IRLI3303 Search Results

IRLI3303 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IRLI3303		International Rectifier	HEXFET Power Mosfet	Original	PDF	153.23KB	8

Catalog Datasheet	Type	Document Tags	PDF
IRFI840G Abstract: IRL3303 IRLI3303 Contextual Info: PD - _ IRLI3303 PRELIMINARY HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated VDSS = 30V RDS on = 0.026Ω ID = 25A Description	Original	IRLI3303 O-220 IRFI840G IRL3303 IRLI3303	PDF
Contextual Info: International S Rectifier PD — IRLI3303 p r e l im in a r y HEXFET Power MOSFET • Logic-Level Gate Drive • Advanced Process Technology • Isolated Package • High Voltage Isolation = 2.5KVRMS • Sink to Lead Creepage Dist. = 4.8mm • Fully Avalanche Rated	OCR Scan	IRLI3303 1897IR	PDF
IRFI840G Abstract: IRL3303 IRLI3303 Contextual Info: Previous Datasheet Index Next Data Sheet PD - _ IRLI3303 PRELIMINARY HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated VDSS = 30V	Original	IRLI3303 O-220 IRFI840G IRL3303 IRLI3303	PDF
Contextual Info: International 1 ]Rectifier PD — IR L13303 p re lim in a ry HEXFET® Power MOSFET • • • • • • Logic-Level Gate Drive Ad van ced P rocessTechnology Isolated Package High Voltage Isolation = 2.5 K V R M S Sink to Lead Creepage Dist. = 4.8mm	OCR Scan	L13303	PDF