IRHN8250
Abstract: IRHN7250
Text: Provisional Data Sheet PD 9.679C IRHN7250 IRHN8250 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL MEGA RAD HARD Ω , MEGA RAD HARD HEXFET 200 Volt, 0.10Ω International Rectifier’s MEGA RAD HARD technology HEXFET power MOSFETs demonstrate excellent
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IRHN7250
IRHN8250
F-360
IRHN8250
IRHN7250
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IRHN8250
Abstract: JANSR2N7269U IRHN3250 IRHN4250 IRHN7250
Text: PD - 90679F IRHN7250 JANSR2N7269U 200V, N-CHANNEL REF:MIL-PRF-19500/603 RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-1 RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number IRHN7250 IRHN3250 IRHN4250 IRHN8250 Radiation Level 100K Rads (Si) 300K Rads (Si)
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90679F
IRHN7250
JANSR2N7269U
MIL-PRF-19500/603
IRHN3250
IRHN4250
IRHN8250
1000K
IRHN8250
JANSR2N7269U
IRHN3250
IRHN4250
IRHN7250
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2N7269U
Abstract: IRHN7250 IRHN8250 JANSH2N7269U JANSR2N7269U
Text: PD - 90679E IRHN7250 IRHN8250 JANSR2N7269U JANSH2N7269U REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR 200Volt, 0.100Ω Ω, MEGA RAD Hard REF:MIL-PRF-19500/603 N CHANNEL MEGA RAD HardTM TM HEXFET® Inter national Rectifier’s RAD Hard technology
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90679E
IRHN7250
IRHN8250
JANSR2N7269U
JANSH2N7269U
200Volt,
MIL-PRF-19500/603)
1x106
2N7269U
IRHN7250
IRHN8250
JANSH2N7269U
JANSR2N7269U
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Untitled
Abstract: No abstract text available
Text: PD - 90679D IRHN7250 IRHN8250 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N CHANNEL MEGA RAD HARD 200Volt, 0.100Ω Ω , MEGA RAD HARD HEXFET International Rectifier’s RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total
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90679D
200Volt,
1x106
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IRHN3250
Abstract: IRHN4250 IRHN7250 IRHN8250 JANSR2N7269U
Text: PD - 90679G IRHN7250 JANSR2N7269U 200V, N-CHANNEL REF:MIL-PRF-19500/603 RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-1 RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number IRHN7250 IRHN3250 IRHN4250 IRHN8250 Radiation Level 100K Rads (Si) 300K Rads (Si)
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90679G
IRHN7250
JANSR2N7269U
MIL-PRF-19500/603
IRHN3250
IRHN4250
IRHN8250
1000K
IRHN3250
IRHN4250
IRHN7250
IRHN8250
JANSR2N7269U
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Untitled
Abstract: No abstract text available
Text: PD - 90679G IRHN7250 JANSR2N7269U 200V, N-CHANNEL REF:MIL-PRF-19500/603 RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-1 RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number IRHN7250 IRHN3250 IRHN4250 IRHN8250 Radiation Level 100K Rads (Si) 300K Rads (Si)
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90679G
IRHN7250
JANSR2N7269U
MIL-PRF-19500/603
IRHN3250
IRHN4250
IRHN8250
1000K
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F347
Abstract: IRHN7250 IRHN8250
Text: Previous Datasheet Index Next Data Sheet Provisional Data Sheet PD 9.679C IRHN7250 IRHN8250 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL MEGA RAD HARD Ω , MEGA RAD HARD HEXFET 200 Volt, 0.10Ω International Rectifier’s MEGA RAD HARD technology
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IRHN7250
IRHN8250
F-360
F347
IRHN7250
IRHN8250
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IRF460
Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
Text: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,
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30am-5
44-0-1737-2com
DB8029C
IRF460
