IS 208 Search Results

Contextual Info: 208 Series FDDI Duplex Fiber Optic Connector Methode 208 Series lightwave duplex connector is in full compliance with the ANSI X3T9.5 FDDI PMD specification. Methode FDDI connector features a sliding keyway which is integrated into the connector body. The keyway is

HSM198S

Abstract: DSA003636
Contextual Info: HSM198S Silicon Schottky Barrier Diode for Various Detector ADE-208-090C Z Rev. 3 Oct. 2001 Features • Detection efficiency is very good. • Small temperature coefficient. • HSM198S which is interconnected in series configuration is designed for balanced mixer use.

Hitachi DSA002789

Contextual Info: HSM198S Silicon Schottky Barrier Diode forVarious Detector, High speed switching ADE-208-090B Z Rev. 2 Features • • • • Detection efficiency is very good. Small temperature coefficient. HSM198S which is interconnected in series configuration is designed for balanced mixer use.

bidirectional diode

Abstract: 101 MEMORY A236
Contextual Info: Pinout of the A236 Parallel Video DSP Chip Pinout of the A236 Parallel Video DSP Chip in 208 PQFP Rev. December 22, 1998. download. Note: Negations are shown by "#". Arrows indicate direction of signal flow: -> is input, <- is output, <> is bidirectional Pin No.

Hitachi DSA002712

Contextual Info: HSM198S Silicon Schottky Barrier Diode forVarious Detector, High speed switching ADE-208-090B Z Preliminary Rev. 2 Jun. 1993 Features • • • • Detection efficiency is very good. Small temperature coefficient. HSM198S which is interconnected in series configuration is designed for balanced mixer use.

Contextual Info: HSM198S Silicon Schottky Barrier Diode for Various Detector REJ03G0607-0400 Previous: ADE-208-090C Rev.4.00 Apr 25, 2005 Features • • • • Detection efficiency is very good. Small temperature coefficient. HSM198S which is interconnected in series configuration is designed for balanced mixer use.

Contextual Info: HSM198S Silicon Schottky Barrier Diode forVarious Detector, High speed switching HITACHI ADE-208-090B Z Preliminary Rev. 2 Jun. 1993 Features • Detection efficiency is very good. • Small temperature coefficient. • HSM198S which is interconnected in series configuration is designed for balanced mixer use.

1-208979-4

Contextual Info: 3 4 TH IS DRAW ING COPYRIGHT IS U N P U B L IS H E D . R E LE A S E D FOR P U BLIC A TIO N A LL RIGHTS - 2 D IS T RESERVED. ID R E V IS IO N S 39 D E S C R IP T IO N Y1 R EVISED PER DWN ECO-11-004587 AP V D RK HMR I 1M AR11 r o D D c PLC 208979 3 [.955] 24.59+0.25

HSM198S

Abstract: SC-59A
Contextual Info: HSM198S Silicon Schottky Barrier Diode for Various Detector REJ03G0607-0400 Previous: ADE-208-090C Rev.4.00 Apr 25, 2005 Features • • • • Detection efficiency is very good. Small temperature coefficient. HSM198S which is interconnected in series configuration is designed for balanced mixer use.

hitachi rectifier

Abstract: HSM198S SC-59A Hitachi DSA0044
Contextual Info: HSM198S Silicon Schottky Barrier Diode forVarious Detector, High speed switching ADE-208-090B Z Rev. 2 Jun. 1993 Features • • • • Detection efficiency is very good. Small temperature coefficient. HSM198S which is interconnected in series configuration is designed for balanced mixer use.

Hitachi DSA00773

Abstract: HSM276SR SC-59A
Contextual Info: ADE-208-040D Z HSM276SR Silicon Schottky Barrier Diode for Balanced Mixer Rev.4 Aug. 1994 Features Pin Arrangement • High forward current, Low capacitance. • HSM276SR which is interconnected in series configuration is designed for balanced mixer use • MPAK package is suitable for high density

HSM276S

Abstract: Hitachi DSA00773 SC-59A HSM276SC2
Contextual Info: ADE-208-039D Z HSM276S Silicon Schottky Barrier Diode for Balanced Mixer Rev.4 Aug. 1994 Features Pin Arrangement • High forward current, Low capacitance. • HSM276S which is interconnected in series configuration is designed for balanced mixer use • MPAK package is suitable for high density

