IRGMC50FU Search Results
IRGMC50FU Datasheets Context Search
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Contextual Info: IRGMC50FU Transistors N-Channel IGBT V BR CES (V)600 V(BR)GES (V) I(C) Max. (A)35 Absolute Max. Power Diss. (W)150 Minimum Operating Temp (øC)-55 Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Case.83 Thermal Resistance Junc-Amb.48 g(fe) Min. (S) Trans. admitt.21 |
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IRGMC50FU delay25nà time49nà time440nà me49nà | |
IRGMC50F
Abstract: IRGMC50FD IRGMC50FU 39AF
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OCR Scan |
IRGMC50F IRGMC50FD IRGMC50FU MIL-S-19500 O-254 IRGMC50F IRGMC50FU 39AF | |
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Contextual Info: International ! r]Rectifier PD-9.718A IRGMC50F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den sities than comparable bipolar transistors, while |
OCR Scan |
IRGMC50F IRGMC50FD IRGMC50FU O-254 4fiSS45S MIL-S-19500 |