SMD TRANSISTOR MARKING k38
smd transistor k38
we 751002 s
SMD-6C
transistor smd k45
RAD-HARD igbt
IRF3504
afl2805s manufactured by international rectifier
550-065
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IRFM9034
Abstract: irh7c50se IRFM460 irhy IRFE310 international rectifier p JANSR2N7261
Text: International Rectifier Government and Space Products BVDSS Part Number Channel V RDS(on) (Ω) PD @ TC = 25°C ID @ T =100°C C (A) ID @ T =25 C (A) Total Dose Rating Rads (Si) (W) Fax-on-Demand HEXFET Power MOSFETs to view a data sheet, click on the part number
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IRHE7110
IRHE7130
IRHE7230
IRHE8110
IRHE8130
IRHE8230
IRHE9130
IRHE9230
IRHG7110
IRHG6110
IRFM9034
irh7c50se
IRFM460
irhy
IRFE310
international rectifier p
JANSR2N7261
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10RIA10
Abstract: HFA40HF120 irfm9034 10RIA100 10RIA120 10RIA20 10RIA40 10RIA60 JANSR2N7261 70HF
Text: Index International Rectifier Government and Space Products Level of Quality Part Number Rectifiers Voltage Current CECC Issue Issue Assessment and CECC V (A) Specs Number Date 50 000 Screen Level Options Fax-on-Demand CECC-Qualifed, Europe Mfg. in Italy
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DO-203AA
HFA40HF120
HFA40HF60
O-254AA
HFA35HB120
HFA35HB120C
HFA35HB60
HFA35HB60C
O-258AA
HFA45HC120C
10RIA10
HFA40HF120
irfm9034
10RIA100
10RIA120
10RIA20
10RIA40
10RIA60
JANSR2N7261
70HF
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2N6764 JANTX
Abstract: 91447 IR2113L
Text: Government / Space Products Catalog of Available Documents Revised 5/11/99 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100 Radiation-Hardened HEXFET Description Datasheets IRH7054 IRH7130 IRH7150 IRH7230 IRH7250 IRH7250SE IRHF7330SE IRHF7430SE IRH7450
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IRH7054
IRH7130
IRH7150
IRH7230
IRH7250
IRH7250SE
IRHF7330SE
IRHF7430SE
IRH7450
IRH7450SE
2N6764 JANTX
91447
IR2113L
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2N6782 JANTX
Abstract: 2N6758 JANTX 2N6756 JANTX 2N6766 JANTX 2N6792 JANTX 2N6796U 60022 2N7236 2n6806 jantx 2N6770 JANTX
Text: Government / Space Products Catalog of Available Documents Revised 8/27/98 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100 Radiation-Hardened HEXFET Document # Pages Date IRH7054 90883 5 Oct-96 IRH7150 90677 13 Oct-96 IRH7250 90697 13 Oct-96 IRH7450SE
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IRH7054
Oct-96
IRH7150
IRH7250
IRH7450SE
Nov-96
IRH8054
2N6782 JANTX
2N6758 JANTX
2N6756 JANTX
2N6766 JANTX
2N6792 JANTX
2N6796U
60022
2N7236
2n6806 jantx
2N6770 JANTX
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Untitled
Abstract: No abstract text available
Text: Provisional Data Sheet PD 9.679C International I R Rectifier irhn725o dv/dt RATED HEXFET TRANSISTOR IRHN8250 REPETITIVE AVALANCHE AND N-CHANNEL MEGA RAD HARD Product Summary 200 Volt, 0.1 On, MEGA RAD HARD HEXFET International Rectifier’s M EG A RAD HARD technology
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irhn725
IRHN8250
3150utram
DD2b032
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2N7334
Abstract: irfg9110 H24 SMD
Text: Other Products from IR Government and Space H EX FET Power M O SFETs Radiation Hardened N - and P-Channel Part • d@ T ,= 25°C Iq@ Tq = 100*C A (A) RthJC Max. (K/W) Pd@ Tq = 25°C Number BVq ss (V) RDS(on) (Ohms) IRHE7110 100 IRHE8110 IRHE7130 IRHE8130
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IRHE7110
IRHE8110
IRHE7130
IRHE8130
IRHE7230
IRHE8230
IRHE9130
IRHN7054
IRHN8054
IRHN7130
2N7334
irfg9110
H24 SMD
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MO-D36AB
Abstract: IRF9510 SEC IRF510 SEC 2n6845 jantx D 10.7 A IRF540 smd irf740 STAND FOR irfm9230 2N7237 JANTXV BC 542