Contextual Info: HL8325G GaAlAs Laser Diodes HITACHI ADE-208-582 Z 1st. Edition October 1997 Description The HL8325G is a high - power 0.8 (Am band GaAlAs laser diode with a TQW (triple quantum well) structure. Its internal circuit configuration is suitable for operation on a single positive supply voltage. It is

Hitachi DSA00164

Contextual Info: HL8325G GaAlAs Laser Diodes ADE-208-582 Z 1st. Edition October 1997 Description The HL8325G is a high - power 0.8 µm band GaAlAs laser diode with a TQW (triple quantum well) structure. Its internal circuit configuration is suitable for operation on a single positive supply voltage. It is

Hitachi DSA002789

Contextual Info: HSM276SR Silicon Schottky Barrier Diode for Balanced Mixer ADE-208-040D Z Rev. 4 Features • High forward current, Low capacitance. • HSM276SR which is interconnected in series configuration is designed for balanced mixer use. • MPAK package is suitable for high density surface mounting and high speed assembly.

HL1569AF

Abstract: ld501 Hitachi DSA0047
Contextual Info: HL1569AF 1.55 µm Laser Diode with EA Modulator ADE-208-834A Z 2nd Edition Dec. 2000 Description The HL1569AF is a 1.55 µm InGaAsP distributed-feedback laser diode (DFB-LD) with a multi-quantum well (MQW) structure. An electroabsorption (EA) modulator is integrated with the laser diode. It is

Contextual Info: Document 208-1 SMT Power Inductors - LPO2506 Series With an above-board height of just 1,19 mm, this series is ideal for PC card or other low profile applications. The LPO2506 comes in two styles. One is a standard on-board design that is 1,65 mm high. The second

Ea 1530 A

Abstract: Hitachi DSA0087 HL1569AF
Contextual Info: HL1569AF 1.55 µm Laser Diode with EA Modulator ADE-208-834A Z 2nd Edition Dec. 2000 Description The HL1569AF is a 1.55 µm InGaAsP distributed-feedback laser diode (DFB-LD) with a multi-quantum well (MQW) structure. An electroabsorption (EA) modulator is integrated with the laser diode. It is

Hitachi DSA002748

Contextual Info: HSM276S Silicon Schottky Barrier Diode for Balanced Mixer ADE-208-039E Z Rev 5 July 1998 Features • High forward current, Low capacitance. • HSM276S which is interconnected in series configuration is designed for balanced mixer use. • MPAK package is suitable for high density surface mounting and high speed assembly.

HSM276ASR

Abstract: DSA003644
Contextual Info: HSM276ASR Silicon Schottky Barrier Diode for Balanced Mixer ADE-208-840 Z Rev. 0 Feb. 2000 Features • High forward current, Low capacitance. • HSM276ASR which is interconnected in series configuration is designed for balanced mixer use. • MPAK package is suitable for high density surface mounting and high speed assembly.

HSB276S

Abstract: Hitachi DSA0047 013C2
Contextual Info: HSB276S Silicon Schottky Barrier Diode for Balanced Mixer ADE-208-780 Z Rev 0 Mar. 1999 Features • High forward current, Low capacitance. • HSB276S which is interconnected in series configuration is designed for balanced mixer use. • CMPAK package is suitable for high density surface mounting and high speed assembly.

s19 schottky diode

Abstract: HSM276AS DSA003644
Contextual Info: HSM276AS Silicon Schottky Barrier Diode for Balanced Mixer ADE-208-839 Z Rev. 0 Feb. 2000 Features • High forward current, Low capacitance. • HSM276AS which is interconnected in series configuration is designed for balanced mixer use. • MPAK package is suitable for high density surface mounting and high speed assembly.

electroabsorption

Abstract: ld501 DFB ea HL1553 Hitachi DSA00230 2488-32
Contextual Info: HL1553 1.55 µm Laser Diode with EA Modulator ADE-208-395B Z 3rd Edition Dec. 2000 Description The HL1553 is a 1.55 µm InGaAsP distributed-feedback laser diode (DFB-LD) with a multi-quantum well (MQW) structure. An electroabsorption (EA) modulator is integrated with the laser diode. It is suitable as

HSM276AS

Contextual Info: HSM276AS Silicon Schottky Barrier Diode for Balanced Mixer ADE-208-839 Z Rev 0 Feb. 2000 Features • High forward current, Low capacitance. • HSM276AS which is interconnected in series configuration is designed for balanced mixer use. • MPAK package is suitable for high density surface mounting and high speed assembly.