRectffier iGBTs UltraFast IGBTs for Higher Frequency 10 -3 0 k H z Pow er Applications High Efficiency/— Optimized for Pow er Conversion UltraFast •c Part Number V CES Collector to Emitter Voltage Majt VcE(on) Collector to Emitter


    OCR Scan     		PDF IRGB420U IRGB430U IRGB440U IRGP420U IRGP430U IRGP440U IRGP450U T0-220AB 247AC IRGB420UD2 CPV362MU