Text: Government/ Space Products Products From ir Life, Power-Age, Environmental and Military Testing Capabilities — USA MIL-S-19500 Qualified Life Tests and Power-Age Capabilities A. H ig h te m p e ra tu re sto ra g e life te stin g up to 2 0 0 ° C . 0 . H T R B te st c a p a b ilitie s o v e r 2 5,00 0 p o s itio n s for V G S a n d for
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MIL-S-19500
T0-254AA
T0-204AA/AE
MO-D36AB
IRF9510 SEC
IRF510 SEC
2n6845 jantx
D 10.7 A
IRF540 smd
irf740 STAND FOR
irfm9230
2N7237 JANTXV
BC 542
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JANSR2N7261
Abstract: No abstract text available
Text: International lÜRectifier Government and Space HEXFET Power MOSFETs Radiation Hardened N & P Channel R tltJC Max. Pd@ Case rc = ioo°c TC = 25°C Outline A (K/W) (W) Number (1) (2) Pari b v dss Number (V) RDS(on) (Ohms) IRHE7110 100 0.60 3.1 2.0 11 11 IRHE8110
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IRHE7110
IRHE8110
IRHE7130
IRHE8130
IRHE7230
IRHE8230
IRHE9130
IRHN7054
IRHN8054
IRHN7130
JANSR2N7261
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Untitled
Abstract: No abstract text available
Text: Government and Space Products International IO R Rectifier • d Part Number Tc=2S°C RDS on b VD$S (A) (V) T f=100°C (A) Total Dose Rating Rads (Si) p @ Ic = 25°C (W) HEXFET ® Power MOSFETs Fax Case on Demand Outline Key Number R a d ia tio n H a rd e n e d
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IRHN7054
IRHN7130
RHN7I50
IRHN7230
RHN7250
IRHN7450
IRHN8054
N8I30
RHN8I50
IRHN8230
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IRHE7110
Abstract: IRHE7130 IRHE7230 IRHE8110 IRHE8130 IRHE8230 IRHE9130 IRHN7054 IRHN7130 1RHF8130
Text: 4flss4s2 DQlblbb 2Û4 - From ,R HEXFET Paît Number bvdss V RDS(on) (OHMS) RAD HARD id @ Tq = 25°C •d @ Tc = 100”C RthJC Max. Pd @ Tc = 25-C (A) (A) (K/W) (W) IRHE7110 100 0.60 3.1 2.0 11 11 IRHE8110 100 0.60 3.1 2.0 11 11 22 IRHE7130 100 0.18 8.0 5.0
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4flss452
IRHE7110
IRHE8110
IRHE7130
IRHE8130
IRHE7230
IRHE8230
IRHE9130
IRHN7054
IRHN80S4
IRHN7130
1RHF8130
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Untitled
Abstract: No abstract text available
Text: INTE RNATIONAL RECTIFIER 2bE D • HflSSMSS OülOlfi? Q ■ Government/ Space Products T-39-ôl International ^¡Rectifier Radiation Hard HEXFETs N-Channel V d s Drain Part Number Source Voltage Volts On-sitata Resistance (Ohms) IRHN7150 IRHN8150 IRHN7250
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T-39-Ã
IRHN7150
IRHN8150
IRHN7250
IRHN8250
IRHN7450
IRHN8450
IRHE7110
IRHE8110
IRHE7130
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Untitled
Abstract: No abstract text available
Text: I n t e r n a t io n a l R e c t if ie r Government and Space Products Part Numb« Wffl bvdss Vota ROS(on) (Ohm) ID* TC«25" 4A"P*) Iq O TolOO* (Amp») Total Dow Riling Rids (St) Pq O Tc»2P (Witts) Fu-ooDwnmd Numbtr _ _ _ _ _ _ _ -_ _ _ _ _ _ _ _ _ _ _
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IRHE7110
IRHE8110
IRHE7130
IRHE8130
IRHE7230
IRHE8230
IRHE9130
IRHE9230
IRHN7054
IRHN8054
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H-312
Abstract: No abstract text available
Text: Data Sheet No. PD-9.679B INTERNATIONAL RECTIFIER IO R AVALANCHE ENERGY AND dv/dt RATED HEXFET TRANSISTORS IRHIM7250 IRHN8S50 N-CHANNEL MEGA RAD HARD 200 Volt, 0.10», MEGA RAD HARD HEXFET International Rectifier’s M EG A RAD HARD Technology HEXFETs demonstrate excellent threshold voltage stability
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IRHIM7250
IRHN8S50
H-321
IRHN7250,
IRHN8250
H-322
H-312
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