ISIF Search Results

2SC203

Abstract: 2SC2034 I01-A O-450
Contextual Info: & 2SC2034 2SC2034 7 ° U - + Ü / S i N P N E p ita x ia l P la n a r v y = i> N PN h 7 > v ~ K 3 lflf fi;J3 ff i/ T r a n s c e iv e r Power Output i# iS/F eatü res • iSifŒ /V cBO = 120V üi Süfê / Absolute Maximum Ratings T a=25°C Item Symbol Value

STV5726

Contextual Info: / = 7 SGS-THOMSON ISiflDtgMIllLIKgiriSOKilDlgi STV5726 4-HEAD PLAYBACK AND RECORD AMPLIFIER FOR VCR ADVANCE DATA • ONE 5V POWER SUPPLY ■ PLAYBACK/RECORD MODE SELECTION THROUGH A LOGIC INPUT ■ S020 PACKAGE ■ NO ADJUSTMENT FOR LUMINANCE REC­ ORDING

32F81

Abstract: 32F8144 32f8144a 32F814
Contextual Info: SSI 32F8144 ¿iim isifsicms Programmable Electronic Filter A TDK Group/Company January 1996 DESCRIPTION FEATURES This custom integrated circuit incorporates a pulse equalizer of variable equalization and variable band­ width with a transfer function of a 2 zero/7 pole linear

TELTONE

Abstract: M-980-01P
Contextual Info: iCELXDNE Telecsn D isifn Selatiens Other Products “Sustained” Products The following products are not recommended for new designs. Please contact us for updated data sheets and additional information at 1-800-426-3926 or info@teltone.com. M-9220-01P M-957-02

kss japan

Abstract: 60PF MSFC07-111-001M0
Contextual Info: MSFC07-111-001M0 cdmaOne-IF •Features ¡Wide-Band filter for type, cdmaOne. ¡Because it isIFleadless automatic mounting is possible. ¡Excellent phase characteristics. ¡Balance connection type of input and output is available. ■Standard Frequencies ¡85.380MHz, 111.850MHz.

hearing aid schematic

Abstract: OM200 Hearing Aid Circuit Diagram ic for hearing aid
Contextual Info: Panasonic OM200 iSifliSS • at i&JD /&*ji ♦ slU i& /L o w L evel Am plifier C ircuit for Hearing Aid m OM200 l i , ■ * L T fi * • Sffii# • /J'S '-f -,'r — V ■ Features • 3 - s t a g e , d i r e c t c o u p led low le v e l a m p l i fi e r • High p o w e r g ain

T500mA

Abstract: TL782 tl782c 25X2 S30V T0220AB TL782Q 1C-25
Contextual Info: — 248 — TL782 3ülHï-«Œ*5Ë» 2V. 1.5A x • T • * * ; £ » - 2 v , î.sA co ttjt;^ » íb n .& S ftK isifé S -rtjfc L -C l-'S . F/iv ■■■4 0 V T L 7 8 2 Q ( ± - 4 0 T C ^ ib 1 2 5 T C < O fi «SH t;»fP ^ IIIË -t-2 fe*.

2SC3369

Contextual Info: 2SC3369 2SC3369 '>ij 3 > NPN x ¿IrìsT i P o w e r NPN Epitaxial Planar — Amplifier • # iü/Features • 41di t} 'C’&£>0/M iddle power output • iSiflJifT-'^&o/High gain ■ Absolute Maximum Ratings Ta = 25°C 17 U 9 9 • J3L = -y Symbol V CEO

Contextual Info: $ < — K /D iod es RB425D R B 425D /Under Development Silicon Epitaxial Schottky Barrier Diode • * t • Wf ^Tf j i l l l / Di mensi ons U n it: mm) 1) 5 - ^ E - J l / K $ < y o 2) 3) iSifliISJtT'cfc-So • Features ~r-.— 1) Minimold type 2) Small size

transistor KD 503

Abstract: tda7384 kd 503 TI 945 FLEXIWATT25 TDA7384A
Contextual Info: w # SGS-THOMSON T D A 7384A k7 # . ISiflD IS ilLll©ir®®IS!IQ©© 4 x 25W FOUR BRIDGE CHANNELS CAR RADIO AMPLIFIER • HIGH OUTPUT POWER CAPABILITY: 4 x3 5 W max./AQ. EIAJ 4 x25W /4Î2 @ 14.4V, 1 KHz, 10% 4 x21W /4i2 @ 13.2V, 1 KHz, 10% ■ LOW DISTORTION

sk 1061

Abstract: nb 10221 2SA1330 2SC3360
Contextual Info: - j- — S 7 • S / — h NEC h S ilic o n T ra n sisto r '> 1J 2 S P N P i t ^ + ' > 7 ; H ' > iSifa/±±i§ii>i;fc «t y u > 1 3 3 0 h -r *y ^ nm m o • , A \L . m m ) 7 " IJ "/ K iC f f l t L r m & v t » W 2 .8 + 0 .2 o i^ iT E - C f o V ce o : - 2 0 0 V

