IRGPC60K Search Results

transistor TO-3P Outline Dimensions

Abstract: IRGPC60K
Contextual Info: PD - 9.1296 International i^ ] Rectifier IRGPC60K Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Fea tu res • Short circuit rated - 10ps @ 125°C, Vqe = 15V • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz

Contextual Info: International jag Rectifier P D - 9.1296 IRGPC60K INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT Features • Short circuit rated - 10|j s @ 125°C, Vge = 15V • Switching-loss rating includes all "tail" losses • Optimized lor high operating frequency over 5kHz

IRGKI165F06

Abstract: IRGDDN600M06 IRGDDN600K06 IRF7311 IRGNIN075 IRFK6H054 IRF7601 IRLI2203N IRLML2803 IRLML5103
Contextual Info: Index HEXFET Power MOSFETs Part Number International Rectifier ID R DS on V(BR)DSS Continuous On-State Drain-to-Source Drain Current Breakdown Voltage Resistance 25°C (Ω) (A) (V) ID Continuous Drain Current 70°C (A) RθJ A Max Thermal Resistance (°C/W)

IRGKI200F06

Abstract: IRGNIN150M06 IRGTI165F06 IRGBC20FD2 IRGKI115U06 irgti140u06 IRG4PC40S IRGPH40FD2 IRG4BC30UD IRGNI115U06
Contextual Info: IGBTs International Rectifier Max V CE on Collector-to-Emitter Collector-to-Emitter Voltage Voltage V CES Part Number (V) (V) IC Continuous Collector Current T C= 25°C T C = 100°C (A) (A) P Max. D Power Dissipation (W) Fax-on-Demand Low VCE(on) IGBTs for Low Frequency (DC ~ 1kHz) Power Applications

IRGPH40KD2

Abstract: IRGPC30KD2
Contextual Info: I n t e r n a t io n a l R e c t if ie r IGBTs I Insulated Gate Bipolar Transistors VCES Colador to EmitlarVoltaga Volt. Pm ULTRA-FAST M»x VcEfon) Colador to EmitterVohag* (Vota) ICContinuom Colador Current Tc*25*C Tc=KKCC (Ampt) (Ampi) Pq Mu Dissipation