IRL 1540 N Search Results

IrL 1540 N

Abstract: IrL 1520 N IrL 1540 g irl 1520 AN-1784 U 1560 SMA428A AN1784
Contextual Info: AN1784 APPLICATION NOTE AN LNA OPTIMIZED AT 1575 MHz USING THE Si MMIC SMA428A N. Micalizzi, F. Caramagno, G. Privitera Table 1: Data for GPS Application f = 1575 MHz Parameters Value Unit Vcc 2.7 V Icc 5.9 mA 1.45 dB Gain 18 dB RLin 6.7 dB Noise Figure

Contextual Info: TriQuint €► Advance Product Information SEMICONDUCTOR« 17-21 GHz Intermediate Power Amplifier Key Features and Performance 0.25um pHEMT Technology TGA9088A-EPU Primary Applications Satellite Systems 17-21 GHz Frequency Range 22 dBm @ P2dB Nominal Pout

IrL 1540 N

Abstract: 1540MHz F1540 ATC100 UGF15030 Cree Microwave ZENER 26v 10UF 22UF
Contextual Info: UGF15030 30W, 1435-1540 MHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for base station applications in the frequency band 1435 to 1540 MHz. Rated with a minimum output power of 30W. It is ideal for CDMA, TDMA, WCDMA, GSM, and Multi-Carrier

IrL 1540 N

Abstract: IrL 1540 g AN1955 MRF8S18120HR3 MRF8S18120HSR3 J-041 GPS 112 860F MRF8S18120H
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8S18120H Rev. 1, 10/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S18120HR3 MRF8S18120HSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 1805 to 1880 MHz. Can be used in Class AB and Class C for all

IrL 1540 N

Abstract: A114 A115 AN1955 C101 JESD22 MRF8S18120HR3 MRF8S18120HSR3 C3225X7R2A225KT IrL 1540 g
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8S18120H Rev. 0, 9/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF8S18120HR3 MRF8S18120HSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 1805 to 1880 MHz. Can be used in Class AB and Class C for

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8S18120H Rev. 1, 10/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S18120HR3 MRF8S18120HSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 1805 to 1880 MHz. Can be used in Class AB and Class C for all

Contextual Info: PGE 609 02 Erbium-Doped Fiber Amplifier for Analog Applications Key Features • Operating wavelength window: 1540-1560 nm • Saturation output power: +16 dBm • Low noise figure, typ.<5.0 dB • Input and output power monitors • High input and output return losses

Contextual Info: PGE 609 05 Erbium-Doped Fiber Amplifier for Analog Applications Key Features • Operating wavelength window: 1540-1560 nm • Saturation output power: +19 dBm • Low noise figure, typ.<5.0 dB • Input and output power monitors • High input and output return losses

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7S16150H Rev. 1, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S16150HR3 MRF7S16150HSR3 Designed for WiMAX base station applications with frequencies up to

IrL 1540 N

Abstract: wimax spectrum mask irl 1520 25VDD ATC100B470BT500XT A114 A115 AN1955 C101 JESD22
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7S16150H Rev. 1, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S16150HR3 MRF7S16150HSR3 Designed for WiMAX base station applications with frequencies up to

IRL 1630

Abstract: IrL 1540 N A114 A115 AN1955 C101 JESD22 MRF7S16150HR3 MRF7S16150HSR3 MRF7S16150HR
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7S16150H Rev. 0, 6/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S16150HR3 MRF7S16150HSR3 Designed for WiMAX base station applications with frequencies up to

Contextual Info: SMA661AS GPS HIGH GAIN LNA ICs PRELIMINARY DATA GENERAL FEATURES • LOW NOISE FIGURE 1.4 dB @ 1.575 GHz ■ HIGH GAIN 17 dB @ 1.575 GHz ■ POWER DOWN FUNCTION ■ TEMPERATURE COMPENSATED ■ UNCONDITIONALLY STABLE ■ INTEGRATED OUTPUT MATCHING ■ 70 GHz Silicon Germanium TECHNOLOGY

