IS28 Search Results

Contextual Info: ISSP IS28F002BV/BLV 262,144 x 8 SmartVoltage BOOT BLOCK FLASH MEMORY • SmartVoltage Technology — 5V or 12V Program/Erase — 2.7V, 3.3V or 5V Read Operation A u to m a te d B y te W rite an d B lo c k E rase — In d u s try -S ta n d a rd C o m m a n d U ser

Contextual Info: ISSI IS28F020 262,144 x 8 CMOS FLASH MEMORY FEBRUARY 1997 FEATURES • High performance - 50 ns maximum access time • CMOS low power consumption - 30 mA maximum active current - 100 fiA maximum standby current • Compatible with JEDEC-standard byte-wide

Contextual Info: IS28F004BV/BLV 524,288 x 8 SmartVoltage BOOT BLOCK FLASH MEMORY • SmartVoltage Technology — 5V or 12V Program/Erase — 2.7V, 3.3V or 5V Read Operation • High-Performance Read Maximum Access Times — 5V: 60/80/120 ns — 3V: 110/150/180 ns — 2.7V: 120 ns

Contextual Info: IS28LV020 262,144 X 8 CMOS FLASH MEMORY ADVANCE INFORMATION APRIL 1997 FEATURES • High performance - Power supply voltage 3V ± 10% - 90 ns, 120 ns maximum access time • CMOS low power consumption - 30 mA maximum active current - 100 |jA maximum standby current

Contextual Info: ISSI IS28F400BV/BLV 262,144 x 16/524,288 x 8 SmartVoltage BOOT BLOCK FLASH MEMORY SmartVoltage Technology — 5V or 12V Program/Erase — 2.7V, 3.3V or 5V Read Operation High-Performance Read Maximum Access Times — 5V: 60/80/120 ns — 3V: 110/150/180 ns

IS28F010

Abstract: IS28F010-45PL IS28F010-45T IS28F010-45W IS28F010-70W
Contextual Info: ISSI ISSI IS28F010 IS28F010 131,072 x 8 CMOS FLASH MEMORY ® JULY 1997 FEATURES • Flash electrical bulk chip-erase - One second typical chip-erase • Fast-pulse programming algorithm - 10 µs typical byte-program - 2 second chip-program • Command register architecture for microprocessor/microcontroller compatible write

IS28F020

Abstract: IS28F020-50PL IS28F020-50T IS28F020-50W IS28F020-55W
Contextual Info: ISSI IS28F020 ISSI IS28F020 ® 262,144 x 8 CMOS FLASH MEMORY FEBRUARY 1997 FEATURES • Flash electrical bulk chip-erase - One second typical chip-erase • Fast-pulse programming algorithm - 10 µs typical byte-program - 4 second chip-program • Command register architecture for microprocessor/microcontroller compatible write

IS28F010

Contextual Info: ISSI IS28F010 131,072 x 8 CMOS FLASH MEMORY p r e l im in a r y NOVEMBER 1995 FEATURES • High performance - 45 ns maximum access time • CMOS low power consumption - 30 mA maximum active current -100 |iA maximum standby current • Compatible with JEDEC-standard byte-wide

IS2801-1

Abstract: is2801
Contextual Info: ISOCOM COMPONENTS IS2801-1 Compact Range DESCRIPTION The IS2801-1 is an optically coupled isolator consisting of an infrared light emitting diode and an NPN silicon photo transistor. It belongs to Isocom’s Compact range of opto-couplers FEATURES •

Contextual Info: IS28F200BV/BLV 131,072 x 16/262,144 x 8 SmartVoltage BOOT BLOCK FLASH MEMORY ADVANCE INFORMATION NOVEMBER 1996 • SmartVoltage Technology — 5V or 12V Program/Erase — 2.7V, 3.3V o r 5V Read Operation • High-Performance Read Maximum Access Tim es — 5V: 60/80/120 ns

Contextual Info: ISSI IS28F020 262,144 CMOS FLASH MEMORY x 8 p r e l im in a r y SEPTEMBER 1995 FEATURES • High performance - 70 ns maximum access time • CMOS low power consumption - 30 mA maximum active current -100 nA maximum standby current • Compatible with JEDEC-standard byte-wide

Contextual Info: IS28F400BV/BLV 262,144 x 16/524,288 x 8 SmartVoltage BOOT BLOCK FLASH MEMORY ADVANCE INFORMATION NOVEMBER 1996 • SmartVoltage Technology — 5V or 12V Program/Erase — 2.7V, 3.3V or 5V Read Operation • High-Performance Plead Maximum Access Times — 5V: 60/80/120 ns

74HB

Abstract: FL003
Contextual Info: ISSI ISSI IS28F200BV/BLV IS28F200BV/BLV 131,072 x 16/262,144 x 8 SmartVoltage BOOT BLOCK FLASH MEMORY • SmartVoltage Technology — 5V or 12V Program/Erase — 2.7V, 3.3V or 5V Read Operation • High-Performance Read Maximum Access Times — 5V: 60/80/120 ns

IS281-4

Abstract: ltv-217 THP4 LTV-247 IS281
Contextual Info: IS281-4 FEATURES * Current transfer ratio CTR : MIN. 50% at IF = 5mA, VCE = 5V * Isolation voltage between input and output ( Viso = 3KVrms ) * Compact dual-in-line package 4 channels type * Employs double transfer mold technology * Marked as THP4 * ROHS compliance

LTV-217

Abstract: LTV217 LTV-247 IS2801-4 IS280 LTv24 LTV-227 LTV247 isocom date code
Contextual Info: IS2801-4 FEATURES * Current transfer ratio CTR : MIN. 50% at IF = 5mA, VCE = 5V * Isolation voltage between input and output ( Viso = 3KVrms ) * Compact dual-in-line package 4 channels type * Employs double transfer mold technology * ROHS compliance * G : Halogen Free

EE-TP405X

Abstract: is471 IS471F IS455 GI 312 is436 tp405 IS285 IS435 IS437
Contextual Info: 309 - M • it ^ « X U / V 3 V K E VHt E vi h m ax lx) m ax (lx) 80 it H í 230 i' -V— ~f 35 35 35 35 35 - tfc PIC-0101F IS285 IS435 IS436 IS438 IS486 IS437 IS455 IS450 IS456 IS471F IS485 IS487 IS488 E E -TP305X EE-TP405X TPS805 TPS806 TPS807 TPS808 PH502HC

IS28F010

Contextual Info: ISSI IS28F010 131,072 x 8 CMOS FLASH MEMORY JULY1997 FEATURES • High performance - 45 ns maximum access time • CMOS low power consumption - 30 mA maximum active current - 100 |jA maximum standby current • Compatible with JEDEC-standard byte-wide pinouts

DDD0444

Contextual Info: issr IS28F200BV/BLV 131,072 x 16/262,144 x 8 SmartVoltage BOOT BLOCK FLASH MEMORY • SmartVoltage Technology — 5V or 12V Program/Erase — 2.7V, 3.3V or 5V Read Operation ADVANCE INFORMATION NOVEMBER 1996 • Industrial Temperature Operation 40°C to +85°C

hp vanc

Abstract: MAX714
Contextual Info: IS28F004BV/BLV 524,288 x 8 SmartVoltage BOOT BLOCK FLASH MEMORY • SmartVoltage Technology — 5V or 12V Program/Ërase — 2.7V, 3.3V or 5V Read Operation Automated Byte W rite and Block Erase — Industry-Standard Command User Interface — Status Registers

A13-A6

Contextual Info: ISSI IS28F020 262,144 x 8 CMOS FLASH MEMORY FEBRUARY 1997 FEATURES • High performance - 50 ns maximum access time • CMOS low power consumption - 30 mA maximum active current -100 fiA maximum standby current • Compatible with JEDEC-standard byte-wide

IS281GB

Abstract: IS281 OPTO-coupler "photo transistor"
Contextual Info: ISOCOM COMPONENTS IS281GB Compact Range DESCRIPTION The IS281 is an optically coupled isolator consisting of an infrared light emitting diode and an NPN silicon photo transistor. It belongs to Isocom’s Compact range of opto-couplers. It has been specially selected

THP1

Abstract: "photo transistor" IS2801-1 is2801 transistor Power output 100mW
Contextual Info: ISOCOM COMPONENTS IS2801-1 Compact Range DESCRIPTION The IS2801-1 is an optically coupled isolator consisting of an infrared light emitting diode and an NPN silicon photo transistor. It belongs to Isocom’s Compact range of opto-couplers FEATURES •

00hy

Abstract: HOA9 IS28F020 TGD4404
Contextual Info: ISSI IS28F020 262,144 x 8 CMOS FLASH MEMORY p r e l im in a r y SEPTEMBER 1995 FEATURES • High performance - 70 ns maximum access time • CMOS low power consumption - 30 mA maximum active current -100 maximum standby current • Compatible with JEDEC-standard byte-wide

Contextual Info: ISSI ISSI IS28F400BV/BLV IS28F400BV/BLV 262,144 x 16/524,288 x 8 SmartVoltage BOOT BLOCK FLASH MEMORY • SmartVoltage Technology — 5V or 12V Program/Erase — 2.7V, 3.3V or 5V Read Operation • High-Performance Read Maximum Access Times — 5V: 60/80/120 ns