E2205

Abstract: GaAs fet application note E2183-3 e2183 E2342 E2180
Contextual Info: iSifLkLä. M ic r o 4268 Solar Way Fremont, CA 94538 510 651-6700 FAX (510) 651-2208 Wa v e Te c h n o l o g y GaAs FET APPLICATION NOTE Evaluation of The Effects of Hydrogen on MWT's FETs June 10, 1996 REV A BACKGROUND A number of articles M[2] both in the literature and reported at conferences^3]'[4] have

Contextual Info: HIGH EFFICIENCY RECTIFIERS r§ j f i PLASTIC MATERIAL USED CARRIES UL 94V-0 OPERATING AND STORAGE TEMPERATURE -65 ”C to +150 °C ik k .iSifaifo iliil M a x im u m A ve ra g e R e c tifie d C u rre n t @ H alf-W ave R e s is tiv e Load M axim u m F o rw a rd Peak

EL 817 C108

Abstract: HDMI I2C
Contextual Info: AM3874, AM3872, AM3871 www.ti.com SPRS695A – SEPTEMBER 2011 – REVISED MARCH 2012 AM387x Sitara ARM Processors Check for Samples: AM3874, AM3872, AM3871 1 High-Performance System-on-Chip SoC 1.1 Features • High-Performance Sitara™ ARM® Processors

Contextual Info: MSP430FW42x www.ti.com SLAS383D – OCTOBER 2003 – REVISED JANUARY 2011 MIXED SIGNAL MICROCONTROLLER FEATURES 1 • • • • • • • • • • • • • Low Supply Voltage Range: 1.8 V to 3.6 V Ultra-Low Power Consumption: – Active Mode: 200 µA at 1 MHz, 2.2 V

Contextual Info: TMS320DM365 SPRS457E – MARCH 2009 – REVISED JUNE 2011 www.ti.com TMS320DM365 Digital Media System-on-Chip DMSoC Check for Samples: TMS320DM365 1 TMS320DM365 Digital Media System-on-Chip (DMSoC) 1.1 Features 12 • Highlights – High-Performance Digital Media

mjcp

Abstract: CCIR 656 GIO40
Contextual Info: TMS320DM368 SPRS668C – APRIL 2010 – REVISED JUNE 2011 www.ti.com TMS320DM368 Digital Media System-on-Chip DMSoC Check for Samples: TMS320DM368 1 TMS320DM368 Digital Media System-on-Chip (DMSoC) 1.1 Features 12 • Highlights – High-Performance Digital Media

AN6296

Abstract: AN6296S TI AIH LT 745 S
Contextual Info: AN6296, AN6296S AN6296, AN6296S H i-F i V H S VTR, 8*'J VTRffl 3> Peak-Noise-Reduction System for Hi-Fi VTR s and 8mm VTRs u m w Unit : mm AN6296 e - r m & h A / J x >jy ? ->3 >i c x - t , 3C Hi-Fi VHS VTR tò i. 1/ 8 ; ' VTRW / 4 X ') 7 9 ^ 7 D 7 L , fP

Contextual Info: TMS320DM8148, TMS320DM8147, TMS320DM8146 www.ti.com SPRS647D – MARCH 2011 – REVISED SEPTEMBER 2012 TMS320DM814x DaVinci Video Processors Check for Samples: TMS320DM8148, TMS320DM8147, TMS320DM8146 1 High-Performance System-on-Chip SoC 1.1 Features

HMC334LP4

Abstract: HMC334LP4E
Contextual Info: HMC334LP4 / 334LP4E v00.0407 8 SiGe WIDEBAND DOWNCONVERTER, 0.8 - 2.7 GHz Typical Applications Features The HM334LP4 / HMC334LP4E is ideal for Wireless Infrastructure Applications: Conversion Loss: 0 dB • Basestations & Repeaters Single-Ended LO Drive: -6 dBm

E0C63158

Abstract: E0C63256 E0C63358 S1C63158 IOC41
Contextual Info: MF1085-03 CMOS 4-BIT SINGLE CHIP MICROCOMPUTER S1C63158 Technical Manual S1C63158 Technical Hardware NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice. Seiko Epson does not assume any

Q13MC146

Abstract: 60N01 E0C6001 E0C6002 E0C6003 E0C6004 S1C62920 irf 560 7 SEGMENT DISPLAY 4511
Contextual Info: MF794-03 CMOS 4-BIT SINGLE CHIP MICROCOMPUTER S1C62920 Technical Manual S1C62920 Technical Hardware NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice. Seiko Epson does not assume any

FF224

Abstract: PM4328
Contextual Info: PM4328 TECT3 STANDARD PRODUCT DATASHEET ISSUE 1 HIGH DENSITY T1/E1 FRAMER AND M13 MULTIPLEXER :0 1: 23 AM PMC-2011596 y, da rt on Tu es TECT3 10 Ma y ,2 00 5 04 PM4328 DATASHEET Do wn lo a de d by sa tis h d of ag er HIGH DENSITY T1/E1 FRAMER WITH INTEGRATED M13 MULTIPLEXER

S1C17564

Abstract: hx 630 S1C17 S1C17554 high power thyristor REGULATOR IC 7812 SMD
Contextual Info: CMOS 16-BIT SINGLE CHIP MICROCONTROLLER S1C17554/564 Technical Manual Rev.1.0 NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice. Seiko Epson does not assume any liability