IrL 1540 N

Abstract: SMA661AS SMA661ASTR SMA661
Contextual Info: SMA661AS GPS HIGH GAIN LNA ICs PRELIMINARY DATA GENERAL FEATURES • LOW NOISE FIGURE 1.4 dB @ 1.575 GHz ■ HIGH GAIN 17 dB @ 1.575 GHz ■ POWER DOWN FUNCTION ■ TEMPERATURE COMPENSATED ■ UNCONDITIONALLY STABLE ■ INTEGRATED OUTPUT MATCHING ■ ESD PROTECTION ± 2kV HBM

178 09T

Abstract: capacitor mallory 1000 watt Motorola power supply RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ 100 watt transistor transistor MTBF CAPACITOR chip murata mtbf RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ bd136 equivalent Mallory Capacitor
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor Designed for 26 volts microwave large-signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM equipment operating in the range 1400-1600 MHz.

atx smps schematic diagram

Abstract: 4330D IrL 1540 N ATX SMPS schematics MC33152 MOSFET IRL NCP4330 NCP4330DR2G TL431 ac-dc inverter applications
Contextual Info: NCP4330 Post Regulation Driver The NCP4330 houses a dual MOSFET driver intended to be used as a companion chip in AC−DC or DC−DC multi−output post regulated power supplies. Being directly fed by the secondary AC signal, the device keeps power dissipation to the lowest while reducing the

4330D

Contextual Info: NCP4330 Post Regulation Driver The NCP4330 houses a dual MOSFET driver intended to be used as a companion chip in AC−DC or DC−DC multi−output post regulated power supplies. Being directly fed by the secondary AC signal, the device keeps power dissipation to the lowest while reducing the

4330D

Abstract: IrL 1540 N MC33152 NCP4330 NCP4330DR2G TL431 schematic SMPS set top box 30 volts
Contextual Info: NCP4330 Post Regulation Driver The NCP4330 houses a dual MOSFET driver intended to be used as a companion chip in AC−DC or DC−DC multi−output post regulated power supplies. Being directly fed by the secondary AC signal, the device keeps power dissipation to the lowest while reducing the

CAPACITOR chip murata mtbf

Abstract: BD136
Contextual Info: MOTOROLA Order this document by MRF15090/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon RF Power Transistor LAST SHIP 22MAR02 The RF Line MRF15090 Designed for 26 volts microwave large–signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM

capacitor mallory

Abstract: RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ 1000 watt Motorola power supply RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ 100 watt transistor bd136 equivalent rohm mtbf
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor MRF15030 Designed for 26 volts microwave large-signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM equipment operating in the range 1400-1600 MHz.

CAPACITOR chip murata mtbf

Abstract: MUR5120 irl 1520 MUR5120T3 IrL 1540 N 462 variable capacitor mallory capacitor 1500 uF CAPACITOR chip mtbf MRF15090 rohm mtbf
Contextual Info: MOTOROLA Order this document by MRF15090/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF15090 Designed for 26 volts microwave large–signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM

BD136

Contextual Info: MOTOROLA Order this document by MRF15090/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon RF Power Transistor LAST SHIP 15MAR02 The RF Line MRF15090 Designed for 26 volts microwave large–signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM

CAPACITOR chip murata mtbf

Abstract: IrL 1540 N CAPACITOR chip mtbf transistor bd135 transistor motorola 351 BD135 BD136 MJD47 MRF15090 MUR5120T3
Contextual Info: MOTOROLA Order this document by MRF15090/D SEMICONDUCTOR TECHNICAL DATA Advance Information The RF Line MRF15090 NPN Silicon RF Power Transistor Designed for 26 volts microwave large–signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM

Contextual Info: MOTOROLA Order this document by MRF15090/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF15090 Designed for 26 volts microwave large–signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM

CAPACITOR chip murata mtbf

Abstract: IrL 1540 N CAPACITOR chip mtbf motorola 1550 BD135 BD136 MJD47 MRF15090 MUR5120T3 MURATA ERIE CAPACITOR
Contextual Info: MOTOROLA Order this document by MRF15090/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF15090 Designed for 26 volts microwave large–signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM